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    • 4. 发明授权
    • Vertical mirror in a silicon photonic circuit
    • 硅光子电路中的垂直镜
    • US08803268B2
    • 2014-08-12
    • US13871083
    • 2013-04-26
    • Intel Corporation
    • John HeckAnsheng LiuMichael T. MorseHaisheng Rong
    • H01L27/14
    • H01L31/02327G02B6/4214
    • A vertical total internal reflection (TIR) mirror and fabrication thereof is made by creating a re-entrant profile using crystallographic silicon etching. Starting with an SOI wafer, a deep silicon etch is used to expose the buried oxide layer, which is then wet-etched (in HF), opening the bottom surface of the Si device layer. This bottom silicon surface is then exposed so that in a crystallographic etch, the resulting shape is a re-entrant trapezoid with facets These facets can be used in conjunction with planar silicon waveguides to reflect the light upwards based on the TIR principle. Alternately, light can be coupled into the silicon waveguides from above the wafer for such purposes as wafer level testing.
    • 垂直全内反射(TIR)镜及其制造是通过使用晶体硅蚀刻创建入门轮廓而制成的。 从SOI晶片开始,使用深硅蚀刻来暴露掩埋氧化物层,然后将其湿法蚀刻(在HF中),打开Si器件层的底表面。 然后将该底部硅表面暴露,使得在晶体刻蚀中,所得到的形状是具有刻面的重入梯形。这些刻面可以与平面硅波导结合使用以基于TIR原理向上反射光。 或者,光可以从晶片上方耦合到硅波导中,用于诸如晶片级测试的目的。