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1. 发明申请

US20160240771A1 Systems and Methods for Implementing Robust Magnetoelectric Junctions 有权
标题翻译：实现鲁棒磁电接点的系统和方法
公开(公告)号：US20160240771A1
公开(公告)日：2016-08-18
申请号：US15044888
申请日：2016-02-16
申请人： Inston Inc.
发明人： Qi Hu
IPC分类号： H01L43/08 , H01L43/10 , H01L43/02
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01L43/10
摘要： Robust magnetoelectric junctions (MEJs) are disclosed. In one embodiment, an MEJ includes: a first fixed layer; a free layer; a seed layer; a cap layer; and a dielectric layer disposed between the first fixed layer and the free layer; where: one of the seed layer and the cap layer is disposed adjacently to a ferromagnetic layer; the first fixed layer is magnetized in a first direction; the free layer can adopt a magnetization direction that is either substantially parallel with or substantially antiparallel with the first direction; when a potential difference is applied across the MEJ, the coercivity of the free layer is reduced for the duration of the application of the potential difference; and at least one of the seed layer and the cap layer includes one of: Molybdenum, Tungsten, Iridium, Bismuth, Rhenium, and Gold.
摘要翻译：公开了鲁棒的电磁连接（MEJ）。在一个实施例中，MEJ包括：第一固定层; 自由层种子层; 盖层; 以及设置在所述第一固定层和所述自由层之间的电介质层; 其中：种子层和盖层中的一个与铁磁层相邻设置; 第一固定层在第一方向被磁化; 自由层可以采用与第一方向基本平行或基本上反平行的磁化方向; 当跨越MEJ施加电位差时，在施加电位差的过程中自由层的矫顽力降低; 并且种子层和盖层中的至少一个包括钼，钨，铱，铋，铼和金中的一种。

2. 发明授权

US09978931B2 Systems and methods for implementing robust magnetoelectric junctions 有权
公开(公告)号：US09978931B2
公开(公告)日：2018-05-22
申请号：US15044888
申请日：2016-02-16
申请人： Inston Inc.
发明人： Qi Hu
IPC分类号： H01L29/82 , H01L43/00 , H01L43/08 , H01L43/10 , G11C11/16
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01L43/10
摘要： Robust magnetoelectric junctions (MEJs) are disclosed. In one embodiment, an MEJ includes: a first fixed layer; a free layer; a seed layer; a cap layer; and a dielectric layer disposed between the first fixed layer and the free layer; where: one of the seed layer and the cap layer is disposed adjacently to a ferromagnetic layer; the first fixed layer is magnetized in a first direction; the free layer can adopt a magnetization direction that is either substantially parallel with or substantially antiparallel with the first direction; when a potential difference is applied across the MEJ, the coercivity of the free layer is reduced for the duration of the application of the potential difference; and at least one of the seed layer and the cap layer includes one of: Molybdenum, Tungsten, Iridium, Bismuth, Rhenium, and Gold.

3. 发明申请

US20160204162A1 Systems and Methods for Implementing Select Devices Constructed from 2D Materials 审中-公开
标题翻译：从2D材料构建的选择器件的实现系统和方法
公开(公告)号：US20160204162A1
公开(公告)日：2016-07-14
申请号：US14995046
申请日：2016-01-13
申请人： Inston, Inc.
发明人： Qi Hu , Kang Wang
IPC分类号： H01L27/24 , H01L29/872 , H01L29/24 , H01L29/786 , H01L29/16 , H01L27/22 , H01L29/861
CPC分类号： H01L27/2436 , H01L27/224 , H01L27/228 , H01L27/2409 , H01L27/2481 , H01L29/1606 , H01L29/24 , H01L29/78603 , H01L29/78648 , H01L29/78681 , H01L29/78696 , H01L29/861 , H01L29/872
摘要： Systems and methods in accordance with embodiments of the invention implement select devices constructed from 2D materials. In one embodiment, a crossbar memory system includes: a first set of connection lines; a second set of connection lines; and an array of memory cells, each memory cell including: a select device; and a memory device; where each memory cell is coupled to a unique combination of: at least one connection line from the first set of connection lines, and at least one connection line from the second set of connection lines; and where at least one select device includes a 2D material.
摘要翻译：根据本发明的实施例的系统和方法实现由2D材料构成的选择装置。在一个实施例中，交叉开关存储器系统包括：第一组连接线; 第二组连接线; 和存储单元阵列，每个存储单元包括：选择装置; 和存储设备; 其中每个存储器单元耦合到以下独特组合：来自所述第一组连接线的至少一条连接线以及来自所述第二组连接线的至少一条连接线; 并且其中至少一个选择装置包括2D材料。

4. 发明申请

US20160197263A1 Systems and Methods for Implementing Efficient Magnetoelectric Junctions 审中-公开
标题翻译：实现高效电磁接头的系统和方法
公开(公告)号：US20160197263A1
公开(公告)日：2016-07-07
申请号：US14681358
申请日：2015-04-08
申请人： Inston, Inc.
发明人： Qi Hu
IPC分类号： H01L43/02 , G11C11/16
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1675 , G11C11/18 , H01L43/08
摘要： Systems and methods in accordance with embodiments of the invention implement efficient magnetoelectric junctions (MEJs). In one embodiment, an MEJ system includes: at least one MEJ, and a first layer including a piezoelectric material disposed proximate at least one MEJ; where the straining of at least some portion of the first layer including a piezoelectric material causes at least some portion of at least one MEJ to experience a stress and a related strain.
摘要翻译：根据本发明的实施例的系统和方法实现有效的电磁连接（MEJ）。在一个实施例中，MEJ系统包括：至少一个MEJ，以及包括靠近至少一个MEJ设置的压电材料的第一层; 其中包括压电材料的第一层的至少一部分的应变导致至少一个MEJ的至少一部分经历应力和相关应变。

5. 发明授权

US10103317B2 Systems and methods for implementing efficient magnetoelectric junctions 有权
公开(公告)号：US10103317B2
公开(公告)日：2018-10-16
申请号：US14681358
申请日：2015-04-08
申请人： Inston, Inc.
发明人： Qi Hu
IPC分类号： H01L43/02 , G11C11/16 , G11C11/18 , H01L43/08
摘要： Systems and methods in accordance with embodiments of the invention implement efficient magnetoelectric junctions (MEJs). In one embodiment, an MEJ system includes: at least one MEJ, and a first layer including a piezoelectric material disposed proximate at least one MEJ; where the straining of at least some portion of the first layer including a piezoelectric material causes at least some portion of at least one MEJ to experience a stress and a related strain.

6. 发明授权

US10217798B2 Systems and methods for implementing select devices constructed from 2D materials 有权
公开(公告)号：US10217798B2
公开(公告)日：2019-02-26
申请号：US14995046
申请日：2016-01-13
申请人： Inston, Inc.
发明人： Qi Hu , Kang L. Wang
IPC分类号： H01L27/24 , H01L29/872 , H01L29/24 , H01L29/786 , H01L29/16 , H01L27/22 , H01L29/861
摘要： Systems and methods in accordance with embodiments of the invention implement select devices constructed from 2D materials. In one embodiment, a crossbar memory system includes: a first set of connection lines; a second set of connection lines; and an array of memory cells, each memory cell including: a select device; and a memory device; where each memory cell is coupled to a unique combination of: at least one connection line from the first set of connection lines, and at least one connection line from the second set of connection lines; and where at least one select device includes a 2D material.

7. 发明申请

US20170033281A1 Systems and Methods for Implementing Magnetoelectric Junctions Including Integrated Magnetization Components 审中-公开
标题翻译：用于实现包含集成磁化部件的磁电接点的系统和方法
公开(公告)号：US20170033281A1
公开(公告)日：2017-02-02
申请号：US15222871
申请日：2016-07-28
申请人： Inston Inc.
发明人： Qi Hu
IPC分类号： H01L43/08 , H01L43/10 , G11C11/16 , H01L43/02
摘要： Systems and methods in accordance with embodiments of the invention implement magnetoelectric junctions that include integrated magnetization components. In one embodiment, a magnetoelectric junction includes: a first fixed layer; a free layer; a dielectric layer disposed between the first fixed layer and the free layer; at least one magnetization layer that is disposed proximate the free layer; where: the first fixed layer is magnetized in a first direction; the free layer can adopt a magnetization direction that is either substantially parallel with or antiparallel with the first direction; the at least one magnetization layer is magnetized in a second direction that is orthogonal to the first direction; the magnetoelectric junction is characterized by a VCMA coefficient of at least approximately 80 fJ/V·m; and the magnetoelectric junction is configured such that a voltage pulse of a proper length in time can cause the free layer to invert its magnetization direction.
摘要翻译：根据本发明的实施例的系统和方法实现包括集成磁化分量的磁电结。在一个实施例中，磁电结包括：第一固定层; 自由层设置在所述第一固定层和所述自由层之间的介电层; 设置在所述自由层附近的至少一个磁化层; 其中：第一固定层在第一方向上被磁化; 自由层可以采用与第一方向基本平行或反平行的磁化方向; 所述至少一个磁化层在与所述第一方向正交的第二方向上被磁化; 磁电结的特征在于至少约80fJ / V·m的VCMA系数; 并且磁电结被配置为使得适当时间长度的电压脉冲可以使自由层反转其磁化方向。

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