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1. 发明申请

US20140179026A1 METHOD FOR GENERATING QUANTIZED ANOMALOUS HALL EFFECT 有权
标题翻译：用于产生定量异常霍尔效应的方法
公开(公告)号：US20140179026A1
公开(公告)日：2014-06-26
申请号：US14055846
申请日：2013-10-16
申请人： Institute of Physics, Chinese Academy of Sciences , Tsinghua University
发明人： QI-KUN XUE , KE HE , XU-CUN MA , XI CHEN , LI-LI WANG , YA-YU WANG , LI LV , CUI-ZU CHANG , XIAO FENG
IPC分类号： H01L43/14 , H01L43/06
CPC分类号： H01L43/14 , H01L43/065
摘要： A method for generating quantum anomalous Hall effect is provided. A topological insulator quantum well film in 3QL to 5QL is formed on an insulating substrate. The topological insulator quantum well film is doped with a first element and a second element to form the magnetically doped topological insulator quantum well film. The doping of the first element and the second element respectively introduce hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1×1013cm−2. One of the first element and the second element magnetically dopes the topological insulator quantum well film. An electric field is applied to the magnetically doped topological insulator quantum well film to decrease the carrier density.
摘要翻译：提供了一种产生量子异常霍尔效应的方法。在绝缘基板上形成3QL至5QL中的拓扑绝缘体量子阱膜。拓扑绝缘体量子阱膜掺杂有第一元素和第二元素以形成磁掺杂拓扑绝缘子量子阱膜。第一元件和第二元件的掺杂在磁性掺杂拓扑绝缘子量子阱膜中分别引入孔型电荷载流子和电子型电荷载流子，以将磁性掺杂拓扑绝缘子量子阱膜的载流子密度降低到或小于等于1×1013cm-2。第一元素和第二元素之一磁性掺杂拓扑绝缘体量子阱膜。将电场施加到磁性掺杂拓扑绝缘体量子阱膜以降低载流子密度。

2. 发明申请

US20140175373A1 TOPOLOGICAL INSULATOR STRUCTURE 有权
标题翻译：拓扑绝缘子结构
公开(公告)号：US20140175373A1
公开(公告)日：2014-06-26
申请号：US14055872
申请日：2013-10-16
申请人： INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES , TSINGHUA UNIVERSITY
发明人： QI-KUN XUE , KE HE , XU-CUN MA , XI CHEN , LI-LI WANG , CUI-ZU CHANG , XIAO FENG , YAO-YI LI , JIN-FENG JIA
IPC分类号： H01L43/06
CPC分类号： H01L43/06 , H01L43/10 , H01L43/14
摘要： A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3. 0
摘要翻译：拓扑绝缘体结构包括位于绝缘衬底上的绝缘衬底和掺有磁性的TI量子阱膜。掺杂的TI量子阱膜的材料由Cry（BixSb1-x）2-yTe3的化学式表示。 0

3. 发明申请

US20150380130A1 METHOD FOR MAKING HIGH-TEMPERATURE SUPERCONDUCTING FILM 有权
标题翻译：制备高温超导膜的方法
公开(公告)号：US20150380130A1
公开(公告)日：2015-12-31
申请号：US14316823
申请日：2014-06-27
申请人： Tsinghua University , Institute of Physics, Chinese Academy of Sciences
发明人： QI-KUN XUE , XU-CUN MA , LI-LI WANG , XI CHEN , JIN-FENG JIA , KE HE , SHUAI-HUA JI , WEN-HAO ZHANG , QING-YAN WANG , ZHI LI
IPC分类号： H01B12/06 , H01B13/00
CPC分类号： H01L39/2403 , H01B12/06 , H01B13/0036 , H01L39/12
摘要： A method for making a high-temperature superconducting film includes loading a SrTiO3 substrate in an ultra-high vacuum system. A single crystalline FeSe layer is grown on a surface of the SrTiO3 substrate by molecular beam epitaxy. A protective layer with a layered crystal structure is grown by molecular beam epitaxy and covering the single crystalline FeSe layer.
摘要翻译：制造高温超导膜的方法包括在超高真空系统中加载SrTiO 3基板。通过分子束外延在SrTiO3衬底的表面上生长单晶FeSe层。具有层状晶体结构的保护层通过分子束外延生长并覆盖单晶FeSe层。

4. 发明申请

US20140175382A1 ELECTRICAL DEVICE 有权
标题翻译：电气设备
公开(公告)号：US20140175382A1
公开(公告)日：2014-06-26
申请号：US14055860
申请日：2013-10-16
申请人： Institute of Physics, Chinese Academy of Sciences , Tsinghua University
发明人： QI-KUN XUE , KE HE , XU-CUN MA , XI CHEN , LI-LI WANG , YA-YU WANG , Li Lv , CUI-ZU CHANG , XIAO FENG
IPC分类号： H01L43/10
CPC分类号： H01L43/10 , H01B17/005 , H01L43/06 , H01L43/14 , Y10T428/265
摘要： An electrical device includes an insulating substrate and a magnetically doped TI quantum well film. The insulating substrate includes a first surface and a second surface. The magnetically doped topological insulator quantum well film is located on the first surface of the insulating substrate. A material of the magnetically doped topological insulator quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3, wherein 0
摘要翻译：电气装置包括绝缘衬底和掺杂有磁阻的TI量子阱膜。绝缘基板包括第一表面和第二表面。磁性掺杂拓扑绝缘体量子阱膜位于绝缘基板的第一表面上。磁性掺杂拓扑绝缘体量子阱膜的材料由Cry（BixSb1-x）2-yTe3的化学式表示，其中0

5. 发明申请

US20150380129A1 HIGH-TEMPERATURE SUPERCONDUCTING FILM 有权
标题翻译：高温超导膜
公开(公告)号：US20150380129A1
公开(公告)日：2015-12-31
申请号：US14316822
申请日：2014-06-27
申请人： Tsinghua University , Institute of Physics, Chinese Academy of Sciences
发明人： QI-KUN XUE , XU-CUN MA , LI-LI WANG , XI CHEN , JIN-FENG JIA , KE HE , SHUAI-HUA JI , WEN-HAO ZHANG , QING-YAN WANG , ZHI LI
IPC分类号： H01B12/06 , H01L39/12 , H01B1/02
CPC分类号： H01L39/12 , H01B12/06 , H01B13/0036 , H01L39/14
摘要： A high-temperature superconducting film includes a SrTiO3 substrate, a single crystalline FeSe layer, and a protective layer with a layered crystal structure. The single crystalline FeSe layer is sandwiched between the SrTiO3 substrate and the protective layer via a layer-by-layer mode. An onset temperature of superconducting transition of the high-temperature superconducting film is greater than or equal to 54 K, and a critical current density of the high-temperature superconducting film is about 106 A/cm2 at 12 K.
摘要翻译：高温超导膜包括SrTiO 3基板，单晶FeSe层和具有层状晶体结构的保护层。单晶FeSe层通过逐层模式夹在SrTiO3衬底和保护层之间。高温超导膜的超导转变的起始温度大于或等于54K，高温超导膜的临界电流密度在12K时约为106A / cm2。

6. 发明申请

US20140178674A1 TOPOLOGICAL INSULATOR STRUCTURE 有权
标题翻译：拓扑绝缘子结构
公开(公告)号：US20140178674A1
公开(公告)日：2014-06-26
申请号：US14055863
申请日：2013-10-16
申请人： Institute of Physics, Chinese Academy of Sciences , Tsinghua University
发明人： QI-KUN XUE , KE HE , XU-CUN MA , XI CHEN , LI-LI WANG , CUI-ZU CHANG , XIAO FENG , YAO-YI LI , JIN-FENG JIA
IPC分类号： H01B17/00
CPC分类号： H01L43/10 , H01B17/005 , H01L43/06 , H01L43/14 , Y10T428/265
摘要： A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3. 0.05
摘要翻译：拓扑绝缘体结构包括位于绝缘衬底上的绝缘衬底和掺有磁性的TI量子阱膜。掺杂量子阱膜的材料由Cry（BixSb1-x）2-yTe3的化学式表示。 0.05

7. 发明申请

US20140174343A1 METHOD FOR MAKING TOPOLOGICAL INSULATOR STRUCTURE 有权
标题翻译：制造拓扑绝缘体结构的方法
公开(公告)号：US20140174343A1
公开(公告)日：2014-06-26
申请号：US14055853
申请日：2013-10-16
申请人： Institute of Physics, Chinese Academy of Sciences , Tsinghua University
发明人： QI-KUN XUE , KE HE , XU-CUN MA , XI CHEN , LI-LI WANG , CUI-ZU CHANG , XIAO FENG , YAO-YI LI , JIN-FENG JIA
IPC分类号： C30B25/18
CPC分类号： C30B25/186 , C30B23/002 , C30B23/025 , H01L43/14
摘要： A method for forming a topological insulator structure is provided. A strontium titanate substrate having a surface (111) is used. The surface (111) of the strontium titanate substrate is cleaned by heat-treating the strontium titanate substrate in the molecular beam epitaxy chamber. The strontium titanate substrate is heated and Bi beam, Sb beam, Cr beam, and Te beam are formed in the molecular beam epitaxy chamber in a controlled ratio achieved by controlling flow rates of the Bi beam, Sb beam, Cr beam, and Te beam. The magnetically doped topological insulator quantum well film is formed on the surface (111) of the strontium titanate substrate. The amount of the hole type charge carriers introduced by the doping with Cr is substantially equal to the amount of the electron type charge carriers introduced by the doping with Bi.
摘要翻译：提供一种用于形成拓扑绝缘体结构的方法。使用具有表面（111）的钛酸锶基材。钛酸锶基体的表面（111）通过对分子束外延室中的钛酸锶基材进行热处理来清洗。加热钛酸锶基片，并通过控制Bi光束，Sb光束，Cr光束和Te光束的流速以控制的比例在分子束外延室中形成Bi光束，Sb光束，Cr光束和Te光束。。磁性掺杂拓扑绝缘体量子阱膜形成在钛酸锶基体的表面（111）上。通过掺杂Cr引入的空穴型电荷载流子的量基本上等于通过掺杂Bi引入的电子型电荷载流子的量。

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