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1. 发明授权

US08519495B2 Single line MRAM 失效
标题翻译：单线MRAM
公开(公告)号：US08519495B2
公开(公告)日：2013-08-27
申请号：US12372025
申请日：2009-02-17
申请人： Insik Jin , Hongyue Liu , Yong Lu , Xiaobin Wang
发明人： Insik Jin , Hongyue Liu , Yong Lu , Xiaobin Wang
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A magnetic memory device includes a first electrode separated from a second electrode by a magnetic tunnel junction. The first electrode provides a write current path along a length of the first electrode. The magnetic tunnel junction includes a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation. The free magnetic layer is spaced from the first electrode a distance of less than 10 nanometers. A current passing along the write current path generates a magnetic field. The magnetic field switches the free magnetic layer magnetization orientation between a high resistance state magnetization orientation and a low resistance state magnetization orientation.
摘要翻译：磁存储器件包括通过磁性隧道结从第二电极分离的第一电极。第一电极沿着第一电极的长度提供写入电流路径。磁性隧道结包括具有可在高电阻状态磁化取向和低电阻状态磁化取向之间切换的磁化取向的自由磁性层。自由磁性层与第一电极间隔小于10纳米的距离。沿着写入电流路径的电流产生磁场。磁场在高电阻状态磁化取向和低电阻状态磁化取向之间切换自由磁层磁化取向。

2. 发明申请

US20100207219A1 SINGLE LINE MRAM 失效
标题翻译：单线MRAM
公开(公告)号：US20100207219A1
公开(公告)日：2010-08-19
申请号：US12372025
申请日：2009-02-17
申请人： Insik Jin , Hongyue Liu , Yong Lu , Xiaobin Wang
发明人： Insik Jin , Hongyue Liu , Yong Lu , Xiaobin Wang
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A magnetic memory device includes a first electrode separated from a second electrode by a magnetic tunnel junction. The first electrode provides a write current path along a length of the first electrode. The magnetic tunnel junction includes a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation. The free magnetic layer is spaced from the first electrode a distance of less than 10 nanometers. A current passing along the write current path generates a magnetic field. The magnetic field switches the free magnetic layer magnetization orientation between a high resistance state magnetization orientation and a low resistance state magnetization orientation.
摘要翻译：磁存储器件包括通过磁性隧道结从第二电极分离的第一电极。第一电极沿着第一电极的长度提供写入电流路径。磁性隧道结包括具有可在高电阻状态磁化取向和低电阻状态磁化取向之间切换的磁化取向的自由磁性层。自由磁性层与第一电极间隔小于10纳米的距离。沿着写入电流路径的电流产生磁场。磁场在高电阻状态磁化取向和低电阻状态磁化取向之间切换自由磁层磁化取向。

3. 发明授权

US08400825B2 Magnetic field assisted stram cells 失效
标题翻译：磁场辅助电极
公开(公告)号：US08400825B2
公开(公告)日：2013-03-19
申请号：US13491891
申请日：2012-06-08
申请人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
发明人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/1659
摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.
摘要翻译：具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或与磁化方向成一定角度。

4. 发明申请

US20120250405A1 MAGNETIC FIELD ASSISTED STRAM CELLS 失效
标题翻译：磁场辅助细胞
公开(公告)号：US20120250405A1
公开(公告)日：2012-10-04
申请号：US13491891
申请日：2012-06-08
申请人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
发明人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
IPC分类号： G11C11/16 , G11C11/14
CPC分类号： G11C11/1675 , G11C11/1659
摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.
摘要翻译：具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或与磁化方向成一定角度。

5. 发明申请

US20100034008A1 MAGNETIC FIELD ASSISTED STRAM CELLS 有权
标题翻译：磁场辅助STRAM细胞
公开(公告)号：US20100034008A1
公开(公告)日：2010-02-11
申请号：US12199126
申请日：2008-08-27
申请人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
发明人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
IPC分类号： G11C11/22
CPC分类号： G11C11/1675 , G11C11/1659
摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.
摘要翻译：具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或与磁化方向成一定角度。

6. 发明授权

US08223532B2 Magnetic field assisted STRAM cells 有权
标题翻译：磁场辅助STRAM细胞
公开(公告)号：US08223532B2
公开(公告)日：2012-07-17
申请号：US12199126
申请日：2008-08-27
申请人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
发明人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/1659
摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.
摘要翻译：具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或与磁化方向成一定角度。

7. 发明授权

US08508973B2 Method of switching out-of-plane magnetic tunnel junction cells 有权
标题翻译：切换平面外的磁隧道结电池的方法
公开(公告)号：US08508973B2
公开(公告)日：2013-08-13
申请号：US12946900
申请日：2010-11-16
申请人： Insik Jin , Xiaobin Wang , Yong Lu , Haiwen Xi
发明人： Insik Jin , Xiaobin Wang , Yong Lu , Haiwen Xi
IPC分类号： G11C11/22
CPC分类号： G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01F10/3259 , H01F10/3286 , H01L43/08
摘要： A method of switching the magnetization orientation of a ferromagnetic free layer of an out-of-plane magnetic tunnel junction cell, the method including: passing an AC switching current through the out-of-plane magnetic tunnel junction cell, wherein the AC switching current switches the magnetization orientation of the ferromagnetic free layer.
摘要翻译：一种切换面外磁性隧道结电池的铁磁自由层的磁化取向的方法，该方法包括：使交流开关电流通过面外磁性隧道结电池，其中交流开关电流切换铁磁自由层的磁化方向。

8. 发明申请

US20120120708A1 METHOD OF SWITCHING OUT-OF-PLANE MAGNETIC TUNNEL JUNCTION CELLS 有权
标题翻译：切换平面外磁场隧道连接电极的方法
公开(公告)号：US20120120708A1
公开(公告)日：2012-05-17
申请号：US12946900
申请日：2010-11-16
申请人： Insik Jin , Xiaobin Wang , Yong Lu , Haiwen Xi
发明人： Insik Jin , Xiaobin Wang , Yong Lu , Haiwen Xi
IPC分类号： G11C11/22 , G11C11/15
CPC分类号： G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01F10/3259 , H01F10/3286 , H01L43/08
摘要： A method of switching the magnetization orientation of a ferromagnetic free layer of an out-of-plane magnetic tunnel junction cell, the method including: passing an AC switching current through the out-of-plane magnetic tunnel junction cell, wherein the AC switching current switches the magnetization orientation of the ferromagnetic free layer.
摘要翻译：一种切换面外磁性隧道结电池的铁磁自由层的磁化取向的方法，该方法包括：使交流开关电流通过面外磁性隧道结电池，其中交流开关电流切换铁磁自由层的磁化方向。

9. 发明申请

US20100067281A1 VARIABLE WRITE AND READ METHODS FOR RESISTIVE RANDOM ACCESS MEMORY 有权
公开(公告)号：US20100067281A1
公开(公告)日：2010-03-18
申请号：US12210526
申请日：2008-09-15
申请人： Haiwen Xi , Hongyue Liu , Xiaobin Wang , Yong Lu , Yiran Chen , Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Hai Li
发明人： Haiwen Xi , Hongyue Liu , Xiaobin Wang , Yong Lu , Yiran Chen , Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Hai Li
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C11/16 , G11C13/0007 , G11C13/004 , G11C13/0064 , G11C13/0069 , G11C2013/0057
摘要： Variable write and read methods for resistance random access memory (RRAM) are disclosed. The methods include initializing a write sequence and verifying the resistance state of the RRAM cell. If a write pulse is needed, then two or more write pulses are applied through the RRAM cell to write the desired data state to the RRAM cell. Each subsequent write pulse has substantially the same or greater write pulse duration. Subsequent write pulses are applied to the RRAM cell until the RRAM cell is in the desired data state or until a predetermined number of write pulses have been applied to the RRAM cell. A read method is also disclosed where subsequent read pulses are applied through the RRAM cell until the read is successful or until a predetermined number of read pulses have been applied to the RRAM cell.

10. 发明授权

US08289759B2 Non-volatile memory cell with precessional switching 有权
标题翻译：具有进动切换的非易失性存储单元
公开(公告)号：US08289759B2
公开(公告)日：2012-10-16
申请号：US13091372
申请日：2011-04-21
申请人： Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar V. Dimitrov , Wei Tian , Brian S. Lee
发明人： Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar V. Dimitrov , Wei Tian , Brian S. Lee
IPC分类号： G11C11/00
CPC分类号： H01F10/329 , B82Y25/00 , G06F7/588 , G11C11/161 , G11C11/1675 , G11C11/1677 , G11C11/1693 , H01F10/3254 , H01F10/3286
摘要： A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.
摘要翻译：一种将数据写入非易失性存储单元的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）存储单元。在一些实施例中，通过将一系列不确定的写入脉冲施加到磁性隧道结构中来将所选择的电阻状态写入到所选择的电阻状态。

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