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1. 发明授权

US11469317B2 RC IGBT 有权
公开(公告)号：US11469317B2
公开(公告)日：2022-10-11
申请号：US17203194
申请日：2021-03-16
申请人： Infineon Technologies Austria AG
发明人： Frank Dieter Pfirsch , Erich Griebl , Viktoryia Lapidus , Anton Mauder , Christian Philipp Sandow , Antonio Vellei
IPC分类号： H01L29/739 , H01L29/66 , H01L29/06 , G06F30/398
摘要： An RC IGBT includes, in an active region, an IGBT section and at least three diode sections. The arrangement of the diode sections obeys a design rule.

2. 发明授权

US10600862B2 High voltage termination structure of a power semiconductor device 有权
公开(公告)号：US10600862B2
公开(公告)日：2020-03-24
申请号：US15791943
申请日：2017-10-24
申请人： Infineon Technologies Austria AG
发明人： Erich Griebl , Frank Wolter , Andreas Moser , Manfred Pfaffenlehner
IPC分类号： H01L29/06 , H01L29/78 , H01L29/40 , H01L21/761 , H01L21/765 , H01L29/739 , H01L29/417 , H01L29/861
摘要： A power semiconductor device includes a semiconductor body coupled to first and second load terminals and including a drift region with dopants of a first conductivity type. An active region has at least one power cell extending at least partially into the semiconductor body, is electrically connected with the first load terminal and includes a part of the drift region. Each power cell includes a section of the drift region and is configured to conduct a load current between the terminals and to block a blocking voltage applied between the terminals. A chip edge laterally terminates the semiconductor body. A non-active termination structure arranged in between the chip edge and active region includes an ohmic layer. The ohmic layer is arranged above a surface of the semiconductor body, forms an ohmic connection between electrical potentials of the first and second load terminals, and is laterally structured along the ohmic connection.

3. 发明申请

US20180083132A1 Semiconductor Device 审中-公开
公开(公告)号：US20180083132A1
公开(公告)日：2018-03-22
申请号：US15706263
申请日：2017-09-15
申请人： Infineon Technologies Austria AG
发明人： Matteo Dainese , Erich Griebl
IPC分类号： H01L29/739 , H01L29/10 , H01L29/423 , H01L29/06 , H01L29/08 , H01L29/417 , H01L29/36 , H01L29/66 , H01L21/308 , H01L21/266 , H01L21/265 , H01L21/027
CPC分类号： H01L29/7397 , H01L21/0273 , H01L21/2255 , H01L21/26513 , H01L21/266 , H01L21/3086 , H01L29/0615 , H01L29/0684 , H01L29/0696 , H01L29/0804 , H01L29/0821 , H01L29/1004 , H01L29/1095 , H01L29/36 , H01L29/407 , H01L29/41708 , H01L29/4236 , H01L29/45 , H01L29/66348 , H01L29/7396
摘要： A semiconductor device includes a semiconductor body including a base region and two semiconductor mesas separated from each other by an insulated trench gate structure extending from a first side into the base region, and including a dielectric layer separating a gate electrode from the semiconductor body. Each semiconductor mesa includes, in a cross-section perpendicular to the first side, a body region forming a pn-junction with the base region, a latch-up-safety region of the same conductivity type as the body region arranged between the body region and the first side, and having a higher doping concentration than the body region, and an emitter region between the dielectric layer and the latch-up-safety region and forming a pn-junction with the body region. At least one semiconductor mesa includes an emitter contact arranged between the emitter region and the latch-up-safety region and forming with the latch-up-safety and emitter regions an Ohmic contact.

4. 发明申请

US20160111415A1 Insulated Gate Bipolar Transistor Comprising Negative Temperature Coefficient Thermistor 有权
标题翻译：绝缘栅双极晶体管，包括负温度系数热敏电阻
公开(公告)号：US20160111415A1
公开(公告)日：2016-04-21
申请号：US14880924
申请日：2015-10-12
申请人： Infineon Technologies Austria AG
发明人： Thomas Basler , Erich Griebl , Joachim Mahler , Daniel Pedone , Wolfgang Scholz , Philipp Seng , Peter Tuerkes , Stephan Voss
IPC分类号： H01L27/02 , H01L29/08 , H01L29/10 , H01L29/739 , H01L21/306 , H01L49/02 , H01L29/66 , H01L29/417 , H01L27/06
CPC分类号： H01L27/0288 , H01L27/0629 , H01L29/0834 , H01L29/66348 , H01L29/7395 , H01L29/7397
摘要： An embodiment of an IGBT comprises an emitter terminal at a first surface of a semiconductor body. The IGBT further comprises a collector terminal at a second surface of the semiconductor body. A first zone of a first conductivity type is in the semiconductor body between the first and second surfaces. A collector injection structure adjoins the second surface, the collector injection structure being of a second conductivity type and comprising a first part and a second part at a first lateral distance from each other. The IGBT further comprises a negative temperature coefficient thermistor adjoining the first zone in an area between the first and second parts.
摘要翻译： IGBT的实施例包括在半导体本体的第一表面处的发射极端子。 IGBT还包括在半导体本体的第二表面处的集电极端子。第一导电类型的第一区域位于第一和第二表面之间的半导体本体中。集电体注入结构毗邻第二表面，集电体注入结构是第二导电类型，并且包括彼此处于第一横向距离的第一部分和第二部分。 IGBT还包括在第一和第二部分之间的区域中与第一区相邻的负温度系数热敏电阻。

5. 发明申请

US20210296479A1 RC IGBT 有权
公开(公告)号：US20210296479A1
公开(公告)日：2021-09-23
申请号：US17203194
申请日：2021-03-16
申请人： Infineon Technologies Austria AG
发明人： Frank Dieter Pfirsch , Erich Griebl , Viktoryia Lapidus , Anton Mauder , Christian Philipp Sandow , Antonio Vellei
IPC分类号： H01L29/739 , G06F30/398 , H01L29/06 , H01L29/66
摘要： An RC IGBT includes, in an active region, an IGBT section and at least three diode sections. The arrangement of the diode sections obeys a design rule.

6. 发明申请

US20190273155A1 Power Semiconductor Device Having a Cross-Trench Arrangement 审中-公开
公开(公告)号：US20190273155A1
公开(公告)日：2019-09-05
申请号：US16409454
申请日：2019-05-10
申请人： Infineon Technologies Austria AG , Infineon Technologies Dresden GmbH & Co. KG
发明人： Matteo Dainese , Alexander Philippou , Markus Bina , Ingo Dirnstorfer , Erich Griebl , Christian Jaeger , Johannes Georg Laven , Caspar Leendertz , Frank Dieter Pfirsch
IPC分类号： H01L29/739 , H01L29/06 , H01L29/423 , H01L29/40 , H01L29/66 , H01L29/10
摘要： A power semiconductor device includes an active region surrounded by an inactive termination region each formed by part of a semiconductor body. The active region conducts load current between first and second load terminals. At least one power cell has trenches extending into the semiconductor body adjacent to each other along a first lateral direction and having a stripe configuration that extends along a second lateral direction into the active region. The trenches spatially confine a plurality of mesas each having at least one first type mesa electrically connected to the first load terminal and configured to conduct at least a part of the load current, and at least one second type mesa configured to not conduct the load current. A decoupling structure separates at least one of the second type mesas into a first section in the active region and a second section in the termination region.

7. 发明授权

US09825023B2 Insulated gate bipolar transistor comprising negative temperature coefficient thermistor 有权
公开(公告)号：US09825023B2
公开(公告)日：2017-11-21
申请号：US14880924
申请日：2015-10-12
申请人： Infineon Technologies Austria AG
发明人： Thomas Basler , Erich Griebl , Joachim Mahler , Daniel Pedone , Wolfgang Scholz , Philipp Seng , Peter Tuerkes , Stephan Voss
IPC分类号： H01L29/66 , H01L27/02 , H01L27/06 , H01L29/739 , H01L29/08
CPC分类号： H01L27/0288 , H01L27/0629 , H01L29/0834 , H01L29/66348 , H01L29/7395 , H01L29/7397
摘要： An embodiment of an IGBT comprises an emitter terminal at a first surface of a semiconductor body. The IGBT further comprises a collector terminal at a second surface of the semiconductor body. A first zone of a first conductivity type is in the semiconductor body between the first and second surfaces. A collector injection structure adjoins the second surface, the collector injection structure being of a second conductivity type and comprising a first part and a second part at a first lateral distance from each other. The IGBT further comprises a negative temperature coefficient thermistor adjoining the first zone in an area between the first and second parts.

8. 发明授权

US10177248B2 Semiconductor device 有权
公开(公告)号：US10177248B2
公开(公告)日：2019-01-08
申请号：US15706263
申请日：2017-09-15
申请人： Infineon Technologies Austria AG
发明人： Matteo Dainese , Erich Griebl
IPC分类号： H01L29/74 , H01L31/111 , H01L29/739 , H01L21/027 , H01L21/265 , H01L21/266 , H01L21/308 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/36 , H01L29/417 , H01L29/423 , H01L29/66
摘要： A semiconductor device includes a semiconductor body including a base region and two semiconductor mesas separated from each other by an insulated trench gate structure extending from a first side into the base region, and including a dielectric layer separating a gate electrode from the semiconductor body. Each semiconductor mesa includes, in a cross-section perpendicular to the first side, a body region forming a pn-junction with the base region, a latch-up-safety region of the same conductivity type as the body region arranged between the body region and the first side, and having a higher doping concentration than the body region, and an emitter region between the dielectric layer and the latch-up-safety region and forming a pn-junction with the body region. At least one semiconductor mesa includes an emitter contact arranged between the emitter region and the latch-up-safety region and forming with the latch-up-safety and emitter regions an Ohmic contact.

9. 发明申请

US20180114830A1 High Voltage Termination Structure of a Power Semiconductor Device 审中-公开
公开(公告)号：US20180114830A1
公开(公告)日：2018-04-26
申请号：US15791943
申请日：2017-10-24
申请人： Infineon Technologies Austria AG
发明人： Erich Griebl , Frank Wolter , Andreas Moser , Manfred Pfaffenlehner
IPC分类号： H01L29/06 , H01L29/40 , H01L21/765 , H01L21/761
CPC分类号： H01L29/0623 , H01L21/761 , H01L21/765 , H01L29/0615 , H01L29/0638 , H01L29/402 , H01L29/405 , H01L29/41766 , H01L29/7395 , H01L29/7397 , H01L29/7811 , H01L29/7813 , H01L29/861
摘要： A power semiconductor device includes a semiconductor body coupled to first and second load terminals and including a drift region with dopants of a first conductivity type. An active region has at least one power cell extending at least partially into the semiconductor body, is electrically connected with the first load terminal and includes a part of the drift region. Each power cell includes a section of the drift region and is configured to conduct a load current between the terminals and to block a blocking voltage applied between the terminals. A chip edge laterally terminates the semiconductor body. A non-active termination structure arranged in between the chip edge and active region includes an ohmic layer. The ohmic layer is arranged above a surface of the semiconductor body, forms an ohmic connection between electrical potentials of the first and second load terminals, and is laterally structured along the ohmic connection.

10. 发明授权

US09111989B2 Insulated gate bipolar transistor including emitter short regions 有权
标题翻译：绝缘栅双极晶体管包括发射极短区域
公开(公告)号：US09111989B2
公开(公告)日：2015-08-18
申请号：US13850798
申请日：2013-03-26
申请人： Infineon Technologies Austria AG
发明人： Stephan Voss , Erich Griebl , Alexander Breymesser
IPC分类号： H01L29/739 , H01L29/06 , H01L29/74 , H01L29/08 , H01L29/10 , H01L29/70
CPC分类号： H01L29/7397 , H01L29/0611 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/70 , H01L29/7416 , H01L2924/13028
摘要： A semiconductor device includes an IGBT having a semiconductor body including a transistor cell array in a first area. A junction termination structure is in a second area surrounding the transistor cell array at a first side of the semiconductor body. An emitter region of a first conductivity type is at a second side of the semiconductor body opposite the first side. The device further includes a diode. One of the diode anode and cathode includes the body region. The other one of the anode and the cathode includes a plurality of distinct first emitter short regions of a second conductivity type at the second side facing the transistor cell array, and at least one second emitter short region of the second conductivity type at the second side facing the junction termination structure. The at least one second emitter short region is distinct from the first emitter short regions.
摘要翻译：半导体器件包括在第一区域中具有包括晶体管单元阵列的半导体本体的IGBT。接合端接结构位于半导体本体的第一侧周围晶体管单元阵列的第二区域中。第一导电类型的发射极区域位于与第一侧相对的半导体本体的第二侧。该器件还包括二极管。二极管阳极和阴极中的一个包括体区。阳极和阴极中的另一个包括在面向晶体管单元阵列的第二面处具有第二导电类型的多个不同的第一发射极短区域，以及在第二侧处具有第二导电类型的至少一个第二发射极短区域面向连接端接结构。所述至少一个第二发射极短区域与第一发射极短区域不同。

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