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1. 发明授权

US09437593B2 Silicided semiconductor structure and method of forming the same 有权
标题翻译：硅化半导体结构及其形成方法
公开(公告)号：US09437593B2
公开(公告)日：2016-09-06
申请号：US14488020
申请日：2014-09-16
申请人： Infineon Technologies AG
发明人： Jiang Yan , Henning Haffner , Frank Huebinger , Sun-Oo Kim , Richard Lindsay , Klaus Schruefer
IPC分类号： H01L21/70 , H01L27/06 , H01L23/525 , H01L29/06 , H01L21/28 , H01L29/49
CPC分类号： H01L27/0617 , H01L21/28088 , H01L23/5256 , H01L29/0653 , H01L29/4958 , H01L29/4966 , H01L2924/0002 , H01L2924/00
摘要： A preferred embodiment includes a method of manufacturing a fuse element that includes forming a polysilicon layer over a semiconductor structure, doping the polysilicon layer with carbon or nitrogen, depositing a metal over the polysilicon layer; and annealing the metal and polysilicon layer to form a silicide in an upper portion of the polysilicon layer.
摘要翻译：优选实施例包括制造熔丝元件的方法，该方法包括在半导体结构上形成多晶硅层，用碳或氮掺杂多晶硅层，在多晶硅层上沉积金属; 以及退火所述金属和多晶硅层以在所述多晶硅层的上部形成硅化物。

2. 发明申请

US20160126189A1 Programmable Devices and Methods of Manufacture Thereof 审中-公开
公开(公告)号：US20160126189A1
公开(公告)日：2016-05-05
申请号：US14991376
申请日：2016-01-08
申请人： Infineon Technologies AG
发明人： Frank Huebinger
IPC分类号： H01L23/525 , H01L21/762 , H01L27/11 , H01L23/532
CPC分类号： H01L23/5256 , H01L21/76852 , H01L21/76877 , H01L21/76889 , H01L21/76897 , H01L23/5283 , H01L23/53214 , H01L23/53228 , H01L23/53257 , H01L23/53266 , H01L23/53271 , H01L27/11 , H01L2924/0002 , H01L2924/00
摘要： Programmable devices, methods of manufacture thereof, and methods of programming devices are disclosed. In one embodiment, a programmable device includes a link and at least one first contact coupled to a first end of the link. The at least one first contact is adjacent a portion of a top surface of the link and at least one sidewall of the link. The programmable device includes at least one second contact coupled to a second end of the link. The at least one second contact is adjacent a portion of the top surface of the link and at least one sidewall of the link.

3. 发明授权

US09000597B2 Dummy structures and methods 有权
标题翻译：虚拟结构和方法
公开(公告)号：US09000597B2
公开(公告)日：2015-04-07
申请号：US13959485
申请日：2013-08-05
申请人： Infineon Technologies AG
发明人： Frank Huebinger , Steffen Rothenhaeusser , Kerstin Kaemmer
IPC分类号： H01L29/41 , H01L21/28 , H01L27/02 , H01L21/283 , H01L27/088 , H01L29/66
CPC分类号： H01L21/28008 , H01L21/283 , H01L27/0207 , H01L27/088 , H01L29/6659
摘要： A semiconductor device and a method of making a semiconductor device are disclosed. The method of manufacturing a semiconductor device comprises forming a material layer on a substrate, patterning a first semi-global region with a first main pattern and patterning a second semi-global region with a second main pattern, wherein the first main pattern is different than the second main pattern. The method further comprises introducing a first dummy pattern in the first semi-global region so that a first sidewall area surface density of the first main pattern and the first dummy pattern in the first semi-global region and a second sidewall area surface density of the second main pattern in the second semi-global region are substantially a same density.
摘要翻译：公开了一种半导体器件和制造半导体器件的方法。制造半导体器件的方法包括在衬底上形成材料层，用第一主图案构图第一半全局区域，并用第二主图案构图第二半全局区域，其中第一主图案不同于第二个主要模式。该方法还包括在第一半全局区域中引入第一虚拟图案，使得第一主图案和第一半全局区域中的第一虚拟图案的第一侧壁区域表面密度和第一半全局区域的第二侧壁区域表面密度第二个半全球区域的第二主要模式基本上是相同的密度。

4. 发明申请

US20140167184A1 Dummy Structures and Methods 审中-公开
标题翻译：虚构结构与方法
公开(公告)号：US20140167184A1
公开(公告)日：2014-06-19
申请号：US13959485
申请日：2013-08-05
申请人： Infineon Technologies AG
发明人： Frank Huebinger , Steffen Rothenhaeusser , Kerstin Kaemmer
IPC分类号： H01L21/28 , H01L27/088 , H01L21/283
CPC分类号： H01L21/28008 , H01L21/283 , H01L27/0207 , H01L27/088 , H01L29/6659
摘要： A semiconductor device and a method of making a semiconductor device are disclosed. The method of manufacturing a semiconductor device comprises forming a material layer on a substrate, patterning a first semi-global region with a first main pattern and patterning a second semi-global region with a second main pattern, wherein the first main pattern is different than the second main pattern. The method further comprises introducing a first dummy pattern in the first semi-global region so that a first sidewall area surface density of the first main pattern and the first dummy pattern in the first semi-global region and a second sidewall area surface density of the second main pattern in the second semi-global region are substantially a same density.
摘要翻译：公开了一种半导体器件和制造半导体器件的方法。制造半导体器件的方法包括在衬底上形成材料层，用第一主图案构图第一半全局区域，并用第二主图案构图第二半全局区域，其中第一主图案不同于第二个主要模式。该方法还包括在第一半全局区域中引入第一虚拟图案，使得第一主图案和第一半全局区域中的第一虚拟图案的第一侧壁区域表面密度和第一半全局区域的第二侧壁区域表面密度第二个半全球区域的第二主要模式基本上是相同的密度。

5. 发明申请

US20150001638A1 Silicided Semiconductor Structure and Method of Forming the Same 审中-公开
标题翻译：硅化半导体结构及其形成方法
公开(公告)号：US20150001638A1
公开(公告)日：2015-01-01
申请号：US14488020
申请日：2014-09-16
申请人： Infineon Technologies AG
发明人： Jiang Yan , Henning Haffner , Frank Huebinger , Sun-Oo Kim , Richard Lindsay , Klaus Schruefer
IPC分类号： H01L27/06 , H01L29/06 , H01L29/49
CPC分类号： H01L27/0617 , H01L21/28088 , H01L23/5256 , H01L29/0653 , H01L29/4958 , H01L29/4966 , H01L2924/0002 , H01L2924/00
摘要： A preferred embodiment includes a method of manufacturing a fuse element that includes forming a polysilicon layer over a semiconductor structure, doping the polysilicon layer with carbon or nitrogen, depositing a metal over the polysilicon layer; and annealing the metal and polysilicon layer to form a silicide in an upper portion of the polysilicon layer.
摘要翻译：优选实施例包括制造熔丝元件的方法，该方法包括在半导体结构上形成多晶硅层，用碳或氮掺杂多晶硅层，在多晶硅层上沉积金属; 以及退火所述金属和多晶硅层以在所述多晶硅层的上部形成硅化物。

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