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    • 3. 发明申请
    • CLEANABLE AND REUSABLE BODY FLUID-ABSORBING FABRIC PAD
    • 清洁和可重复使用的体液吸收织物垫
    • US20110172621A1
    • 2011-07-14
    • US12684519
    • 2010-01-08
    • Young Kyu LeeKyung Ju LeeChang Hwan LeeEun Hee KwonRobert FarmerMurray Fischer
    • Young Kyu LeeKyung Ju LeeChang Hwan LeeEun Hee KwonRobert FarmerMurray Fischer
    • A61F13/15
    • A61F13/51A61F13/505A61F13/53708A61F13/53747A61F13/538A61F2013/530664
    • Disclosed is a cleanable and reusable body fluid-absorbing fabric pad to move moisture including sweat and urine away from the skin of a wearer, the body fluid-absorbing fabric pad including, a diffusive fabric layer coming into contact with the skin of the wearer to remove moisture from the skin, an absorbent non-woven layer coming into contact with the diffusive fabric layer, the absorbent non-woven layer comprising at least 5 wt % of a superabsorbent fiber to remove moisture transported from the diffusive fabric layer, and a waterproof film coming into contact with the absorbent non-woven layer and exhibiting waterproofing properties and breathability. The absorbent non-woven layer is formed by needle-punching or thermally bonding superabsorbent fibers, polyethylene/polypropylene bi-component fibers and rayon fibers, wherein the diffusive fabric layer, the absorbent non-woven layer and the waterproof film are stacked and sewed to form the body fluid-absorbing fabric pad. The body fluid-absorbing fabric pad can utilize constituent fabrics having a multiple sublayer structure of the absorbent layer to increase diffusion rate of moisture from the skin of the wearer.
    • 公开了一种可清洁和可重复使用的体液吸收织物垫,用于将湿气(包括汗液和尿液)移离佩戴者的皮肤,体液吸收织物垫包括与穿着者的皮肤接触的漫射织物层 从皮肤去除水分,与漫射织物层接触的吸收性无纺布层,吸收性非织造层包含至少5重量%的超吸收纤维,以去除从漫射织物层输送的水分,以及防水 膜与吸收性无纺布层接触并具有防水性和透气性。 吸收性无纺布层通过针刺或热粘合超吸收纤维,聚乙烯/聚丙烯双组分纤维和人造纤维形成,其中将漫射织物层,吸收性无纺层和防水膜堆叠并缝合到 形成体液吸收织物垫。 体液吸收织物垫可以利用具有吸收层的多次层结构的构成织物以增加水分从穿着者皮肤的扩散速率。
    • 4. 发明授权
    • Split gate flash memory
    • 分闸门闪存
    • US06683340B2
    • 2004-01-27
    • US10334944
    • 2002-12-31
    • Dong Jun KimYoung Kyu LeeMin Soo ChoEui Youl Ryu
    • Dong Jun KimYoung Kyu LeeMin Soo ChoEui Youl Ryu
    • H01L27108
    • H01L27/11521H01L21/28273H01L21/76895H01L27/115H01L27/11524H01L29/42324H01L29/66825H01L29/7887
    • A split-gate flash memory includes a first gate insulating layer formed on a semiconductor substrate; a floating gate formed on the first gate insulating layer; a first spacer surrounding the floating gate and a side wall; a first junction region formed on a predetermined portion of the semiconductor substrate between two adjacent floating gates and having an opposite conductivity to that of the semiconductor substrate; a first conductive line formed on the first junction region between two adjacent first spacers; a second gate insulating layer formed on both a predetermined portion of the semiconductor substrate and the side wall of the first spacer; a word line formed on the second gate insulating layer, and having a vertical side wall and a uniform width; a second spacer formed on the vertical side wall of the word line; a second junction region formed on a portion of the semiconductor substrate adjacent the second spacer and having the same conductivity as the first junction region; an interlayer insulator formed over the whole surface of the semiconductor and having a contact hole, the contact hole formed on a portion of the second junction region; and a second conductive line formed on the interlayer insulator and contacting the second junction region through the contact hole.
    • 分闸式闪存包括形成在半导体衬底上的第一栅极绝缘层; 形成在第一栅绝缘层上的浮栅; 围绕浮动栅极和侧壁的第一间隔件; 形成在所述半导体衬底的预定部分上的两个相邻浮置栅极之间并且具有与所述半导体衬底相反的导电性的第一结区域; 形成在相邻的第一间隔物之间​​的第一结区上的第一导电线; 形成在半导体衬底的预定部分和第一间隔物的侧壁上的第二栅极绝缘层; 形成在所述第二栅极绝缘层上并具有垂直侧壁和均匀宽度的字线; 形成在字线的垂直侧壁上的第二间隔物; 形成在所述半导体衬底的与所述第二间隔物相邻并且具有与所述第一结区相同的导电性的部分上的第二结区; 形成在所述半导体的整个表面上并具有接触孔的层间绝缘体,所述接触孔形成在所述第二接合区域的一部分上; 以及形成在所述层间绝缘体上并通过所述接触孔接触所述第二接合区域的第二导电线。