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    • 6. 发明授权
    • Fabrication method for an organic thin film transistor substrate
    • 有机薄膜晶体管基板的制造方法
    • US08278648B2
    • 2012-10-02
    • US11781109
    • 2007-07-20
    • Tae Young ChoiBo Sung KimKeun Kyu SongSeung Hwan Cho
    • Tae Young ChoiBo Sung KimKeun Kyu SongSeung Hwan Cho
    • H01L29/08H01L51/10
    • H01L51/0096H01L51/0545H01L51/102H01L51/107Y02E10/549
    • An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.
    • 公开了一种简化制造工艺的有机薄膜晶体管(TFT)衬底。 TFT基板包括栅极线和数据线以及连接到栅极线和数据线的有机TFT。 栅极线和数据线限定形成像素电极的像素区域。 第一接触部将数据线连接到有机TFT,第二接触部将像素电极连接到有机TFT。 钝化层覆盖有机TFT。 有机TFT基板还包括具有用于将第一接触部分连接到有机TFT的第一接触孔的第一接触孔,用于将第二接触部分连接到有机TFT的第二接触孔,限定位置的第一子组 栅绝缘层和限定钝化层的位置的第二子库。