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1. 发明授权

US06586163B1 Method of forming fine pattern 有权
标题翻译：形成精细图案的方法
公开(公告)号：US06586163B1
公开(公告)日：2003-07-01
申请号：US09587359
申请日：2000-06-02
申请人： Ichiro Okabe , Hiroki Arai
发明人： Ichiro Okabe , Hiroki Arai
IPC分类号： G03F700
CPC分类号： G03F7/091 , G03F7/0045 , G03F7/16
摘要： There is described a method of forming a fine pattern aimed at depositing a silicon-nitride-based anti-reflection film which is stable even at high temperature and involves small internal stress. The method is also intended to preventing occurrence of a footing pattern (a rounded corner) in a boundary surface between a photoresist and a substrate at the time of formation of a chemically-amplified positive resist pattern on the anti-reflection film. The method includes the steps of forming a silicon-nitride-based film directly on a substrate or on a substrate by way of another layer; and forming a photoresist directly on the silicon-nitride-based film or on the silicon-nitride-based film by way of another layer. The silicon-nitride-based film is deposited while the temperature at which the substrate is to be situated is set so as to fall within the range of 400 to 700° C., through use of a plasma CVD system. The method further includes a step of depositing a silicon-oxide-based film immediately below the photoresist. The silicon-oxide-based film is deposited while the temperature at which the substrate is to be situated is set so as to fall within the range of 400 to 700° C., through use of a plasma CVD system.
摘要翻译：描述了一种形成精细图案的方法，其目的在于沉积即使在高温下也是稳定且涉及小的内应力的氮化硅基抗反射膜。该方法还旨在防止在防反射膜上形成化学放大的正抗蚀剂图案时光致抗蚀剂和基板之间的边界表面中的基脚图案（圆角）的发生。该方法包括以下步骤：通过另一层直接在衬底或衬底上形成氮化硅基膜; 以及通过另一层在氮化硅基膜或氮化硅基膜上直接形成光致抗蚀剂。通过使用等离子体CVD系统，将基板的位置的温度设定为400〜700℃的范围，来沉积氮化硅基膜。该方法还包括在光致抗蚀剂正下方沉积氧化硅基膜的步骤。通过使用等离子体CVD系统，将基板的位置的温度设定为400〜700℃的范围内，沉积硅氧化物系膜。

2. 发明授权

US06992013B1 Method of forming a fine pattern using a silicon-oxide-based film, semiconductor device with a silicon-oxide-based film and method of manufacture thereof 有权
标题翻译：使用氧化硅类膜形成精细图案的方法，具有氧化硅基膜的半导体器件及其制造方法
公开(公告)号：US06992013B1
公开(公告)日：2006-01-31
申请号：US09597161
申请日：2000-06-20
申请人： Ichiro Okabe , Hiroki Arai
发明人： Ichiro Okabe , Hiroki Arai
IPC分类号： H01L21/302
CPC分类号： H01L21/02164 , G03F7/0045 , G03F7/091 , G03F7/16 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/0234 , H01L21/316 , H01L21/31612
摘要： In a method of forming a fine pattern, a silicon-oxide-based film is formed directly or by way of another layer on a substrate or on an underlying layer. The silicon-oxide-based film is formed such that nitrogen content of the surface thereof assumes a value of 0.1 atm. % or less. A chemically-amplified photoresist layer is formed on the silicon-oxide-based film. A mask pattern of a mask is transferred onto the chemically-amplified photoresist layer upon exposure through the mask. Thus, there is prevented generation of a tapered corner in a portion of a resist pattern in the vicinity of a boundary area between the resist pattern and a substrate.
摘要翻译：在形成精细图案的方法中，氧化硅基膜直接或通过另一层形成在衬底上或在下层上形成。形成氧化硅类膜，使得其表面的氮含量为0.1atm。％或更少。在氧化硅基膜上形成化学放大型光致抗蚀剂层。当通过掩模曝光时，掩模的掩模图案被转移到化学放大的光致抗蚀剂层上。因此，防止在抗蚀剂图案和基板之间的边界区域附近的抗蚀剂图案的一部分中产生锥形角。

3. 发明授权

US5346033A Power transmission apparatus for vehicle 失效
标题翻译：车辆动力传动装置
公开(公告)号：US5346033A
公开(公告)日：1994-09-13
申请号：US823203
申请日：1992-01-21
申请人： Ichiro Okabe , Satoshi Kawai , Hideki Higashira , Hirakushi Suzou
发明人： Ichiro Okabe , Satoshi Kawai , Hideki Higashira , Hirakushi Suzou
IPC分类号： B60K17/35 , B60K23/08
CPC分类号： B60K17/3505 , B60K23/0808
摘要： A power transmission apparatus for vehicle capable of obtaining a plurality of transmission characteristics by moving spools of variable throttle member 6 according to controlling current flowing to a driving coil 7 by steps, wherein a spool chamber 60 housing a first and second spools 61, 62 therein is communicated with discharge side of a vane pump 3 according to first and second communicating holes 54, 55. And by controlling current flowing to the driving coil 7 by steps, two kinds of magnetic fields, intense and weak are formed in the spool chamber 60. In the case where the first spool 61 moves to the position where it is contacted with the inside end of the spool chamber 60 by the action of the weak magnetic field, it closes an opening end of one communicating hole 54, and in the case where the second spool 62 moves to the position where it is contacted with the first spool 61, it opens an opening end of the other communicating hole 55. Three kinds of different transmission characteristics are obtained in the above mentioned cases and case of current cutoff, and the positions of the first and second spools 61, 62 do not vary in the respective cases. Thereby, positional variation caused at, spools are prevented and the respective transmission characteristics are stabilized.
摘要翻译：一种用于车辆的动力传递装置，其能够通过根据通过步进流向驱动线圈7的电流来移动可变节流部件6的卷轴来获得多个传动特性，其中，在其中容纳第一和第二卷轴61,62的卷轴室60 根据第一和第二连通孔54,55与叶片泵3的排出侧连通。通过控制流过驱动线圈7的电流，通过步进，在卷筒室60中形成两种强度和弱的磁场在第一卷轴61通过弱磁场的作用移动到与卷筒室60的内端接触的位置的情况下，封闭一个连通孔54的开口端，在该情况下其中第二卷轴62移动到与第一卷轴61接触的位置，它打开另一个连通孔55的开口端。三种不同的传输特征在上述情况和电流截止的情况下获得了特征，并且在各种情况下第一和第二线轴61,62的位置都不变化。由此，防止在线轴处产生的位置变化，并且各自的传输特性稳定。

4. 发明授权

US06852619B2 Dual damascene semiconductor devices 失效
标题翻译：双镶嵌半导体器件
公开(公告)号：US06852619B2
公开(公告)日：2005-02-08
申请号：US10158011
申请日：2002-05-31
申请人： Ichiro Okabe
发明人： Ichiro Okabe
IPC分类号： H01L21/768 , H01L23/532 , H01L21/4763
CPC分类号： H01L21/76808 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device has a wiring slot and two wiring layers connected by a via hole. The semiconductor device is formed using a photodegradable polymer film that degrades under UV radiation. An incidence angle θ of radiation rays in the irradiating step with respect to a perpendicular direction of a surface of the substrate, fulfills the relationship tan θ≧H+H′/2(D+D′) wherein D is a depth of the wiring slot, D′ is a thickness of the photoresist film, H is a diameter of the via hole in a opening of the wiring slot, and H′ is the width of the wiring slot.
摘要翻译：半导体器件具有布线槽和通过通孔连接的两个布线层。使用在紫外线辐射下降解的可光降解聚合物膜形成半导体器件。照射步骤中的辐射线相对于衬底表面的垂直方向的入射角θ满足tanθ= H + H'/ 2（D + D'）的关系，其中D是布线槽，D'是光致抗蚀剂膜的厚度，H是布线槽的开口中的通孔的直径，H'是布线槽的宽度。

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