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1. 发明授权

US3977920A Method of fabricating semiconductor device using at least two sorts of insulating films different from each other 失效
标题翻译：使用彼此不同的至少两种绝缘膜制造半导体器件的方法
公开(公告)号：US3977920A
公开(公告)日：1976-08-31
申请号：US500067
申请日：1974-08-23
申请人： Ichiro Imaizumi , Tadao Kaji , Akio Hayasaka , Keijiro Uehara
发明人： Ichiro Imaizumi , Tadao Kaji , Akio Hayasaka , Keijiro Uehara
IPC分类号： H01L21/033 , H01L29/735 , H01L21/22
CPC分类号： H01L21/033 , H01L29/735 , Y10S148/043 , Y10S148/085 , Y10S148/096 , Y10S148/106 , Y10S148/114 , Y10S148/167
摘要： A lateral transistor or the like is made by the steps of forming a first insulating layer on a semiconductor substrate and providing a first hole in this insulating layer so as to expose a first surface portion of the substrate. An impurity of a first conductivity type is introduced through the hole and a second hole is formed in the insulating layer so as to expose a second surface portion of the substrate spaced apart from the first portion. Then, a second insulating layer of a material different from that of the first layer is formed on the first insulating layer and on the first and second surface portions of the substrate. Subsequently, third and fourth holes are formed in the second insulating layer within the confines of these holes to expose at least portions of the first and second surface portions of the substrate. Then, an impurity of a second conductivity type is introduced into the exposed first and second surface portions of the substrate through the third and fourth holes.
摘要翻译：横向晶体管等通过在半导体衬底上形成第一绝缘层并在该绝缘层中提供第一孔以暴露衬底的第一表面部分的步骤制成。通过孔引入第一导电类型的杂质，并且在绝缘层中形成第二孔，以暴露基板与第一部分间隔开的第二表面部分。然后，在第一绝缘层和基板的第一和第二表面部分上形成与第一层不同的材料的第二绝缘层。随后，在这些孔的范围内的第二绝缘层中形成第三和第四孔，以暴露基板的第一和第二表面部分的至少一部分。然后，通过第三孔和第四孔将第二导电类型的杂质引入到基板的暴露的第一和第二表面部分中。

2. 发明授权

US4640721A Method of forming bipolar transistors with graft base regions 失效
标题翻译：用接枝基区形成双极晶体管的方法
公开(公告)号：US4640721A
公开(公告)日：1987-02-03
申请号：US741525
申请日：1985-06-05
申请人： Keijiro Uehara , Hisayuki Higuchi , Akio Hayasaka
发明人： Keijiro Uehara , Hisayuki Higuchi , Akio Hayasaka
IPC分类号： H01L21/225 , H01L21/285 , H01L21/385
CPC分类号： H01L21/2257 , H01L21/28525
摘要： After an end part of a polycrystalline silicon film has been oxidized from an exposed side surface thereof, a silicon dioxide film formed is removed, and an opening thus provided is used for diffusing an impurity into a semiconductor substrate so as to form a graft base region.This measure is effective for fabricating a semiconductor device of small required area at high precision.
摘要翻译：在多晶硅膜的一部分已经从其暴露的侧表面氧化后，除去形成的二氧化硅膜，并且将这样设置的开口用于将杂质扩散到半导体衬底中以形成接枝基区。该措施对于以高精度制造所需面积小的半导体器件是有效的。

3. 发明授权

US5461501A Liquid crystal substrate having 3 metal layers with slits offset to block light from reaching the substrate 失效
标题翻译：具有3个具有狭缝的金属层的液晶基板偏移以阻挡光到达基板
公开(公告)号：US5461501A
公开(公告)日：1995-10-24
申请号：US132412
申请日：1993-10-06
申请人： Hideo Sato , Minoru Hoshino , Yuji Mori , Shinichi Komura , Yoshiharu Nagae , Ichirou Katsuyama , Tetsuya Nagata , Akira Arimoto , Akio Hayasaka
发明人： Hideo Sato , Minoru Hoshino , Yuji Mori , Shinichi Komura , Yoshiharu Nagae , Ichirou Katsuyama , Tetsuya Nagata , Akira Arimoto , Akio Hayasaka
IPC分类号： G02F1/1335 , G02F1/1362 , G02F1/1343
CPC分类号： G02F1/136277 , G02F1/133512 , G09G2310/0289
摘要： A liquid crystal light valve includes a semiconductor substrate having a region for a plurality of switching elements formed in a matrix form. A first metal layer is formed on the surface of the semiconductor substrate through an insulating layer and divided into a plurality of parts by first slits. A second metal layer is formed on the first metal layer through another insulating layer and divided into a plurality of parts by second slits. A third metal layer is formed on the second metal layer through still another insulating layer and divided into a plurality of parts by third slits. An opposite substrate has an opposite electrode on a surface thereof, disposed so as to be opposite to said third metal layer through an interval on the opposite electrode side. Liquid crystal fills the interval between said opposite electrode and the third metal layer.
摘要翻译：液晶光阀包括具有以矩阵形式形成的多个开关元件的区域的半导体衬底。第一金属层通过绝缘层形成在半导体衬底的表面上，并通过第一狭缝分成多个部分。第二金属层通过另一绝缘层形成在第一金属层上，并通过第二狭缝分成多个部分。第三金属层通过另一绝缘层形成在第二金属层上，并由第三狭缝分成多个部分。相对的基板在其表面上具有相对电极，通过相对电极侧的间隔设置成与所述第三金属层相对。液晶填充所述相对电极和第三金属层之间的间隔。

4. 发明授权

US3933540A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US3933540A
公开(公告)日：1976-01-20
申请号：US495789
申请日：1974-08-08
申请人： Hiroyuki Kondo , Atsuo Hotta , Akio Hayasaka , Michio Suzuki
发明人： Hiroyuki Kondo , Atsuo Hotta , Akio Hayasaka , Michio Suzuki
IPC分类号： H01L21/76 , H01L21/00 , H01L21/32 , H01L21/331 , H01L21/74 , H01L21/762 , H01L23/535 , H01L29/73 , H01L29/732 , H01L21/22
CPC分类号： H01L29/7325 , H01L21/00 , H01L21/32 , H01L21/74 , H01L21/76202 , H01L23/535 , H01L2924/0002 , Y10S148/037 , Y10S148/085 , Y10S148/117
摘要： A method of manufacturing bipolar transistor elements in a semiconductor integrated circuit isolated by a silicon oxide film, comprises the steps of forming a semiconductor layer of one conductivity type on a semiconductor substrate of the opposite conductivity type, in which each collector region of the one conductivity type is formed, diffusing an impurity of the opposite conductivity type for each base region into the surface of the semiconductor layer of the one conductivity type, performing oxidation down to the surface of the semiconductor substrate by employing an oxidation-resisting film as a mask, to thereby form an isolating silicon oxide film, and diffusing an impurity of the one conductivity type for each emitter region into a selected part of the surface of the diffused semiconductor layer of the opposite conductivity type, whereby the base width of the bipolar transistor elements can be narrowed.
摘要翻译：在由氧化硅膜隔离的半导体集成电路中制造双极晶体管元件的方法包括以下步骤：在相反导电类型的半导体衬底上形成一种导电类型的半导体层，其中一个导电性的每个集电极区域形成，将每个基极区域的相反导电类型的杂质扩散到一种导电类型的半导体层的表面中，通过使用抗氧化膜作为掩模进行氧化到半导体衬底的表面，从而形成隔离氧化硅膜，并且将用于每个发射区的一种导电类型的杂质扩散到相反导电类型的扩散半导体层的表面的选定部分中，由此双极晶体管元件的基极宽度可以缩小

5. 发明授权

US06693691B2 LCD and projection type display using same 失效
标题翻译： LCD和投影型显示器使用相同
公开(公告)号：US06693691B2
公开(公告)日：2004-02-17
申请号：US10192152
申请日：2002-07-11
申请人： Hideo Sato , Minoru Hoshino , Yuji Mori , Shinichi Komura , Yoshiharu Nagae , Ichirou Katsuyama , Tetsuya Nagata , Akira Arimoto , Akio Hayasaka
发明人： Hideo Sato , Minoru Hoshino , Yuji Mori , Shinichi Komura , Yoshiharu Nagae , Ichirou Katsuyama , Tetsuya Nagata , Akira Arimoto , Akio Hayasaka
IPC分类号： G02F1136
CPC分类号： G02F1/136277 , G02F1/133512 , G09G2310/0289
摘要： A liquid crystal light valve includes a semiconductor substrate having a region for a plurality of switching elements formed in a matrix form. A first metal layer is formed on the surface of the semiconductor substrate through an insulating layer and divided into a plurality of parts by first slits. A second metal layer is formed on the first metal layer through another insulating layer and divided into a plurality of parts by second slits. A third metal layer is formed on the second metal layer through still another insulating layer and divided into a plurality of parts by third slits. An opposite substrate has an opposite electrode on a surface thereof, disposed so as to be opposite to said third metal layer through an interval on the opposite electrode side. Liquid crystal fills the interval between said opposite electrode and the third metal layer.
摘要翻译：液晶光阀包括具有以矩阵形式形成的多个开关元件的区域的半导体衬底。第一金属层通过绝缘层形成在半导体衬底的表面上，并通过第一狭缝分成多个部分。第二金属层通过另一绝缘层形成在第一金属层上，并通过第二狭缝分成多个部分。第三金属层通过另一绝缘层形成在第二金属层上，并由第三狭缝分成多个部分。相对的基板在其表面上具有相对电极，通过相对电极侧的间隔设置成与所述第三金属层相对。液晶填充所述相对电极和第三金属层之间的间隔。

6. 发明授权

US4008107A Method of manufacturing semiconductor devices with local oxidation of silicon surface 失效
标题翻译：制造具有硅表面局部氧化的半导体器件的方法
公开(公告)号：US4008107A
公开(公告)日：1977-02-15
申请号：US426352
申请日：1973-12-19
申请人： Akio Hayasaka , Hideo Noda , Michio Suzuki , Hiroyuki Kondo
发明人： Akio Hayasaka , Hideo Noda , Michio Suzuki , Hiroyuki Kondo
IPC分类号： H01L21/00 , H01L21/316 , H01L21/32 , H01L21/762 , H01L27/00 , H01L29/00 , H01L21/76 , H01L27/04
CPC分类号： H01L27/00 , H01L21/00 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/31662 , H01L21/32 , H01L21/76294 , H01L29/00 , Y10S148/026 , Y10S148/036 , Y10S148/145
摘要： An improved method of manufacturing a semiconductor device employs a local oxidation process in which an oxide isolation region is formed by locally oxidizing a silicon epitaxial layer, using a nitride-oxide double layer for masking purposes, with a P.sup.+ type region being formed by the diffusion of an impurity into the silicon epitaxial layer using the oxide isolation region, which has an "oxide beak", as a diffusion mask. An additional region of the same conductivity type as the P.sup.+ type diffused region is provided to be contiguous to the P.sup.+ type diffused region, so that a PN junction terminates at a silicon surface remote from the electrode to be connected to the P.sup.+ diffused region.As a result, disadvantages caused by the oxide beak, such as the imperfect protection of the PN junction and short-circuiting between the electrode and the epitaxial layer through pin holes in the oxide beak can be eliminated.
摘要翻译：制造半导体器件的改进方法采用局部氧化工艺，其中通过局部氧化硅外延层而形成氧化物隔离区域，使用氮化物 - 氧化物双层进行掩蔽，形成P +型区域通过使用具有“氧化物喙”的氧化物隔离区将杂质扩散到硅外延层中作为扩散掩模。提供与P +型扩散区域相同的导电类型的附加区域与P +型扩散区域相邻，使得PN结终止于远离电极的硅表面以连接到 P +扩散区域。

7. 发明授权

US06879358B2 LCD and projection type display using same 失效
标题翻译： LCD和投影型显示器使用相同
公开(公告)号：US06879358B2
公开(公告)日：2005-04-12
申请号：US10697883
申请日：2003-10-31
申请人： Hideo Sato , Minoru Hoshino , Yuji Mori , Shinichi Komura , Yoshiharu Nagae , Ichirou Katsuyama , Tetsuya Nagata , Akira Arimoto , Akio Hayasaka
发明人： Hideo Sato , Minoru Hoshino , Yuji Mori , Shinichi Komura , Yoshiharu Nagae , Ichirou Katsuyama , Tetsuya Nagata , Akira Arimoto , Akio Hayasaka
IPC分类号： G02F1/1335 , G02F1/1362 , G02F1/1343
CPC分类号： G02F1/136277 , G02F1/133512 , G09G2310/0289
摘要： A liquid crystal light valve includes a semiconductor substrate having a region for a plurality of switching elements formed in a matrix form. A first metal layer is formed on the surface of the semiconductor substrate through an insulating layer and divided into a plurality of parts by first slits. A second metal layer is formed on the first metal layer through another insulating layer and divided into a plurality of parts by second slits. A third metal layer is formed on the second metal layer through still another insulating layer and divided into a plurality of parts by third slits. An opposite substrate has an opposite electrode on a surface thereof, disposed so as to be opposite to said third metal layer through an interval on the opposite electrode side. Liquid crystal fills the interval between said opposite electrode and the third metal layer.
摘要翻译：液晶光阀包括具有以矩阵形式形成的多个开关元件的区域的半导体衬底。第一金属层通过绝缘层形成在半导体衬底的表面上，并通过第一狭缝分成多个部分。第二金属层通过另一绝缘层形成在第一金属层上，并通过第二狭缝分成多个部分。第三金属层通过另一绝缘层形成在第二金属层上，并由第三狭缝分成多个部分。相对的基板在其表面上具有相对电极，通过相对电极侧的间隔设置成与所述第三金属层相对。液晶填充所述相对电极和第三金属层之间的间隔。

8. 发明授权

US4260430A Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4260430A
公开(公告)日：1981-04-07
申请号：US50202
申请日：1979-06-20
申请人： Kazuo Itoh , Katsumi Ogiue , Akio Hayasaka
发明人： Kazuo Itoh , Katsumi Ogiue , Akio Hayasaka
IPC分类号： H01L21/8222 , H01L21/33 , H01L21/331 , H01L21/8226 , H01L27/02 , H01L27/06 , H01L27/082 , H01L29/70 , H01L29/73 , H03K19/091 , H01L21/263 , H01L7/36
CPC分类号： H01L21/8226 , H01L27/0237
摘要： An I.sup.2 L device is disclosed wherein the P type injector region of a PNP transistor is formed so as to be buried in an N.sup.- type epitaxial layer below the P type collector region of the PNP transistor, whereby the carrier injection efficiency of the transistor is improved and a high switching speed is obtained. The I.sup.2 L device further includes an inversed NPN transistor wherein the abovementioned P type collector region of the PNP transistor works as a base region of the NPN transistor, an N type collector region is formed in the P type base region, and the abovementioned P type injector region extends between the N.sup.- type epitaxial layer and an N.sup.+ type substrate except below the N type collector region so that the effective emitter portion of the NPN transistor is limited to a specific area immediately below the N type collector region, thereby to reduce the power consumption.
摘要翻译：公开了一种I2L器件，其中PNP晶体管的P型注入器区域被形成为埋入在PNP晶体管的P型集电极区域之下的N型外延层中，从而提高了晶体管的载流子注入效率并获得高切换速度。 I2L器件还包括反向NPN晶体管，其中PNP晶体管的上述P型集电极区域用作NPN晶体管的基极区域，在P型基极区域中形成N型集电极区域，并且上述P型注入器区域在N型外延层和除了N型集电极区域之外的N +型衬底之间延伸，使得NPN晶体管的有效发射极部分被限制在紧邻N型集电极区域的特定区域，从而降低功率消费。

9. 发明授权

US06686976B2 Liquid crystal light valve and projection type display using same 失效
标题翻译：液晶光阀和投影型显示器使用相同
公开(公告)号：US06686976B2
公开(公告)日：2004-02-03
申请号：US09870933
申请日：2001-06-01
申请人： Hideo Sato , Minoru Hoshino , Yuji Mori , Shinichi Komura , Yoshiharu Nagae , Ichirou Katsuyama , Tetsuya Nagata , Akira Arimoto , Akio Hayasaka
发明人： Hideo Sato , Minoru Hoshino , Yuji Mori , Shinichi Komura , Yoshiharu Nagae , Ichirou Katsuyama , Tetsuya Nagata , Akira Arimoto , Akio Hayasaka
IPC分类号： G02F1136
CPC分类号： G02F1/136277 , G02F1/133512 , G09G2310/0289
摘要： A liquid crystal light valve includes a semiconductor substrate having a region for a plurality of switching elements formed in a matrix form. A first metal layer is formed on the surface of the semi-conductor substrate through an insulating layer and divided into a plurality of parts by first slits. A second metal layer is formed on the first metal layer through another insulating layer and divided into a plurality of parts by second slits. A third metal layer is formed on the second metal layer through still another insulating layer and divided into a plurality of parts by third slits. An opposite substrate has an opposite electrode on a surface thereof, disposed so as to be opposite to said third metal layer through an interval on the opposite electrode side. Liquid crystal fills the interval between said opposite electrode and the third metal layer.
摘要翻译：液晶光阀包括具有以矩阵形式形成的多个开关元件的区域的半导体衬底。第一金属层通过绝缘层形成在半导体基板的表面上，并通过第一狭缝分成多个部分。第二金属层通过另一绝缘层形成在第一金属层上，并通过第二狭缝分成多个部分。第三金属层通过另一绝缘层形成在第二金属层上，并由第三狭缝分成多个部分。相对的基板在其表面上具有相对电极，通过相对电极侧的间隔设置成与所述第三金属层相对。液晶填充所述相对电极和第三金属层之间的间隔。

10. 发明授权

US06437842B1 LCD and projection type display using three metalization layers and black layer 失效
标题翻译： LCD和投影型显示采用三层金属化层和黑色层
公开(公告)号：US06437842B1
公开(公告)日：2002-08-20
申请号：US09465422
申请日：1999-12-16
申请人： Hideo Sato , Minoru Hoshino , Yuji Mori , Shinichi Komura , Yoshiharu Nagae , Ichirou Katsuyama , Tetsuya Nagata , Akira Arimoto , Akio Hayasaka
发明人： Hideo Sato , Minoru Hoshino , Yuji Mori , Shinichi Komura , Yoshiharu Nagae , Ichirou Katsuyama , Tetsuya Nagata , Akira Arimoto , Akio Hayasaka
IPC分类号： G02F11335
CPC分类号： G02F1/136277 , G02F1/133512 , G09G2310/0289
摘要： A liquid crystal light valve includes a semiconductor substrate having a region for a plurality of switching elements formed in a matrix form. A first metal layer is formed on the surface of the semi-conductor substrate through an insulating layer and divided into a plurality of parts by first slits. A second metal layer is formed on the first metal layer through another insulating layer and divided into a plurality of parts by second slits. A third metal layer is formed on the second metal layer through still another insulating layer and divided into a plurality of parts by third slits. An opposite substrate has an opposite electrode on a surface thereof, disposed so as to be opposite to said third metal layer through an interval on the opposite electrode side. Liquid crystal fills the interval between said opposite electrode and the third metal layer.
摘要翻译：液晶光阀包括具有以矩阵形式形成的多个开关元件的区域的半导体衬底。第一金属层通过绝缘层形成在半导体基板的表面上，并通过第一狭缝分成多个部分。第二金属层通过另一绝缘层形成在第一金属层上，并通过第二狭缝分成多个部分。第三金属层通过另一绝缘层形成在第二金属层上，并由第三狭缝分成多个部分。相对的基板在其表面上具有相对电极，通过相对电极侧的间隔设置成与所述第三金属层相对。液晶填充所述相对电极和第三金属层之间的间隔。

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