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1. 发明授权

US4748078A Warp knitted lace fabrics 失效
标题翻译：经编针织蕾丝面料
公开(公告)号：US4748078A
公开(公告)日：1988-05-31
申请号：US938291
申请日：1986-12-05
申请人： Ichiro Doi , Katsuhiko Ichii
发明人： Ichiro Doi , Katsuhiko Ichii
IPC分类号： D04B21/12 , D03D15/00 , D04B1/08
CPC分类号： D04B21/12 , Y10T442/45
摘要： A warp knitted lace fabric comprising a plurality of chain stitches and a ground insertion yarn, pattern yarn and/or other yarn interconnecting said chain stitches, said plurality of chain stitches being made either as a whole or in part by a heat bonding yarn comprising a lace knitting yarn carrying a low-melting thermoplastic synthetic resin covering and said heat bonding yarn being thermally jointed to itself or to other component yarns at intersections.
摘要翻译：一种经编针织花边织物，其包括多个链式线迹和接地插入纱线，图案纱线和/或连接所述链式线迹的其它纱线，所述多条链式线迹由整体上或部分地由热粘合纱线构成，携带低熔点热塑性合成树脂覆盖物的所述花边编织纱线和所述热粘合纱线与其自身或交叉点处的其它组分纱线热接合。

2. 发明申请

US20130269992A1 INSULATING STRUCTURE AND PRODUCTION METHOD OF SAME 审中-公开
标题翻译：绝缘结构及其生产方法
公开(公告)号：US20130269992A1
公开(公告)日：2013-10-17
申请号：US13997541
申请日：2011-12-22
申请人： Ichiro Doi , Shozo Takada , Reiko Mishima , Hideo Saito
发明人： Ichiro Doi , Shozo Takada , Reiko Mishima , Hideo Saito
IPC分类号： H05K1/02 , H01B3/00
CPC分类号： H05K1/0296 , C08K2201/003 , H01B3/008 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/76229 , H01L21/76837
摘要： An insulating structure is formed that favorably maintains gap-fill capability of a narrow width pattern in a memory cell while also preventing the formation of cracks in an insulator in a peripheral circuit, and has the memory cell and peripheral circuit within the same layer. The present invention provides an insulating structure comprising a substrate and a circuit pattern formed on the substrate, wherein the circuit pattern has a narrow width region having a narrow width pattern of a width of 30 nm or less and a wide width region having a wide width pattern of a width of greater than 100 nm in the same layer, and the same insulating composition is formed within the narrow width pattern and within the wide width pattern.
摘要翻译：形成绝缘结构，其有利地保持存储单元中的窄宽度图案的间隙填充能力，同时还防止在外围电路中的绝缘体中形成裂纹，并且存储单元和外围电路在同一层内。本发明提供一种绝缘结构，其包括基板和形成在基板上的电路图案，其中电路图案具有窄宽度范围窄的宽度区域，宽度为30nm以下的宽度图案，宽幅区域宽在相同层中宽度大于100nm的图案，并且在窄宽度图案内并且在宽幅图案内形成相同的绝缘组合物。

3. 发明授权

US06479374B1 Method of manufacturing interconnection structural body 失效
标题翻译：互连结构体的制造方法
公开(公告)号：US06479374B1
公开(公告)日：2002-11-12
申请号：US09647310
申请日：2000-09-27
申请人： Takaaki Ioka , Tsuneaki Tanabe , Ichiro Doi
发明人： Takaaki Ioka , Tsuneaki Tanabe , Ichiro Doi
IPC分类号： H01L2144
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02345 , H01L21/31695
摘要： Disclosed is a method for producing a circuit structure having an insulator layer comprising a porous silicon oxide thin film, which comprises (1) forming a preliminary insulator layer comprising a silicon oxide-organic polymer composite thin film formed on a substrate, which silicon oxide-organic polymer composite thin film comprises a silicon oxide having an organic polymer dispersed therein, (2) forming, in the preliminary insulator layer, a groove which defines a pattern for a circuit, (3) forming, in the groove, a metal layer which functions as a circuit, and (4) removing the organic polymer from the preliminary insulator layer to render the preliminary insulator layer porous, thereby converting the preliminary insulator layer to an insulator layer comprising a porous silicon oxide thin film. By the method of the present invention, the capacitance between mutually adjacent circuit lines (line-to-line capacitance) in the circuit structure can be lowered.
摘要翻译：公开了一种具有包括多孔氧化硅薄膜的绝缘体层的电路结构的方法，该方法包括：（1）形成包含在基板上形成的氧化硅 - 有机聚合物复合薄膜的预备绝缘体层，有机聚合物复合薄膜包括其中分散有有机聚合物的氧化硅，（2）在预备绝缘体层中形成限定电路图案的凹槽，（3）在凹槽中形成金属层，作为电路起作用，（4）从预备绝缘体层除去有机聚合物，使预备绝缘体层多孔化，由此将预备绝缘体层转化为包含多孔氧化硅薄膜的绝缘体层。通过本发明的方法，可以降低电路结构中相互相邻的电路线之间的电容（线对线电容）。

4. 发明授权

US6041096A Method and apparatus for total reflection X-ray fluorescence spectroscopy 失效
标题翻译：全反射X射线荧光光谱法的方法和装置
公开(公告)号：US6041096A
公开(公告)日：2000-03-21
申请号：US11046
申请日：1998-02-06
申请人： Ichiro Doi , Shoichiro Tonomura
发明人： Ichiro Doi , Shoichiro Tonomura
IPC分类号： G01N23/223
CPC分类号： G01N23/223 , G01N2223/076
摘要： A method and an apparatus for total reflection X-ray fluorescence spectroscopy which facilitates total reflection X-ray fluorescent spectroscopy of a sample having irregularities. Primary X-rays are emitted to a standard sample having a smooth surface at a plurality of irradiation angles, a characteristic X-ray spectrum is measured at each of irradiation angles, a characteristic X-ray intensity and a scattered X-ray intensity are determined therefrom, a calibration coefficient is determined in the form of a function of the scattered X-ray intensity by dividing a know quantity of an analyzed element of the standard sample by the determined characteristic X-ray intensity, a characteristic X-ray spectrum when a measured sample having irregularities on the surface is irradiated with primary X-rays at a reference irradiation angle smaller than a critical total reflection angle is measured a characteristic X-ray intensity and a scattered X-ray intensity for the analyzed element are determined therefrom, a calibration coefficient to be applied to the measured sample is determined on the basis of the determined scattered X-ray intensity, and the quantity of the analyzed element is calculated by multiplying the calibration coefficient with the characteristic X-ray intensity for the analyzed element.
摘要翻译： PCT No.PCT / JP96 / 02185 Sec。 371日期1998年2月6日 102（e）日期1998年2月6日PCT提交1996年8月2日PCT公布。公开号WO97 / 06430 日期1997年2月20日一种全反射X射线荧光光谱法的方法和装置，其促进具有不规则性的样品的全反射X射线荧光光谱。将主X射线发射到具有多个照射角度的光滑表面的标准样品，在每个照射角度测量特征X射线光谱，确定特征X射线强度和散射X射线强度由此，通过将标准样品的分析元素的知识量除以所确定的特征X射线强度，特征X射线光谱，将其分解为散射X射线强度的函数的形式，确定校准系数测量表面上具有不规则性的测量样品，以小于临界全反射角的参考照射角度照射初级X射线，测定分析元件的特征X射线强度和散射X射线强度，基于确定的散射X射线强度和所分析的量来确定应用于测量样品的校准系数通过将校准系数与分析元件的特征X射线强度相乘来计算元素。

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