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1. 发明授权

US5600157A Light-emitting and light-sensing diode array device, and light-emitting and light-sensing diode with improved sensitivity 失效
标题翻译：发光和感光二极管阵列器件，以及灵敏度提高的发光和感光二极管
公开(公告)号：US5600157A
公开(公告)日：1997-02-04
申请号：US654756
申请日：1996-05-29
申请人： Ichimatsu Abiko , Yukio Nakamura , Katsuzo Kaminishi , Takatoku Shimizu , Kazuo Tokura , Yasuo Iguti , Hiroshi Furuya , Mituhiko Ogihara , Masumi Taninaka , Mio Chiba
发明人： Ichimatsu Abiko , Yukio Nakamura , Katsuzo Kaminishi , Takatoku Shimizu , Kazuo Tokura , Yasuo Iguti , Hiroshi Furuya , Mituhiko Ogihara , Masumi Taninaka , Mio Chiba
IPC分类号： H01L31/0352 , H01L31/103 , H01L33/00 , H01L33/24 , H01L27/15 , H01L31/12 , H01L31/153
CPC分类号： H01L33/24 , H01L31/03529 , H01L31/1035 , H01L33/0008 , H01L2924/01015 , H01L2924/01031 , H01L2924/10329 , Y02E10/50
摘要： According to a first aspect of the invention, a light-emitting and light-sensing diode has a doped region with a depth not exceeding 2 .mu.m, for adequate sensitivity, and an impurity concentration of at least 5.times.10.sup.20 atoms/cm.sup.-3, for adequate emission. According to a second aspect of the invention, a light-emitting and light-sensing diode has a doped region with a deep part and a shallow part, and the area of the shallow part is increased to enhance the sensitivity of the diode. This may be done by providing the doped region with a meandering edge, or with one or more interior islands, or by forming the deep and shallow parts separately.
摘要翻译：根据本发明的第一方面，发光和感光二极管具有深度不超过2μm的掺杂区域，以获得足够的灵敏度，并且杂质浓度至少为5×10 20原子/ cm -3，用于充分排放根据本发明的第二方面，发光和感光二极管具有具有深部分和浅部分的掺杂区域，并且浅部分的面积增加以增强二极管的灵敏度。这可以通过为掺杂区域提供曲折边缘，或者与一个或多个内部岛屿，或通过分开形成深部和浅部来实现。

2. 发明授权

US5457488A Method and apparatus for controlling array of light-emitting elements 失效
标题翻译：用于控制发光元件阵列的方法和装置
公开(公告)号：US5457488A
公开(公告)日：1995-10-10
申请号：US225724
申请日：1994-04-11
申请人： Yukio Nakamura , Hiroshi Furuya , Takatoku Shimizu , Kazuo Tokura , Mio Chiba , Kengo Ohtaka , Takeyuki Yanagibashi , Takashi Ishizaki
发明人： Yukio Nakamura , Hiroshi Furuya , Takatoku Shimizu , Kazuo Tokura , Mio Chiba , Kengo Ohtaka , Takeyuki Yanagibashi , Takashi Ishizaki
IPC分类号： H04N1/40 , H04N1/405 , G01D15/10
CPC分类号： H04N1/40031 , H04N1/4056
摘要： An array of light-emitting elements is switched on and off to produce a graded-intensity image on a photosensitive medium. Each light-emitting element is controlled by M-bit data representing the intensity of one image pixel, where M is a fixed integer greater than one. M strobe signals are generated for non-overlapping time intervals of different lengths, to strobe the M data bits for each light-emitting element. When strobed, each data bit switches its corresponding light-emitting element on or off. Image intensity depends on the total amount of time for which each light-emitting element is switched on.
摘要翻译：打开和关闭一组发光元件，以在感光介质上产生渐变强度图像。每个发光元件由表示一个图像像素的强度的M位数据控制，其中M是大于1的固定整数。为不同长度的非重叠时间间隔产生M个选通信号，以选通每个发光元件的M个数据位。当选通时，每个数据位都打开或关闭相应的发光元件。图像强度取决于每个发光元件接通的总时间。

3. 发明授权

US5955747A High-density light-emitting-diode array utilizing a plurality of isolation channels 失效
标题翻译：利用多个隔离通道的高密度发光二极管阵列
公开(公告)号：US5955747A
公开(公告)日：1999-09-21
申请号：US900064
申请日：1997-07-23
申请人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
发明人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L27/153
摘要： A light-emitting-diode array is formed on a substrate having an upper layer of a semiconducting material and a lower layer of an insulating or semi-insulating material. The upper layer is divided into blocks by isolation channels that cut completely through the upper layer. The light-emitting diodes, which are formed by selective diffusion of an impurity into the upper layer, are arranged in a single row, with at least two light-emitting diodes in each block of the upper layer. Each block has a block electrode that drives the light-emitting diodes in the block. The row of light-emitting diodes is paralleled by a number of shared lines which cross the isolation channels. Each shared line is coupled to a plurality of light-emitting diodes in different blocks.
摘要翻译：在具有半导体材料的上层和绝缘或半绝缘材料的下层的基板上形成发光二极管阵列。上层通过完全穿过上层的隔离通道分成块。通过将杂质选择性地扩散到上层中而形成的发光二极管以单列排列，在上层的每个块中至少有两个发光二极管。每个块具有驱动块中的发光二极管的块电极。这排发光二极管与穿过隔离通道的多条共用线并联。每个共享线路连接到不同块中的多个发光二极管。

4. 发明授权

US06563138B2 Low-cost, high-density light-emitting-diode array and fabrication method thereof 有权
标题翻译：低成本，高密度发光二极管阵列及其制造方法
公开(公告)号：US06563138B2
公开(公告)日：2003-05-13
申请号：US09750299
申请日：2000-12-29
申请人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
发明人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
IPC分类号： H01L3300
CPC分类号： H01L27/153
摘要： A light-emitting-diode array is formed on a substrate having an upper layer of a semiconducting material and a lower layer of an insulating or semi-insulating material. The upper layer is divided into blocks by isolation channels that cut completely through the upper layer. The light-emitting diodes, which are formed by selective diffusion of an impurity into the upper layer, are arranged in a single row, with at least two light-emitting diodes in each block of the upper layer. Each block has a block electrode that drives the light-emitting diodes in the block. The row of light-emitting diodes is paralleled by a number of shared lines which cross the isolation channels. Each shared line is coupled to a plurality of light-emitting diodes in different blocks.
摘要翻译：在具有半导体材料的上层和绝缘或半绝缘材料的下层的基板上形成发光二极管阵列。上层通过完全穿过上层的隔离通道分成块。通过将杂质选择性地扩散到上层中而形成的发光二极管以单列排列，在上层的每个块中至少有两个发光二极管。每个块具有驱动块中的发光二极管的块电极。这排发光二极管与穿过隔离通道的多条共用线并联。每个共享线路连接到不同块中的多个发光二极管。

5. 发明授权

US06190935B1 Low-cost, high-density light-emitting-diode array and fabrication method thereof 有权
公开(公告)号：US06190935B1
公开(公告)日：2001-02-20
申请号：US09359789
申请日：1999-07-26
申请人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
发明人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
IPC分类号： H01L3300
CPC分类号： H01L27/153
摘要： A light-emitting-diode array is formed on a substrate having an upper layer of a semiconducting material and a lower layer of an insulating or semi-insulating material. The upper layer is divided into blocks by isolation channels that cut completely through the upper layer. The light-emitting diodes, which are formed by selective diffusion of an impurity into the upper layer, are arranged in a single row, with at least two light-emitting diodes in each block of the upper layer. Each block has a block electrode that drives the light-emitting diodes in the block. The row of light-emitting diodes is paralleled by a number of shared lines which cross the isolation channels. Each shared line is coupled to a plurality of light-emitting diodes in different blocks.

6. 发明授权

US5869221A Method of fabricating an LED array 失效
标题翻译：制造LED阵列的方法
公开(公告)号：US5869221A
公开(公告)日：1999-02-09
申请号：US997735
申请日：1997-12-24
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
IPC分类号： H01L27/15 , G03F9/00
CPC分类号： H01L27/153
摘要： A method of fabricating an LED array includes forming a first insulating film composed of aluminum oxide on a semiconductor substrate of a first conductive type; patterning the first insulating film by photolithography to form a plurality of first windows; diffusing an impurity of a second conductive type through the plurality of first windows into the first insulating film, thereby forming a plurality of diffusion regions of the second conductive type below the plurality of first windows; forming a second insulating film on the first insulating film and the plurality of first windows; patterning the second insulating film by photolithography to-remove the second insulating film from the plurality of first windows, using an etchant that does not etch the first insulating film; forming a metal film on the second insulating film and the plurality of first windows; and patterning the metal film by photolithography to form a plurality of electrodes which make electrical contact with respective diffusion regions.
摘要翻译：制造LED阵列的方法包括在第一导电类型的半导体衬底上形成由氧化铝构成的第一绝缘膜; 通过光刻图案化第一绝缘膜以形成多个第一窗口; 将通过所述多个第一窗口的第二导电类型的杂质扩散到所述第一绝缘膜中，从而在所述多个第一窗口的下方形成所述第二导电类型的多个扩散区域; 在所述第一绝缘膜和所述多个第一窗口上形成第二绝缘膜; 使用不蚀刻第一绝缘膜的蚀刻剂通过光刻图案化第二绝缘膜以从多个第一窗口去除第二绝缘膜; 在所述第二绝缘膜和所述多个第一窗口上形成金属膜; 并通过光刻法形成金属膜以形成与各个扩散区电接触的多个电极。

7. 发明授权

US5821567A High-resolution light-sensing and light-emitting diode array 失效
标题翻译：高分辨率光感应和发光二极管阵列
公开(公告)号：US5821567A
公开(公告)日：1998-10-13
申请号：US763860
申请日：1996-12-11
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
IPC分类号： H01L27/144 , H01L27/146 , H01L27/15 , H01L31/0224 , H01L31/10 , H01L31/12 , H01L33/00
CPC分类号： H01L31/022408 , H01L27/1446 , H01L27/14601 , H01L27/14643 , H01L27/14683 , H01L27/153 , H01L31/125 , H01L33/0008 , H01L27/156
摘要： A light-sensing/emitting diode array chip has impurity diffusion regions with a depth of at least 0.5 .mu.m but not more than 2 .mu.m in a semiconductor substrate. Each impurity diffusion region is preferably divided into a first region, used for emitting or sensing light, and a wider second region, used for electrode contact. The second regions are located on alternate sides of the array line, permitting a small array pitch to be combined with a large contact area. In a wafer process for fabrication of the chips, a diffusion mask has both windows defining the impurity diffusion regions, and dicing line marks. The dicing line marks are narrowed where they pass adjacent to the windows at the ends of the chip. In the electrode fabrication step, a photomask with an enlarged pattern is used, to allow for misalignment with the diffusion mask.
摘要翻译：光敏/发光二极管阵列芯片在半导体衬底中具有深度至少为0.5μm但不大于2μm的杂质扩散区域。每个杂质扩散区优选分为用于发射或感测光的第一区域和用于电极接触的较宽的第二区域。第二区域位于阵列线的另一侧，允许小的阵列间距与大的接触面积组合。在用于制造芯片的晶片工艺中，扩散掩模具有限定杂质扩散区域的两个窗口和切割线标记。切割线标记在其靠近芯片端部的窗口的地方变窄。在电极制造步骤中，使用具有放大图案的光掩模，以允许与扩散掩模的未对准。

8. 发明授权

US5733689A Led array fabrication process with improved unformity 失效
标题翻译： Led阵列制造工艺具有改进的不整合性
公开(公告)号：US5733689A
公开(公告)日：1998-03-31
申请号：US611410
申请日：1996-03-06
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
IPC分类号： H01L27/15 , G03F9/00
CPC分类号： H01L27/153
摘要： A method of fabricating an LED array includes (a) forming a first insulating film composed of aluminum oxide on a semiconductor substrate of a first conductive type; (b) patterning the first insulating film by photolithography to form a plurality of first windows; (c) diffusing an impurity of a second conductive type through the plurality of first windows into the first insulating film, thereby forming a plurality of diffusion regions of the second conductive type below the plurality of first windows; (d) forming a second insulating film on the first insulating film and the plurality of first windows; (e) patterning the second insulating film by photolithography to remove the second insulating film from the plurality of first windows, using an etchant that does not etch the first insulating film; (f) forming a metal film on the second insulating film and the plurality of first windows; and (g) patterning the metal film by photolithography to form a plurality of electrodes which make electrical contact with respective diffusion regions.
摘要翻译：制造LED阵列的方法包括：（a）在第一导电类型的半导体衬底上形成由氧化铝构成的第一绝缘膜; （b）通过光刻图案化所述第一绝缘膜以形成多个第一窗口; （c）将通过所述多个第一窗口的第二导电类型的杂质扩散到所述第一绝缘膜中，从而在所述多个第一窗口下方形成所述第二导电类型的多个扩散区域; （d）在所述第一绝缘膜和所述多个第一窗口上形成第二绝缘膜; （e）使用不蚀刻第一绝缘膜的蚀刻剂通过光刻对第二绝缘膜图案化以从多个第一窗口去除第二绝缘膜; （f）在所述第二绝缘膜和所述多个第一窗口上形成金属膜; 和（g）通过光刻法形成金属膜以形成与各个扩散区电接触的多个电极。

9. 发明授权

US06222208B1 Light-emitting diode and light-emitting diode array 失效
标题翻译：发光二极管和发光二极管阵列
公开(公告)号：US06222208B1
公开(公告)日：2001-04-24
申请号：US09089093
申请日：1998-06-02
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
IPC分类号： H01L3300
CPC分类号： H01L33/30 , H01L27/153 , H01L33/025 , H01L33/24
摘要： A light-emitting diode includes a first semiconductor epitaxial layer of a first conduction type, a second semiconductor epitaxial layer of the first conduction type laminated upon the first semiconductor epitaxial layer and having an energy band gap greater than that of the first semiconductor epitaxial layer, and an area of impurities formed within the first semiconductor epitaxial layer and the second semiconductor epitaxial layer by doping impurity of a second conduction type from the side of the second semiconductor epitaxial layer. A front of the diode is located within the first semiconductor epitaxial layer.
摘要翻译：发光二极管包括第一导电类型的第一半导体外延层，第一导电类型的第二半导体外延层，层压在第一半导体外延层上并具有大于第一半导体外延层的能带隙的能带隙，以及通过从第二半导体外延层的侧面掺杂第二导电类型的杂质而形成在第一半导体外延层和第二半导体外延层内的杂质区域。二极管的前部位于第一半导体外延层内。

10. 发明授权

US06180961B2 Light emitting semiconductor device with stacked structure 失效
标题翻译：具有层叠结构的发光半导体器件
公开(公告)号：US06180961B2
公开(公告)日：2001-01-30
申请号：US09093609
申请日：1998-06-09
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
IPC分类号： H01L3300
CPC分类号： H01L33/025 , H01L27/153 , H01L33/24
摘要： A high-density semiconductor device and semiconductor device array exhibiting high light emission efficiency which can be mass-produced at low cost with high yield is provided. An LED array comprises a structure wherein an n-type GaAs buffer layer 102 is formed on an n-type GaAs substrate 101, on which are then stacked an n-type AlzGa1−zAs layer 103, an n-type AlyGa1−yAs layer 104, a semi-insulating AlxGa1−xAs layer 105, and a semi-insulating GaAs layer 106. The energy band gaps of the AlzGa1−zAs layer 103 and AlxGa1−xAs layer 105 are at least larger than the energy band gap of the AlyGa1−yAs layer 104. A pn junction is formed by selective diffusion, having a diffusion front in the semiconductor layer having the smaller energy band gap sandwiched between the semiconductor layers having the larger energy band gaps. The outermost layer forming ohmic contact is made a p-type GaAs region formed by zinc diffusion in a semi-insulating GaAs layer.
摘要翻译：提供了一种可以以低成本，高产率批量生产的高发光效率的高密度半导体器件和半导体器件阵列。 LED阵列包括其中n型GaAs缓冲层102形成在n型GaAs衬底101上的结构，然后将n型GaAs缓冲层102层叠在n型AlzGa1-zAs层103，n型AllyGa1-yAs层104 ，半绝缘Al x Ga 1-x As层105和半绝缘GaAs层106.AlzGa1-zAs层103和AlxGa1-xAs层105的能带隙至少大于Al y Ga 1-x As层105的能带隙。通过选择性扩散形成pn结，在半导体层中具有在具有较大能带间隙的半导体层之间具有较小能带隙的扩散前沿。形成欧姆接触的最外层是在半绝缘GaAs层中通过锌扩散形成的p型GaAs区。

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