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    • 4. 发明授权
    • Pixellated devices such as active matrix liquid crystal displays and methods of manufacturing such
    • 像素化器件如有源矩阵液晶显示器及其制造方法
    • US06773941B2
    • 2004-08-10
    • US10055377
    • 2002-01-22
    • Ian D. FrenchPieter J. Van der Zaag
    • Ian D. FrenchPieter J. Van der Zaag
    • H01L2100
    • H01L29/66765G02F1/13439G02F1/136286H01L27/124H01L27/1248H01L27/1288
    • A method for use in the fabrication of active plates for pixilated devices, such as active matrix liquid crystal displays, having pixel electrodes (38) and associated address lines (32) formed from a layer of transparent conductive material (53) through which the conductivity of the address lines is improved. The transparent conductive layer (53) and a metal layer (54) are deposited in succession and followed by a shielding layer (60), e.g. of photoresist, which is patterned into a configuration of regions (67,68,69) corresponding to the required pixel dielectrodes and address lines with a property of the layer at these respective regions being different. This enables the regions of this layer corresponding to the pixel electrodes to be selectively etched away, thereby allowing the metal at these regions to be selectively removed while leaving metal at the address lines. The method simplifies the production of low mask mount TFT active plates with improved address line conductivity.
    • 一种用于制造用于诸如有源矩阵液晶显示器的像素化器件的有源板的方法,所述有源矩阵液晶显示器具有由透明导电材料层(53)形成的像素电极(38)和相关联的地址线(32),通过该透明导电材料 的地址线被改善。 透明导电层(53)和金属层(54)依次沉积,然后是屏蔽层(60)。 的光刻胶,其被图案化成对应于所需像素电介质的区域(67,68,69)的配置,并且具有在这些相应区域处的层的性质不同的地址线。 这使得能够选择性地蚀刻掉与像素电极相对应的该层的区域,从而允许在这些区域处的金属被选择性地去除,同时在地址线处留下金属。 该方法简化了具有改进的地址线电导率的低掩模安装TFT有源板的生产。
    • 5. 发明授权
    • Pixellated device with the metal layer atop the address lines
    • 像素化设备,金属层位于地址线顶部
    • US07187422B2
    • 2007-03-06
    • US10853349
    • 2004-05-25
    • Ian D. FrenchPieter J. Van der Zaag
    • Ian D. FrenchPieter J. Van der Zaag
    • G02F1/136
    • H01L29/66765G02F1/13439G02F1/136286H01L27/124H01L27/1248H01L27/1288
    • A method for use in the fabrication of active plates for pixellated devices, such as active matrix liquid crystal displays, having pixel electrodes (38) and associated address lines (32) formed from a layer of transparent conductive material (53) through which the conductivity of the address lines is improved. The transparent conductive layer (53) and a metal layer (54) are deposited in succession and followed by a shielding layer (60), e.g. of photoresist, which is patterned into a configuration of regions (67,68,69) corresponding to the required pixel dielectrodes and address lines with a property of the layer at these respective regions being different. This enables the regions of this layer corresponding to the pixel electrodes to be selectively etched away, thereby allowing the metal at these regions to be selectively removed while leaving metal at the address lines.The method simplifies the production of low mask mount TFT active plates with improved address line conductivity.
    • 一种用于制造用于像素化器件(例如有源矩阵液晶显示器)的有源板的方法,其具有由透明导电材料(53)层形成的像素电极(38)和相关联的地址线(32),通过该透明导电材料 的地址线被改善。 透明导电层(53)和金属层(54)依次沉积,然后是屏蔽层(60)。 的光刻胶,其被图案化成对应于所需像素电介质的区域(67,68,69)的配置,并且具有在这些相应区域处的层的性质不同的地址线。 这使得能够选择性地蚀刻掉与像素电极相对应的该层的区域,从而允许在这些区域处的金属被选择性地去除,同时在地址线处留下金属。 该方法简化了具有改进的地址线电导率的低掩模安装TFT有源板的生产。
    • 6. 发明授权
    • Method of improving the conductivity of transparent conductor lines
    • 提高透明导线电导率的方法
    • US06750131B2
    • 2004-06-15
    • US10055356
    • 2002-01-22
    • Ian D. FrenchPieter J. Van der ZaagDaan L. De Kubber
    • Ian D. FrenchPieter J. Van der ZaagDaan L. De Kubber
    • H01L2144
    • G02F1/136286G02F2001/13629G02F2001/136295
    • A method of improving the electrical conductivity of transparent conducting lines (32) carried on a substrate (46), particularly address lines on the active plate for a pixellated device such as an active matrix liquid crystal display or the like fabricated using a low mask count process, involves forming the lines on the substrate from a deposited layer of transparent conducting material (53), e.g. ITO, and provided on their upper surface with a covering layer (72′) extending from at least one end (75) and partially covering the surface, and then performing an electroplating operation to plate the lines (80) with a plating potential being applied at that end. The covering layer (72′) assists in achieving a more uniform plated layer (80) along the length of the line. The covering layer preferably comprises photoresist defined by selective patterning and partial etching of a deposited photoresist layer (54) used for patterning the transparent layer (53). In a pixellated device, pixel electrodes (38) are also defined from the transparent layer.
    • 一种提高承载在基板(46)上的透明导电线(32)的导电性的方法,特别是使用低掩模计数制造的诸如有源矩阵液晶显示器等像素化器件的有源板上的地址线 包括在透明导电材料(53)的沉积层上在衬底上形成线,例如, ITO,并且在其上表面上设置有从至少一个端部(75)延伸并部分地覆盖该表面的覆盖层(72'),然后进行电镀操作以使施加电镀电位的线(80) 在那个时候 覆盖层(72')有助于沿着线的长度实现更均匀的镀层(80)。 覆盖层优选地包括通过选择性图案化和部分蚀刻用于图案化透明层(53)的沉积的光致抗蚀剂层(54)限定的光致抗蚀剂。 在像素化器件中,像素电极(38)也从透明层定义。
    • 8. 发明授权
    • Method of fabricating a thin film transistor
    • 制造薄膜晶体管的方法
    • US5981317A
    • 1999-11-09
    • US986555
    • 1997-12-08
    • Ian D. FrenchMartin J. Powell
    • Ian D. FrenchMartin J. Powell
    • H01L29/786G02F1/1368H01L21/336H01L29/45H01L29/49
    • H01L29/66757H01L29/458H01L29/4908G02F1/1368
    • In the manufacture of a flat panel display or other large-area electronics device, a self-aligned thin-film transistor (TFT) is formed with source and drain silicide parts (31,32) adjacent an insulated gate structure (25,21,22) on a silicon film (20) which provides a transistor body (20a) comprising a channel area (20b) of the transistor. The transistor has its source and drain electrode pattern (11,12) extending under the silicon film (20). The insulated gate structure (25,21,22) is formed as a conductive gate (25) on an insulating film (21,22) which is patterned together with the conductive gate (25). A silicide-forming metal (30) is deposited over the insulated gate structure (25,21,22) and over exposed, adjacent areas (20c and 20d) of the silicon film, and the metal is reacted to form the silicide (31,32) with these adjacent areas of the silicon film. The unreacted metal is removed from the insulated gate structure (25,21,22) by means of a selective etchant to leave the source and drain silicide parts (31 and 32) self-aligned with the conductive gate (25). An electrical connection (n+; 31,32) is formed across the thickness of the silicon film (20) between the source and drain electrode pattern (11,12) and the respective source and drain silicide parts (31 and 32).
    • 在平板显示器或其他大面积电子器件的制造中,自对准薄膜晶体管(TFT)形成有源极和漏极硅化物部分(31,32),邻近绝缘栅极结构(25,21, 22),其提供包括晶体管的沟道区域(20b)的晶体管体(20a)的硅膜(20)上。 晶体管具有在硅膜(20)下方延伸的源极和漏极电极图案(11,12)。 绝缘栅极结构(25,21,22)形成为与导电栅极(25)一起构图的绝缘膜(21,22)上的导电栅极(25)。 硅化物形成金属(30)沉积在绝缘栅极结构(25,21,22)上并暴露在硅膜的相邻区域(20c和20d)之上,金属反应形成硅化物(31, 32)与硅膜的这些相邻区域。 通过选择性蚀刻剂从绝缘栅极结构(25,21,22)去除未反应的金属,以使源极和漏极硅化物部分(31和32)与导电栅极(25)自对准。 在源极和漏极电极图案(11,12)和相应的源极和漏极硅化物部分(31和32)之间跨越硅膜(20)的厚度形成电连接(n +; 31,32)。
    • 9. 发明授权
    • Colour active matrix displays
    • 彩色有源矩阵显示
    • US08027000B2
    • 2011-09-27
    • US12829477
    • 2010-07-02
    • Ian D. FrenchMark J. ChildsDavid A. FishJason R. Hector
    • Ian D. FrenchMark J. ChildsDavid A. FishJason R. Hector
    • G02F1/1335
    • H01L27/1266G02F1/133305G02F1/133516G02F1/1368G02F2001/133567H01L27/1214H01L27/322
    • A method of manufacturing a color active matrix display device comprises forming islands over a rigid carrier substrate, forming a plastic substrate over the rigid carrier substrate, forming an array of pixel circuits over the plastic substrate and forming a display layer over the array of pixel circuits. The rigid carrier substrate is then released from the plastic substrate and the plastic substrate then has channels defined by the islands. These are filled to define color filter portions. The formation of a plastic substrate on a rigid carrier, with the use of a subsequent lift off process, enables the circuit arrays to be made on very thin plastic sheets. The color filters can then be made on the outside of the LC cell. Depressions are formed in the plastic substrate registered to the circuit array, and these are filled in with color filter material, for example by ink jet printing.
    • 彩色有源矩阵显示装置的制造方法包括在刚性载体基板上形成岛,在刚性载体基板上形成塑料基板,在塑料基板上形成像素电路阵列,并在像素电路阵列上形成显示层 。 刚性载体衬底然后从塑料衬底释放,塑料衬底则具有由岛形成的通道。 这些填充以定义滤色器部分。 使用随后的剥离工艺在刚性载体上形成塑料基板使得电路阵列能够在非常薄的塑料片上制成。 然后可以在LC单元的外部制造滤色器。 在注入到电路阵列的塑料基板中形成凹陷,并且通过例如喷墨印刷填充有滤色器材料。
    • 10. 发明授权
    • Active matrix pixel drive circuit for oled display
    • 有源矩阵像素驱动电路,用于oled显示
    • US07427833B2
    • 2008-09-23
    • US10559054
    • 2004-05-28
    • David A. FishSteven C. DeaneJason R. HectorIan D. French
    • David A. FishSteven C. DeaneJason R. HectorIan D. French
    • H01J1/62H05B33/00G09G3/10
    • G09G3/3233G09G2300/0819G09G2300/0852G09G2300/0876G09G2310/0251G09G2320/029G09G2320/043H01L27/3265
    • A display device has a plurality of pixels, each having a current-driven display element coupled between a first conductive layer and a second conductive layer, the second conductive layer being coupled to a current supply via a switchable device having a thin film component on a first area of a substrate. Each pixel has a first capacitive device having a first capacitor plate on a second area of the substrate, the first capacitor plate conductively coupled to the thin film component, a second capacitor plate and a first insulating layer between the first capacitor plate and the second capacitor plate. On top of the first capacitive device is a second capacitive device sharing the second capacitor plate, the second capacitive device including a third capacitor plate sharing the second conductive layer, and a second insulating layer between the second capacitor plate and the third capacitor plate.
    • 显示装置具有多个像素,每个像素具有耦合在第一导电层和第二导电层之间的电流驱动显示元件,所述第二导电层经由可切换装置耦合到电流源,所述可切换装置具有薄膜部件 底物的第一区域。 每个像素具有第一电容器件,其具有在衬底的第二区域上的第一电容器板,第一电容器板与第一电容器板和第二电容器之间的导电耦合到薄膜部件,第二电容器板和第一绝缘层 盘子。 在第一电容性装置的顶部是共享第二电容器板的第二电容性装置,第二电容性装置包括共享第二导电层的第三电容器板和第二电容器板和第三电容器板之间的第二绝缘层。