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1. 发明申请

US20220120561A1 X-RAY REFLECTOMETRY APPARATUS AND METHOD THEREOF FOR MEASURING THREE DIMENSIONAL NANOSTRUCTURES ON FLAT SUBSTRATE 有权
公开(公告)号：US20220120561A1
公开(公告)日：2022-04-21
申请号：US17532767
申请日：2021-11-22
申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
发明人： Chun-Ting LIU , Wen-Li WU , Bo-Ching HE , Guo-Dung CHEN , Sheng-Hsun WU , Wei-En FU
IPC分类号： G01B15/08
摘要： This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes. In one embodiment, the incident angle of the long-wavelength focused X-ray is ≥24°, and the sample area is ≤25 μm×25 μm.

2. 发明公开

US20240102950A1 METHOD FOR DETERMINING PARAMETERS OF THREE DIMENSIONAL NANOSTRUCTURE AND APPARATUS APPLYING THE SAME 审中-公开
公开(公告)号：US20240102950A1
公开(公告)日：2024-03-28
申请号：US18374289
申请日：2023-09-28
申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
发明人： Chun-Ting LIU , Po-Ching HE , Wei-En FU , Chun-Yu LIU
IPC分类号： G01N23/201 , G01B15/04 , G01N23/2273 , H01L21/66
CPC分类号： G01N23/201 , G01B15/04 , G01N23/2273 , H01L22/12 , G01N2223/052 , G01N2223/1016
摘要： A method for determining parameters of nanostructures, wherein the method includes steps as follows: Firstly, an X-ray reflection intensity measurement curve of a nanostructure to be tested is obtained by radiating the nanostructure to be tested with X-ray. The X-ray reflection intensity measurement curve is compared with an X-ray reflection intensity standard curve to obtain a comparison result. Subsequently, at least one parameter existing in the nanostructure to be tested is determined according to the comparison result.

3. 发明申请

US20210199428A1 DEVICE AND METHOD APPLICABLE FOR MEASURING ULTRATHIN THICKNESS OF FILM ON SUBSTRATE 有权
公开(公告)号：US20210199428A1
公开(公告)日：2021-07-01
申请号：US16730236
申请日：2019-12-30
申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
发明人： Chun-Ting LIU , Han-Yu CHANG , Bo-Ching HE , Guo-Dung CHEN , Wen-Li WU , Wei-En FU
IPC分类号： G01B15/02
摘要： The present disclosure relates to a device and a method for measuring a thickness of an ultrathin film on a solid substrate. The thickness of the target ultrathin film is measured from the intensity of the fluorescence converted by the substrate and leaking and tunneling through the target ultrathin film at low detection angle. The fluorescence generated from the substrate has sufficient and stable high intensity, and therefore can provide fluorescence signal strong enough to make the measurement performed rapidly and precisely. The detection angle is small, and therefore the noise ratio is low, and efficiency of thickness measurement according to the method disclosed herein is high. The thickness measurement method can be applied into In-line product measurement without using standard sample, and therefore the thickness of the product can be measured rapidly and efficiently.

4. 发明申请

US20150200381A1 ORGANIC LIGHT EMITTING DEVICE 审中-公开
标题翻译：有机发光装置
公开(公告)号：US20150200381A1
公开(公告)日：2015-07-16
申请号：US14445672
申请日：2014-07-29
申请人： Industrial Technology Research Institute
发明人： Chun-Ting LIU , Wen-Yung YEH , Hsi-Hsuan YEN
IPC分类号： H01L51/52 , H01L51/50
CPC分类号： H01L51/5262 , H01L51/5012 , H01L51/5072 , H01L51/5206 , H01L51/5221 , H01L51/5268 , H01L51/5275 , H01L2251/558
摘要： An organic light emitting device (OLED) is provided, comprising a first electrode and a second electrode disposed oppositely, and an organic light emitting (EL) layer formed between the first electrode and the second electrode, wherein the EL layer comprises at least one organic light emitting material. In one embodiment, the EL layer is a dipole controlled organic light emitting layer, and the longest axes of organic molecules of the organic light emitting material or exciton dipole moments of the organic molecules are anisotropically oriented, such as arranged as an anisotropic array, for decreasing the possibility of exciton energy directly coupled into the cathode. In an alternative embodiment, a periodic array of nano-grating structure is formed between the first and second electrodes for decreasing the possibility of propagation of the TM polarized light. Accordingly, the light efficiency of the OLED is significantly improved.
摘要翻译：提供了一种有机发光器件（OLED），包括相对设置的第一电极和第二电极以及形成在第一电极和第二电极之间的有机发光（EL）层，其中EL层包括至少一种有机发光发光材料。在一个实施例中，EL层是偶极控制的有机发光层，有机发光材料的有机分子的最长轴或有机分子的激子偶极矩的各向异性取向，例如排列为各向异性阵列，用于减少直接耦合到阴极中的激子能量的可能性。在替代实施例中，在第一和第二电极之间形成纳米光栅结构的周期性阵列，以减少TM偏振光的传播的可能性。因此，OLED的光效率显着提高。

5. 发明公开

US20240094148A1 X-RAY REFLECTOMETRY APPARATUS AND METHOD THEREOF FOR MEASURING THREE DIMENSIONAL NANOSTRUCTURES ON FLAT SUBSTRATE 审中-公开
公开(公告)号：US20240094148A1
公开(公告)日：2024-03-21
申请号：US17994858
申请日：2022-11-28
申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
发明人： Bo-Ching HE , Chun-Ting LIU , Wei-En FU , Wen-Li WU
IPC分类号： G01N23/20008 , G01B15/04
CPC分类号： G01N23/20008 , G01B15/04 , G01N2223/052 , G01N2223/3303
摘要： This disclosure relates to an X-ray reflectometry apparatus and a method for measuring a three-dimensional nanostructure on a flat substrate. The X-ray reflectometry apparatus comprises an X-ray source, an X-ray reflector, a 2-dimensional X-ray detector, and a two-axis moving device. The X-ray source is for emitting X-ray. The X-ray reflector is configured for reflecting the X-ray onto a sample surface. The 2-dimensional X-ray detector is configured to collect a reflecting X-ray signal from the sample surface. The two-axis moving device is configured to control two-axis directions of the 2-dimensional X-ray detector to move on at least one of x-axis and z-axis with a formula concerning an incident angle of the X-ray with respect to the sample surface for collecting the reflecting X-ray signal.

6. 发明申请

US20210109042A1 X-RAY REFLECTOMETRY APPARATUS AND METHOD THEREOF FOR MEASURING THREE DIMENSIONAL NANOSTRUCTURES ON FLAT SUBSTRATE 有权
公开(公告)号：US20210109042A1
公开(公告)日：2021-04-15
申请号：US17037115
申请日：2020-09-29
申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
发明人： Chun-Ting LIU , Wen-Li WU , Bo-Ching HE , Guo-Dung CHEN , Sheng-Hsun WU , Wei-En FU
IPC分类号： G01N23/201 , G01N23/20008
摘要： This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes.

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