会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Silicon thin film solar cell
    • 硅薄膜太阳能电池
    • US09224886B2
    • 2015-12-29
    • US13012428
    • 2011-01-24
    • Suntae HwangSehwon AhnSeungyoon Lee
    • Suntae HwangSehwon AhnSeungyoon Lee
    • H01L31/00H01L31/0224H01L31/056
    • H01L31/022425H01L31/056Y02E10/52
    • A silicon thin film solar cell is discussed. The silicon thin film solar cell includes a substrate on which light is incident, a first electrode positioned on the substrate at a surface opposite a surface of the substrate on which the solar light is incident, a second electrode positioned on the first electrode, at least one photoelectric conversion unit positioned between the first electrode and the second electrode, and a back reflection layer positioned between the at least one photoelectric conversion unit and the second electrode. The back reflection layer includes a first reflection layer formed of a material having an absorption coefficient equal to or less than 400 cm−1 with respect to light having a wavelength equal to or greater than 700 nm.
    • 讨论了硅薄膜太阳能电池。 硅薄膜太阳能电池包括入射光的基板,位于基板上的与太阳光入射的基板相对的表面的第一电极,至少位于第一电极上的第二电极 位于第一电极和第二电极之间的一个光电转换单元和位于至少一个光电转换单元和第二电极之间的背反射层。 背反射层包括相对于具有等于或大于700nm的波长的光,具有等于或小于400cm -1的吸收系数的材料形成的第一反射层。
    • 6. 发明申请
    • SILICON THIN FILM SOLAR CELL
    • 硅薄膜太阳能电池
    • US20110139232A1
    • 2011-06-16
    • US13012428
    • 2011-01-24
    • Suntae HWANGSehwon AhnSeungyoon Lee
    • Suntae HWANGSehwon AhnSeungyoon Lee
    • H01L31/0232H01L31/06
    • H01L31/022425H01L31/056Y02E10/52
    • A silicon thin film solar cell is discussed. The silicon thin film solar cell includes a substrate on which light is incident, a first electrode positioned on the substrate at a surface opposite a surface of the substrate on which the solar light is incident, a second electrode positioned on the first electrode, at least one photoelectric conversion unit positioned between the first electrode and the second electrode, and a back reflection layer positioned between the at least one photoelectric conversion unit and the second electrode. The back reflection layer includes a first reflection layer formed of a material having an absorption coefficient equal to or less than 400 cm−1 with respect to light having a wavelength equal to or greater than 700 nm.
    • 讨论了硅薄膜太阳能电池。 硅薄膜太阳能电池包括入射光的基板,位于基板上的与太阳光入射的基板相对的表面的第一电极,至少位于第一电极上的第二电极 位于第一电极和第二电极之间的一个光电转换单元和位于至少一个光电转换单元和第二电极之间的背反射层。 背反射层包括相对于具有等于或大于700nm的波长的光,具有等于或小于400cm -1的吸收系数的材料形成的第一反射层。