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1. 发明申请

US20080041308A1 SUBSTRATE TREATMENT APPARATUS AND CLEANING METHOD 审中-公开
标题翻译：基板处理装置和清洁方法
公开(公告)号：US20080041308A1
公开(公告)日：2008-02-21
申请号：US11830156
申请日：2007-07-30
申请人： Hyung-Sik HONG , Ki-Sun KIM , No-Hyun HUH , Jong-Myeong LEE
发明人： Hyung-Sik HONG , Ki-Sun KIM , No-Hyun HUH , Jong-Myeong LEE
IPC分类号： C23C16/00 , B08B5/00
CPC分类号： C23C16/4405 , B08B7/0035 , H01J37/32091 , H01J37/32357 , H01J37/3244 , H01J37/32862 , H01J2237/2001
摘要： A substrate treating apparatus and related cleaning method are disclosed. The apparatus includes a stage heater disposed in the reaction chamber, serving as a first electrode during the generation of in-situ plasma, and supporting a substrate, a shower head disposed in the reaction chamber opposing the stage heater, serving as a second electrode during the generation of the in-situ plasma, and supplying a reaction gas into the reaction chamber, a remote plasma generator disposed external to the reaction chamber and configured to supply a cleaning gas to the reaction chamber following activation of the cleaning gas, and a gas transmitter disposed between the reaction chamber and the remote plasma generator and configured to transmit the reaction gas and the cleaning gas to the shower head.
摘要翻译：公开了一种基板处理装置及其相关的清洁方法。该装置包括设置在反应室中的级加热器，用于在原位等离子体生成期间作为第一电极，并且支撑基板，设置在与级加热器相对的反应室中的淋浴喷头，用作第二电极产生原位等离子体，并将反应气体供应到反应室中;远程等离子体发生器，其设置在反应室外部并且构造成在清洁气体活化后向反应室供应清洁气体;气体发射器设置在反应室和远程等离子体发生器之间，并被配置为将反应气体和清洁气体传输到淋浴头。

2. 发明申请

US20080054194A1 ION IMPLANTER WITH ETCH PREVENTION MEMBER(S) 有权
标题翻译：离子植入物与防腐剂成员（S）
公开(公告)号：US20080054194A1
公开(公告)日：2008-03-06
申请号：US11845187
申请日：2007-08-27
申请人： Il-Kyoung KIM , No-Hyun HUH , Tae-Won LEE , Sung-Wook PARK , Ki-Young YUN , Won-Soon LEE , Young-Ha YOON , Tae-Sub IM
发明人： Il-Kyoung KIM , No-Hyun HUH , Tae-Won LEE , Sung-Wook PARK , Ki-Young YUN , Won-Soon LEE , Young-Ha YOON , Tae-Sub IM
IPC分类号： H01J37/08
CPC分类号： H01J37/32495 , H01J37/32082 , H01J37/32412
摘要： An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.
摘要翻译：公开了将离子掺杂到衬底中的装置和方法，并且包括具有进行离子注入工艺的内部空间的处理室，位于处理室中的支撑单元，支撑衬底并与第一电力电连接源，用于产生高频脉冲，导电单元与支撑单元分离，使得在支撑单元和导电单元之间产生与离子注入工艺相关联的等离子体，其中导电单元包括防止导电单元被用于产生等离子体的源气体进行蚀刻，以及电连接到第二电源并产生施加到导电单元的射频（RF）功率的电源端口。

3. 发明申请

US20080072925A1 WAFER CLEANING APPARATUS 审中-公开
公开(公告)号：US20080072925A1
公开(公告)日：2008-03-27
申请号：US11834549
申请日：2007-08-06
申请人： Mi-Seok PARK , Young-Min KWON , Jung-Hyun CHO , No-Hyun HUH , Soon-Hwan SUNG
发明人： Mi-Seok PARK , Young-Min KWON , Jung-Hyun CHO , No-Hyun HUH , Soon-Hwan SUNG
IPC分类号： B08B6/00
CPC分类号： H01L21/68728 , H01L21/67051 , H01L21/67103
摘要： A wafer cleaning apparatus preferably includes a first plate configured to hold a wafer. The first plate may have a first supply pipe configured to supply a cleaning solution to a first surface of the wafer. A second plate preferably has a second supply pipe configured to supply the cleaning solution to a second surface of the wafer. A megasonic vibrator can be provided in the second plate. A plurality of heaters are preferably arranged in communication with one or both of the first and second plates. The plurality of heaters can be configured to heat the cleaning solution supplied to the first and second surfaces of the wafer. Using a wafer cleaning apparatus constructed according to principles of the present invention, a temperature difference of a cleaning solution can be reduced. An etch rate difference caused by the cleaning solution temperature difference can also be reduced to achieve a more uniform cleaning efficiency.
摘要翻译：晶片清洁装置优选地包括被配置为保持晶片的第一板。第一板可以具有构造成将清洁溶液供应到晶片的第一表面的第一供应管。第二板优选地具有构造成将清洁溶液供应到晶片的第二表面的第二供应管。可以在第二板中设置兆声振动器。多个加热器优选地布置成与第一和第二板中的一个或两个连通。多个加热器可以被配置为加热供应到晶片的第一和第二表面的清洁溶液。使用根据本发明的原理构造的晶片清洁装置，可以降低清洗溶液的温度差。由清洗液温度差引起的蚀刻速率差也可以减小，以达到更均匀的清洗效率。

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