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1. 发明授权

US07236697B2 Device for driving light emitting diode for flash of camera 失效
标题翻译：用于驱动相机闪光灯的发光二极管的装置
公开(公告)号：US07236697B2
公开(公告)日：2007-06-26
申请号：US10935360
申请日：2004-09-08
申请人： Hyung Suk Kim , Yong Chun Kim
发明人： Hyung Suk Kim , Yong Chun Kim
IPC分类号： G03B15/03 , H04N5/222
CPC分类号： H04N5/2256 , G03B15/05 , G03B2215/0567 , H04N5/23241
摘要： Disclosed herein is a device for driving a LED for a flash of a camera, such as a digital camera or a camera of a mobile phone, which is capable of driving the LED in two modes to reduce power consumption. The LED drive device comprises the LED, a continuous low current driver for continuously supplying current which is lower than or equal to rated current of the LED to the LED, a high-current pulse driver for supplying current which is higher than the rated current of the LED to the LED for a predetermined period of time, and a mode selector for selecting one of the continuous low current driver and the high-current pulse driver to drive the LED. According to the present invention, it is possible to prevent unnecessary power consumption and deterioration of reliability of the LED, and obtain an image of brighter picture quality.
摘要翻译：这里公开了一种用于驱动诸如数字照相机或移动电话的照相机的照相机的闪光灯的LED的装置，其能够以两种模式驱动LED以降低功耗。 LED驱动装置包括LED，连续的低电流驱动器，用于连续向LED提供低于或等于LED的额定电流的电流;高电流脉冲驱动器，用于提供高于LED的额定电流的电流 LED到LED预定时间段，以及模式选择器，用于选择连续低电流驱动器和大电流脉冲驱动器之一来驱动LED。根据本发明，可以防止不必要的电力消耗和LED的可靠性的劣化，并且获得更亮的图像质量的图像。

2. 发明授权

US08410497B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08410497B2
公开(公告)日：2013-04-02
申请号：US12338438
申请日：2008-12-18
申请人： Sang Won Kang , Seong Ju Park , Joo Young Cho , Il Kyu Park , Yong Chun Kim , Dong Joon Kim , Jeong Tak Oh , Je Won Kim
发明人： Sang Won Kang , Seong Ju Park , Joo Young Cho , Il Kyu Park , Yong Chun Kim , Dong Joon Kim , Jeong Tak Oh , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/14 , H01L33/32 , H01L33/387 , H01L33/40 , H01L33/641
摘要： There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.
摘要翻译：提供了一种半导体发光器件，其可以容易地散热，提高电流扩散效率，并且通过阻止半导体层生长时发生的位错从而降低可靠性，从而减少缺陷。一种半导体发光器件，包括基板，依次层叠有n型半导体层，有源层和p型半导体层的发光结构，以及形成在所述n型半导体层上的n型电极和p型电极 n型半导体层和p型半导体层可以包括：形成在n型半导体层中并与n型电极接触的金属层。

3. 发明申请

US20100213490A1 SEALING COMPOSITION FOR LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE INCLUDING THE SAME 审中-公开
标题翻译：用于发光装置的密封组合物和包括其的发光装置
公开(公告)号：US20100213490A1
公开(公告)日：2010-08-26
申请号：US12711636
申请日：2010-02-24
申请人： Il Woo PARK , Yong Chun Kim , Na Na Park , Bang Won Oh
发明人： Il Woo PARK , Yong Chun Kim , Na Na Park , Bang Won Oh
IPC分类号： H01L33/50 , H01L33/56 , H01L33/58 , C08L63/04 , C09K11/02
CPC分类号： H05B33/04 , C08G59/306 , C08G59/3281 , C08L63/00 , H01L33/501 , H01L33/56 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： According to an aspect of the present invention, there is provided a sealing composition for a light emitting device, the sealing composition including: a silicone/epoxy compound resin including a silicone resin having at least one silicon atom-bonded hydroxyl group and an epoxy resin having at least one oxirane group while the hydroxyl group of the silicone resin and the oxirane group of the epoxy resin are chemically bound to each other.
摘要翻译：根据本发明的一个方面，提供了一种用于发光器件的密封组合物，所述密封组合物包括：包含具有至少一个与硅原子键合的羟基的硅酮树脂和环氧树脂的硅氧烷/环氧化合物树脂具有至少一个环氧乙烷基团，而硅氧烷树脂的羟基和环氧树脂的环氧乙烷基团彼此化学键合。

4. 发明授权

US07282741B2 Vertical type nitride semiconductor light emitting diode 有权
标题翻译：垂直型氮化物半导体发光二极管
公开(公告)号：US07282741B2
公开(公告)日：2007-10-16
申请号：US11153500
申请日：2005-06-16
申请人： Dong Woo Kim , Yong Chun Kim , Hyun Kyung Kim
发明人： Dong Woo Kim , Yong Chun Kim , Hyun Kyung Kim
IPC分类号： H01L27/15 , H01L29/06
CPC分类号： H01L33/38 , H01L33/32 , H01L33/42
摘要： Disclosed herein is a vertical type nitride semiconductor light emitting diode. The nitride semiconductor light emitting diode comprises an n-type nitride semiconductor layer, an active layer formed under the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed under the active layer, and an n-side electrode which comprises a bonding pad formed adjacent to an edge of an upper surface of the n-type nitride semiconductor layer and at least one extended electrode formed in a band from the bonding pad. The bonding pad of the n-side electrode is formed adjacent to the edge of the upper surface of the n-type nitride semiconductor layer acting as a light emitting surface, thereby preventing a wire from shielding light emitted from the active layer. The extended electrode can be formed in various shapes, and prevents concentration of current density, thereby ensuring effective distribution of the current density.
摘要翻译：本文公开了垂直型氮化物半导体发光二极管。氮化物半导体发光二极管包括n型氮化物半导体层，在n型氮化物半导体层下面形成的有源层，在有源层下面形成的p型氮化物半导体层和n侧电极，形成在与n型氮化物半导体层的上表面的边缘相邻的接合焊盘和从接合焊盘形成为带状的至少一个延伸电极。 n侧电极的接合焊盘与作为发光面的n型氮化物半导体层的上表面的边缘相邻地形成，从而防止电线屏蔽从有源层发射的光。扩展电极可以形成为各种形状，并且防止电流密度的集中，从而确保电流密度的有效分布。

5. 发明授权

US07235818B2 Flip chip type nitride semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：倒装芯片型氮化物半导体发光器件及其制造方法
公开(公告)号：US07235818B2
公开(公告)日：2007-06-26
申请号：US10861511
申请日：2004-06-07
申请人： Hyun Kyung Kim , Yong Chun Kim , Hyoun Soo Shin
发明人： Hyun Kyung Kim , Yong Chun Kim , Hyoun Soo Shin
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Disclosed herein are a flip chip type nitride semiconductor light emitting device, which comprises a substrate for growing a nitride semiconductor material, an n-type nitride semiconductor layer formed on the substrate, an active layer formed on at least a part of the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, a bonding force providing layer formed on the p-type nitride semiconductor layer and adapted to provide a bonding force relative to the p-type nitride semiconductor layer, a reflective electrode layer formed on the bonding force providing layer, and adapted to reflect light produced in the active layer toward the substrate and to diffuse electric current, and a cap layer formed on the reflective electrode layer, and adapted to provide a bonding force between the reflective electrode layer and a bonding metal and to reduce contact resistance.
摘要翻译：本文公开了一种倒装芯片型氮化物半导体发光器件，其包括用于生长氮化物半导体材料的衬底，形成在衬底上的n型氮化物半导体层，形成在n型氮化物半导体的至少一部分上的有源层氮化物半导体层，形成在有源层上的p型氮化物半导体层，形成在p型氮化物半导体层上并适于提供相对于p型氮化物半导体层的结合力的接合力提供层，反射电极层，形成在所述接合力提供层上，并且适于将在所述有源层中产生的光朝向所述衬底反射并扩散电流;以及覆盖层，形成在所述反射电极层上，并且适于在所述反射层之间提供接合力电极层和接合金属，并降低接触电阻。

6. 发明授权

US06950929B2 Loop instruction processing using loop buffer in a data processing device having a coprocessor 失效
标题翻译：在具有协处理器的数据处理装置中使用循环缓冲器的循环指令处理
公开(公告)号：US06950929B2
公开(公告)日：2005-09-27
申请号：US09864973
申请日：2001-05-24
申请人： Seung Jae Chung , Yong Chun Kim
发明人： Seung Jae Chung , Yong Chun Kim
IPC分类号： G06F9/32 , G06F9/38 , G06F9/40
CPC分类号： G06F9/3877 , G06F9/325 , G06F9/381
摘要： A data processing device having a central processing unit for fetching instructions from a program memory, decoding the instructions and sending a signal to a coprocessor if a coprocessor-type instruction is decoded; a coprocessor for decoding the coprocessor-type instructions upon receipt of the signal; and a loop buffer for receiving from the program memory instructions within a loop and storing the instructions within the loop when the coprocessor decodes a loop operation from the coprocessor-type instructions, wherein the instructions within the loop are retrieved from the loop buffer for execution in a subsequent iteration of the loop, and wherein a disable signal is sent to the program memory for inhibiting access of the program memory while the instructions within the loop are retrieved from the loop buffer.
摘要翻译：一种数据处理装置，具有用于从程序存储器取出指令的中央处理单元，如果对协处理器型指令进行了解码，则解码指令并向协处理器发送信号; 一个协处理器，用于在接收到该信号时解码协处理器型指令; 以及循环缓冲器，用于当协处理器从协处理器类型指令解码循环操作时，从循环中的程序存储器指令接收存储指令，并且将循环中的指令存储在循环中，其中循环中的指令从循环缓冲器检索以执行循环的后续迭代，并且其中在循环缓冲器中检索循环内的指令时，禁止信号被发送到程序存储器以禁止程序存储器的访问。

7. 发明授权

US07999274B2 White light emitting device 有权
标题翻译：白色发光装置
公开(公告)号：US07999274B2
公开(公告)日：2011-08-16
申请号：US12618269
申请日：2009-11-13
申请人： Jeong Tak Oh , Yong Chun Kim
发明人： Jeong Tak Oh , Yong Chun Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L2924/181 , H01L2924/00012
摘要： A white light emitting device is disclosed. The white light emitting device includes a blue light emitting diode (LED) including a plurality of active layers generating different peak wavelengths, and phosphors emitting yellow light when excited by light emitted from the blue LED. The white light emitting device ensures enhanced excitation efficiency of the phosphors, and high luminance.
摘要翻译：公开了一种白色发光器件。白色发光器件包括蓝色发光二极管（LED），其包括产生不同峰值波长的多个有源层，以及当从蓝色LED发射的光激发时发射黄色光的荧光体。白色发光装置确保荧光体的增强的激发效率和高亮度。

8. 发明申请

US20100181588A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100181588A1
公开(公告)日：2010-07-22
申请号：US12628467
申请日：2009-12-01
申请人： Dong Yul LEE , Seong Ju Park , Min Ki Kwon , Chu Young Cho , Chang Hee Cho , Yong Chun Kim , Seung Beom Seo , Myung Goo Cheong , Dong Joon Kim
发明人： Dong Yul LEE , Seong Ju Park , Min Ki Kwon , Chu Young Cho , Chang Hee Cho , Yong Chun Kim , Seung Beom Seo , Myung Goo Cheong , Dong Joon Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/06
摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括n型半导体层，p型半导体层和设置在其间的有源层，以及设置在有源层与n型和p型之间的至少一种之间的表面等离子体膜层包括金属颗粒和绝缘材料的半导体层，并且包括用于在有源层和n型和p型半导体层中的至少一个之间电连接的导电通孔，其中金属颗粒被绝缘材料包围与n型和p型半导体层中的至少一种绝缘。半导体发光器件可以通过使用表面等离子体共振来实现增强的发射效率。使用半导体发光器件，可以将用于表面等离子体共振的金属的扩散最小化。

9. 发明申请

US20090184334A1 PHOTONIC CRYSTAL LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：光电晶体发光器件及其制造方法
公开(公告)号：US20090184334A1
公开(公告)日：2009-07-23
申请号：US12182383
申请日：2008-07-30
申请人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Yong Chun Kim , Bang Won Oh , Seok Min Hwang , Je Won Kim
发明人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Yong Chun Kim , Bang Won Oh , Seok Min Hwang , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L2933/0083
摘要： There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.
摘要翻译：提供了一种光子晶体发光器件，包括：发光结构，包括第一和第二导电类型半导体层和插入其间的有源层; 形成在所述第二导电型半导体层上的透明电极层，所述透明电极层具有以预定尺寸和周期排列的多个孔，以形成从所述有源层发射的光的光子带隙，由此所述透明电极层包括光子晶体结构; 以及分别与第一导电类型半导体层和透明电极层电连接的第一和第二电极。光子晶体发光器件具有由微孔限定的光子晶体结构形成的透明电极层，从而提高光提取效率。

10. 发明申请

US20090166669A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20090166669A1
公开(公告)日：2009-07-02
申请号：US12251782
申请日：2008-10-15
申请人： Je Won Kim , Yong Chun Kim , Sang Won Kang , Seok Min Hwang , Seung Wan Chae
发明人： Je Won Kim , Yong Chun Kim , Sang Won Kang , Seok Min Hwang , Seung Wan Chae
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L33/025
摘要： A nitride semiconductor light emitting device and a method of manufacturing the same, which can prevent crystal defects such as dislocation while ensuring uniform current spreading into an active layer. The nitride semiconductor light emitting device includes a first n-nitride semiconductor layer formed on a substrate, a first intermediate pattern layer formed on the first n-nitride semiconductor layer, the first intermediate pattern layer having a nanoscale dot structure made of Si compound, a second n-nitride semiconductor layer formed on the first n-nitride semiconductor layer, a second intermediate pattern layer formed on the second n-nitride semiconductor layer, the second intermediate pattern layer having a nanoscale dot structure made of Si compound, which is electrically insulating, a third n-nitride semiconductor layer formed on the second n-nitride semiconductor layer, an active layer formed on the third n-nitride semiconductor layer, and a p-nitride semiconductor layer formed on the active layer.
摘要翻译：一种氮化物半导体发光器件及其制造方法，其可以在确保均匀的电流扩展到有源层的同时防止诸如位错之类的晶体缺陷。氮化物半导体发光器件包括形成在衬底上的第一氮化物半导体层，形成在第一氮化物半导体层上的第一中间图案层，具有由Si化合物制成的纳米级点结构的第一中间图案层，形成在所述第一氮化物半导体层上的第二氮化物半导体层，形成在所述第二氮化物半导体层上的第二中间图案层，所述第二中间图案层具有由Si化合物制成的纳米级点结构，所述第二中间图案层是电绝缘的形成在第二氮化物半导体层上的第三氮化物半导体层，形成在第三氮化物半导体层上的有源层和形成在有源层上的p型氮化物半导体层。

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