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1. 发明申请

US20060003541A1 Method for forming device isolation film of semiconductor device 审中-公开
标题翻译：半导体器件隔离膜形成方法
公开(公告)号：US20060003541A1
公开(公告)日：2006-01-05
申请号：US10998806
申请日：2004-11-30
申请人： Hyung Choi , Bo Wi
发明人： Hyung Choi , Bo Wi
IPC分类号： H01L21/76
CPC分类号： H01L21/76229 , H01L27/1052
摘要： A method for forming device isolation film of semiconductor device is provided, the method including sequentially forming a pad oxide layer and a pad nitride layer on a semiconductor substrate having a cell region and a peripheral circuit region, etching a predetermined region of the pad nitride layer, the pad oxide layer, and the semiconductor substrate to form a trench, forming an sidewall oxide film on a surface of the trench, etching a predetermined thickness of the sidewall oxide film in the cell region, forming a liner nitride film and a liner oxide film on the semiconductor substrate including the trench and the pad nitride layer, depositing a HDP oxide film to fill up the trench, performing a planarization process to expose the pad nitride layer, and removing the pad nitride layer.
摘要翻译：提供了一种用于形成半导体器件的器件隔离膜的方法，该方法包括在具有单元区域和外围电路区域的半导体衬底上依次形成衬垫氧化物层和衬垫氮化物层，蚀刻衬垫氮化物层的预定区域，衬垫氧化物层和半导体衬底以形成沟槽，在沟槽的表面上形成侧壁氧化膜，蚀刻电池区域中的侧壁氧化物膜的预定厚度，形成衬里氮化物膜和衬里氧化物在包括沟槽和衬垫氮化物层的半导体衬底上形成膜，沉积HDP氧化物膜以填充沟槽，执行平坦化工艺以露出衬垫氮化物层，以及去除焊盘氮化物层。

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