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1. 发明授权

US09461226B2 Thermoelectric material and method of preparing the same 有权
标题翻译：热电材料及其制备方法
公开(公告)号：US09461226B2
公开(公告)日：2016-10-04
申请号：US12953993
申请日：2010-11-24
申请人： Hyun-sik Kim , Kyu-hyoung Lee , Sang-mock Lee , Eun-sung Lee , Xiangshu Li
发明人： Hyun-sik Kim , Kyu-hyoung Lee , Sang-mock Lee , Eun-sung Lee , Xiangshu Li
IPC分类号： H01L35/16 , H01L35/18 , B82Y30/00 , H01L35/26 , H01L35/02 , H01L35/00
CPC分类号： H01L35/16 , B82Y30/00 , H01L35/00 , H01L35/02 , H01L35/18 , H01L35/26
摘要： A thermoelectric material including: a bismuth-tellurium (Bi—Te)-based thermoelectric material matrix; and a nano-metal component distributed in the Bi—Te-based thermoelectric material matrix, wherein a Lotgering degree of orientation in a c-axis direction is about 0.9 to about 1.
摘要翻译：一种热电材料，包括：基于铋 - 碲（Bi-Te）的热电材料基体; 以及分布在所述Bi-Te基热电材料基体中的纳米金属成分，其中c轴方向的取向度为约0.9〜约1。

2. 发明申请

US20100155665A1 Nano phosphor, method of preparing the same, and display including the nano phosphor 审中-公开
标题翻译：纳米荧光粉，其制备方法和纳米荧光体的显示
公开(公告)号：US20100155665A1
公开(公告)日：2010-06-24
申请号：US12654363
申请日：2009-12-17
申请人： Hyun-sik Kim , Soon-jae Kwon , Soo-yeon Seo , Gyeong-su Park
发明人： Hyun-sik Kim , Soon-jae Kwon , Soo-yeon Seo , Gyeong-su Park
IPC分类号： C09K11/61 , C09K11/08 , C09K11/63
CPC分类号： C09K11/778
摘要： A nano phosphor prepared by mixing a metal oxide nanoparticle and inorganic salt, a method of preparing the nano phosphor, and a display device including the nano phosphor. The method includes dissolving the inorganic salt in a solvent, adding the metal oxide nanoparticles to the solution, and annealing the resultant mixture, preferably under pressure. Such a process removes defects in the crystal structure of the nano phosphor, resulting in improved luminescent efficiency when incorporated into a display device.
摘要翻译：通过混合金属氧化物纳米颗粒和无机盐制备的纳米磷光体，制备纳米磷光体的方法和包括纳米磷光体的显示装置。该方法包括将无机盐溶解在溶剂中，将金属氧化物纳米颗粒加入到溶液中，并优选在压力下对所得混合物进行退火。这种方法消除了纳米磷光体的晶体结构中的缺陷，导致当结合到显示装置中时发光效率提高。

3. 发明授权

US09239391B2 Apparatus and method for distinguishing energy bands of photons in multi-energy radiation 有权
标题翻译：用于区分多能辐射光子能带的装置和方法
公开(公告)号：US09239391B2
公开(公告)日：2016-01-19
申请号：US13561503
申请日：2012-07-30
申请人： Sang-wook Han , Hyun-sik Kim , Jun-hyeok Yang , Gyu-hyeong Cho , Young-hun Sung
发明人： Sang-wook Han , Hyun-sik Kim , Jun-hyeok Yang , Gyu-hyeong Cho , Young-hun Sung
IPC分类号： G06F15/00 , G01T1/17 , A61B6/03 , A61B6/00 , G01T1/16 , G01T1/29
CPC分类号： G01T1/17 , A61B6/032 , A61B6/4241 , G01T1/16 , G01T1/246 , G01T1/247 , G01T1/2928 , G01T1/36
摘要： An apparatus for distinguishing an energy band of a photon in a readout circuit that counts photons in multi-energy radiation incident onto a sensor for each energy band includes an integrator configured to accumulate an electric signal received from the sensor that has undergone photoelectric conversion from the photon; a comparator configured to compare an accumulated electric signal received from the integrator with one of a plurality of threshold values; and a signal processor configured to instruct sequential switching from one of the plurality of threshold values to another one of the plurality of threshold values according to a result of a comparison received from the comparator; and output a digital signal that distinguishes an energy band of the photon based on results received from the comparator of sequential comparisons of the accumulated electric signal with the plurality of threshold values.
摘要翻译：用于区分在每个能带上入射到传感器上的多能量辐射中计数光子的读出电路中的光子能带的装置包括积分器，其被配置为累积从已经经历光电转换的传感器接收的电信号光子比较器，用于将从积分器接收的累积电信号与多个阈值中的一个进行比较; 以及信号处理器，被配置为根据从所述比较器接收的比较结果，指示从所述多个阈值中的一个到所述多个阈值中的一个阈值的顺序切换; 并输出基于从累积电信号与多个阈值的顺序比较的比较器接收的结果来区分光子的能带的数字信号。

4. 发明授权

US08957361B2 Switching circuit, charge sense amplifier including switching circuit, and photon counting device including switching circuit 有权
标题翻译：开关电路，包括开关电路的电荷读出放大器和包括开关电路的光子计数装置
公开(公告)号：US08957361B2
公开(公告)日：2015-02-17
申请号：US13586183
申请日：2012-08-15
申请人： Sang-wook Han , Hyun-sik Kim , Young-hun Sung , Jun-hyeok Yang , Gyu-hyeong Cho
发明人： Sang-wook Han , Hyun-sik Kim , Young-hun Sung , Jun-hyeok Yang , Gyu-hyeong Cho
IPC分类号： H03K17/00 , H03M1/34
CPC分类号： A61B6/4241 , H03F3/45475 , H03F2200/261 , H03F2203/45512 , H03F2203/45534 , H03F2203/45536
摘要： A switching circuit, a charge sense amplifier, and a photon counting device are provided. The switching circuit configured to close and open a connection between a first terminal and a second terminal of a predetermined circuit element, includes: a first transistor comprising a source connected to the first terminal, a drain connected to the second terminal, and a gate; a second transistor comprising a drain, a source, and a gate connected to the drain of the second transistor; a current source configured to supply a current flowing through the drain and the source of the second transistor, to generate a gate voltage of the gate of the second transistor; and a multiplexer configured to receive the gate voltage, a reference voltage, and a control signal, and selectively apply the gate voltage or the reference voltage to the gate of the first transistor based on the control signal.
摘要翻译：提供开关电路，电荷读出放大器和光子计数装置。所述开关电路被配置为关闭并打开预定电路元件的第一端子和第二端子之间的连接，所述开关电路包括：第一晶体管，包括连接到所述第一端子的源极，连接到所述第二端子的漏极和栅极; 第二晶体管，包括连接到第二晶体管的漏极的漏极，源极和栅极; 电流源，被配置为提供流过所述第二晶体管的漏极和源极的电流，以产生所述第二晶体管的栅极的栅极电压; 以及多路复用器，其被配置为接收所述栅极电压，参考电压和控制信号，并且基于所述控制信号选择性地将栅极电压或参考电压施加到所述第一晶体管的栅极。

5. 发明申请

US20090142245A1 Method of producing nanophosphor particles 有权
标题翻译：生产纳米荧光粉颗粒的方法
公开(公告)号：US20090142245A1
公开(公告)日：2009-06-04
申请号：US12292894
申请日：2008-11-28
申请人： Soon-jae Kwon , Hyun-sik Kim
发明人： Soon-jae Kwon , Hyun-sik Kim
IPC分类号： C01F17/00
CPC分类号： C09K11/7797 , C09K11/7712 , Y10S977/775
摘要： Provided is a method of producing spherical nanophosphor particles having a uniform size distribution. When nanophosphor obtained using the method is used in a flat panel display, the flat panel display has higher screen brightness and a higher resolution.
摘要翻译：提供具有均匀尺寸分布的球形纳米荧光体颗粒的制造方法。当使用该方法获得的纳米荧光体用于平板显示器时，平板显示器具有较高的屏幕亮度和更高的分辨率。

6. 发明申请

US20090140203A1 Rare earth nano phosphor and method of preparing the same 审中-公开
标题翻译：稀土纳米磷光体及其制备方法
公开(公告)号：US20090140203A1
公开(公告)日：2009-06-04
申请号：US12081405
申请日：2008-04-15
申请人： Hyun-sik Kim , Soon-jae Kwon
发明人： Hyun-sik Kim , Soon-jae Kwon
IPC分类号： C09K11/84
CPC分类号： C09K11/7781 , B82Y30/00 , C01F17/0043 , C01P2002/50 , C01P2002/72 , C01P2002/84 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/52 , C01P2004/62 , C01P2004/64
摘要： Provided are a rare earth nano phosphor and a method of preparing a rare earth nano phosphor, the method includes: (a) synthesis of rare earth nano phosphor precursor particles by radiating microwave energy to a solvent where rare earth metal compounds are dissolved; and (b) sintering of inorganic salt and the rare earth nano phosphor precursor mixture.
摘要翻译：提供稀土纳米磷光体和稀土纳米磷光体的制备方法，该方法包括：（a）通过将微波能量辐射到溶解有稀土金属化合物的溶剂中来合成稀土纳米荧光体前体颗粒; 和（b）无机盐和稀土纳米荧光体前体混合物的烧结。

7. 发明授权

US08894957B2 Method of producing nanophosphor particles 有权
标题翻译：生产纳米荧光粉颗粒的方法
公开(公告)号：US08894957B2
公开(公告)日：2014-11-25
申请号：US12292894
申请日：2008-11-28
申请人： Soon-jae Kwon , Hyun-sik Kim
发明人： Soon-jae Kwon , Hyun-sik Kim
IPC分类号： C01F17/00 , C09K11/77
CPC分类号： C09K11/7797 , C09K11/7712 , Y10S977/775
摘要： Provided is a method of producing spherical nanophosphor particles having a uniform size distribution. When nanophosphor obtained using the method is used in a flat panel display, the flat panel display has higher screen brightness and a higher resolution.
摘要翻译：提供具有均匀尺寸分布的球形纳米荧光体颗粒的制造方法。当使用该方法获得的纳米荧光体用于平板显示器时，平板显示器具有较高的屏幕亮度和更高的分辨率。

8. 发明申请

US20130041628A1 APPARATUS AND METHOD FOR DISTINGUISHING ENERGY BANDS OF PHOTONS IN MULTI-ENERGY RADIATION 有权
标题翻译：用于评估多能量辐射中光子能量的装置和方法
公开(公告)号：US20130041628A1
公开(公告)日：2013-02-14
申请号：US13561503
申请日：2012-07-30
申请人： Sang-wook Han , Hyun-sik Kim , Jun-hyeok Yang , Gyu-hyeong Cho , Young-hun Sung
发明人： Sang-wook Han , Hyun-sik Kim , Jun-hyeok Yang , Gyu-hyeong Cho , Young-hun Sung
IPC分类号： G06F15/00
CPC分类号： G01T1/17 , A61B6/032 , A61B6/4241 , G01T1/16 , G01T1/246 , G01T1/247 , G01T1/2928 , G01T1/36
摘要： An apparatus for distinguishing an energy band of a photon in a readout circuit that counts photons in multi-energy radiation incident onto a sensor for each energy band includes an integrator configured to accumulate an electric signal received from the sensor that has undergone photoelectric conversion from the photon; a comparator configured to compare an accumulated electric signal received from the integrator with one of a plurality of threshold values; and a signal processor configured to instruct sequential switching from one of the plurality of threshold values to another one of the plurality of threshold values according to a result of a comparison received from the comparator; and output a digital signal that distinguishes an energy band of the photon based on results received from the comparator of sequential comparisons of the accumulated electric signal with the plurality of threshold values.
摘要翻译：用于区分在每个能带上入射到传感器上的多能量辐射中计数光子的读出电路中的光子能带的装置包括积分器，其被配置为累积从已经经历光电转换的传感器接收的电信号光子比较器，用于将从积分器接收的累积电信号与多个阈值中的一个进行比较; 以及信号处理器，被配置为根据从所述比较器接收的比较结果，指示从所述多个阈值中的一个到所述多个阈值中的一个阈值的顺序切换; 并输出基于从累积电信号与多个阈值的顺序比较的比较器接收的结果来区分光子的能带的数字信号。

9. 发明授权

US06779181B1 Micro-scheduling method and operating system kernel 失效
标题翻译：微调度方法和操作系统内核
公开(公告)号：US06779181B1
公开(公告)日：2004-08-17
申请号：US09536044
申请日：2000-03-27
申请人： Hang-jae Yu , Hyun-sik Kim
发明人： Hang-jae Yu , Hyun-sik Kim
IPC分类号： G06F900
CPC分类号： G06F9/4881
摘要： A scheduling method implemented in an operating system kernel for supporting multimedia applications is provided. The micro-scheduling method includes the steps of determining a performance parameter by measuring I/O-bound job performance and CPU-bound job performance in a given application, and appropriately adjusting the performance parameter according to a policy set by a system administrator when carrying out job admission control. Determining an order of priority for processing application classes based on the performance measuring and job admission control by scheduling the periodical execution of I/O jobs of data which need not be moved to a user space due to the characteristics of multimedia applications, and executing a special I/O system call according to the order of priority for processing is also provided. The micro-scheduling method enables the support of accurate QoS for any operating system which supports multimedia applications.
摘要翻译：提供了一种在支持多媒体应用的操作系统内核中实现的调度方法。微调度方法包括以下步骤：通过测量给定应用中的I / O绑定作业性能和CPU绑定作业性能来确定性能参数，并根据系统管理员在携带时设置的策略来适当地调整性能参数出入职控制。通过调度由于多媒体应用的特性而不需要移动到用户空间的数据的I / O作业的定期执行，确定基于性能测量和作业准入控制来处理应用类的优先级顺序，以及执行还提供了按照优先级顺序进行特殊I / O系统调用的处理。微调度方法支持对支持多媒体应用的任何操作系统的准确QoS。

10. 发明授权

US06245624B1 Methods of fabricating field effect transistors by first forming heavily doped source/drain regions and then forming lightly doped source/drain regions 有权
标题翻译：通过首先形成重掺杂的源极/漏极区域，然后形成轻掺杂的源极/漏极区域来制造场效应晶体管的方法
公开(公告)号：US06245624B1
公开(公告)日：2001-06-12
申请号：US09304356
申请日：1999-05-04
申请人： Hyun-sik Kim , Heon-jong Shin
发明人： Hyun-sik Kim , Heon-jong Shin
IPC分类号： H01L21336
CPC分类号： H01L29/6659
摘要： Heavily doped source/drain regions are formed in an integrated circuit substrate prior to forming lightly doped source/drain regions in the integrated circuit substrate. High temperature thermal processing preferably is carried out prior to forming the lightly doped source/drain regions in the integrated circuit substrate. Reduced short channel effects may thereby be obtained while still achieving shallow junctions. More specifically, an insulated gate electrode comprising polysilicon is formed on an integrated circuit substrate. The insulated gate electrode is oxidized. A gate spacer is formed on the oxidized sidewalls of the insulated gate electrode. Heavily doped source/drain regions are formed in the integrated circuit substrate by first implanting ions into the integrated circuit substrate using the insulated gate electrode and the gate spacer on the oxidized sidewalls of the insulated gate electrode as an implantation mask. The gate spacer is removed from the oxidized sidewalls of the insulated gate electrode after performing the step of forming heavily doped source/drain regions in the integrated circuit substrate. Finally, lightly doped source/drain regions, that are lightly doped relative to the heavily doped source/drain regions, are formed in the integrated circuit substrate. The lightly doped source/drain regions are formed by implanting ions into the integrated circuit substrate using the insulated gate electrode as an implantation mask, after performing the step of removing the gate spacers from the oxidized sidewalls of the insulated gate electrode.
摘要翻译：在集成电路基板中形成轻掺杂的源极/漏极区之前，在集成电路衬底中形成重掺杂的源/漏区。优选在形成集成电路基板内的轻掺杂源/漏区之前进行高温热处理。从而可以在仍然实现浅结的同时获得减少的短通道效应。更具体地，在集成电路基板上形成包括多晶硅的绝缘栅电极。绝缘栅电极被氧化。在绝缘栅电极的氧化侧壁上形成栅极间隔物。在集成电路衬底中形成重掺杂的源极/漏极区，首先使用绝缘栅电极和绝缘栅电极的氧化侧壁上的栅极间隔作为注入掩模将离子注入集成电路衬底。在执行在集成电路基板中形成重掺杂源极/漏极区域的步骤之后，将栅极间隔物从绝缘栅电极的氧化侧壁上去除。最后，在集成电路衬底中形成相对于重掺杂源/漏区轻稀释的轻掺杂源/漏区。在执行从绝缘栅电极的氧化侧壁去除栅极间隔物的步骤之后，通过使用绝缘栅电极作为注入掩模将离子注入到集成电路衬底中来形成轻掺杂的源/漏区。

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