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1. 发明申请

US20080191807A1 Signal converter having compensation unit 有权
标题翻译：信号转换器具有补偿单元
公开(公告)号：US20080191807A1
公开(公告)日：2008-08-14
申请号：US12008769
申请日：2008-01-14
申请人： Hyun-Won Mun , Il-Ku Nam , Won Ko
发明人： Hyun-Won Mun , Il-Ku Nam , Won Ko
IPC分类号： H03F3/04
CPC分类号： H03F3/193 , H03F1/223 , H03F1/3211 , H03F3/45179 , H03F2200/451 , H03F2203/45306 , H03F2203/45318
摘要： A signal converter includes a signal converting unit and a compensation unit. The signal converting unit generates intermediate differential signals at intermediate nodes in response to a single-ended signal. The compensation unit generates compensated differential signals at output nodes by minimizing phase and amplitude mismatch errors between the intermediate differential signals. The compensation unit includes a pair of transistors and a pair of capacitors configured in symmetry between the intermediate and output nodes. The signal converter of the present invention may be used to particular advantage in an RF receiver.
摘要翻译：信号转换器包括信号转换单元和补偿单元。信号转换单元响应于单端信号在中间节点产生中间差分信号。补偿单元通过使中间差分信号之间的相位和幅度失配误差最小化，在输出节点产生补偿差分信号。补偿单元包括一对晶体管和一对配置在中间和输出节点之间对称的电容器。本发明的信号转换器可以在RF接收机中特别有用。

2. 发明授权

US07646250B2 Signal converter having compensation unit 有权
标题翻译：信号转换器具有补偿单元
公开(公告)号：US07646250B2
公开(公告)日：2010-01-12
申请号：US12008769
申请日：2008-01-14
申请人： Hyun-Won Mun , Il-Ku Nam , Won Ko
发明人： Hyun-Won Mun , Il-Ku Nam , Won Ko
IPC分类号： H03F3/04
CPC分类号： H03F3/193 , H03F1/223 , H03F1/3211 , H03F3/45179 , H03F2200/451 , H03F2203/45306 , H03F2203/45318
摘要： A signal converter includes a signal converting unit and a compensation unit. The signal converting unit generates intermediate differential signals at intermediate nodes in response to a single-ended signal. The compensation unit generates compensated differential signals at output nodes by minimizing phase and amplitude mismatch errors between the intermediate differential signals. The compensation unit includes a pair of transistors and a pair of capacitors configured in symmetry between the intermediate and output nodes. The signal converter of the present invention may be used to particular advantage in an RF receiver.
摘要翻译：信号转换器包括信号转换单元和补偿单元。信号转换单元响应于单端信号在中间节点产生中间差分信号。补偿单元通过使中间差分信号之间的相位和幅度失配误差最小化，在输出节点产生补偿差分信号。补偿单元包括一对晶体管和一对配置在中间和输出节点之间对称的电容器。本发明的信号转换器可以在RF接收机中特别有用。

3. 发明授权

US07877077B2 Multi-band low noise amplifier and multi-band radio frequency receiver including the same 有权
标题翻译：多频带低噪声放大器和多频带射频接收机包括相同
公开(公告)号：US07877077B2
公开(公告)日：2011-01-25
申请号：US11873484
申请日：2007-10-17
申请人： Hyun-Won Mun , Seong-Han Ryu , Il-Ku Nam
发明人： Hyun-Won Mun , Seong-Han Ryu , Il-Ku Nam
IPC分类号： H04B1/16
CPC分类号： H04B1/1638 , H03F1/26 , H03F3/68 , H03F2200/294
摘要： A multi-band low noise amplifier (LNA) includes multiple low noise amplifying circuits configured to selectively operate in corresponding frequency bands. The low noise amplifying circuits include corresponding amplifying units and degenerating units. The degenerating units include first inductors, which are arranged in loop patterns isolated from each other on a same layer, such that one first inductor surrounds at least one other first inductor. A current flows through a selected first inductor included in a selected low noise amplifying circuit of the low noise amplifying circuits.
摘要翻译：多频带低噪声放大器（LNA）包括被配置为选择性地在相应频带中操作的多个低噪声放大电路。低噪声放大电路包括相应的放大单元和退化单元。退化单元包括第一电感器，它们被布置成在同一层上彼此隔离的环形图案，使得一个第一电感器包围至少一个其它第一电感器。 A电流流过包括在低噪声放大电路的所选低噪声放大电路中的所选择的第一电感器。

4. 发明授权

US07633337B2 Feedback-type variable gain amplifier and method of controlling the same 失效
标题翻译：反馈式可变增益放大器及其控制方法
公开(公告)号：US07633337B2
公开(公告)日：2009-12-15
申请号：US11753739
申请日：2007-05-25
申请人： Il-Ku Nam , Young-Jin Kim , Hyun-Won Mun
发明人： Il-Ku Nam , Young-Jin Kim , Hyun-Won Mun
IPC分类号： H03F1/36
CPC分类号： H03G1/0088 , H03F1/342 , H03F1/56 , H03F3/193 , H03F3/45183 , H03F3/45188 , H03F2200/117 , H03F2200/141 , H03F2200/147 , H03F2200/301 , H03F2200/451 , H03F2203/45481 , H03F2203/45524 , H03F2203/45532 , H03F2203/45638 , H03F2203/45641 , H03F2203/45691
摘要： A feedback-type variable gain amplifier including a first field effect transistor, a feedback circuit, and a load circuit. The first field effect transistor receives an input voltage signal through an input node, amplifies the input voltage signal, and outputs the amplified input voltage signal through an output node. The feedback circuit is coupled between the input node and the output node, and generates feedback impedance that is changed in response to a control signal. The load circuit is coupled between the output node and a voltage source, and generates load impedance that is changed in response to the control signal to cancel a change of input impedance due to a change of the feedback impedance. Therefore, since the input impedance is not changed when the gain of the amplifier is changed, a voltage standing wave ratio is good, and a range of gain control is broad.
摘要翻译：一种反馈型可变增益放大器，包括第一场效应晶体管，反馈电路和负载电路。第一场效应晶体管通过输入节点接收输入电压信号，放大输入电压信号，并通过输出节点输出放大的输入电压信号。反馈电路耦合在输入节点和输出节点之间，并产生响应于控制信号而改变的反馈阻抗。负载电路耦合在输出节点和电压源之间，并且产生响应于控制信号而改变的负载阻抗，以抵消由于反馈阻抗的变化引起的输入阻抗的变化。因此，由于当放大器的增益改变时输入阻抗不变，所以电压驻波比良好，增益控制范围宽。

5. 发明授权

US07564298B2 Voltage reference circuit and current reference circuit using vertical bipolar junction transistor implemented by deep n-well CMOS process 失效
标题翻译：采用深n阱CMOS工艺实现的垂直双极结型晶体管的参考电压和电流参考电路
公开(公告)号：US07564298B2
公开(公告)日：2009-07-21
申请号：US11608279
申请日：2006-12-08
申请人： Hyun-Won Mun , Il-Ku Nam , Sang-Yeob Lee , Min-Kyu Je
发明人： Hyun-Won Mun , Il-Ku Nam , Sang-Yeob Lee , Min-Kyu Je
IPC分类号： G05F1/10
CPC分类号： G05F3/30
摘要： A voltage reference circuit and a current reference circuit using a vertical bipolar junction transistor (BJT) implemented by a deep N-well complementary metal-oxide semiconductor (CMOS) process, wherein the voltage reference circuit generates a constant reference voltage regardless of temperature and includes an amplifier element having a positive input terminal and a negative input terminal, a first transistor, and a second transistor. The first transistor is electrically connected to the positive input terminal and the second transistor is electrically connected to the negative input terminal. Each of the first and second transistors is a vertical BJT implemented by a deep N-well CMOS process, and the reference voltage is calculated by adding a base-emitter voltage of one of the first and second transistors to a value obtained by multiplying a thermal voltage by a predetermined factor. Accordingly, circuits having better reproducibility, uniformity, and device matching than circuits that use a lateral NPN/PNP device or substrate NPN/PNP device manufactured using a CMOS process are provided.
摘要翻译：使用通过深N阱互补金属氧化物半导体（CMOS）工艺实现的垂直双极结型晶体管（BJT）的电压参考电路和电流参考电路，其中所述电压参考电路产生恒定的参考电压，而不管温度如何，并且包括具有正输入端和负输入端的放大器元件，第一晶体管和第二晶体管。第一晶体管电连接到正输入端，第二晶体管电连接到负输入端。第一晶体管和第二晶体管中的每一个是通过深N阱CMOS工艺实现的垂直BJT，并且通过将第一和第二晶体管中的一个晶体管的基极 - 发射极电压相加到通过将热电压达预定因子。因此，提供了具有比使用使用CMOS工艺制造的侧面NPN / PNP器件或衬底NPN / PNP器件的电路更好的再现性，均匀性和器件匹配的电路。

6. 发明申请

US20080106304A1 SEMICONDUCTOR CIRCUITS USING VERTICAL BIPOLAR JUNCTION TRANSISTOR 审中-公开
标题翻译：使用垂直双极晶体管晶体管的半导体电路
公开(公告)号：US20080106304A1
公开(公告)日：2008-05-08
申请号：US11560452
申请日：2006-11-16
申请人： Hyun-Won Mun , Il-Ku Nam
发明人： Hyun-Won Mun , Il-Ku Nam
IPC分类号： G01R19/00
CPC分类号： H03F3/165
摘要： An amplifier circuit includes: an amplification transistor, which is connected to an input node and an output node, amplifying an input signal and generating an output signal; and a load connected between the output node and a predetermined power supply node, wherein the amplification transistor is a vertical bipolar junction transistor. A variable gain amplifier circuit includes: a voltage converter converting a control voltage and outputting a converted control voltage; and an amplification transistor receiving the converted control signal from the voltage converter and amplifying an input signal to output an output signal whose gain is proportional to the control voltage, wherein the amplification transistor is a vertical bipolar junction transistor. A single pole log-domain circuit includes: a first transistor receiving an input current; a second transistor having a base terminal connected to a base terminal of the first transistor; a third transistor having an emitter terminal connected to an emitter terminal of the second transistor; and a fourth transistor having a base terminal connected to a base terminal of the third transistor, wherein each of the first through fourth transistors is a vertical BJT.
摘要翻译：放大电路包括：放大晶体管，其连接到输入节点和输出节点，放大输入信号并产生输出信号; 以及连接在所述输出节点和预定电源节点之间的负载，其中所述放大晶体管是垂直双极结型晶体管。可变增益放大器电路包括：转换控制电压并输出转换的控制电压的电压转换器; 以及放大晶体管，其接收来自所述电压转换器的转换后的控制信号，并放大输入信号以输出其增益与所述控制电压成比例的输出信号，其中所述放大晶体管为垂直双极结型晶体管。单极对数域电路包括：接收输入电流的第一晶体管; 第二晶体管，其具有连接到所述第一晶体管的基极端子的基极; 第三晶体管，其发射极端子连接到第二晶体管的发射极端子; 以及具有连接到所述第三晶体管的基极端子的基极端子的第四晶体管，其中所述第一至第四晶体管中的每一个是垂直BJT。

7. 发明授权

US08422981B2 Multi-band low noise amplifier and multi-band radio frequency receiver including the same 有权
标题翻译：多频段低噪声放大器和多频带射频接收机包括相同
公开(公告)号：US08422981B2
公开(公告)日：2013-04-16
申请号：US12968712
申请日：2010-12-15
申请人： Hyun-Won Mun , Seong-Han Ryu , Il-Ku Nam
发明人： Hyun-Won Mun , Seong-Han Ryu , Il-Ku Nam
IPC分类号： H04B1/16
CPC分类号： H04B1/1638 , H03F1/26 , H03F3/68 , H03F2200/294
摘要： An integrated circuit (IC) includes multiple circuits isolated with respect to one another. Each circuit of the multiple circuits includes an inductor pair formed in a loop pattern on a same layer as at least one other inductor pair from another circuit of the multiple circuits, such that the inductor pair surrounds and is isolated from the at least one other inductor pair.
摘要翻译：集成电路（IC）包括彼此隔离的多个电路。多个电路的每个电路包括在与多个电路的另一电路的至少一个另外的电感器对相同的层上以环形图案形成的电感器对，使得电感器对围绕并与至少一个其它电感器隔离对。

8. 发明授权

US07860468B2 Programmable variable gain amplifier and RF receiver including the same 有权
标题翻译：可编程可变增益放大器和射频接收器包括相同
公开(公告)号：US07860468B2
公开(公告)日：2010-12-28
申请号：US11933504
申请日：2007-11-01
申请人： Il-Ku Nam , Byeong-Ha Park , Jong-Dae Bae , Jung-Wook Heo , Ho-Jung Ju , Hyun-Won Mun , Jeong-Hyun Choi
发明人： Il-Ku Nam , Byeong-Ha Park , Jong-Dae Bae , Jung-Wook Heo , Ho-Jung Ju , Hyun-Won Mun , Jeong-Hyun Choi
IPC分类号： H04B1/04 , H04B1/06
CPC分类号： H03F3/19 , H03F1/32 , H03F2200/294 , H03G1/0029 , H03G1/0088
摘要： A programmable variable gain amplifier includes at least three amplifiers. A first amplifier is configured to amplify an input signal. A second amplifier, which includes a programmable output load stage, is configured to receive an output signal from the first amplifier and to output a first differential output signal. The output load stage includes multiple first switches and multiple first diode-connected transistors that are open-circuited or short-circuited by the first switches. A third amplifier, which includes a programmable current mirror input stage, is configured to receive the first differential output signal from the second amplifier through the current mirror input stage and to output a second differential output signal. The current mirror input stage includes multiple second switches and multiple second transistors that are open-circuited or short-circuited by the plurality of second switches. The second transistors respectively form current mirrors with the first diode-connected transistors corresponding to the second transistors.
摘要翻译：可编程可变增益放大器包括至少三个放大器。第一放大器被配置为放大输入信号。包括可编程输出负载级的第二放大器被配置为从第一放大器接收输出信号并输出第一差分输出信号。输出负载级包括由第一开关断开或短路的多个第一开关和多个第一二极管连接的晶体管。包括可编程电流镜输入级的第三放大器被配置为通过电流镜输入级从第二放大器接收第一差分输出信号并输出第二差分输出信号。电流反射镜输入级包括多个第二开关和由多个第二开关断路或短路的多个第二晶体管。第二晶体管分别形成与第二晶体管对应的第一二极管连接的晶体管的电流镜。

9. 发明申请

US20070182478A1 VOLTAGE REFERENCE CIRCUIT AND CURRENT REFERENCE CIRCUIT USING VERTICAL BIPOLAR JUNCTION TRANSISTOR IMPLEMENTED BY DEEP N-WELL CMOS PROCESS 失效
标题翻译：使用深埋N-CMOS CMOS工艺实现的垂直双极晶体管的电压参考电路和电流参考电路
公开(公告)号：US20070182478A1
公开(公告)日：2007-08-09
申请号：US11608279
申请日：2006-12-08
申请人： Hyun-Won Mun , Il-Ku Nam , Sang-Yeob Lee , Min-Kyu Je
发明人： Hyun-Won Mun , Il-Ku Nam , Sang-Yeob Lee , Min-Kyu Je
IPC分类号： G05F1/10
CPC分类号： G05F3/30
摘要： A voltage reference circuit and a current reference circuit using a vertical bipolar junction transistor (BJT) implemented by a deep N-well complementary metal-oxide semiconductor (CMOS) process, wherein the voltage reference circuit generates a constant reference voltage regardless of temperature and includes an amplifier element having a positive input terminal and a negative input terminal, a first transistor, and a second transistor. The first transistor is electrically connected to the positive input terminal and the second transistor is electrically connected to the negative input terminal. Each of the first and second transistors is a vertical BJT implemented by a deep N-well CMOS process, and the reference voltage is calculated by adding a base-emitter voltage of one of the first and second transistors to a value obtained by multiplying a thermal voltage by a predetermined factor. Accordingly, circuits having better reproducibility, uniformity, and device matching than circuits that use a lateral NPN/PNP device or substrate NPN/PNP device manufactured using a CMOS process are provided.
摘要翻译：使用通过深N阱互补金属氧化物半导体（CMOS）工艺实现的垂直双极结型晶体管（BJT）的电压参考电路和电流参考电路，其中所述电压参考电路产生恒定的参考电压，而不管温度如何，并且包括具有正输入端和负输入端的放大器元件，第一晶体管和第二晶体管。第一晶体管电连接到正输入端，第二晶体管电连接到负输入端。第一晶体管和第二晶体管中的每一个是通过深N阱CMOS工艺实现的垂直BJT，并且通过将第一和第二晶体管中的一个晶体管的基极 - 发射极电压相加到通过将热电压达预定因子。因此，提供了具有比使用使用CMOS工艺制造的侧面NPN / PNP器件或衬底NPN / PNP器件的电路更好的再现性，均匀性和器件匹配的电路。

10. 发明申请

US20070096813A1 Differential circuit with improved linearity 失效
标题翻译：差分电路具有提高的线性度
公开(公告)号：US20070096813A1
公开(公告)日：2007-05-03
申请号：US11443619
申请日：2006-05-31
申请人： Il-Ku Nam , Hyun-Won Mun
发明人： Il-Ku Nam , Hyun-Won Mun
IPC分类号： H03F3/45
CPC分类号： H03F1/3211 , H03F3/45085 , H03F3/45183 , H03F2200/294 , H03F2200/372 , H03F2203/45362 , H03F2203/45371
摘要： A differential circuit includes main transistors differentially coupled for converting differential input signals into main differential currents at output terminals. The differential circuit also includes compensation transistors coupled to the main transistors for converting the differential input signals into compensation differential currents at the output terminals. Each compensation differential current has an exponential current-voltage characteristic for improving linearity of the differential circuit.
摘要翻译：差分电路包括差分耦合的主晶体管，用于将差分输入信号转换成输出端子处的主差分电流。差分电路还包括耦合到主晶体管的补偿晶体管，用于将差分输入信号转换成输出端子处的补偿差分电流。每个补偿差分电流具有指数电流 - 电压特性，用于提高差分电路的线性度。

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