专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100129947A1 Resistance-variable memory device, method for fabricating the same and memory system including the same 审中-公开
标题翻译：电阻可变存储器件，其制造方法和包括该器件的存储器系统
公开(公告)号：US20100129947A1
公开(公告)日：2010-05-27
申请号：US12591393
申请日：2009-11-18
申请人： Hyun-Suk Lee , Tai-Soo Lim , HyunSeok Lim , Insun Park , Jaehyoung Choi
发明人： Hyun-Suk Lee , Tai-Soo Lim , HyunSeok Lim , Insun Park , Jaehyoung Choi
IPC分类号： H01L45/00 , H01L21/00
CPC分类号： H01L45/141 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/16
摘要： In the method of fabricating the variable-resistance memory device, a substrate including a conductive region is provided, and a preliminary lower electrode is formed on the conductive region. A lower electrode is formed by oxidizing an upper portion of the preliminary lower electrode. A phase-change material layer is formed on the lower electrode.
摘要翻译：在制造可变电阻存储器件的方法中，提供了包括导电区域的衬底，并且在导电区域上形成预备下电极。通过氧化预备下电极的上部形成下电极。在下电极上形成相变材料层。

2. 发明授权

US07759159B2 Variable resistance non-volatile memory cells and methods of fabricating same 有权
标题翻译：可变电阻非易失性存储单元及其制造方法
公开(公告)号：US07759159B2
公开(公告)日：2010-07-20
申请号：US11848379
申请日：2007-08-31
申请人： Gyu-Hwan Oh , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Nak-Hyun Lim , Hyun-Suk Lee
发明人： Gyu-Hwan Oh , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Nak-Hyun Lim , Hyun-Suk Lee
IPC分类号： H01L21/00 , H01L21/20 , H01L47/00 , H01L21/02
CPC分类号： H01L45/06 , G11C13/0004 , H01L27/2409 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer.
摘要翻译：公开了制造集成电路存储单元和集成电路存储单元的方法。可以通过在导电结构的上表面上形成欧姆层并沿着绝缘层中的开口的侧壁的至少一部分远离结构延伸来制造集成电路存储单元。在欧姆层上形成电极层。在绝缘层上形成可变电阻率材料并与电极层电连接。

3. 发明申请

US20090098733A1 METHOD OF FORMING METAL LAYER USED IN THE FABRICATION OF SEMICONDUCTOR DEVICE 有权
标题翻译：在半导体器件的制造中形成金属层的方法
公开(公告)号：US20090098733A1
公开(公告)日：2009-04-16
申请号：US12100374
申请日：2008-04-09
申请人： Hyun-Suk Lee , Hyun-Young Kim , Kwang-Jin Moon
发明人： Hyun-Suk Lee , Hyun-Young Kim , Kwang-Jin Moon
IPC分类号： H01L21/285
CPC分类号： H01L21/76846 , C23C16/14 , C23C16/4408 , C23C16/45523 , C23C16/509 , H01L21/28556 , H01L21/76843
摘要： A method of forming a metal layer on the conductive region of a semiconductor device includes concurrently supplying a mixture gas including a hydrogen gas and a metal chloride compound gas, and a purge gas into a chamber having a sealed space for a predetermined time, thereby forming a first metal layer on the semiconductor substrate, using a plasma enhanced chemical vapor deposition (PECVD) method. The hydrogen gas and metal chloride gases are thereafter alternately supplied for a predetermined time while the purge gas is continuously supplied into the chamber, thereby forming a second metal layer on the first metal layer, using a PECVD method. Deterioration of semiconductor devices due to high heat by a conventional CVD method can be prevented using a PECVD method as a low temperature process, thereby improving a production yield.
摘要翻译：在半导体器件的导电区域上形成金属层的方法包括：将包含氢气和金属氯化物复合气体的混合气体以及吹扫气体同时供给到具有密封空间的室中预定时间，从而形成使用等离子体增强化学气相沉积（PECVD）方法在半导体衬底上的第一金属层。然后，将氢气和金属氯化物气体交替供给预定时间，同时将净化气体连续地供应到室中，从而使用PECVD方法在第一金属层上形成第二金属层。使用PECVD法作为低温处理可以防止由于常规CVD法导致的高热导致的半导体器件劣化，从而提高了生产率。

4. 发明授权

US07416981B2 Method of forming metal layer used in the fabrication of semiconductor device 有权
标题翻译：用于制造半导体器件的金属层的形成方法
公开(公告)号：US07416981B2
公开(公告)日：2008-08-26
申请号：US11245366
申请日：2005-10-05
申请人： Hyun-Suk Lee , Hyun-Young Kim , Kwang-Jin Moon
发明人： Hyun-Suk Lee , Hyun-Young Kim , Kwang-Jin Moon
IPC分类号： H01L21/44
CPC分类号： H01L21/76846 , C23C16/14 , C23C16/4408 , C23C16/45523 , C23C16/509 , H01L21/28556 , H01L21/76843
摘要： A method of forming a metal layer on the conductive region of a semiconductor device includes concurrently supplying a mixture gas including a hydrogen gas and a metal chloride compound gas, and a purge gas into a chamber having a sealed space for a predetermined time, thereby forming a first metal layer on the semiconductor substrate, using a plasma enhanced chemical vapor deposition (PECVD) method. The hydrogen gas and metal chloride gases are thereafter alternately supplied for a predetermined time while the purge gas is continuously supplied into the chamber, thereby forming a second metal layer on the first metal layer, using a PECVD method. Deterioration of semiconductor devices due to high heat by a conventional CVD method can be prevented using a PECVD method as a low temperature process, thereby improving a production yield.
摘要翻译：在半导体器件的导电区域上形成金属层的方法包括：将包含氢气和金属氯化物复合气体的混合气体以及吹扫气体同时供给到具有密封空间的室中预定时间，从而形成使用等离子体增强化学气相沉积（PECVD）方法在半导体衬底上的第一金属层。然后，将氢气和金属氯化物气体交替供给预定时间，同时将净化气体连续地供应到室中，从而使用PECVD方法在第一金属层上形成第二金属层。使用PECVD法作为低温处理可以防止由于常规CVD法导致的高热导致的半导体器件劣化，从而提高了生产率。

5. 发明申请

US20080185624A1 STORAGE CAPACITORS FOR SEMICONDUCTOR DEVICES 审中-公开
标题翻译：半导体器件存储电容器
公开(公告)号：US20080185624A1
公开(公告)日：2008-08-07
申请号：US12100042
申请日：2008-04-09
申请人： Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
发明人： Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
IPC分类号： H01L29/94
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/75
摘要： Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening there through on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.
摘要翻译：形成存储电容器的方法包括在半导体衬底上形成具有开口的层间绝缘层，在开口中形成接触插塞，在层间绝缘层和接触插塞上形成模制氧化物层，选择性地去除部分模制氧化物层以在接触塞上方形成凹陷，在凹陷的底表面和侧表面上形成钛层，在钛层上形成氮化钛层，并在氮化钛层上形成氮氧化钛层。存储电容器包括半导体衬底，在衬底上具有接触插塞的层间绝缘层，以及包括钛硅化物层的接触插塞上的存储电极，硅化钛层上的氮化钛层和氧化钛氮化物层在氮化钛层上。

6. 发明申请

US20060084263A1 Method of forming metal layer used in the fabrication of semiconductor device 有权
标题翻译：用于制造半导体器件的金属层的形成方法
公开(公告)号：US20060084263A1
公开(公告)日：2006-04-20
申请号：US11245366
申请日：2005-10-05
申请人： Hyun-Suk Lee , Hyun-Young Kim , Kwang-Jin Moon
发明人： Hyun-Suk Lee , Hyun-Young Kim , Kwang-Jin Moon
IPC分类号： H01L21/44
CPC分类号： H01L21/76846 , C23C16/14 , C23C16/4408 , C23C16/45523 , C23C16/509 , H01L21/28556 , H01L21/76843
摘要： A method of forming a metal layer on the conductive region of a semiconductor device includes concurrently supplying a mixture gas including a hydrogen gas and a metal chloride compound gas, and a purge gas into a chamber having a sealed space for a predetermined time, thereby forming a first metal layer on the semiconductor substrate, using a plasma enhanced chemical vapor deposition (PECVD) method. The hydrogen gas and metal chloride gases are thereafter alternately supplied for a predetermined time while the purge gas is continuously supplied into the chamber, thereby forming a second metal layer on the first metal layer, using a PECVD method. Deterioration of semiconductor devices due to high heat by a conventional CVD method can be prevented using a PECVD method as a low temperature process, thereby improving a production yield.
摘要翻译：在半导体器件的导电区域上形成金属层的方法包括：将包含氢气和金属氯化物复合气体的混合气体以及吹扫气体同时供给到具有密封空间的室中预定时间，从而形成使用等离子体增强化学气相沉积（PECVD）方法在半导体衬底上的第一金属层。然后，将氢气和金属氯化物气体交替供给预定时间，同时将净化气体连续地供应到室中，从而使用PECVD方法在第一金属层上形成第二金属层。使用PECVD法作为低温处理可以防止由于常规CVD法导致的高热导致的半导体器件劣化，从而提高了生产率。

7. 发明授权

US08138490B2 Variable resistance non-volatile memory cells and methods of fabricating same 有权
标题翻译：可变电阻非易失性存储单元及其制造方法
公开(公告)号：US08138490B2
公开(公告)日：2012-03-20
申请号：US12796084
申请日：2010-06-08
申请人： Gyu-Hwan Oh , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Nak-Hyun Lim , Hyun-Suk Lee
发明人： Gyu-Hwan Oh , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Nak-Hyun Lim , Hyun-Suk Lee
IPC分类号： H01L47/00 , H01L27/108 , H01L29/94 , H01L31/032
CPC分类号： H01L45/06 , G11C13/0004 , H01L27/2409 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer.
摘要翻译：公开了制造集成电路存储单元和集成电路存储单元的方法。可以通过在导电结构的上表面上形成欧姆层并沿着绝缘层中的开口的侧壁的至少一部分远离结构延伸来制造集成电路存储单元。在欧姆层上形成电极层。在绝缘层上形成可变电阻率材料并与电极层电连接。

8. 发明授权

US07662717B2 Method of forming metal layer used in the fabrication of semiconductor device 有权
标题翻译：用于制造半导体器件的金属层的形成方法
公开(公告)号：US07662717B2
公开(公告)日：2010-02-16
申请号：US12100374
申请日：2008-04-09
申请人： Hyun-Suk Lee , Hyun-Young Kim , Kwang-Jin Moon
发明人： Hyun-Suk Lee , Hyun-Young Kim , Kwang-Jin Moon
IPC分类号： H01L21/44
CPC分类号： H01L21/76846 , C23C16/14 , C23C16/4408 , C23C16/45523 , C23C16/509 , H01L21/28556 , H01L21/76843
摘要： A method of forming a metal layer on the conductive region of a semiconductor device includes concurrently supplying a mixture gas including a hydrogen gas and a metal chloride compound gas, and a purge gas into a chamber having a sealed space for a predetermined time, thereby forming a first metal layer on the semiconductor substrate, using a plasma enhanced chemical vapor deposition (PECVD) method. The hydrogen gas and metal chloride gases are thereafter alternately supplied for a predetermined time while the purge gas is continuously supplied into the chamber, thereby forming a second metal layer on the first metal layer, using a PECVD method. Deterioration of semiconductor devices due to high heat by a conventional CVD method can be prevented using a PECVD method as a low temperature process, thereby improving a production yield.
摘要翻译：在半导体器件的导电区域上形成金属层的方法包括：将包含氢气和金属氯化物复合气体的混合气体以及吹扫气体同时供给到具有密封空间的室中预定时间，从而形成使用等离子体增强化学气相沉积（PECVD）方法在半导体衬底上的第一金属层。然后，将氢气和金属氯化物气体交替供给预定时间，同时将净化气体连续地供应到室中，从而使用PECVD方法在第一金属层上形成第二金属层。使用PECVD法作为低温处理可以防止由于常规CVD法导致的高热导致的半导体器件劣化，从而提高了生产率。

9. 发明授权

US07480275B2 Power control device and method for controlling a reverse link common channel in a CDMA communication system 有权
标题翻译：用于在CDMA通信系统中控制反向链路公共信道的功率控制装置和方法
公开(公告)号：US07480275B2
公开(公告)日：2009-01-20
申请号：US10262102
申请日：2002-09-30
申请人： Hi-Chan Moon , Jin-Woo Choi , Young-Ky Kim , Jae-Min Ahn , Hyun-Suk Lee
发明人： Hi-Chan Moon , Jin-Woo Choi , Young-Ky Kim , Jae-Min Ahn , Hyun-Suk Lee
IPC分类号： H04B7/216
CPC分类号： H04W52/14 , H04B1/707 , H04W52/08 , H04W52/146 , H04W52/322 , H04W52/325 , H04W52/44 , H04W52/50 , H04W52/54 , H04W52/58
摘要： A common power control channel transmission device for a base station in a CDMA communication system is provided having a selector for receiving power control commands to be transmitted to multiple subscribers and multiplexing the received power control commands; and a spreading modulator for spreading an output of the selector by multiplying the output of the selector by a spreading sequence. The common power control channel transmission device can be used to control power of a reverse link common channel. For the power control of the reverse link common channel, the base station receives a signal from a mobile station via the reverse link common channel, and transmits to the mobile station a power control command for controlling a transmission power of the reverse link common channel according to a measured strength of the received signal.
摘要翻译：提供了一种用于CDMA通信系统中的基站的公共功率控制信道传输设备，具有用于接收要发送给多个用户的功率控制命令并对接收到的功率控制命令进行多路复用的选择器; 以及扩展调制器，用于通过将选择器的输出乘以扩展序列来扩展选择器的输出。公共功率控制信道传输设备可用于控制反向链路公共信道的功率。对于反向链路公共信道的功率控制，基站经由反向链路公共信道从移动台接收信号，并向移动台发送用于控制反向链路公共信道的发送功率的功率控制指令，到接收信号的测量强度。

10. 发明申请

US20080308784A1 VARIABLE RESISTANCE NON-VOLATILE MEMORY CELLS AND METHODS OF FABRICATING SAME 有权
标题翻译：可变电阻非挥发性记忆细胞及其制备方法
公开(公告)号：US20080308784A1
公开(公告)日：2008-12-18
申请号：US11848379
申请日：2007-08-31
申请人： Gyu-Hwan Oh , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Nak-Hyun Lim , Hyun-Suk Lee
发明人： Gyu-Hwan Oh , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Nak-Hyun Lim , Hyun-Suk Lee
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , G11C13/0004 , H01L27/2409 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer.
摘要翻译：公开了制造集成电路存储单元和集成电路存储单元的方法。可以通过在导电结构的上表面上形成欧姆层并沿着绝缘层中的开口的侧壁的至少一部分远离结构延伸来制造集成电路存储单元。在欧姆层上形成电极层。在绝缘层上形成可变电阻率材料并与电极层电连接。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式