专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5952704A Inductor devices using substrate biasing technique 失效
标题翻译：使用衬底偏置技术的电感器件
公开(公告)号：US5952704A
公开(公告)日：1999-09-14
申请号：US842869
申请日：1997-04-17
申请人： Hyun-Kyu Yu , Min Park , Cheon-Soo Kim , Kee-Soo Nam
发明人： Hyun-Kyu Yu , Min Park , Cheon-Soo Kim , Kee-Soo Nam
IPC分类号： H01F17/00 , H01L21/02 , H01L29/00
CPC分类号： H01L28/10 , H01F2017/0046
摘要： Inductors used for impedance matching in the radio frequency integrated circuits is disclosed. In the integrated inductor device according to the present invention, an additional electrode is arranged in surroundings of an inductor metal line, and the reverse bias voltage is applied to the region between the substrate and the electrode so as to form a depletion layer. Therefore, the substrate biasing is effected and thus an inductor having improved performance can be formed by decreasing the parasitic capacitance between the inductor metal line and the substrate. The present invention can also be applied to another semiconductor device having metal lines and pads.
摘要翻译：公开了用于射频集成电路中的阻抗匹配的电感器。在根据本发明的集成电感器件中，在电感器金属线的周围布置附加电极，并且将反向偏置电压施加到衬底和电极之间的区域以形成耗尽层。因此，进行衬底偏置，因此可以通过减小电感器金属线和衬底之间的寄生电容来形成具有改进性能的电感器。本发明也可以应用于具有金属线和焊盘的另一半导体器件。

2. 发明授权

US5793096A MOS transistor embedded inductor device using multi-layer metallization technology 失效
标题翻译： MOS晶体管嵌入式电感器件采用多层金属化技术
公开(公告)号：US5793096A
公开(公告)日：1998-08-11
申请号：US846422
申请日：1997-04-30
申请人： Hyun-Kyu Yu , Cheon-Soo Kim , Kee-Soo Nam
发明人： Hyun-Kyu Yu , Cheon-Soo Kim , Kee-Soo Nam
IPC分类号： H01L27/02 , H01L27/06 , H01L29/00
CPC分类号： H01L27/0617 , H01F2021/125
摘要： An inductor device with a MOS transistor internally installed is disclosed, in which an inductor can be arbitrarily connected in series or in parallel to the respective terminals of MOS transistors by applying a multi-layer wiring technique, thereby reducing the chip area. Within an inductor structure, MOS transistors which have an active region width of W .mu.m are formed in the number of n, and an inductor wire is connected to an arbitrary terminal of the MOS transistors by employing a multi-layer metal wiring process. Thus the inductor is connected to an arbitrary terminal of the MOS transistors in series. Thus an inductor device in which MOS transistors having a channel width of W.times.n .mu.m are internally installed is formed.
摘要翻译：公开了一种内置MOS晶体管的电感器件，其中通过施加多层布线技术，电感器可以与MOS晶体管的各个端子串联或并联连接，从而减小芯片面积。在电感器结构中，以n个数量形成有效区宽度为W m m的MOS晶体管，并且通过采用多层金属布线工艺将电感器线连接到MOS晶体管的任意端。因此，电感器串联连接到MOS晶体管的任意端子。因此，形成其内部安装有沟道宽度为Wxnμm的MOS晶体管的电感器件。

3. 发明授权

US07773953B2 Wireless transceiving apparatus for variability of signal processing band 有权
标题翻译：用于信号处理频带变化的无线收发装置
公开(公告)号：US07773953B2
公开(公告)日：2010-08-10
申请号：US11224811
申请日：2005-09-12
申请人： Seon-Ho Han , Mun-Yang Park , Hyun-Kyu Yu , Cheon-Soo Kim
发明人： Seon-Ho Han , Mun-Yang Park , Hyun-Kyu Yu , Cheon-Soo Kim
IPC分类号： H04B1/40
CPC分类号： H04B1/405
摘要： Provided is a wireless transceiving apparatus for variability of signal processing band, in which at least one resonator of an analog processor and a VCO are simultaneously controlled using a frequency synthesizer, and a frequency of the VCO and a resonance frequency of the analog processor are controlled to have a rational number ratio, thereby capable of varying the signal processing band. The wireless transceiving apparatus includes: an analog processor having a plurality of resonators on a path of transmission/reception signals, for performing analog signal processing; a digital processor for performing digital signal processing on an output signal of the analog processor or data to be transmitted to the analog processor; and a frequency synthesizer for providing a local oscillation (LO) frequency and a controlling signal to the resonators of the analog processor so as to vary a signal processing band of the analog processor.
摘要翻译：提供了一种用于信号处理频带的可变性的无线收发装置，其中使用频率合成器同时控制模拟处理器和VCO的至少一个谐振器，并且控制VCO的频率和模拟处理器的谐振频率具有有理数比，由此能够改变信号处理频带。无线收发装置包括：模拟处理器，在发送/接收信号的路径上具有多个谐振器，用于执行模拟信号处理; 用于对模拟处理器的输出信号执行数字信号处理的数字处理器或将被发送到模拟处理器的数据; 以及用于向模拟处理器的谐振器提供本地振荡（LO）频率和控制信号以便改变模拟处理器的信号处理频带的频率合成器。

4. 发明授权

US07372352B2 Transformer for varying inductance value 失效
标题翻译：变压器用于变化电感值
公开(公告)号：US07372352B2
公开(公告)日：2008-05-13
申请号：US11213552
申请日：2005-08-26
申请人： Young-Jae Lee , Cheon-Soo Kim , Hyun-Kyu Yu
发明人： Young-Jae Lee , Cheon-Soo Kim , Hyun-Kyu Yu
IPC分类号： H01F5/00
CPC分类号： H01F21/12 , H01F17/0006 , H01F19/08 , H01F21/08 , H01F2021/125 , H01L23/5227 , H01L2924/0002 , H01L2924/00
摘要： There is provided a transformer for varying an inductance value, which adjusts a tuning range of the inductance without decrease of the inductor's capability by selectively connecting switches to inductors and controls an amount of magnetic flux. And the transformer consists of multiple inductors formed on a semiconductor substrate, which including N number of metal lines, N number of ports made by twisting the metal lines in the form of a symmetric circuit, wherein a certain number of ports among the N number of ports, which are connected to switch elements.
摘要翻译：提供了用于改变电感值的变压器，其通过选择性地将开关连接到电感器并控制磁通量来调节电感的调谐范围而不降低电感器的能力。并且，所述变压器由形成在半导体基板上的多个电感器组成，所述多个电感器包括N个金属线，N个通过以对称电路的形式扭转所述金属线而制成的端口，其中，N个端口，连接到交换机元件。

5. 发明申请

US20060135086A1 Wireless transceiving apparatus for variability of signal processing band 有权
标题翻译：用于信号处理频带变化的无线收发装置
公开(公告)号：US20060135086A1
公开(公告)日：2006-06-22
申请号：US11224811
申请日：2005-09-12
申请人： Seon-Ho Han , Mun-Yang Park , Hyun-Kyu Yu , Cheon-Soo Kim
发明人： Seon-Ho Han , Mun-Yang Park , Hyun-Kyu Yu , Cheon-Soo Kim
IPC分类号： H04B1/46
CPC分类号： H04B1/405
摘要： Provided is a wireless transceiving apparatus for variability of signal processing band, in which at least one resonator of an analog processor and a VCO are simultaneously controlled using a frequency synthesizer, and a frequency of the VCO and a resonance frequency of the analog processor are controlled to have a rational number ratio, thereby capable of varying the signal processing band. The wireless transceiving apparatus includes: an analog processor having a plurality of resonators on a path of transmission/reception signals, for performing analog signal processing; a digital processor for performing digital signal processing on an output signal of the analog processor or data to be transmitted to the analog processor; and a frequency synthesizer for providing a local oscillation (LO) frequency and a controlling signal to the resonators of the analog processor so as to vary a signal processing band of the analog processor.
摘要翻译：提供了一种用于信号处理频带的可变性的无线收发装置，其中使用频率合成器同时控制模拟处理器和VCO的至少一个谐振器，并且控制VCO的频率和模拟处理器的谐振频率具有有理数比，从而能够改变信号处理频带。无线收发装置包括：模拟处理器，在发送/接收信号的路径上具有多个谐振器，用于执行模拟信号处理; 用于对模拟处理器的输出信号执行数字信号处理的数字处理器或将被发送到模拟处理器的数据; 以及用于向模拟处理器的谐振器提供本地振荡（LO）频率和控制信号以便改变模拟处理器的信号处理频带的频率合成器。

6. 发明申请

US20060132274A1 Transformer for varying inductance value 失效
标题翻译：变压器用于变化电感值
公开(公告)号：US20060132274A1
公开(公告)日：2006-06-22
申请号：US11213552
申请日：2005-08-26
申请人： Young-Jae Lee , Cheon-Soo Kim , Hyun-Kyu Yu
发明人： Young-Jae Lee , Cheon-Soo Kim , Hyun-Kyu Yu
IPC分类号： H01F5/00
CPC分类号： H01F21/12 , H01F17/0006 , H01F19/08 , H01F21/08 , H01F2021/125 , H01L23/5227 , H01L2924/0002 , H01L2924/00
摘要： There is provided a transformer for varying an inductance value, which adjusts a tuning range of the inductance without decrease of the inductor's capability by selectively connecting switches to inductors and controls an amount of magnetic flux. And the transformer consists of multiple inductors formed on a semiconductor substrate, which including N number of metal lines, N number of ports made by twisting the metal lines in the form of a symmetric circuit, wherein a certain number of ports among the N number of ports, which are connected to switch elements.
摘要翻译：提供了用于改变电感值的变压器，其通过选择性地将开关连接到电感器并控制磁通量来调节电感的调谐范围而不降低电感器的能力。并且，所述变压器由形成在半导体基板上的多个电感器组成，所述多个电感器包括N个金属线，N个通过以对称电路的形式扭转所述金属线而制成的端口，其中，N个端口，连接到交换机元件。

7. 发明授权

US06274920B1 Integrated inductor device and method for fabricating the same 有权
标题翻译：集成电感器件及其制造方法
公开(公告)号：US06274920B1
公开(公告)日：2001-08-14
申请号：US09448729
申请日：1999-11-24
申请人： Min Park , Hyun-Kyu Yu , Cheon-Soo Kim , Chung-Hwan Kim , Dae-Yong Kim
发明人： Min Park , Hyun-Kyu Yu , Cheon-Soo Kim , Chung-Hwan Kim , Dae-Yong Kim
IPC分类号： H01L2900
CPC分类号： H01L28/10 , H01L27/08
摘要： A method for fabricating an inductor device includes the steps of forming a plurality of trenches in a substrate by selectively etching the substrate, implanting dopants into sidewalls and bottom portion of each trench, forming an oxide layer by oxidizing the trenches and the substrate and simultaneously forming a doped layer in the surroundings of the trenches by diffusing the dopants into the substrate, and forming a dielectric layer on a resultant structure to fill the entrance of the trenches, thereby forming air-gap layers inside the trenches, thereby reducing a parasitic capacitance and a magnetic coupling.
摘要翻译：一种用于制造电感器件的方法包括以下步骤：通过选择性蚀刻衬底在衬底中形成多个沟槽，将掺杂剂注入每个沟槽的侧壁和底部，通过氧化沟槽和衬底形成氧化物层并同时形成通过将掺杂剂扩散到衬底中并在所得结构上形成介电层以填充沟槽的入口，从而在沟槽内形成气隙层，从而减小寄生电容，并且磁耦合。

8. 发明授权

US07352247B2 Triple cascode power amplifier of inner parallel configuration with dynamic gate bias technique 失效
标题翻译：具有动态门偏置技术的内部并联配置的三重共源共栅功率放大器
公开(公告)号：US07352247B2
公开(公告)日：2008-04-01
申请号：US11843042
申请日：2007-08-22
申请人： Hyoung-Seok Oh , Hyun-Kyu Yu , Mun-Yang Park , Cheon-Soo Kim
发明人： Hyoung-Seok Oh , Hyun-Kyu Yu , Mun-Yang Park , Cheon-Soo Kim
IPC分类号： H03F3/04
CPC分类号： H03F3/191 , H03F1/223 , H03F1/301 , H03F3/72 , H03F2200/27 , H03F2203/7206
摘要： Provided is a power amplifier which fits to a deep-submicron technology in radio frequency wireless communication. The power amplifier includes a cascode including a first transistor which receives and amplifies an input signal, and a second transistor which is connected to the first transistor in series and operated by a DC bias voltage; a third transistor which is connected between the cascode and an output end, operated by a dynamic gate bias and outputting a signal; and a voltage divider which includes first and second capacitors that are connected between the output end, i.e. a drain of the third transistor, and a ground in series, and provides the dynamic bias to a gate of the third transistor.
摘要翻译：提供了一种适用于射频无线通信中的深亚微米技术的功率放大器。功率放大器包括：共源共栅，包括接收和放大输入信号的第一晶体管;以及第二晶体管，其串联连接到第一晶体管并由DC偏置电压驱动; 连接在共源共栅和输出端之间的第三晶体管，由动态栅极偏置操作并输出信号; 以及分压器，其包括连接在输出端（即，第三晶体管的漏极）和串联的地之间的第一和第二电容器，并且向第三晶体管的栅极提供动态偏置。

9. 发明授权

US07276976B2 Triple cascode power amplifier of inner parallel configuration with dynamic gate bias technique 有权
标题翻译：具有动态门偏置技术的内部并联配置的三重共源共栅功率放大器
公开(公告)号：US07276976B2
公开(公告)日：2007-10-02
申请号：US11267243
申请日：2005-11-04
申请人： Hyoung-Seok Oh , Hyun-Kyu Yu , Mun-Yang Park , Cheon-Soo Kim
发明人： Hyoung-Seok Oh , Hyun-Kyu Yu , Mun-Yang Park , Cheon-Soo Kim
IPC分类号： H03F3/04
CPC分类号： H03F3/191 , H03F1/223 , H03F1/301 , H03F3/72 , H03F2200/27 , H03F2203/7206
摘要： Provided is a power amplifier which fits to a deep-submicron technology in radio frequency wireless communication. The power amplifier includes a cascode including a first transistor which receives and amplifies an input signal, and a second transistor which is connected to the first transistor in series and operated by a DC bias voltage; a third transistor which is connected between the cascode and an output end, operated by a dynamic gate bias and outputting a signal; and a voltage divider which includes first and second capacitors that are connected between the output end, i.e. a drain of the third transistor, and a ground in series, and provides the dynamic bias to a gate of the third transistor.
摘要翻译：提供了一种适用于射频无线通信中的深亚微米技术的功率放大器。功率放大器包括：共源共栅，包括接收和放大输入信号的第一晶体管;以及第二晶体管，其串联连接到第一晶体管并由DC偏置电压驱动; 连接在共源共栅和输出端之间的第三晶体管，由动态栅极偏置操作并输出信号; 以及分压器，其包括连接在输出端（即，第三晶体管的漏极）和串联的地之间的第一和第二电容器，并且向第三晶体管的栅极提供动态偏置。

10. 发明申请

US20060119435A1 Triple cascode power amplifier of inner parallel configuration with dynamic gate bias technique 有权
标题翻译：具有动态门偏置技术的内部并联配置的三重共源共栅功率放大器
公开(公告)号：US20060119435A1
公开(公告)日：2006-06-08
申请号：US11267243
申请日：2005-11-04
申请人： Hyoung-Seok Oh , Hyun-Kyu Yu , Mun-Yang Park , Cheon-Soo Kim
发明人： Hyoung-Seok Oh , Hyun-Kyu Yu , Mun-Yang Park , Cheon-Soo Kim
IPC分类号： H03F1/22
CPC分类号： H03F3/191 , H03F1/223 , H03F1/301 , H03F3/72 , H03F2200/27 , H03F2203/7206
摘要： Provided is a power amplifier which fits to a deep-submicron technology in radio frequency wireless communication. The power amplifier includes a cascode including a first transistor which receives and amplifies an input signal, and a second transistor which is connected to the first transistor in series and operated by a DC bias voltage; a third transistor which is connected between the cascode and an output end, operated by a dynamic gate bias and outputting a signal; and a voltage divider which includes first and second capacitors that are connected between the output end, i.e. a drain of the third transistor, and a ground in series, and provides the dynamic bias to a gate of the third transistor.
摘要翻译：提供了一种适用于射频无线通信中的深亚微米技术的功率放大器。功率放大器包括：共源共栅，包括接收和放大输入信号的第一晶体管;以及第二晶体管，其串联连接到第一晶体管并由DC偏置电压驱动; 连接在共源共栅和输出端之间的第三晶体管，由动态栅极偏置操作并输出信号; 以及分压器，其包括连接在输出端（即，第三晶体管的漏极）和串联的地之间的第一和第二电容器，并且向第三晶体管的栅极提供动态偏置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式