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1. 发明授权

US07883970B2 Semiconductor device having decoupling capacitor and method of fabricating the same 有权
标题翻译：具有去耦电容器的半导体器件及其制造方法
公开(公告)号：US07883970B2
公开(公告)日：2011-02-08
申请号：US12343035
申请日：2008-12-23
申请人： Hyun-Ki Kim , Jung-Hwa Lee , Ji-Young Kim
发明人： Hyun-Ki Kim , Jung-Hwa Lee , Ji-Young Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/945 , H01L27/0207 , H01L27/0805 , H01L27/10861 , H01L27/10876 , H01L27/10894 , H01L29/66181 , H01L29/66621 , H01L29/78
摘要： A semiconductor device having a decoupling capacitor and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate having a cell region, a first peripheral circuit region, and a second peripheral circuit region. At least one channel trench is disposed in the cell region of the semiconductor substrate. At least one first capacitor trench is disposed in the first peripheral circuit region of the semiconductor substrate, and at least one second capacitor trench is disposed in the second peripheral circuit region of the semiconductor substrate. A gate electrode is disposed in the cell region of the semiconductor substrate and fills the channel trench. A first upper electrode is disposed in the first peripheral circuit region of the semiconductor substrate and fills at least the first capacitor trench. A second upper electrode is disposed in the second peripheral circuit region of the semiconductor substrate and fills at least the second capacitor trench. A gate dielectric layer is interposed between the channel trench and the gate electrode. A first dielectric layer is interposed between the semiconductor substrate of the first peripheral circuit region having the first capacitor trench and the first upper electrode and has the same thickness as the gate dielectric layer. A second dielectric layer is interposed between the semiconductor substrate of the second peripheral circuit region having the second capacitor trench and the second upper electrode and has a different thickness from the first dielectric layer.
摘要翻译：提供具有去耦电容器的半导体器件及其制造方法。半导体器件包括具有单元区域，第一外围电路区域和第二外围电路区域的半导体衬底。至少一个通道沟槽设置在半导体衬底的单元区域中。至少一个第一电容器沟槽设置在半导体衬底的第一外围电路区域中，并且至少一个第二电容器沟槽设置在半导体衬底的第二外围电路区域中。栅电极设置在半导体衬底的单元区域中并填充沟槽。第一上电极设置在半导体衬底的第一外围电路区域中，并且填充至少第一电容器沟槽。第二上电极设置在半导体衬底的第二外围电路区域中，并且填充至少第二电容器沟槽。栅极电介质层介于通道沟槽和栅电极之间。在具有第一电容器沟槽的第一外围电路区域的半导体衬底和第一上电极之间插入第一电介质层，并且具有与栅极电介质层相同的厚度。在具有第二电容器沟槽的第二外围电路区域的半导体衬底和第二上部电极之间插入第二电介质层，并且具有与第一电介质层不同的厚度。

2. 发明申请

US20070052013A1 Semiconductor device having decoupling capacitor and method of fabricating the same 失效
标题翻译：具有去耦电容器的半导体器件及其制造方法
公开(公告)号：US20070052013A1
公开(公告)日：2007-03-08
申请号：US11449959
申请日：2006-06-09
申请人： Hyun-Ki Kim , Jung-Hwa Lee , Ji-Young Kim
发明人： Hyun-Ki Kim , Jung-Hwa Lee , Ji-Young Kim
IPC分类号： H01L29/94
CPC分类号： H01L29/945 , H01L27/0207 , H01L27/0805 , H01L27/10861 , H01L27/10876 , H01L27/10894 , H01L29/66181 , H01L29/66621 , H01L29/78
摘要： A semiconductor device having a decoupling capacitor and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate having a cell region, a first peripheral circuit region, and a second peripheral circuit region. At least one channel trench is disposed in the cell region of the semiconductor substrate. At least one first capacitor trench is disposed in the first peripheral circuit region of the semiconductor substrate, and at least one second capacitor trench is disposed in the second peripheral circuit region of the semiconductor substrate. A gate electrode is disposed in the cell region of the semiconductor substrate and fills the channel trench. A first upper electrode is disposed in the first peripheral circuit region of the semiconductor substrate and fills at least the first capacitor trench. A second upper electrode is disposed in the second peripheral circuit region of the semiconductor substrate and fills at least the second capacitor trench. A gate dielectric layer is interposed between the channel trench and the gate electrode. A first dielectric layer is interposed between the semiconductor substrate of the first peripheral circuit region having the first capacitor trench and the first upper electrode and has the same thickness as the gate dielectric layer. A second dielectric layer is interposed between the semiconductor substrate of the second peripheral circuit region having the second capacitor trench and the second upper electrode and has a different thickness from the first dielectric layer.
摘要翻译：提供具有去耦电容器的半导体器件及其制造方法。半导体器件包括具有单元区域，第一外围电路区域和第二外围电路区域的半导体衬底。至少一个通道沟槽设置在半导体衬底的单元区域中。至少一个第一电容器沟槽设置在半导体衬底的第一外围电路区域中，并且至少一个第二电容器沟槽设置在半导体衬底的第二外围电路区域中。栅电极设置在半导体衬底的单元区域中并填充沟槽。第一上电极设置在半导体衬底的第一外围电路区域中，并且填充至少第一电容器沟槽。第二上电极设置在半导体衬底的第二外围电路区域中，并且填充至少第二电容器沟槽。栅极电介质层介于通道沟槽和栅电极之间。在具有第一电容器沟槽的第一外围电路区域的半导体衬底和第一上电极之间插入第一电介质层，并且具有与栅极电介质层相同的厚度。在具有第二电容器沟槽的第二外围电路区域的半导体衬底和第二上部电极之间插入第二电介质层，并且具有与第一电介质层不同的厚度。

3. 发明申请

US20090111232A1 SEMICONDUCTOR DEVICE HAVING DECOUPLING CAPACITOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有解除电容器的半导体器件及其制造方法
公开(公告)号：US20090111232A1
公开(公告)日：2009-04-30
申请号：US12343035
申请日：2008-12-23
申请人： Hyun-Ki Kim , Jung-Hwa Lee , Ji-Young Kim
发明人： Hyun-Ki Kim , Jung-Hwa Lee , Ji-Young Kim
IPC分类号： H01L21/762
CPC分类号： H01L29/945 , H01L27/0207 , H01L27/0805 , H01L27/10861 , H01L27/10876 , H01L27/10894 , H01L29/66181 , H01L29/66621 , H01L29/78
摘要： A semiconductor device having a decoupling capacitor and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate having a cell region, a first peripheral circuit region, and a second peripheral circuit region. At least one channel trench is disposed in the cell region of the semiconductor substrate. At least one first capacitor trench is disposed in the first peripheral circuit region of the semiconductor substrate, and at least one second capacitor trench is disposed in the second peripheral circuit region of the semiconductor substrate. A gate electrode is disposed in the cell region of the semiconductor substrate and fills the channel trench. A first upper electrode is disposed in the first peripheral circuit region of the semiconductor substrate and fills at least the first capacitor trench. A second upper electrode is disposed in the second peripheral circuit region of the semiconductor substrate and fills at least the second capacitor trench. A gate dielectric layer is interposed between the channel trench and the gate electrode. A first dielectric layer is interposed between the semiconductor substrate of the first peripheral circuit region having the first capacitor trench and the first upper electrode and has the same thickness as the gate dielectric layer. A second dielectric layer is interposed between the semiconductor substrate of the second peripheral circuit region having the second capacitor trench and the second upper electrode and has a different thickness from the first dielectric layer.
摘要翻译：提供具有去耦电容器的半导体器件及其制造方法。半导体器件包括具有单元区域，第一外围电路区域和第二外围电路区域的半导体衬底。至少一个通道沟槽设置在半导体衬底的单元区域中。至少一个第一电容器沟槽设置在半导体衬底的第一外围电路区域中，并且至少一个第二电容器沟槽设置在半导体衬底的第二外围电路区域中。栅电极设置在半导体衬底的单元区域中并填充沟槽。第一上电极设置在半导体衬底的第一外围电路区域中，并且填充至少第一电容器沟槽。第二上电极设置在半导体衬底的第二外围电路区域中，并且填充至少第二电容器沟槽。栅极电介质层介于通道沟槽和栅电极之间。在具有第一电容器沟槽的第一外围电路区域的半导体衬底和第一上电极之间插入第一电介质层，并且具有与栅极电介质层相同的厚度。在具有第二电容器沟槽的第二外围电路区域的半导体衬底和第二上部电极之间插入第二电介质层，并且具有与第一电介质层不同的厚度。

4. 发明授权

US07485911B2 Semiconductor device having decoupling capacitor and method of fabricating the same 失效
标题翻译：具有去耦电容器的半导体器件及其制造方法
公开(公告)号：US07485911B2
公开(公告)日：2009-02-03
申请号：US11449959
申请日：2006-06-09
申请人： Hyun-Ki Kim , Jung-Hwa Lee , Ji-Young Kim
发明人： Hyun-Ki Kim , Jung-Hwa Lee , Ji-Young Kim
IPC分类号： H01L27/108 , H01L29/76
CPC分类号： H01L29/945 , H01L27/0207 , H01L27/0805 , H01L27/10861 , H01L27/10876 , H01L27/10894 , H01L29/66181 , H01L29/66621 , H01L29/78
摘要： A semiconductor device having a decoupling capacitor and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate having a cell region, a first peripheral circuit region, and a second peripheral circuit region. At least one channel trench is disposed in the cell region of the semiconductor substrate. At least one first capacitor trench is disposed in the first peripheral circuit region of the semiconductor substrate, and at least one second capacitor trench is disposed in the second peripheral circuit region of the semiconductor substrate. A gate electrode is disposed in the cell region of the semiconductor substrate and fills the channel trench. A first upper electrode is disposed in the first peripheral circuit region of the semiconductor substrate and fills at least the first capacitor trench. A second upper electrode is disposed in the second peripheral circuit region of the semiconductor substrate and fills at least the second capacitor trench. A gate dielectric layer is interposed between the channel trench and the gate electrode. A first dielectric layer is interposed between the semiconductor substrate of the first peripheral circuit region having the first capacitor trench and the first upper electrode and has the same thickness as the gate dielectric layer. A second dielectric layer is interposed between the semiconductor substrate of the second peripheral circuit region having the second capacitor trench and the second upper electrode and has a different thickness from the first dielectric layer.
摘要翻译：提供具有去耦电容器的半导体器件及其制造方法。半导体器件包括具有单元区域，第一外围电路区域和第二外围电路区域的半导体衬底。至少一个通道沟槽设置在半导体衬底的单元区域中。至少一个第一电容器沟槽设置在半导体衬底的第一外围电路区域中，并且至少一个第二电容器沟槽设置在半导体衬底的第二外围电路区域中。栅电极设置在半导体衬底的单元区域中并填充沟槽。第一上电极设置在半导体衬底的第一外围电路区域中，并且填充至少第一电容器沟槽。第二上电极设置在半导体衬底的第二外围电路区域中，并填充至少第二电容器沟槽。栅极电介质层介于通道沟槽和栅电极之间。在具有第一电容器沟槽的第一外围电路区域的半导体衬底和第一上电极之间插入第一电介质层，并且具有与栅极电介质层相同的厚度。在具有第二电容器沟槽的第二外围电路区域的半导体衬底和第二上部电极之间插入第二电介质层，并且具有与第一电介质层不同的厚度。

5. 发明授权

US08805868B2 Apparatus and method for a query express 有权
标题翻译：用于查询的装置和方法表达
公开(公告)号：US08805868B2
公开(公告)日：2014-08-12
申请号：US12671909
申请日：2007-12-27
申请人： Mi-Ran Choi , Hee-Cheol Seo , Hyun-Ki Kim , Myung-Gil Jang , Jeong Heo , Soo-Jong Lim , Yeo-Chan Yoon , Kyoung-Ro Yoon
发明人： Mi-Ran Choi , Hee-Cheol Seo , Hyun-Ki Kim , Myung-Gil Jang , Jeong Heo , Soo-Jong Lim , Yeo-Chan Yoon , Kyoung-Ro Yoon
IPC分类号： G06F17/30
CPC分类号： G06F17/30023 , G06F17/30926
摘要： Disclosed is an apparatus and method for expressing a query for searching multimedia data. The apparatus and method of the present invention expresses diverse query types in MPEG-7 query formats and uses field types to re use a designated region. The apparatus for expressing a query inputted from a user for multimedia data search includes: an input means for receiving a query for multimedia data search from a user; and a query expression means for expressing the input query in a field type, wherein the field type includes at least one among identifier information indicating identification (ID) information of a field presenting a search condition included in the input query; type information indicating data type information of the field; and reference information indicating identifier information of another field for reference. The present invention is applied to MPEG-7 query formats.
摘要翻译：公开了一种用于表达用于搜索多媒体数据的查询的装置和方法。本发明的装置和方法以MPEG-7查询格式表示不同的查询类型，并且使用字段类型来重新使用指定的区域。用于表示从用户输入的用于多媒体数据搜索的查询的装置包括：输入装置，用于从用户接收用于多媒体数据搜索的查询; 以及用于以场类型表达输入查询的查询表达装置，其中，所述字段类型包括表示所述输入查询中包括的搜索条件的字段的标识（ID）信息的标识符信息中的至少一个; 指示该字段的数据类型信息的类型信息; 以及指示用于参考的另一场的标识符信息的参考信息。本发明应用于MPEG-7查询格式。

6. 发明申请

US20120089634A1 SYSTEM AND METHOD FOR PROVIDING MULTIMEDIA SERVICE IN A COMMUNICATION SYSTEM 审中-公开
标题翻译：在通信系统中提供多媒体服务的系统和方法
公开(公告)号：US20120089634A1
公开(公告)日：2012-04-12
申请号：US13269521
申请日：2011-10-07
申请人： Mi-Ran CHOI , Myung-Gil Jang , Hyo-Jung Oh , Jeong Heo , Pum-Mo Ryu , Yoon-Jae Choi , Chang-Ki Lee , Ji-Ae Shin , Hyun-Ki Kim , Soo-Jong Lim , Yeo-Chan Yoon , Chung-Hee Lee , Sang-Kyu Park
发明人： Mi-Ran CHOI , Myung-Gil Jang , Hyo-Jung Oh , Jeong Heo , Pum-Mo Ryu , Yoon-Jae Choi , Chang-Ki Lee , Ji-Ae Shin , Hyun-Ki Kim , Soo-Jong Lim , Yeo-Chan Yoon , Chung-Hee Lee , Sang-Kyu Park
IPC分类号： G06F17/30 , G06F15/16
CPC分类号： G06F16/43 , G06F16/48
摘要： In a method for providing multimedia services in a communication system, a request message for requesting contract information on users' multimedia services are received from a terminal according to service requests of the multimedia services to be received by the users. A query message for searching for the contract information in a database is generated corresponding to the request message, and the query message is transmitted to the database. The contract information is searched in the database through a Moving Picture Experts Group (MPEG) query format protocol based on the query message, and a query result message containing the contract information is received from the database in response to the query message. The contract information is acknowledged in the query result message, and a response message containing the contract information is generated. Then, the response message is transmitted to the terminal.
摘要翻译：在通信系统中提供多媒体业务的方法中，根据用户要接收的多媒体业务的业务请求，从终端接收用于请求用户多媒体业务合同信息的请求消息。根据请求消息生成用于搜索数据库中的合同信息的查询消息，并将查询消息发送到数据库。通过基于查询消息的运动图像专家组（MPEG）查询格式协议，在数据库中搜索合同信息，并且响应于查询消息从数据库接收包含合同信息的查询结果消息。在查询结果消息中确认合同信息，并生成包含合同信息的响应消息。然后，响应消息被发送到终端。

7. 发明申请

US20100131557A1 METHOD AND APPARATUS FOR RETRIEVING MULTIMEDIA CONTENTS 有权
标题翻译：用于检索多媒体内容的方法和装置
公开(公告)号：US20100131557A1
公开(公告)日：2010-05-27
申请号：US12597158
申请日：2008-04-23
申请人： Hee-Cheol Seo , Mi-Ran Choi , Hyun-Ki Kim , Myung-Gil Jang , Jeong Heo , Soo-Jong Lim , Yeo-Chan Yoon , Kyoung-Ro Yoon
发明人： Hee-Cheol Seo , Mi-Ran Choi , Hyun-Ki Kim , Myung-Gil Jang , Jeong Heo , Soo-Jong Lim , Yeo-Chan Yoon , Kyoung-Ro Yoon
IPC分类号： G06F17/30
CPC分类号： G06F17/30781 , G06F17/30038 , G06F17/30265 , G06F17/30749 , G06F17/30755
摘要： Disclosed is an apparatus and method for retrieving multimedia contents represented in a Moving Picture Experts Group (MPEG) 7 by transforming a user query into an MPEG-7 query format. The method for retrieving multimedia contents includes: representing a user query by using an indicator indicating a specific region of a Moving Picture Experts Group 7 (MPEG-7) document and a reference for referring to the indicator; analyzing a meaning of the user query represented by using the indicator and the reference to thereby produce an analysis result; and retrieving multimedia contents according to the analysis result. The present research can satisfy more than two retrieval conditions within the same structure in an MPEG-7 query format and it can also clearly represent that two different MPEG-7 documents are referred to. Since the meaning of a user query is analyzed accurately during retrieval process, it is possible to precisely retrieve multimedia contents.
摘要翻译：公开了通过将用户查询变换为MPEG-7查询格式来检索运动图像专家组（MPEG）7中所表示的多媒体内容的装置和方法。用于检索多媒体内容的方法包括：通过使用指示运动图像专家组7（MPEG-7）文档的特定区域的指示符和用于参考该指示符的参考来表示用户查询; 分析通过使用指示符和参考表示的用户查询的含义，从而产生分析结果; 并根据分析结果检索多媒体内容。本研究可以以MPEG-7查询格式在同一结构内满足两个以上的检索条件，并且还可以清楚地表示两个不同的MPEG-7文档。由于在检索过程中对用户查询的含义进行了准确的分析，因此可以精确地检索多媒体内容。

8. 发明申请

US20060291369A1 Recorded master for manufacturing information storage medium and method of manufacturing the master 审中-公开
标题翻译：记录制造信息存储介质的主机和制造主机的方法
公开(公告)号：US20060291369A1
公开(公告)日：2006-12-28
申请号：US10570803
申请日：2004-09-01
申请人： Du-Seop Yoon , Jao-Ho Kim , In-Sik Park , In-Oh Hwang , Hyun-Ki Kim
发明人： Du-Seop Yoon , Jao-Ho Kim , In-Sik Park , In-Oh Hwang , Hyun-Ki Kim
IPC分类号： G11B3/70
CPC分类号： G11B7/261
摘要： A recorded master for manufacturing an information storage medium includes a master substrate; a heat absorption layer coated on the master substrate and absorbing heat at a part on which a beam is irradiated; and a separation layer coated on the heat absorption layer, wherein according to a temperature distribution of the part on which the beam is irradiated on the heat absorption layer, a volume change occurs in at least one of the heat absorption layer and the separation layer.
摘要翻译：用于制造信息存储介质的记录母盘包括主基片; 涂覆在母板上的吸热层，并在辐射束的部分吸收热量; 以及涂布在所述吸热层上的分离层，其中根据所述光束照射在所述吸热层上的部分的温度分布，在所述吸热层和所述分离层中的至少一个中发生体积变化。

9. 发明申请

US20120220809A1 Disposal and Decontamination of Radioactive Polyvinyl Alcohol Products 有权
标题翻译：放射性聚乙烯醇产品的处置和去污
公开(公告)号：US20120220809A1
公开(公告)日：2012-08-30
申请号：US13508895
申请日：2010-11-12
申请人： Jin-Kil Kim , Ui-Dong Lee , Hyun-Ki Kim , Seong-Jun Hong
发明人： Jin-Kil Kim , Ui-Dong Lee , Hyun-Ki Kim , Seong-Jun Hong
IPC分类号： G21F9/34 , B01J19/00
CPC分类号： G21F9/34 , G21F9/14
摘要： Methods and apparatus for decontaminating disposable protective products prepared from polyvinyl alcohol (PVA), used in a nuclear power plant, to less than minimum detectable activity (MDA) are disclosed. In the disclosed methods and apparatus, solid protective products made of PVA, generated from a nuclear power plant, are dissolved into a liquid, and then are decontaminated to less than MDA. The PVA solution decontaminated in this way is concentrated to an appropriate concentration or dried, and finally is subjected to self-disposal. This can fundamentally block the generation amount of combustible waste amounting to 50% or more of low and intermediate level waste of nuclear power plants, thereby considerably contributing to a reduction of the operating expenses of the nuclear power plants. The present invention further relates to methods and apparatus for self-disposing disposable protective products manufactured by conventional polyvinyl alcohol (PVA) through pyrolysis/catalytic oxidation of a PVA solution generated by concentration, and treating the decontaminated PVA solution within a plant. The PVA protective products are dissolved/concentrated/oxidized in water to remove firstly organic matter, and then PVA materials in the PVA solution are completely oxidized into CO2 and H2O by using a small-sized pyrolysis/catalytic oxidation reactor.
摘要翻译：公开了将用于核动力装置的聚乙烯醇（PVA）制备的一次性防护产品去污化至少于最小可检测活性（MDA）的方法和装置。在所公开的方法和装置中，由核电厂生产的由PVA制成的固体保护产品溶解在液体中，然后净化成小于MDA。以这种方式去除的PVA溶液被浓缩至适当的浓度或干燥，最后进行自我处理。这可以从根本上阻止核电厂中低档废物达到50％以上的可燃废物的发电量，从而大大有助于降低核电厂的运行费用。本发明还涉及通过常规聚乙烯醇（PVA）通过热分解/催化氧化浓缩产生的PVA溶液和处理植物中去污的PVA溶液来自行布置一次性防护产品的方法和装置。 PVA保护产物在水中溶解/浓缩/氧化，首先除去有机物质，然后使用小型热解/催化氧化反应器将PVA溶液中的PVA材料完全氧化成CO 2和H 2 O.

10. 发明申请

US20120168951A1 PRINTED CIRCUIT BOARD AND SEMICONDUCTOR PACKAGE COMPRISING THE SAME 有权
标题翻译：印刷电路板和包含该印刷电路板的半导体封装
公开(公告)号：US20120168951A1
公开(公告)日：2012-07-05
申请号：US13240083
申请日：2011-09-22
申请人： Hyun-Ki Kim , Dae-Yong Choi , Mi-Yeon Kim
发明人： Hyun-Ki Kim , Dae-Yong Choi , Mi-Yeon Kim
IPC分类号： H01L23/48 , H05K1/09 , H05K1/02 , H05K1/00
CPC分类号： H05K3/4602 , H01L23/49822 , H01L2224/16225 , H01L2224/32225 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2924/15311 , H05K3/4608 , H05K2201/068 , H05K2201/09136 , H01L2924/00
摘要： Provided are a printed circuit board (PCB) and a semiconductor package including the same. The PCB includes a core layer having a stacked structure including at least a first layer made of a first material that has a first coefficient of thermal expansion (CTE) and a second layer made of a second material that has a second CTE different from the first CTE, an upper wiring layer disposed on a first surface of the core layer, and a lower wiring layer disposed on a second surface of the core layer opposite the first surface.
摘要翻译：提供了一种印刷电路板（PCB）和包括其的半导体封装。 PCB包括具有层叠结构的芯层，该堆叠结构至少包括由具有第一热膨胀系数（CTE）的第一材料制成的第一层和由具有第二CTE的第二材料制成的第二层，第二层具有不同于第一 CTE，设置在芯层的第一表面上的上布线层和布置在与第一表面相对的芯层的第二表面上的下布线层。

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