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1. 发明授权

US06790800B2 Microwave dielectric ceramic composition having high quality factor 失效
标题翻译：微波介电陶瓷组合物具有高品质因素
公开(公告)号：US06790800B2
公开(公告)日：2004-09-14
申请号：US10325777
申请日：2002-12-19
申请人： Hyun-Jai Kim , Seok-Jin Yoon , Ji-Won Choi , Chong-Yun Kang , Jong-Yoon Ha
发明人： Hyun-Jai Kim , Seok-Jin Yoon , Ji-Won Choi , Chong-Yun Kang , Jong-Yoon Ha
IPC分类号： C04B35495
CPC分类号： C04B35/495 , C04B2235/3206 , C04B2235/3244 , C04B2235/3251 , C04B2235/94 , H05K1/0306
摘要： Disclosed is a dielectric ceramic composition represented by (1−x) (Mg1/3Ta2/3)O2-xZrO2(0
摘要翻译：公开了具有高介电常数，高质量因子（Q）值和稳定的温度系数的（1-x）（Mg1 / 3Ta2 / 3）O2-xZrO2（0

2. 发明授权

US06841496B2 Low temperature co-firing ceramic (LTCC) composition for microwave frequency 失效
标题翻译：低温共烧陶瓷（LTCC）组成微波频率
公开(公告)号：US06841496B2
公开(公告)日：2005-01-11
申请号：US10313659
申请日：2002-12-05
申请人： Hyun-Jai Kim , Seok-Jin Yoon , Ji-Won Choi , Chong-Yun Kang , Jong-Yoon Ha
发明人： Hyun-Jai Kim , Seok-Jin Yoon , Ji-Won Choi , Chong-Yun Kang , Jong-Yoon Ha
IPC分类号： C04B35/465 , H01B3/12 , H01L23/498
CPC分类号： H01L23/49894 , C04B35/465 , C04B35/6262 , C04B2235/3203 , C04B2235/3208 , C04B2235/3236 , C04B2235/3251 , C04B2235/3284 , C04B2235/3296 , C04B2235/3409 , C04B2235/3418 , C04B2235/365 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： The invention relates to a low temperature co-firing ceramic (LTCC) composition for microwave frequency represented by the following formula 1: Ca[(Li1/3Nb2/3)1-xTix]O3-δ+y(B2O3.ZnO.SiO2.PbO) (1) wherein x is molar ratio and 0≦x≦0.3; and y is wt % ratio and 0≦y≦15. The present invention relates to dielectric LTCC composition for microwave frequency that has high dielectric constants, high Q values, and stable temperature coefficients of the resonant frequency, and has sintering temperature as low as ≦900° C. so as to be co-fired without reaction with an electrode such as silver (Ag). The compositions have excellent characteristics required to cellular phones and PCS in the range of 800 MHz˜1.9 GHz, which is commonly used, and laminated chip filters and antennas in the range of IMT 2000 of 2 GHz, which will be used.
摘要翻译：本发明涉及由下式1表示的用于微波频率的低温共烧陶瓷（LTCC）组合物：其中x是摩尔比，0≤x≤0.3; y为重量％，0 <= y <= 15。本发明涉及具有高介电常数，高Q值和谐振频率的稳定温度系数的微波频率的介电LTCC组合物，并且具有低于<900℃的烧结温度以便共烧而不与诸如银（Ag）的电极反应。该组合物具有优异的特性，这些特性是通常使用的800MHz〜1.9GHz范围内的蜂窝电话和PCS，并且将使用将在2GHz的IMT 2000范围内的层叠芯片滤波器和天线。

3. 发明授权

US06825819B2 Ceramic chip antenna 失效
标题翻译：陶瓷芯片天线
公开(公告)号：US06825819B2
公开(公告)日：2004-11-30
申请号：US10301243
申请日：2002-11-20
申请人： Hyun-Jai Kim , Seok-Jin Yoon , Ji-Won Choi , Chong-Yun Kang , Sung-Hun Sim
发明人： Hyun-Jai Kim , Seok-Jin Yoon , Ji-Won Choi , Chong-Yun Kang , Sung-Hun Sim
IPC分类号： H01Q124
CPC分类号： H01Q1/362 , H01Q1/243 , H01Q11/08
摘要： A ceramic chip antenna for use in ultra-high frequency communications. The ceramic chip antenna according to the present invention comprises a main body, first and second helical conductors, and a single power supply section for supplying power to the first and second helical conductors. The main body is produced by laminating a plurality of ceramic sheets made of a dielectric material. The first and second helical conductors are formed inside the main body by a screen-printing method. The first and second helical conductors have the same axis of helical rotation, as view from the power supply section.
摘要翻译：一种用于超高频通信的陶瓷芯片天线。根据本发明的陶瓷芯片天线包括主体，第一和第二螺旋形导体以及用于向第一和第二螺旋导体供电的单个电源部。主体通过层叠由电介质材料制成的多个陶瓷片来制造。第一和第二螺旋导体通过丝网印刷方法形成在主体内部。第一和第二螺旋导体具有与电源部分相同的螺旋旋转轴线。

4. 发明申请

US20110212323A1 METHOD FOR PREPARING OXIDE THIN FILM GAS SENSORS WITH HIGH SENSITIVITY 审中-公开
标题翻译：用于制备具有高灵敏度的氧化物薄膜气体传感器的方法
公开(公告)号：US20110212323A1
公开(公告)日：2011-09-01
申请号：US12874135
申请日：2010-09-01
申请人： Ho Won Jang , Seok-Jin Yoon , Jin Sang Kim , Chong Yun Kang , Ji-Won Choi , Hi Gyu Moon
发明人： Ho Won Jang , Seok-Jin Yoon , Jin Sang Kim , Chong Yun Kang , Ji-Won Choi , Hi Gyu Moon
IPC分类号： B32B5/16 , B05D3/00 , B05D3/12 , B05D3/06 , C23C14/34 , B29D7/01
CPC分类号： B05D1/005 , B05D3/142 , B05D5/04 , Y10T428/254
摘要： The present invention relates to a method for preparing oxide thin films with high sensitivity and reliability, which can be advantageously used in the fabrication of articles such as gas sensors. The present invention establishes a high reliability process for preparing large area microsphere templates which may be applicable to silicone semiconductor processes by simple plasma surface treatment and spin coating. The present invention achieves remarkably enhanced sensitivities of thin films of gas sensors by controlling the nanostructure shapes of hollow hemisphere oxide thin films by using simple plasma treatment. In particular, the gas sensor based on the nanostructured TiO2 hollow hemisphere according to the present invention exhibits higher sensitivity, faster response and recovery speed to CO gas over conventional TiO2 gas sensors.
摘要翻译：本发明涉及一种具有高灵敏度和可靠性的制备氧化物薄膜的方法，其可有利地用于制造诸如气体传感器的制品。本发明通过简单的等离子体表面处理和旋涂，建立了可应用于硅氧烷半导体工艺的大面积微球模板的高可靠性工艺。本发明通过使用简单的等离子体处理来控制中空半球氧化物薄膜的纳米结构形状，实现了气体传感器薄膜的敏感性的显着提高。特别地，根据本发明的基于纳米结构的TiO 2空心半球的气体传感器相对于常规的TiO 2气体传感器显示出比CO气体更高的灵敏度，更快的响应和恢复速度。

5. 发明申请

US20100330298A1 Fabrication Of Ferroelectric Ceramic Films Using Rapid Thermal Processing With Ultra-Violet Rays 审中-公开
标题翻译：使用超紫光线快速热处理制备铁电陶瓷膜
公开(公告)号：US20100330298A1
公开(公告)日：2010-12-30
申请号：US12495636
申请日：2009-06-30
申请人： Chong Yun Kang , Kwang Hwan Cho , Seok-Jin Yoon , Min Gyu Kang
发明人： Chong Yun Kang , Kwang Hwan Cho , Seok-Jin Yoon , Min Gyu Kang
IPC分类号： B05D3/06 , B05C11/00
CPC分类号： H01L41/318
摘要： A method for fabricating a ferroelectric ceramic film. The method includes coating a gel film on a substrate. The gel film has at least one ferroelectric material and at least one ultra-violet (UV) sensitive material. The method further includes simultaneously heating the gel film and irradiating a UV ray onto the gel film transforming the gel film into an amorphous ferroelectric film made of the at least one ferroelectric material. The above heating may be performed by using a rapid thermal processing technique.
摘要翻译：一种制造铁电陶瓷膜的方法。该方法包括在基底上涂布凝胶膜。凝胶膜具有至少一种铁电材料和至少一种紫外（UV）敏感材料。该方法还包括同时加热凝胶膜并将紫外线照射到凝胶膜上，将凝胶膜转化成由至少一种铁电材料制成的非晶铁电薄膜。可以通过使用快速热处理技术来进行上述加热。

6. 发明授权

US08030237B2 Dielectric thin film composition showing linear dielectric properties 有权
标题翻译：显示线性介电性能的介电薄膜组合物
公开(公告)号：US08030237B2
公开(公告)日：2011-10-04
申请号：US12537198
申请日：2009-08-06
申请人： Ji-Won Choi , Won Kook Choi , Seok-Jin Yoon
发明人： Ji-Won Choi , Won Kook Choi , Seok-Jin Yoon
IPC分类号： C04B35/468 , C04B35/47
CPC分类号： H01B3/12 , C04B35/4682 , C04B35/47 , C04B2235/3213 , C04B2235/3215 , C04B2235/3293
摘要： The present invention relates to a dielectric thin film composition showing linear dielectric properties, in which tin oxides (SnO2) are introduced into a (Ba,Sr)TiO3 (BSTO) dielectric thin film in a continuous diffusion gradient manner in composition. Since the non-linear dielectric properties of BSTO are converted to linear dielectric properties by the addition of SnO2 according to the present invention, the dielectric thin film composition of the present invention is characterized in that: there is little change in the capacitance according to the applied electric field; it has a high dielectric constant capable of showing a desired capacitance even at a thickness suitable for preventing the occurrence of electron tunneling; and it exhibits paraelectric properties similar to the conventional dielectric substances such as SiO2 while having a very low dielectric loss.
摘要翻译：本发明涉及一种电介质薄膜组合物，其表现出线性介电性质，其中在组成中以连续扩散梯度方式将锡氧化物（SnO 2）引入到（Ba，Sr）TiO 3（BSTO）电介质薄膜中。由于根据本发明通过添加SnO 2将BSTO的非线性介电性能转化为线性介电特性，所以本发明的电介质薄膜组合物的特征在于：根据应用电场; 即使在适合于防止电子隧道发生的厚度的情况下，也具有能够显示所需电容的高介电常数; 并且具有类似于常规电介质物质如SiO 2的同电性能，同时具有非常低的介电损耗。

7. 发明申请

US20100035749A1 Dielectric Thin Film Composition Showing Linear Dielectric Properties 有权
标题翻译：显示线性介电性能的介电薄膜组成
公开(公告)号：US20100035749A1
公开(公告)日：2010-02-11
申请号：US12537198
申请日：2009-08-06
申请人： Ji-Won Choi , Won Kook Choi , Seok-Jin Yoon
发明人： Ji-Won Choi , Won Kook Choi , Seok-Jin Yoon
IPC分类号： C04B35/457
CPC分类号： H01B3/12 , C04B35/4682 , C04B35/47 , C04B2235/3213 , C04B2235/3215 , C04B2235/3293
摘要： The present invention relates to a dielectric thin film composition showing linear dielectric properties, in which tin oxides (SnO2) are introduced into a (Ba,Sr)TiO3 (BSTO) dielectric thin film in a continuous diffusion gradient manner in composition. Since the non-linear dielectric properties of BSTO are converted to linear dielectric properties by the addition of SnO2 according to the present invention, the dielectric thin film composition of the present invention is characterized in that: there is little change in the capacitance according to the applied electric field; it has a high dielectric constant capable of showing a desired capacitance even at a thickness suitable for preventing the occurrence of electron tunneling; and it exhibits paraelectric properties similar to the conventional dielectric substances such as SiO2 while having a very low dielectric loss.
摘要翻译：本发明涉及一种电介质薄膜组合物，其表现出线性介电性质，其中在组成中以连续扩散梯度方式将锡氧化物（SnO 2）引入到（Ba，Sr）TiO 3（BSTO）电介质薄膜中。由于根据本发明通过添加SnO 2将BSTO的非线性介电性能转化为线性介电特性，所以本发明的电介质薄膜组合物的特征在于：根据应用电场; 即使在适合于防止电子隧道发生的厚度的情况下，也具有能够显示所需电容的高介电常数; 并且具有类似于常规电介质物质如SiO 2的同电性能，同时具有非常低的介电损耗。

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