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1. 发明授权

US07728327B2 2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material 有权
标题翻译：使用突变金属 - 绝缘体转变半导体材料的2端子半导体器件
公开(公告)号：US07728327B2
公开(公告)日：2010-06-01
申请号：US11011878
申请日：2004-12-13
申请人： Hyun Tak Kim , Doo Hyeb Youn , Byung Gyu Chae , Kwang Yong Kang , Yong Sik Lim , Gyungock Kim , Sunglyul Maeng , Seong Hyun Kim
发明人： Hyun Tak Kim , Doo Hyeb Youn , Byung Gyu Chae , Kwang Yong Kang , Yong Sik Lim , Gyungock Kim , Sunglyul Maeng , Seong Hyun Kim
IPC分类号： H01L29/04
CPC分类号： H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/14 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/1625
摘要： Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.
摘要翻译：提供了使用突变MIT半导体材料层的2端子半导体器件。 2端子半导体器件包括第一电极层，具有小于2eV的能隙的突变MIT半导体有机或无机材料层和设置在第一电极层上的空穴层中的孔，以及设置在突发上的第二电极层 MIT半导体有机或无机材料层。通过施加在第一电极层和第二电极层之间的场，在突变MIT半导体材料层中产生突变MIT。

2. 发明授权

US06987290B2 Current-jump-control circuit including abrupt metal-insulator phase transition device 有权
标题翻译：电流跳跃控制电路包括突变金属 - 绝缘体相变装置
公开(公告)号：US06987290B2
公开(公告)日：2006-01-17
申请号：US10866274
申请日：2004-06-10
申请人： Hyun Tak Kim , Doo Hyeb Youn , Kwang Yong Kang , Byung Gyu Chae , Yong Sik Lim , Seong Hyun Kim , Sungyul Maeng , Gyungock Kim
发明人： Hyun Tak Kim , Doo Hyeb Youn , Kwang Yong Kang , Byung Gyu Chae , Yong Sik Lim , Seong Hyun Kim , Sungyul Maeng , Gyungock Kim
IPC分类号： H01L39/16
CPC分类号： H01L45/00
摘要： A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.
摘要翻译：提出了包括突变金属 - 绝缘体相变装置的电流跳跃控制电路，并且包括源极，突变金属 - 绝缘体相变装置和电阻元件。突变金属 - 绝缘体相变装置包括连接到源极的第一和第二电极，并且当在第一电极和第二电极之间施加电场时，显示出电流跳跃的突变金属 - 绝缘体相变特性。电阻元件连接在源极和突变金属 - 绝缘体相变器件之间，以控制流过突发金属 - 绝缘体相变器件的跳跃电流。根据上述电流控制电路，能够防止突变金属 - 绝缘体相变装置由于大量的电流而发生故障，因此电流跳跃控制电路可以应用于各种应用领域。

3. 发明授权

US06933553B2 Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistor 有权
标题翻译：使用二氧化钒层作为沟道材料的场效应晶体管和制造场效应晶体管的方法
公开(公告)号：US06933553B2
公开(公告)日：2005-08-23
申请号：US10749596
申请日：2003-12-30
申请人： Hyun Tak Kim , Kwang Yong Kang , Doo Hyeb Youn , Byung Gyu Chae
发明人： Hyun Tak Kim , Kwang Yong Kang , Doo Hyeb Youn , Byung Gyu Chae
IPC分类号： H01L21/335 , H01L49/00 , H01L29/772 , H01L19/12
CPC分类号： H01L49/003
摘要： Provided is a field effect transistor. The field effect transistor includes an insulating vanadium dioxide (VO2) thin film used as a channel material, a source electrode and a drain electrode disposed on the insulating VO2 thin film to be spaced apart from each other by a channel length, a dielectric layer disposed on the source electrode, the drain electrode, and the insulating VO2 thin film, and a gate electrode for applying a predetermined voltage to the dielectric layer.
摘要翻译：提供了场效应晶体管。场效应晶体管包括用作沟道材料的绝缘二氧化钒（VO 2 N 2）薄膜，设置在绝缘VO 2薄膜上的源电极和漏电极通过沟道长度彼此间隔开，设置在源电极，漏电极和绝缘VO 2薄膜上的电介质层和用于施加预定电压的栅电极电介质层。

4. 发明申请

US20080277763A1 Abrupt Metal-Insulator Transition Wafer, and Heat Treatment Apparatus and Method For the Wafer 审中-公开
标题翻译：突破式金属绝缘体过渡晶片，以及用于晶片的热处理设备和方法
公开(公告)号：US20080277763A1
公开(公告)日：2008-11-13
申请号：US11997050
申请日：2006-07-04
申请人： Hyun Tak Kim , Byung Gyu Chae , Kwang Yong Kang , Sun Jin Yun
发明人： Hyun Tak Kim , Byung Gyu Chae , Kwang Yong Kang , Sun Jin Yun
IPC分类号： H01L21/322 , H01L29/12 , H05B3/68
CPC分类号： H01L21/324 , H01L21/3245 , H01L21/67103 , H01L21/68728
摘要： Provided are a wafer with the characteristics of abrupt metal-insulator transition (MIT), and a heat treatment apparatus and method that make it possible to mass-produce a large-diameter wafer without directly attaching the wafer to a heater or a substrate holder. The heat treatment apparatus includes a heater applying heat to a wafer having the characteristics of abrupt MIT and one surface covered with a thermally opaque film, and a plurality of fixing units formed along an edge portion of a top surface of the heater to fix the wafer to the heater.
摘要翻译：提供具有突变金属 - 绝缘体转变特性（MIT）的晶片，以及使得可以批量生产大直径晶片而不将晶片直接附接到加热器或基板保持器的热处理设备和方法。热处理装置包括对具有突然MIT特性的突起的晶片加热的加热器和覆盖有不透热膜的一个表面，以及沿着加热器顶面的边缘部分形成的多个固定单元，以固定晶片到加热器。

5. 发明授权

US07489492B2 Abrupt metal-insulator transition device, circuit for removing high-voltage noise using the abrupt metal-insulator transition device, and electrical and/or electronic system comprising the circuit 有权
标题翻译：突然的金属 - 绝缘体转换装置，用于使用突然的金属 - 绝缘体转换装置去除高压噪声的电路，以及包括该电路的电和/或电子系统
公开(公告)号：US07489492B2
公开(公告)日：2009-02-10
申请号：US12021764
申请日：2008-01-29
申请人： Hyun Tak Kim , Kwang Yong Kang , Bong Jun Kim , Yong Wook Lee , Sun Jin Yun , Byung Gyu Chae , Gyung Ock Kim
发明人： Hyun Tak Kim , Kwang Yong Kang , Bong Jun Kim , Yong Wook Lee , Sun Jin Yun , Byung Gyu Chae , Gyung Ock Kim
IPC分类号： H02H3/22 , H02H9/04
CPC分类号： H01L49/003
摘要： Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.
摘要翻译：提供了用于绕过超高压噪声以保护诸如高压开关的电和/或电子系统的突发金属 - 绝缘体转变（MIT）装置，从超高电压，高压噪声使用突发MIT装置绕过超高压噪声的除电路，以及包括高压噪声去除电路的电气和/或电子系统。突变MIT装置包括基板，第一突发MIT结构和第二突发MIT结构。第一和第二突变MIT结构分别形成在基板的上表面和下表面上。高电压噪声去除电路包括与要保护的电和/或电子系统并联连接的突变MIT装置链。突发MIT设备链包括彼此串行连接的至少两个突发MIT设备。

6. 发明申请

US20090011145A1 Method of Manufacturing Vanadium Oxide Thin Film 审中-公开
标题翻译：制造氧化钒薄膜的方法
公开(公告)号：US20090011145A1
公开(公告)日：2009-01-08
申请号：US12064807
申请日：2006-08-23
申请人： Sun-Jin Yun , Jung Wook Lim , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang Yong Kang
发明人： Sun-Jin Yun , Jung Wook Lim , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang Yong Kang
IPC分类号： C23C16/513 , C23C16/00
CPC分类号： C23C16/405 , C23C16/45542 , C23C16/45553 , C23C16/50
摘要： Provided is a method of manufacturing a large-sized vanadium oxide thin film having a uniform surface, uniform film thickness and stable composition. According to the method, a vanadium-organometallic compound gas is injected into a chamber to form adsorption layer where molecules of the vanadium-organometallic compound are adsorbed on the surface of a substrate. After that, an oxygen precursor is injected into the chamber and thus allowed to accomplish surface-saturation reaction with the adsorbed materials to fabricate a vanadium oxide thin film.
摘要翻译：提供一种具有均匀的表面，均匀的膜厚度和稳定的组成的大型氧化钒薄膜的制造方法。根据该方法，将钒有机金属化合物气体注入室内以形成其中有机金属化合物分子被吸附在基材表面上的吸附层。之后，向室内注入氧前体，由此与吸附材料进行表面饱和反应，制作氧化钒薄膜。

7. 发明申请

US20090091003A1 INSULATOR UNDERGOING ABRUPT METAL-INSULATOR TRANSITION, METHOD OF MANUFACTURING THE INSULATOR, AND DEVICE USING THE INSULATOR 审中-公开
标题翻译：绝缘子承受金属绝缘体过渡的破坏，制造绝缘体的方法和使用绝缘体的装置
公开(公告)号：US20090091003A1
公开(公告)日：2009-04-09
申请号：US12089778
申请日：2006-10-16
申请人： Jung Wook Lim , Sun Jin Yun , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang-Yong Kang
发明人： Jung Wook Lim , Sun Jin Yun , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang-Yong Kang
IPC分类号： H01L29/51 , B05D5/12 , C23C14/34 , H05H1/24
CPC分类号： H01B3/12 , C23C16/40 , C23C16/403 , C23C16/405 , H01L21/02178 , H01L21/02186 , H01L21/02194 , H01L21/02271 , H01L21/02274 , H01L21/02304 , H01L21/3141 , H01L21/31604 , H01L21/3162 , H01L49/003
摘要： Provided are an insulator that has an energy band gap of 2 eV or more and undergoes an abrupt MIT without undergoing a structural change, a method of manufacturing the insulator, and a device using the insulator. The insulator is abruptly transitioned from an insulator phase into a metal phase by an energy change between electrons without undergoing a structural change.
摘要翻译：提供具有2eV以上的能带隙并且经历突发MIT而不经历结构变化的绝缘体，制造绝缘体的方法以及使用该绝缘体的器件。通过电子之间的能量变化，绝缘体从绝缘体相突然转变为金属相，而不发生结构变化。

8. 发明申请

US20080315775A1 Electron Emission Device Using Abrupt Metal-Insulator Transition and Display Including the Same 失效
标题翻译：使用突发金属绝缘体转换和显示的电子发射装置包括它
公开(公告)号：US20080315775A1
公开(公告)日：2008-12-25
申请号：US12064948
申请日：2006-08-25
申请人： Hyun Tak Kim , Byung Gyu Chae , Kwang Yong Kang , Yoon Ho Song
发明人： Hyun Tak Kim , Byung Gyu Chae , Kwang Yong Kang , Yoon Ho Song
IPC分类号： H01J29/04 , H01J31/12 , H01L31/0224
CPC分类号： H01J31/127 , H01J1/316 , H01J2201/316 , H01J2201/3165 , H01J2329/0486 , H01J2329/0489
摘要： An electron emission device having a high electron emitting rate and a display including the device are prodivided. The electron emission device using abrupt metal-insulator transition, the device including: a board; a metal-insulator transition (MIT) material layer disposed on the board and divided by a predetermined gap with portions of the divided MIT material layer facing one another; and electrodes connected to each of the portions of the divided metal-insulator transition material layer for emitting electrons to the gap between the portions of the divided metal-insulator transition material layer.
摘要翻译：产生具有高电子发射速率的电子发射装置和包括该装置的显示器。电子发射器件采用突发金属 - 绝缘体转换，器件包括：板; 金属 - 绝缘体转变（MIT）材料层，设置在所述板上并与所分割的MIT材料层的彼此面对的部分分开预定的间隙; 以及连接到分开的金属 - 绝缘体转移材料层的每个部分以将电子发射到分割的金属 - 绝缘体转移材料层的部分之间的间隙的电极。

9. 发明授权

US07408217B2 Metal-insulator transition switching transistor and method for manufacturing the same 有权
标题翻译：金属绝缘体转换开关晶体管及其制造方法
公开(公告)号：US07408217B2
公开(公告)日：2008-08-05
申请号：US10576579
申请日：2004-04-01
申请人： Doo Hyeb Yoon , Hyun Tak Kim , Byung Gyu Chae , Kwang Yong Kang , Sung Lyul Maeng
发明人： Doo Hyeb Yoon , Hyun Tak Kim , Byung Gyu Chae , Kwang Yong Kang , Sung Lyul Maeng
IPC分类号： H01L29/772
CPC分类号： H01L49/003
摘要： Provided is a metal-insulator-transition switching transistor with a gate electrode on a silicon substrate (back-gate structure) and a metal-insulator-transition channel layer of VO2 that changes from an insulator phase to a metal phase, or vice versa, depending on a variation of an electric field, and a method for manufacturing the same, whereby it is possible to fabricate a metal-insulator-transition switching transistor having high current gain characteristics and being stable thermally.
摘要翻译：提供了一种金属 - 绝缘体转变开关晶体管，其在硅衬底（背栅结构）上具有栅电极，并且具有从绝缘体相变为VO 2的金属 - 绝缘体 - 过渡沟道层金属相，反之亦然，取决于电场的变化，以及其制造方法，由此可以制造具有高电流增益特性并且热稳定的金属 - 绝缘体转变开关晶体管。

10. 发明授权

US08247806B2 Field effect transistor having graphene channel layer 有权
标题翻译：具有石墨烯通道层的场效应晶体管
公开(公告)号：US08247806B2
公开(公告)日：2012-08-21
申请号：US12649321
申请日：2009-12-29
申请人： Byung-Gyu Chae , Hyun Tak Kim
发明人： Byung-Gyu Chae , Hyun Tak Kim
IPC分类号： H01L51/30
CPC分类号： H01L29/1606 , H01L29/0673 , H01L29/0895 , H01L29/778 , H01L29/78684 , H01L29/78696 , H01L51/0541
摘要： Provided is a field effect transistor including a graphene channel layer, and capable of increasing an on/off ratio of an operating current by using the graphene of the graphene channel layer. The field effect transistor includes: a substrate; the graphene channel layer which is disposed on a portion of the substrate and includes graphene; a first electrode disposed on a first region of the graphene channel layer and a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is apart from the first region, and a portion of the substrate; a second electrode disposed on the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, and the second electrode; and a gate electrode disposed on a portion of the gate insulation layer.
摘要翻译：提供了包括石墨烯通道层的场效应晶体管，并且能够通过使用石墨烯沟道层的石墨烯来提高工作电流的导通/截止比。场效应晶体管包括：衬底; 所述石墨烯通道层设置在所述基板的一部分上并且包括石墨烯; 设置在所述石墨烯通道层的第一区域上的第一电极和所述基板的一部分; 设置在离开第一区域的石墨烯通道层的第二区域上的中间层和基板的一部分; 设置在所述中间层上的第二电极; 设置在石墨烯通道层，第一电极和第二电极的一部分上的栅极绝缘层; 以及设置在栅极绝缘层的一部分上的栅电极。

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