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1. 发明申请

US20060220043A1 Nitride semiconductor light emitting device 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：US20060220043A1
公开(公告)日：2006-10-05
申请号：US11328196
申请日：2006-01-10
申请人： Hyun Kim , Hyoun Shin , Hyuk Lee , In Pyeon , Chang Kim
发明人： Hyun Kim , Hyoun Shin , Hyuk Lee , In Pyeon , Chang Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： The present invention relates to a nitride semiconductor light emitting device having a rectangular top view in which n-electrode and p-electrode structure is appropriately formed to improve propagation of currents and enhance luminance. The light emitting device includes an n-type nitride semiconductor layer formed on a substrate, and an n-electrode including an n-side bonding pad and a finger-type n-electrode extending away from the n-side bonding pad. The device further includes a mesa structure including an active layer and a p-type nitride semiconductor layer deposited in their order, an ohmic contact layer formed on a substantially entire upper surface of the mesa structure, and a p-electrode including a p-side bonding pad and a finger-type p-electrode extending away from the p-side bonding pad.
摘要翻译：本发明涉及一种具有矩形顶视图的氮化物半导体发光器件，其中适当地形成n电极和p电极结构以改善电流的传播和增强亮度。发光器件包括形成在衬底上的n型氮化物半导体层，以及包括n侧接合焊盘和从n侧焊盘延伸的手指型n电极的n电极。该器件还包括台阶结构，其包括依次沉积的有源层和p型氮化物半导体层，形成在台面结构的大致整个上表面上的欧姆接触层和包括p侧的p型接合焊盘和远离p侧接合焊盘延伸的手指型p电极。

2. 发明申请

US20060060878A1 Submount for use in flipchip-structured light-emitting device including transistor 审中-公开
标题翻译：用于包括晶体管的倒装芯片结构的发光器件的底座
公开(公告)号：US20060060878A1
公开(公告)日：2006-03-23
申请号：US10998941
申请日：2004-11-30
申请人： Hyun Kim , Hyuk Lee , Hyoun Shin , In Pyeon
发明人： Hyun Kim , Hyuk Lee , Hyoun Shin , In Pyeon
IPC分类号： H01L33/00
CPC分类号： H01L25/167 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599 , H01L2224/05099
摘要： Disclosed herein is a submount to mount a light emitting diode in a flipchip-structured light emitting device. The submount including a transistor to mount a nitride semiconductor light emitting diode in a flipchip-structured light emitting device includes: a substrate made of a first conductive semiconductor material; a first region formed on a partial area of the substrate, and made of a second conductive semiconductor material; a second region formed on the remaining regions other than the first region, and made of the second conductive semiconductor material; first and second electrodes formed on the first and second regions, respectively; and a conductive layer formed on the back of the substrate, wherein the first and second electrodes are connected to an n-type electrode and a p-type electrode of the nitride semiconductor light emitting diode through the use of a bump.
摘要翻译：这里公开了一种用于在倒装芯片结构的发光器件中安装发光二极管的基座。包括在半导体结构的发光器件中安装氮化物半导体发光二极管的晶体管的基座包括：由第一导电半导体材料制成的衬底; 形成在所述基板的局部区域上并由第二导电半导体材料制成的第一区域; 形成在除了所述第一区域之外的其余区域上并由所述第二导电半导体材料制成的第二区域; 分别形成在第一和第二区域上的第一和第二电极; 以及形成在所述基板的背面上的导电层，其中所述第一和第二电极通过使用凸块与所述氮化物半导体发光二极管的n型电极和p型电极连接。

3. 发明申请

US20070096115A1 Nitride-based semiconductor light emitting diode 审中-公开
标题翻译：氮化物半导体发光二极管
公开(公告)号：US20070096115A1
公开(公告)日：2007-05-03
申请号：US11581757
申请日：2006-10-17
申请人： Hyuk Lee , In Pyeon , Hyun-Ju Park , Hyun Kim , Dong Kim , Hyoun Shin
发明人： Hyuk Lee , In Pyeon , Hyun-Ju Park , Hyun Kim , Dong Kim , Hyoun Shin
IPC分类号： H01L33/00 , H01L31/12 , H01L27/15 , H01L29/26
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a current spreading layer formed on the p-type nitride semiconductor layer; a p-electrode formed on the current spreading layer, the p-electrode having two p-type branch electrodes; and an n-electrode formed on the n-type nitride semiconductor layer on which the active layer is not formed, the n-electrode having one n-type branch electrode. The n-type branch electrode is formed so as to be inserted between two of the p-type branch electrodes, and a distance from the outermost side of a transparent electrode adjacent to the n-electrode to the p-electrode is identical at any position.
摘要翻译：氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的电流扩散层; 形成在电流扩散层上的p电极，p电极具有两个p型分支电极; 以及形成在其上未形成有源层的n型氮化物半导体层上的n电极，n电极具有一个n型分支电极。 n型分支电极被形成为插入在两个p型分支电极之间，并且从与n电极相邻的透明电极的最外侧到p电极的距离在任何位置是相同的。

4. 发明申请

US20060202225A1 Submount for use in flipchip-structured light emitting device including transistor 审中-公开
标题翻译：用于包括晶体管的倒装芯片结构的发光器件的底座
公开(公告)号：US20060202225A1
公开(公告)日：2006-09-14
申请号：US11430999
申请日：2006-05-10
申请人： Hyun Kim , Hyuk Lee , Hyoun Shin , In Pyeon
发明人： Hyun Kim , Hyuk Lee , Hyoun Shin , In Pyeon
IPC分类号： H01L33/00
CPC分类号： H01L25/167 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599 , H01L2224/05099
摘要： Disclosed herein is a submount to mount a light emitting diode in a flipchip-structured light emitting device. The submount including a transistor to mount a nitride semiconductor light emitting diode in a flipchip-structured light emitting device includes: a substrate made of a first conductive semiconductor material; a first region formed on a partial area of the substrate, and made of a second conductive semiconductor material; a second region formed on the remaining regions other than the first region, and made of the second conductive semiconductor material; first and second electrodes formed on the first and second regions, respectively; and a conductive layer formed on the back of the substrate, wherein the first and second electrodes are connected to an n-type electrode and a p-type electrode of the nitride semiconductor light emitting diode through the use of a bump.
摘要翻译：这里公开了一种用于在倒装芯片结构的发光器件中安装发光二极管的基座。包括在半导体结构的发光器件中安装氮化物半导体发光二极管的晶体管的基座包括：由第一导电半导体材料制成的衬底; 形成在所述基板的局部区域上并由第二导电半导体材料制成的第一区域; 形成在除了所述第一区域之外的其余区域上并由所述第二导电半导体材料制成的第二区域; 分别形成在第一和第二区域上的第一和第二电极; 以及形成在所述基板的背面上的导电层，其中所述第一和第二电极通过使用凸块与所述氮化物半导体发光二极管的n型电极和p型电极连接。

5. 发明申请

US20060163604A1 Gallium nitride-based light emitting device having light emitting diode for protecting electrostatic discharge, and melthod for manufacturing the same 审中-公开
标题翻译：具有用于保护静电放电的发光二极管的氮化镓系发光器件及其制造方法
公开(公告)号：US20060163604A1
公开(公告)日：2006-07-27
申请号：US11244084
申请日：2005-10-06
申请人： Hyoun Shin , Hyun Kim , In Pyeon , Chang Kim
发明人： Hyoun Shin , Hyun Kim , In Pyeon , Chang Kim
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L27/15 , H01L33/32
摘要： A gallium nitride-based light emitting device, and a method for manufacturing the same are provided. The light emitting device comprises a substrate; a main GaN-based LED including a first p-side electrode and a first n-side electrode, the main GaN-based LED formed in a first region on the substrate; and an ESD protecting GaN-based LED including a second p-side electrode and a second n-side electrode, the ESD protecting GaN-based LED formed in a second region on the substrate. The first region is separated from the second region by a device isolation region. The first p-side and n-side electrodes are electrically connected to the second n-side and p-side electrodes, respectively.
摘要翻译：提供了一种氮化镓系发光器件及其制造方法。发光器件包括衬底; 包括第一p侧电极和第一n侧电极的主要GaN基LED，所述主GaN基LED形成在所述基板上的第一区域中; 以及包括第二p侧电极和第二n侧电极的ESD保护GaN基LED，形成在基板上的第二区域中的ESD保护GaN基LED。第一区域通过器件隔离区域与第二区域分离。第一p侧电极和n侧电极分别电连接到第二n侧电极和p侧电极。

6. 发明申请

US20070080353A1 Nitride-based semiconductor light emitting diode and method of manufacturing the same 有权
标题翻译：氮化物半导体发光二极管及其制造方法
公开(公告)号：US20070080353A1
公开(公告)日：2007-04-12
申请号：US11543798
申请日：2006-10-06
申请人： Hyuk Lee , Hyun Kim , Dong Kim , Hyoun Shin
发明人： Hyuk Lee , Hyun Kim , Dong Kim , Hyoun Shin
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
摘要翻译：氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

7. 发明申请

US20050145875A1 Flip chip type nitride semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：倒装芯片型氮化物半导体发光器件及其制造方法
公开(公告)号：US20050145875A1
公开(公告)日：2005-07-07
申请号：US10861511
申请日：2004-06-07
申请人： Hyun Kim , Yong Kim , Hyoun Shin
发明人： Hyun Kim , Yong Kim , Hyoun Shin
IPC分类号： H01L21/28 , H01L33/10 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/62 , H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Disclosed herein are a flip chip type nitride semiconductor light emitting device, which comprises a substrate for growing a nitride semiconductor material, an n-type nitride semiconductor layer formed on the substrate, an active layer formed on at least a part of the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, a bonding force providing layer formed on the p-type nitride semiconductor layer and adapted to provide a bonding force relative to the p-type nitride semiconductor layer, a reflective electrode layer formed on the bonding force providing layer, and adapted to reflect light produced in the active layer toward the substrate and to diffuse electric current, and a cap layer formed on the reflective electrode layer, and adapted to provide a bonding force between the reflective electrode layer and a bonding metal and to reduce contact resistance.
摘要翻译：本文公开了一种倒装芯片型氮化物半导体发光器件，其包括用于生长氮化物半导体材料的衬底，形成在衬底上的n型氮化物半导体层，形成在n型氮化物半导体的至少一部分上的有源层氮化物半导体层，形成在有源层上的p型氮化物半导体层，形成在p型氮化物半导体层上并适于提供相对于p型氮化物半导体层的结合力的接合力提供层，反射电极层，形成在所述接合力提供层上，并且适于将在所述有源层中产生的光朝向所述衬底反射并扩散电流;以及覆盖层，形成在所述反射电极层上，并且适于在所述反射层之间提供接合力电极层和接合金属，并降低接触电阻。

8. 发明申请

US20060048548A1 Washing machine 审中-公开
标题翻译：洗衣机
公开(公告)号：US20060048548A1
公开(公告)日：2006-03-09
申请号：US11110794
申请日：2005-04-21
申请人： Chang Park , Hyun Kim , Chang Kim
发明人： Chang Park , Hyun Kim , Chang Kim
IPC分类号： D06F33/00 , D06F35/00
CPC分类号： D06F35/006 , D06F2202/06 , D06F2204/06
摘要： A washing machine for minimizing damage to laundry and enabling effective washing of the laundry. The washing machine includes a water tub, a drum, and a control unit. The drum is installed in the water tub so as to rotate in a forward and/or a reverse direction. The control unit controls the rotation directions and angles of the rotation of the drum to cause an asymmetric swing motion of the drum.
摘要翻译：一种用于使对衣物的损害最小化并能有效洗涤衣物的洗衣机。洗衣机包括水桶，滚筒和控制单元。滚筒安装在水桶中，以便在向前和/或反向方向上旋转。控制单元控制滚筒的旋转方向和旋转角度以引起滚筒的不对称的摆动运动。

9. 发明授权

US08883359B2 Fuel cell system and driving method of the same 有权
标题翻译：燃料电池系统及其驱动方法相同
公开(公告)号：US08883359B2
公开(公告)日：2014-11-11
申请号：US12939022
申请日：2010-11-03
申请人： Woong-Ho Cho , Ming-Zi Hong , Dong-Hyun Kim , Dong-Rak Kim , Hyun Kim
发明人： Woong-Ho Cho , Ming-Zi Hong , Dong-Hyun Kim , Dong-Rak Kim , Hyun Kim
IPC分类号： H01M8/06 , H01M8/10
CPC分类号： H01M8/0631 , H01M2008/1095 , Y02E60/50
摘要： A method of driving a fuel cell system is disclosed. The method of driving the fuel cell system may include supplying water to a reformer by pressing a pump pipe to pressing members to move the pressing members in a first direction, stopping power generation including stopping a supply of fuel and oxidant to the reformer, and discharging water in the reformer by moving the pressing members in a second direction opposite to the first direction while pressing the pump pipe with the pressing members. A fuel cell system is also disclosed. The fuel cell system includes a reformer, a fuel cell stack and a water transferring pump. The water transferring pump includes pressing members and a pump pipe. The pump pipe is in fluid communication with a water transferring pipe.
摘要翻译：公开了一种驱动燃料电池系统的方法。驱动燃料电池系统的方法可以包括通过将泵管按压到按压部件上来向重整器供给水，以沿第一方向移动按压部件，停止发电，包括停止向重整器供应燃料和氧化剂，并且排出通过在与所述按压部件一起按压所述泵管的同时沿与所述第一方向相反的第二方向移动所述按压部件而将所述重整器中的水排出。还公开了一种燃料电池系统。燃料电池系统包括重整器，燃料电池堆和输水泵。输水泵包括按压构件和泵管。泵管与输水管道流体连通。

10. 发明授权

US08785069B2 Fuel cell system having a reformer 失效
标题翻译：具有重整器的燃料电池系统
公开(公告)号：US08785069B2
公开(公告)日：2014-07-22
申请号：US12971437
申请日：2010-12-17
申请人： Hyun Kim , Dong-Rak Kim , Dong-Hyun Kim , Ming-Zi Hong , Woong-Ho Cho
发明人： Hyun Kim , Dong-Rak Kim , Dong-Hyun Kim , Ming-Zi Hong , Woong-Ho Cho
IPC分类号： H01M8/06
CPC分类号： C01B3/384 , C01B3/323 , C01B2203/0233 , C01B2203/0283 , C01B2203/044 , C01B2203/0445 , C01B2203/047 , C01B2203/066 , C01B2203/0811 , C01B2203/1223 , C01B2203/1235 , H01M8/04007 , H01M8/04201 , H01M8/04253 , H01M8/0612 , H01M8/0668
摘要： A fuel cell system includes a fuel cell stack, an oxidizer supply unit, a reformer, a fuel tank, and a water tank. The reformer generates a hydrogen-containing reformed gas reformed from hydrocarbon-based fuel and supplies it to the fuel cell stack. The fuel tank supplies the hydrocarbon-based fuel to the reformer. The water tank supplies water to the reformer. The reformer includes a reforming unit configured to have a reforming reaction generated therein, a combustion unit configured to supply heat energy to the reforming unit, and a carbon monoxide reduction unit configured to reduce the concentration of carbon monoxide in a reformed gas discharged from the reforming unit. A combustion gas pipe is connected to the combustion unit. A reformed gas pipe is disposed between the reforming unit and the carbon monoxide reduction unit. At least one of the combustion gas pipe and the reformed gas pipe is configured to pass through the inside of the water tank or to raise a temperature of the water tank through contact with the water tank, thereby preventing the freezing of the water tank.
摘要翻译：燃料电池系统包括燃料电池堆，氧化剂供应单元，重整器，燃料箱和水箱。重整器产生从烃类燃料重整而成的含氢重整气体，并将其供给到燃料电池堆。燃料箱向重整器供应烃类燃料。水箱向改性机供水。重整器包括：重整单元，其被配置为具有在其中产生的重整反应;燃烧单元，被配置为向重整单元供应热能;以及一氧化碳还原单元，被配置为减少从重整器排出的重整气体中的一氧化碳浓度单元。燃烧气体管道连接到燃烧单元。重整气体管道设置在重整单元和一氧化碳减少单元之间。燃烧气体管道和重整气体管道中的至少一个构造成通过水箱的内部，或者通过与水箱接触来提高水箱的温度，从而防止水箱的冻结。

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