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1. 发明申请

US20090311486A1 OPTICAL SHEETS 审中-公开
标题翻译：光学片
公开(公告)号：US20090311486A1
公开(公告)日：2009-12-17
申请号：US12519699
申请日：2007-12-18
申请人： Hyun Jin Kim , Hyun Jeong Kim , Jong Min Park
发明人： Hyun Jin Kim , Hyun Jeong Kim , Jong Min Park
IPC分类号： B32B3/00
CPC分类号： G02B5/0278 , G02B5/0215 , G02B5/0226 , G02B5/0231 , G02B5/045 , G02F2001/133607 , Y10T428/24612
摘要： Disclosed is an optical sheet having an optical structure, such as a prism film or sheet, which is a constituent of a backlight unit. In the optical sheet, protrusions are formed on the optical structure layer, and thus light-collecting efficiency in a front direction is maintained, and a function of diffusing light to the front or the inclined surface is also exhibited, thus eliminating the need to additionally mount a diffusion film or a protection film, thereby obviating the use of a plurality of optical films, consequently making it possible to economically manufacture a backlight unit with improved productivity.
摘要翻译：公开了具有作为背光单元的组成部分的光学结构的光学片，例如棱镜膜或片。在光学片中，在光学结构层上形成突起，从而保持前方的聚光效率，并且还发挥向前面或倾斜面的光的扩散的功能，因此不再需要安装扩散膜或保护膜，从而避免使用多个光学膜，从而可以经济地制造具有提高的生产率的背光单元。

2. 发明申请

US20100198084A1 SENSOR COMPRISING A MATERIAL WHICH GENERATES AN ELECTRICAL SIGNAL IN RESPONSE TO ELONGATION 审中-公开
标题翻译：包含产生电子信号的材料的传感器响应延长
公开(公告)号：US20100198084A1
公开(公告)日：2010-08-05
申请号：US12733816
申请日：2008-09-22
申请人： Kap Jin Kim , Hyun Jeong Kim
发明人： Kap Jin Kim , Hyun Jeong Kim
IPC分类号： A61B5/02 , A61B5/08
CPC分类号： A61B5/02438 , A61B5/02444 , A61B5/0285 , A61B5/1135 , A61B5/681 , A61B5/6828 , A61B5/6831 , A61B5/7257
摘要： The present invention relates to a sensor comprising a material which generates an electrical signal in response to elongation. More particularly, the present invention is directed to an apparatus for measuring a length or volume change, which comprises a sensor comprising a piezoelectric material which generates an electrical signal in response to elongation.
摘要翻译：本发明涉及一种传感器，其包括响应于伸长产生电信号的材料。更具体地，本发明涉及一种用于测量长度或体积变化的装置，其包括传感器，该传感器包括响应于伸长而产生电信号的压电材料。

3. 发明申请

US20100059837A1 Spin Transfer Torque Memory Device Having Common Source Line and Method for Manufacturing the Same 审中-公开
标题翻译：具有共同源线的自旋转矩转矩存储器件及其制造方法
公开(公告)号：US20100059837A1
公开(公告)日：2010-03-11
申请号：US12343556
申请日：2008-12-24
申请人： Hyun Jeong Kim , Sung Woong Chung
发明人： Hyun Jeong Kim , Sung Woong Chung
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L27/228 , H01L29/66666 , H01L29/7827
摘要： A spin transfer torque memory device and a method for manufacturing the same. The spin transfer torque memory device comprises a MRAM cell using a MTJ and a vertical transistor. A common source line is formed in the bottom of the vertical transistor, thereby obtaining the high-integrated and simplified memory device.
摘要翻译：一种自旋转移力矩存储装置及其制造方法。自旋转移转矩存储装置包括使用MTJ和垂直晶体管的MRAM单元。在垂直晶体管的底部形成公共源极线，从而获得高集成度和简化的存储器件。

4. 发明授权

US08202737B2 Magnetic memory device and method for manufacturing the same 有权
公开(公告)号：US08202737B2
公开(公告)日：2012-06-19
申请号：US12494245
申请日：2009-06-29
申请人： Hyun Jeong Kim
发明人： Hyun Jeong Kim
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/1659 , G11C11/1675 , H01L43/12
摘要： A magnetic memory device and a method for manufacturing the same are disclosed. The magnetic memory device includes a plurality of gates formed on a semiconductor substrate, a source line connected to a source/drain region shared between the gates neighboring with each other, a plurality of magnetic tunnel junctions connected to non-sharing source/drain regions of the gates on a one-to-one basis, and a bit line connected to the magnetic tunnel junctions. The magnetic memory device applies a magnetic memory cell to a memory so as to manufacture a higher-integration magnetic memory, and uses the magnetic memory cell based on a transistor of a DRAM cell, resulting in an increase in the availability of the magnetic memory.

5. 发明申请

US20110269251A1 Spin Transfer Torque Memory Device Having Common Source Line and Method for Manufacturing the Same 审中-公开
标题翻译：具有共同源线的自旋转矩转矩存储器件及其制造方法
公开(公告)号：US20110269251A1
公开(公告)日：2011-11-03
申请号：US13178274
申请日：2011-07-07
申请人： Hyun Jeong Kim , Sung Woong Chung
发明人： Hyun Jeong Kim , Sung Woong Chung
IPC分类号： H01L21/8246
CPC分类号： H01L27/228 , H01L29/66666 , H01L29/7827
摘要： A spin transfer torque memory device and a method for manufacturing the same. The spin transfer torque memory device comprises a MRAM cell using a MTJ and a vertical transistor. A common source line is formed in the bottom of the vertical transistor, thereby obtaining the high-integrated and simplified memory device.
摘要翻译：一种自旋转移力矩存储装置及其制造方法。自旋转移转矩存储装置包括使用MTJ和垂直晶体管的MRAM单元。在垂直晶体管的底部形成公共源极线，从而获得高集成度和简化的存储器件。

6. 发明授权

US11997983B2 Storage apparatus for companion animal 有权
公开(公告)号：US11997983B2
公开(公告)日：2024-06-04
申请号：US17047238
申请日：2018-10-23
申请人： Hyun Jeong Kim
发明人： Hyun Jeong Kim
IPC分类号： A01K1/02 , A01K1/03 , A01K1/035
CPC分类号： A01K1/0236 , A01K1/0353
摘要： Provide is a storage apparatus for a companion animal, including a first storage part in which a companion animal is seated, a second storage part connected to an edge of the first storage part and configured to surround the companion animal, and a third storage part coupled to the second storage part, wherein the third storage part surrounds the first storage part or is turned over to cover an upper side of the second storage part, thereby allowing the companion animal to be stored in the storage apparatus having a house or bag form.

7. 发明授权

US10517362B2 Versatile bag 有权
公开(公告)号：US10517362B2
公开(公告)日：2019-12-31
申请号：US15565742
申请日：2016-04-11
申请人： Hyun Jeong Kim
发明人： Hyun Jeong Kim
IPC分类号： A45C3/06 , A45C3/00 , A45C3/08 , A45C13/18 , A45C13/30 , A45C1/02 , A45C13/02 , A45C13/08 , A45C13/26 , A45C13/10
摘要： Provided is a versatile bag, including: a containing portion, one side of which is open, thereby forming a main containing chamber for storing belongings; and a deformable portion, which changes the shape thereof, thereby covering the main containing chamber or covering the outside of the containing portion. Embodiments of the present invention can implement a bag that has various shapes and uses.

8. 发明申请

US20150352893A1 THREE-DIMENSIONAL DECORATION 审中-公开
标题翻译：三维装饰
公开(公告)号：US20150352893A1
公开(公告)日：2015-12-10
申请号：US14654803
申请日：2013-12-27
申请人： Hye Jung CHOO , Hyun Jeong KIM
发明人： Hey Jung Choo , Hyun Jeong Kim
IPC分类号： B44F1/06
CPC分类号： B44F1/066 , B44C5/005 , B44F7/00 , G02B27/2221
摘要： The present invention discloses a three-dimensional decoration. A three-dimensional decoration in accordance with a first embodiment of the present invention includes: a lenticular lens; a first image layer arranged on a rear side of the lenticular lens; a first cover arranged on a front side of the lenticular lens; and a first spacer configured for separating the first cover from the lenticular lens in such a way that a first spatial layer is formed in between the first cover and the lenticular lens. An image of the first image layer is three-dimensionally formed in the first spatial layer by binocular parallax through the lenticular lens.
摘要翻译：本发明公开了一种三维装饰。根据本发明的第一实施例的三维装饰包括：双凸透镜; 布置在双凸透镜后侧的第一图像层; 布置在双凸透镜的前侧上的第一盖; 以及第一间隔件，其构造成用于将第一盖与双凸透镜分离，使得第一空间层形成在第一盖和双凸透镜之间。第一图像层的图像通过双凸透镜通过双目视差在第一空间层中三维地形成。

9. 发明授权

US08283186B2 Magnetic memory device and method for manufacturing the same 有权
标题翻译：磁记忆装置及其制造方法
公开(公告)号：US08283186B2
公开(公告)日：2012-10-09
申请号：US13476963
申请日：2012-05-21
申请人： Hyun Jeong Kim
发明人： Hyun Jeong Kim
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/1659 , G11C11/1675 , H01L43/12
摘要： A magnetic memory device and a method for manufacturing the same are disclosed. The magnetic memory device includes a plurality of gates formed on a semiconductor substrate, a source line connected to a source/drain region shared between the gates neighboring with each other, a plurality of magnetic tunnel junctions connected to non-sharing source/drain regions of the gates on a one-to-one basis, and a bit line connected to the magnetic tunnel junctions. The magnetic memory device applies a magnetic memory cell to a memory so as to manufacture a higher-integration magnetic memory, and uses the magnetic memory cell based on a transistor of a DRAM cell, resulting in an increase in the availability of the magnetic memory.
摘要翻译：公开了一种磁存储器件及其制造方法。磁存储器件包括形成在半导体衬底上的多个栅极，连接到彼此相邻的栅极之间共享的源极/漏极区域的源极线，连接到非共享源极/漏极区域的多个磁性隧道结一对一的栅极和连接到磁隧道结的位线。磁存储装置将磁存储单元施加到存储器，以便制造更高集成度的磁存储器，并且使用基于DRAM单元的晶体管的磁存储单元，导致磁存储器的可用性的增加。

10. 发明申请

US20090198747A1 Memory Card Reader Device for Recovering Memory Card 审中-公开
标题翻译：用于恢复存储卡的存储卡读卡器装置
公开(公告)号：US20090198747A1
公开(公告)日：2009-08-06
申请号：US12304461
申请日：2007-09-28
申请人： Hyun Jeong Kim , Eui Bung Jeoung
发明人： Hyun Jeong Kim , Eui Bung Jeoung
IPC分类号： G06F17/30 , G06F12/00
CPC分类号： G06F11/1435
摘要： Disclosed is a memory card reader recovering memory card. The memory card reader recovering memory card according to an embodiment of the present invention may comprise a first interfacing unit interfacing with a memory card, a first storing unit storing a recovery program for recovering any deleted or impaired data in the memory card, a control unit executing the recovery program for the deleted or impaired data at a recovery mode and a display unit displaying a file list of both data stored in the memory card and the data recovered on a display screen.
摘要翻译：公开了一种恢复存储卡的存储卡读卡器。根据本发明的实施例的存储卡读卡器恢复存储卡可以包括与存储卡接口的第一接口单元，存储用于恢复存储卡中的任何已删除或受损数据的恢复程序的第一存储单元，控制单元在恢复模式下执行删除或受损数据的恢复程序，以及显示单元，显示存储在存储卡中的两种数据的文件列表和在显示屏上恢复的数据。

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