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1. 发明授权

US07115459B2 Method of fabricating SiGe Bi-CMOS device 失效
公开(公告)号：US07115459B2
公开(公告)日：2006-10-03
申请号：US11283012
申请日：2005-11-18
申请人： Hyun Cheol Bae , Seung Yun Lee , Sang Hun Kim , Jin Yeong Kang
发明人： Hyun Cheol Bae , Seung Yun Lee , Sang Hun Kim , Jin Yeong Kang
IPC分类号： H01L21/8238
CPC分类号： H01L21/8249
摘要： Provided is a method of fabricating a silicon germanium (SiGe) Bi-CMOS device. In the fabrication method, the source and drain of the CMOS device is formed using a silicon germanium (SiGe) heterojunction, instead of silicon, thereby preventing a leakage current resulting from a parasitic bipolar operation. Further, since the source and drain is connected with an external interconnection through the nickel (Ni) silicide layer, the contact resistance is reduced, thereby preventing loss of a necessary voltage for a device operation and accordingly, making it possible to enable a low voltage and low power operation and securing a broad operation region even in a low voltage operation of an analogue circuit.

2. 发明授权

US07943995B2 NMOS device, PMOS device, and SiGe HBT device formed on SOI substrate and method of fabricating the same 有权
标题翻译： NMOS器件，PMOS器件和SOI衬底上形成的SiGe HBT器件及其制造方法
公开(公告)号：US07943995B2
公开(公告)日：2011-05-17
申请号：US12068161
申请日：2008-02-04
申请人： Jin Yeong Kang , Seung Yun Lee , Kyoung Ik Cho
发明人： Jin Yeong Kang , Seung Yun Lee , Kyoung Ik Cho
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L29/66242 , H01L21/84 , H01L27/1203
摘要： Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.
摘要翻译：提供了在SOI衬底上实现的NMOS器件，PMOS器件和SiGe HBT器件及其制造方法。在制造Si基高速器件时，SiGe HBT和CMOS安装在单个SOI衬底上。特别地，CMOS的源极和漏极由SiGe和金属形成，因此防止漏电流并实现低功耗。此外，芯片中的发热被抑制，即使在低电压下也可以获得宽的工作范围。

3. 发明授权

US07534680B2 Bipolar transistor, BiCMOS device, and method for fabricating thereof 有权
标题翻译：双极晶体管，BiCMOS器件及其制造方法
公开(公告)号：US07534680B2
公开(公告)日：2009-05-19
申请号：US11797071
申请日：2007-04-30
申请人： Jin Yeong Kang , Seung Yun Lee , Kyoung Ik Cho
发明人： Jin Yeong Kang , Seung Yun Lee , Kyoung Ik Cho
IPC分类号： H01L21/8238
CPC分类号： H01L21/84 , H01L21/8249 , H01L27/0623 , H01L27/1203 , H01L29/7371 , H01L29/78
摘要： Provided are bipolar transistor, BiCMOS device and method of fabricating thereof, in which an existing sub-collector disposed beneath a collector of a SiGe HBT is removed and a collector plug disposed at a lateral side of the collector is approached to a base when fabricating a Si-based very high-speed device, whereby it is possible to fabricate the SiGe HBT and an SOI CMOS on a single substrate, reduce the size of the device and the number of masks to be used, and implement the device of high density, low power consumption, and wideband performance.
摘要翻译：提供了双极晶体管，BiCMOS器件及其制造方法，其中去除了设置在SiGe HBT的集电极下方的现有子集电极，并且设置在集电极的横向侧的集电极端子在制造时基于Si的非常高速的器件，由此可以在单个衬底上制造SiGe HBT和SOI CMOS，减少器件的尺寸和使用的掩模的数量，并实现高密度的器件，低功耗，宽带性能。

4. 发明授权

US07348632B2 NMOS device formed on SOI substrate and method of fabricating the same 有权
标题翻译：在SOI衬底上形成的NMOS器件及其制造方法
公开(公告)号：US07348632B2
公开(公告)日：2008-03-25
申请号：US11019179
申请日：2004-12-23
申请人： Jin Yeong Kang , Seung Yun Lee , Kyoung Ik Cho
发明人： Jin Yeong Kang , Seung Yun Lee , Kyoung Ik Cho
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L29/66242 , H01L21/84 , H01L27/1203
摘要： Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.
摘要翻译：提供了在SOI衬底上实现的NMOS器件，PMOS器件和SiGe HBT器件及其制造方法。在制造Si基高速器件时，SiGe HBT和CMOS安装在单个SOI衬底上。特别地，CMOS的源极和漏极由SiGe和金属形成，因此防止漏电流并实现低功耗。此外，芯片中的发热被抑制，即使在低电压下也可以获得宽的工作范围。

5. 发明授权

US08380192B2 Method and apparatus for managing profile information of mobile terminal in mobile communications system 有权
标题翻译：移动通信系统中用于管理移动终端的简档信息的方法和装置
公开(公告)号：US08380192B2
公开(公告)日：2013-02-19
申请号：US12668223
申请日：2008-03-11
申请人： Sung Han Kim , Jong Hong Jeon , Seung Yun Lee
发明人： Sung Han Kim , Jong Hong Jeon , Seung Yun Lee
IPC分类号： H04W4/00
CPC分类号： H04W8/22
摘要： A method for managing profile information of a mobile terminal in a mobile communications system includes: registering profile information of the mobile terminal at a central system via a local system, the profile information having dynamic profile information and static profile information; and registering DB (database) information of an external local system using a same profile format as that used in the central system to thereby manage the dynamic profile information and the static profile information of the mobile terminal. The method further includes registering DB information of another external local system using a profile format different from that used in the central system to thereby manage the dynamic profile information and the static profile information of the mobile terminal.
摘要翻译：一种用于在移动通信系统中管理移动终端的简档信息的方法包括：通过本地系统在中央系统处登记移动终端的简档信息，该简档信息具有动态简档信息和静态简档信息; 以及使用与中央系统中使用的相同的简档格式来登记外部本地系统的DB（数据库）信息，从而管理移动终端的动态简档信息和静态简档信息。该方法还包括使用不同于中央系统中使用的简档格式来登记另一外部本地系统的DB信息，从而管理移动终端的动态简档信息和静态简档信息。

6. 发明授权

US07989793B2 Electrical device using phase change material, phase change memory device using solid state reaction and method for fabricating the same 有权
标题翻译：使用相变材料的电气装置，使用固态反应的相变存储装置及其制造方法
公开(公告)号：US07989793B2
公开(公告)日：2011-08-02
申请号：US12326776
申请日：2008-12-02
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1608 , H01L45/1666
摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
摘要翻译：提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层形成第二反应物层的材料。相变存储器件消耗低功率并以高速运行。

7. 发明申请

US20100275166A1 USER ADAPTIVE GESTURE RECOGNITION METHOD AND USER ADAPTIVE GESTURE RECOGNITION SYSTEM 审中-公开
标题翻译：用户自适应姿态识别方法和用户自适应语音识别系统
公开(公告)号：US20100275166A1
公开(公告)日：2010-10-28
申请号：US12745800
申请日：2008-08-29
申请人： Jong Hong Jeon , Seung Yun Lee , Sung Han Kim , Kang Chan Lee
发明人： Jong Hong Jeon , Seung Yun Lee , Sung Han Kim , Kang Chan Lee
IPC分类号： G06F3/033
CPC分类号： G06F3/017 , G06F3/0346 , G06F2200/1638 , H04M1/00
摘要： The present invention relates to a user adaptive gesture recognition method and a user adaptive gesture recognition system. The present invention relates to a user adaptive gesture recognition method and a user adaptive gesture recognition system that, by using a terminal equipped with an acceleration sensor, can drive mobile application software in the terminal or can process a function of an application program for browsing to be displayed on the terminal based on acceleration information. Accordingly, the user gesture can be recognized and processed by using an acceleration sensor installed in a mobile apparatus. In addition, the user adaptive gesture can be stored in the mobile apparatus by using the acceleration sensor, and thus a mobile application can be easily utilized with a simple gesture.
摘要翻译：本发明涉及用户自适应手势识别方法和用户自适应手势识别系统。本发明涉及一种用户自适应手势识别方法和用户自适应手势识别系统，其通过使用配备有加速度传感器的终端可以驱动终端中的移动应用软件，或者可以处理用于浏览的应用程序的功能根据加速度信息显示在终端上。因此，可以通过使用安装在移动装置中的加速度传感器来识别和处理用户手势。此外，用户自适应手势可以通过使用加速度传感器存储在移动装置中，因此可以用简单的手势容易地利用移动应用程序。

8. 发明授权

US07547913B2 Phase-change memory device using Sb-Se metal alloy and method of fabricating the same 有权
标题翻译：使用Sb-Se金属合金的相变存储器件及其制造方法
公开(公告)号：US07547913B2
公开(公告)日：2009-06-16
申请号：US12063991
申请日：2006-08-30
申请人： Sung Min Yoon , Nam Yeal Lee , Sang Ouk Ryu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Byoung Gon Yu
发明人： Sung Min Yoon , Nam Yeal Lee , Sang Ouk Ryu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Byoung Gon Yu
IPC分类号： H01L29/08
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.
摘要翻译：提供了使用具有低熔点和高结晶速度的相变材料的相变存储器件及其制造方法。相变记忆装置包括与通过孔露出并填充孔的发热电极层接触的锑（Sb） - 硒（Se）硫族化物SbxSe100-x相变材料层。由于在相变材料层中使用SbxSe100-x，所以可以制造比GST存储器件更高速，更低功耗的相变存储器件。

9. 发明申请

US20070260707A1 Method and Apparatus for Providing Web Services Using Preference Information 审中-公开
标题翻译：使用偏好信息提供Web服务的方法和装置
公开(公告)号：US20070260707A1
公开(公告)日：2007-11-08
申请号：US11792979
申请日：2005-10-14
申请人： Kang Lee , Won-Suk Lee , Jong-Hong Jeon , Seung Yun Lee , Min-Kyo In , In-Dong Jang , Tae-Wan Yoo
发明人： Kang Lee , Won-Suk Lee , Jong-Hong Jeon , Seung Yun Lee , Min-Kyo In , In-Dong Jang , Tae-Wan Yoo
IPC分类号： G06F15/16
CPC分类号： G06F9/54 , G06F2209/542 , H04L67/02 , H04L67/04 , H04L67/28 , H04L67/2823 , H04L67/30
摘要： Provided is a method and apparatus for providing web services by which the performance of web services is improved and exchanges of a large quantity of messages are effectively supported. The method includes: preparing the preference information, which pre-describes information required by a web services provider, to provide web services requested by a web services requestor, and the web services provider interacting with the preference information to minimize the number of messages exchanged between the web services requestor and the web services provider.
摘要翻译：提供了一种用于提供web服务的方法和装置，通过该方法和装置改进了web服务的性能，并且有效地支持了大量消息的交换。该方法包括：准备预先描述web服务提供商所需的信息以提供Web服务请求者请求的web服务的偏好信息，以及与优选信息交互的Web服务提供者，以最小化在 Web服务请求者和Web服务提供商。

10. 发明授权

US09066006B2 Image photographing device and control method thereof 有权
标题翻译：图像拍摄装置及其控制方法
公开(公告)号：US09066006B2
公开(公告)日：2015-06-23
申请号：US13596373
申请日：2012-08-28
申请人： Seung Yun Lee , Yi Lee Seo , Ji Young Yun , Isaac Lee
发明人： Seung Yun Lee , Yi Lee Seo , Ji Young Yun , Isaac Lee
IPC分类号： H04N5/222 , H04N5/225 , G03B17/18 , H04N5/232
CPC分类号： H04N5/23216 , H04N5/23222
摘要： Disclosed herein are an image photographing device that includes a display unit displaying a preview image and a control method thereof. The image photographing device includes a judgment unit that judges whether or not lens blind has occurred and a photographing control unit that executes photographing after a predetermined time following an input of a photographing execution command has elapsed, if the judgment unit judges that lens blind has occurred. Even if a user shields a lens by his/her hand during a process of touching the screen of the display unit or pressing a photographing button to execute photographing, photographing is executed after the user's hand has moved out of the visual field of the lens, and thus an image desired by the user may be obtained without disturbance due to lens blind.
摘要翻译：这里公开了一种图像拍摄装置，其包括显示预览图像的显示单元及其控制方法。图像拍摄装置包括判断单元，判断单元是否已经发生了镜头遮挡;以及拍摄控制单元，如果判断单元判断出镜头失真已经发生，则在经过了拍摄执行命令的输入之后的预定时间之后执行拍摄的拍摄控制单元。即使用户在触摸显示单元的屏幕或按压拍摄按钮执行拍摄的过程中用手遮住透镜，在用户的手已经移出透镜的视场之后执行拍摄，因此可以获得用户所期望的图像，而不会由于镜头遮挡而产生干扰。

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