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1. 发明授权

US08525196B2 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US08525196B2
公开(公告)日：2013-09-03
申请号：US13090757
申请日：2011-04-20
申请人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
摘要翻译：氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

2. 发明授权

US07977134B2 Nitride-based semiconductor light emitting diode and method of manufacturing the same 有权
标题翻译：氮化物半导体发光二极管及其制造方法
公开(公告)号：US07977134B2
公开(公告)日：2011-07-12
申请号：US11543798
申请日：2006-10-06
申请人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
摘要翻译：氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

3. 发明授权

US07994525B2 Nitride-based semiconductor light emitting diode 有权
公开(公告)号：US07994525B2
公开(公告)日：2011-08-09
申请号：US12967558
申请日：2010-12-14
申请人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/06
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.

4. 发明授权

US07893447B2 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US07893447B2
公开(公告)日：2011-02-22
申请号：US12153842
申请日：2008-05-27
申请人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
摘要翻译：氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

5. 发明申请

US20110193060A1 NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DIODE 有权
标题翻译：基于氮化物的半导体发光二极管
公开(公告)号：US20110193060A1
公开(公告)日：2011-08-11
申请号：US13090757
申请日：2011-04-20
申请人： Hyuk Min LEE , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min LEE , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/32 , H01L33/06
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
摘要翻译：氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

6. 发明申请

US20110084305A1 NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DIODE 有权
公开(公告)号：US20110084305A1
公开(公告)日：2011-04-14
申请号：US12967558
申请日：2010-12-14
申请人： Hyuk Min LEE , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min LEE , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/42 , H01L33/32
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.

7. 发明申请

US20080224168A1 Intride-based semiconductor light emitting diode and method of manufacturing the same 有权
标题翻译：基于Intride的半导体发光二极管及其制造方法
公开(公告)号：US20080224168A1
公开(公告)日：2008-09-18
申请号：US12153842
申请日：2008-05-27
申请人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
发明人： Hyuk Min Lee , Hyun Kyung Kim , Dong Joon Kim , Hyoun Soo Shin
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
摘要翻译：氮化物系半导体LED包括：基板; 在该基板上形成的n型氮化物半导体层; 依次形成在n型氮化物半导体层的预定区域上的有源层和p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在所述透明电极上的p电极焊盘，所述p电极焊盘与所述p型氮化物半导体层的外缘线隔开50〜200μm; 以及形成在n型氮化物半导体层上的n电极焊盘。

8. 发明授权

US07235818B2 Flip chip type nitride semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：倒装芯片型氮化物半导体发光器件及其制造方法
公开(公告)号：US07235818B2
公开(公告)日：2007-06-26
申请号：US10861511
申请日：2004-06-07
申请人： Hyun Kyung Kim , Yong Chun Kim , Hyoun Soo Shin
发明人： Hyun Kyung Kim , Yong Chun Kim , Hyoun Soo Shin
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Disclosed herein are a flip chip type nitride semiconductor light emitting device, which comprises a substrate for growing a nitride semiconductor material, an n-type nitride semiconductor layer formed on the substrate, an active layer formed on at least a part of the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, a bonding force providing layer formed on the p-type nitride semiconductor layer and adapted to provide a bonding force relative to the p-type nitride semiconductor layer, a reflective electrode layer formed on the bonding force providing layer, and adapted to reflect light produced in the active layer toward the substrate and to diffuse electric current, and a cap layer formed on the reflective electrode layer, and adapted to provide a bonding force between the reflective electrode layer and a bonding metal and to reduce contact resistance.
摘要翻译：本文公开了一种倒装芯片型氮化物半导体发光器件，其包括用于生长氮化物半导体材料的衬底，形成在衬底上的n型氮化物半导体层，形成在n型氮化物半导体的至少一部分上的有源层氮化物半导体层，形成在有源层上的p型氮化物半导体层，形成在p型氮化物半导体层上并适于提供相对于p型氮化物半导体层的结合力的接合力提供层，反射电极层，形成在所述接合力提供层上，并且适于将在所述有源层中产生的光朝向所述衬底反射并扩散电流;以及覆盖层，形成在所述反射电极层上，并且适于在所述反射层之间提供接合力电极层和接合金属，并降低接触电阻。

9. 发明授权

US07294864B2 Flip chip type nitride semiconductor light-emitting diode 有权
标题翻译：倒装芯片型氮化物半导体发光二极管
公开(公告)号：US07294864B2
公开(公告)日：2007-11-13
申请号：US10925934
申请日：2004-08-26
申请人： Dong Joon Kim , Hyun Kyung Kim
发明人： Dong Joon Kim , Hyun Kyung Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/387 , H01L33/44
摘要： A flip chip type nitride semiconductor light-emitting diode includes a light-transmissive substrate for growing nitride single crystals; an n-type nitride semiconductor layer formed on the light-transmissive substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a mesh-type dielectric layer formed on the p-type nitride semiconductor layer and having a mesh structure with a plurality of open regions in which the p-type nitride semiconductor layer is exposed; a highly reflective ohmic contact layer formed on the mesh-type dielectric layer and the open regions in which the p-type nitride semiconductor layer is exposed; and a p-bonding electrode and an n-electrode formed on the highly reflective ohmic contact layer and the n-type nitride semiconductor layer, respectively.
摘要翻译：倒装芯片型氮化物半导体发光二极管包括用于生长氮化物单晶的透光基板; 形成在所述透光性基板上的n型氮化物半导体层; 形成在所述n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在所述p型氮化物半导体层上并且具有其中露出所述p型氮化物半导体层的多个开放区域的网状结构的网状电介质层; 形成在网状介电层上的高反射欧姆接触层和露出p型氮化物半导体层的开放区域; 以及分别形成在高反射欧姆接触层和n型氮化物半导体层上的p型接合电极和n电极。

10. 发明授权

US07173288B2 Nitride semiconductor light emitting device having electrostatic discharge (ESD) protection capacity 有权
标题翻译：氮化物半导体发光器件具有静电放电（ESD）保护能力
公开(公告)号：US07173288B2
公开(公告)日：2007-02-06
申请号：US11053906
申请日：2005-02-10
申请人： Kyu Han Lee , Hyun Kyung Kim , Je Won Kim , Dong Joon Kim
发明人： Kyu Han Lee , Hyun Kyung Kim , Je Won Kim , Dong Joon Kim
IPC分类号： H01L29/22
CPC分类号： H01L27/15 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A nitride semiconductor light emitting device including a light emitting diode and a diode formed on a single substrate, in which the light emitting diode and the diode use a common electrode. According to the present invention, an active layer and a p-type nitride semiconductor layer are each divided into a first region and a second region by an insulative isolation layer, and an ohmic contact layer is formed on the p-type nitride semiconductor layer contained in the first region. A p-type electrode is formed on the ohmic contact layer and is extended to the p-type nitride semiconductor layer contained in the second region. An n-type electrode is formed on the p-type nitride semiconductor layer contained in the second region, passes through the p-type nitride semiconductor layer and the active layer contained in the second region, and is connected to the first n-type nitride semiconductor layer.
摘要翻译：一种氮化物半导体发光器件，包括在单个衬底上形成的发光二极管和二极管，其中发光二极管和二极管使用公共电极。根据本发明，通过绝缘隔离层将有源层和p型氮化物半导体层分别分成第一区域和第二区域，在包含的p型氮化物半导体层上形成欧姆接触层在第一个地区。在欧姆接触层上形成p型电极，并延伸到包含在第二区域中的p型氮化物半导体层。在包含在第二区域的p型氮化物半导体层上形成n型电极，穿过p型氮化物半导体层和包含在第二区域中的有源层，并连接到第一n型氮化物半导体层。

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