会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 8. 发明授权
    • Umbrella for automobile
    • 汽车雨伞
    • US08276607B2
    • 2012-10-02
    • US12751878
    • 2010-03-31
    • Jonathan Kim
    • Jonathan Kim
    • E04H15/06
    • A45B11/00A45B19/00A45B23/00A45B2023/0025A45B2023/0093
    • A retractable umbrella includes a retractable tube, a pulling rod, a rainshade screen, and a drip water collector. The retractable tube comprises retractable reels, and it is attached on a door frame of a car. Each of the retractable reels is disposed in the retractable tube. The pulling rod is attached to a rim portion of the door accepting frame of the car. The rainshade screen comprises an outer edge, an inner edge, a front edge, and a rear edge. The outer edge is attached to the retractable reels of the retractable tube. The inner edge is attached to the pulling rod. The front edge connects front portions of the inner and outer edges. The rear edge connects rear portions of the inner and outer edges. The drip water collector collects water dripped from the rainshade screen, and is disposed at an inner portion of door of the car.
    • 可伸缩伞包括可伸缩管,拉杆,雨伞筛和滴水收集器。 可伸缩管包括可收回的卷轴,并且其连接在汽车的门框上。 每个可伸缩卷轴设置在可缩回管中。 拉杆附接到轿厢的门接收框架的边缘部分。 雨刷屏幕包括外边缘,内边缘,前边缘和后边缘。 外边缘连接到可伸缩管的可伸缩卷轴上。 内边缘连接到拉杆上。 前边缘连接内边缘和外边缘的前部。 后边缘连接内边缘和外边缘的后部。 滴水收集器收集从雨淋屏幕滴下的水,并且设置在轿厢门的内部。
    • 9. 发明申请
    • LINE WIDTH ROUGHNESS CONTROL WITH ARC LAYER OPEN
    • 线宽宽度控制与弧层开放
    • US20090087996A1
    • 2009-04-02
    • US12210777
    • 2008-09-15
    • Kyeong-Koo ChiJonathan Kim
    • Kyeong-Koo ChiJonathan Kim
    • H01L21/3065
    • H01L21/31116H01L21/31144
    • To achieve the foregoing and in accordance with the purpose of the present invention a method for etching an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The ARC layer is opened, and features are etched into the etch layer through the patterned mask. The opening the ARC layer includes (1) providing an ARC opening gas comprising a halogen containing gas, COS, and an oxygen containing gas, (2) forming a plasma from the ARC opening gas to open the ARC layer, and (3) stopping providing the ARC opening gas to stop the plasma. The patterned mask may be a photoresist (PR) mask having a line-space pattern. COS in the ARC opening gas reduces line width roughness (LWR) of the patterned features of the etch layer.
    • 为了实现上述目的,并且根据本发明的目的,提供了一种用于蚀刻设置在图案化掩模下面的抗反射涂层(ARC)层下方的蚀刻层的方法。 ARC层被打开,并且通过图案化掩模将特征蚀刻到蚀刻层中。 ARC层的开口包括(1)提供包含含卤素气体COS和含氧气体的ARC开口气体,(2)从ARC开口气体形成等离子体以打开ARC层,以及(3)停止 提供ARC打开的气体来停止等离子体。 图案化掩模可以是具有线间隔图案的光致抗蚀剂(PR)掩模。 ARC打开气体中的COS降低蚀刻层的图案化特征的线宽粗糙度(LWR)。
    • 10. 发明申请
    • METHOD AND APPARATUS FOR PROVIDING MASK IN SEMICONDUCTOR PROCESSING
    • 用于在半导体处理中提供掩模的方法和装置
    • US20070269721A1
    • 2007-11-22
    • US11383835
    • 2006-05-17
    • Yoojin KimCamelia RusuJonathan Kim
    • Yoojin KimCamelia RusuJonathan Kim
    • C03C15/00C03C25/68B44C1/22C23F1/00G03F1/00
    • H01L21/31144H01J37/32082H01J2237/3342H01L21/0273H01L21/31122H01L21/32139
    • Disclosed is a method for processing a two layer mask for use in fabrication of semiconductor devices whereby the critical dimension (CD) of a semiconductor device being fabricated with the mask can be controlled. After forming a carbon mask layer and a silicon containing photoresist layer on the carbon mask, a two-step process forms openings in the carbon mask layer, as required for subsequent device fabrication. The structure is placed in a plasma processing chamber, and an oxygen plasma is employed to partially etch the carbon layer. The oxygen plasma reacts with silicon in the photoresist to form a hard silicon oxide layer on the surface of the photoresist. A hydrogen plasma is then employed to complete the etch through the carbon layer with a reduced critical dimension. Damage to the silicon containing photoresist layer is kept to a minimum during the plasma etch process by limiting the low frequency RF power.
    • 公开了一种用于制造半导体器件的双层掩模的处理方法,由此可以控制用掩模制造的半导体器件的临界尺寸(CD)。 在碳掩模上形成碳掩模层和含硅光致抗蚀剂层之后,根据随后的器件制造的需要,两步法在碳掩模层中形成开口。 将该结构放置在等离子体处理室中,并且使用氧等离子体来部分蚀刻碳层。 氧等离子体与光致抗蚀剂中的硅反应,在光致抗蚀剂的表面上形成硬的氧化硅层。 然后使用氢等离子体来完成通过具有减小的临界尺寸的碳层的蚀刻。 通过限制低频RF功率,在等离子体蚀刻工艺期间,使含硅光致抗蚀剂层的损伤保持最小。