专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090285082A1 ELECTRIC FIELD READ/WRITE HEAD, METHOD OF MANUFACTURING THE ELECTRIC FIELD READ/WRITE HEAD, AND INFORMATION STORAGE DEVICE INCLUDING THE ELECTRIC FIELD READ/WRITE HEAD 审中-公开
标题翻译：电场读/写头，制造电场读/写头的方法和包括电场读/写头的信息存储装置
公开(公告)号：US20090285082A1
公开(公告)日：2009-11-19
申请号：US12251072
申请日：2008-10-14
申请人： Hyoung-soo KO , In-kyeong YOO , Ju-hwan JUNG , Chul-min PARK
发明人： Hyoung-soo KO , In-kyeong YOO , Ju-hwan JUNG , Chul-min PARK
IPC分类号： G11B9/00 , H01L21/00
CPC分类号： G11B9/02 , B82Y10/00 , G11B9/1409
摘要： An electric field head includes a body portion and a read head having a channel layer provided on an air bearing surface (ABS) of the body portion facing a recording medium and a source and a drain contacting both ends of the channel layer. The electric field head is manufactured by defining a head forming portion of a substrate, separating the head forming portion from the substrate, forming an ABS pattern on a side surface of the separated head forming portion, and forming a channel layer for a read head on a surface of the head forming portion where the ABS pattern is formed. An information storage device includes a ferroelectric recording medium and the electric field head.
摘要翻译：电场头包括主体部分和读取头，其具有设置在主体部分面向记录介质的空气轴承表面（ABS）上的通道层，以及与沟道层两端接触的源极和漏极。通过限定基板的头部形成部分来制造电场磁头，将磁头形成部分与基板分离，在分离的磁头形成部分的侧表面上形成ABS图案，并且形成用于读取磁头的通道层形成ABS图案的头部形成部分的表面。信息存储装置包括铁电记录介质和电场磁头。

2. 发明申请

US20090161524A1 READING/WRITING HEAD USING ELECTRIC FIELD, DATA READING/WRITING APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：使用电场的读/写头，包括其的数据读/写装置及其制造方法
公开(公告)号：US20090161524A1
公开(公告)日：2009-06-25
申请号：US12142048
申请日：2008-06-19
申请人： Chul-min PARK , Ju-hwan JUNG , Hyoung-soo KO
发明人： Chul-min PARK , Ju-hwan JUNG , Hyoung-soo KO
IPC分类号： G11B9/00
CPC分类号： G11B9/02 , G11B5/3173
摘要： A data reading/writing head reading/writing data from/to a ferroelectric recording medium by using an electric field effect, includes a semiconductor body having a first plane on which an air bearing pattern is formed and a second plane crossing the first plane. A sensing unit is located on the second plane and reads data written to the ferroelectric recording medium, wherein the second plane is separated from the first plane, and a floating gate is disposed on the sensing unit, wherein an end of the floating gate extends to the first plane to guide an electric field from the ferroelectric recording medium to the sensing unit.
摘要翻译：通过使用电场效应从/向铁电记录介质读取/写入数据的数据读/写头包括半导体本体，其具有形成有空气轴承图案的第一平面和与第一平面交叉的第二平面。感测单元位于第二平面上并读取写入铁电记录介质的数据，其中第二平面与第一平面分离，并且浮动栅极设置在感测单元上，其中浮动栅极的一端延伸到引导从铁电记录介质到感测单元的电场的第一平面。

3. 发明申请

US20080078239A1 SEMICONDUCTOR PROBE HAVING WEDGE SHAPE RESISTIVE TIP AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有楔形电阻提示的半导体探针及其制造方法
公开(公告)号：US20080078239A1
公开(公告)日：2008-04-03
申请号：US11750404
申请日：2007-05-18
申请人： Hyoung-soo KO , Ju-hwan JUNG , Seung-bum HONG , Hong-sik PARK , Chul-min PARK
发明人： Hyoung-soo KO , Ju-hwan JUNG , Seung-bum HONG , Hong-sik PARK , Chul-min PARK
IPC分类号： G01B5/28 , H01L21/00
CPC分类号： G01Q60/30 , G01Q60/40
摘要： A semiconductor probe having a wedge shape resistive tip and a method of fabricating the semiconductor probe is provided. The semiconductor probe includes a resistive tip that is doped with a first impurity, has a resistance region doped with a low concentration of a second impurity having an opposite polarity to the first impurity, and has first and second semiconductor electrode regions doped with a high concentration of the second impurity on both side slopes of the resistive tip. The probe also includes a cantilever having the resistive tip on an edge portion thereof, and an end portion of the resistive tip has a wedge shape
摘要翻译：提供具有楔形电阻端头的半导体探针和制造半导体探针的方法。半导体探针包括掺杂有第一杂质的电阻尖端，具有掺杂有与第一杂质具有相反极性的低浓度第二杂质的电阻区域，并且具有掺杂高浓度的第一和第二半导体电极区域的第二杂质在电阻尖端的两个侧面上。探针还包括在其边缘部分上具有电阻尖端的悬臂，并且电阻尖端的端部具有楔形

4. 发明申请

US20080138924A1 METHOD OF FABRICATING ELECTRIC FIELD SENSOR HAVING ELECTRIC FIELD SHIELD 失效
标题翻译：制造电场感应电场传感器的方法
公开(公告)号：US20080138924A1
公开(公告)日：2008-06-12
申请号：US11872065
申请日：2007-10-15
申请人： Chul-min PARK , Hyoung-soo Ko , Seung-bum Hong
发明人： Chul-min PARK , Hyoung-soo Ko , Seung-bum Hong
IPC分类号： H01L21/44
CPC分类号： G01Q60/30
摘要： A method of manufacturing an electric field sensor having an electric field shield. The method includes providing a substrate doped with a first impurity; forming a resistive tip having a resistance region doped with a low concentration of a second impurity at an apex of a protruding portion of the substrate, and first and second semiconductor electrode regions doped with a high concentration of the second impurity on both slopes of the protruding portion with the resistive region therebetween, wherein the second impurity has a polarity opposite to that of the first impurity; forming a dielectric layer on the resistive tip; forming a mask having a high aspect ratio on the dielectric layer; depositing a metal layer on the dielectric layer; and exposing the dielectric layer formed on the resistance region through the metal layer by removing the mask.
摘要翻译：一种制造具有电场屏蔽的电场传感器的方法。该方法包括提供掺杂有第一杂质的衬底; 在所述基板的突出部的顶点形成具有掺杂有低浓度的第二杂质的电阻区域的电阻端头，以及在所述突出部的两个斜面上掺杂有高浓度的所述第二杂质的第一和第二半导体电极区域其中所述第二杂质具有与所述第一杂质的极性相反的极性; 在电阻尖端上形成电介质层; 在介电层上形成具有高纵横比的掩模; 在介电层上沉积金属层; 并且通过去除掩模，使形成在电阻区域上的电介质层通过金属层曝光。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式