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1. 发明授权

US5770851A Compact optical logic operator array 失效
标题翻译：紧凑型光逻辑运算器阵列
公开(公告)号：US5770851A
公开(公告)日：1998-06-23
申请号：US713535
申请日：1996-09-13
申请人： Hyo-Hoon Park , Kwang-Joon Kim , Kyung-Sook Hyun , O-Kyun Kwon , Seok-Ho Song , Byueng-Su Yoo , Hye-Yong Chu
发明人： Hyo-Hoon Park , Kwang-Joon Kim , Kyung-Sook Hyun , O-Kyun Kwon , Seok-Ho Song , Byueng-Su Yoo , Hye-Yong Chu
IPC分类号： G02B6/43 , G02F3/02 , H01J40/14
CPC分类号： G02F3/028 , G02B6/43
摘要： An improved parallel optical logic operator provides a path for light to pass through substrates in which a light source and an optical logic device are arranged. An optical logic device operates by transmission of light forwarded to a predetermined direction. This increases integration efficiency of the system by eliminating optical parts for changing the light path. A unit chip includes a laser array for generating a predetermined light in accordance with an electrical signal for a logic process, a laser array substrate on which via holes are formed for passing light, a microlens array for converting the light beam emitted from each laser device of the laser array into a parallel light beam for passing through the via hole, and an optical logic circuit array formed with a combination of an S-SEED which performs a logic function by transmission of the light signal through an optical window in S-SEED. A plurality of unit chips are laminated so that the light emitted from the laser device of one of the unit chips passes through an optical logic circuit of a corresponding unit chip and can be made incident on the optical logic circuit in the next unit chip through a via hole.
摘要翻译：改进的并行光逻辑运算器提供光通过其中布置光源和光逻辑器件的衬底的路径。光逻辑器件通过传输转发到预定方向的光来操作。这通过消除用于改变光路的光学部件来提高系统的集成效率。单元芯片包括用于根据用于逻辑处理的电信号产生预定光的激光阵列，其上形成有用于通过光的通孔的激光阵列基板，用于转换从每个激光装置发射的光束的微透镜阵列的激光器阵列的平行光束通过通孔;以及光学逻辑电路阵列，其形成有S-SEED的组合，S-SEED通过S-SEED中的光学窗口传输光信号来执行逻辑功能。多个单位芯片被层叠，使得从单个芯片之一的激光装置发射的光通过相应的单元芯片的光学逻辑电路，并且可以通过一个单元芯片入射到下一个单元芯片中的光学逻辑电路上通孔。

2. 发明授权

US5773319A Method for producing a hydrogenated vertical-cavity surface-emitting laser 失效
标题翻译：用于制造氢化垂直腔表面发射激光器的方法
公开(公告)号：US5773319A
公开(公告)日：1998-06-30
申请号：US842960
申请日：1997-04-25
申请人： Hye-Yong Chu , Byueng-Su Yoo , Hyo-Hoon Park
发明人： Hye-Yong Chu , Byueng-Su Yoo , Hyo-Hoon Park
IPC分类号： H01S5/028 , H01S5/183 , H01S5/20 , H01L21/20 , H01S3/19
CPC分类号： H01S5/18308 , H01S5/0282 , H01S5/2059 , H01S5/423
摘要： A method for producing a vertical-cavity surface-emitting laser, includes the steps of: forming a bottom mirror layer, an active layer and a top mirror layer on a semiconductor substrate; forming an antireflection layer on a rear surface of the semiconductor substrate; selectively etching peripheral portions of the antireflection layer to form a first electrode; defining laser emission portions through etching processing; forming a hydrogenated barrier over an entire surface of the resultant structure; forming a post; forming a passivation layer through the hydrogenating of the exposed top mirror layer and the portions of the active layer; forming a planarization film after the partial exposure of the top mirror and forming a second electrode pad to which the exposed top mirror layer contacts.
摘要翻译：一种用于制造垂直腔表面发射激光器的方法，包括以下步骤：在半导体衬底上形成底镜层，有源层和顶镜层; 在半导体衬底的后表面上形成抗反射层; 选择性地蚀刻抗反射层的周边部分以形成第一电极; 通过蚀刻处理定义激光发射部分; 在所得结构的整个表面上形成氢化屏障; 组建岗位; 通过暴露的顶镜层和有源层的部分的氢化形成钝化层; 在顶部反射镜部分曝光之后形成平坦化膜，并形成露出的顶部反射镜层与之接触的第二电极焊盘。

3. 发明授权

US5895224A Three-dimensional cavity surface emitting laser structure and fabrication method thereof 失效
标题翻译：三维腔体表面发射激光器结构及其制造方法
公开(公告)号：US5895224A
公开(公告)日：1999-04-20
申请号：US915298
申请日：1997-08-20
申请人： Hyo-Hoon Park , Hye-Yong Chu , Byueng-Su Yoo
发明人： Hyo-Hoon Park , Hye-Yong Chu , Byueng-Su Yoo
IPC分类号： H01S5/10 , H01S5/183 , H01L21/20
CPC分类号： H01S5/0614 , H01S5/18305 , H01S2301/176 , H01S5/0425 , H01S5/0655 , H01S5/18347
摘要： A three-dimensional cavity surface emitting laser structure and a fabrication method thereof which are capable of effectively controlling the characteristic of the transverse mode by applying independent electrical field to a side wall of an active region and concentrating a current flow along, inside of the active region. The structure includes a protrusion portion of a bottom mirror region formed on a substrate, an insulation film formed in a sidewall of a laser post having an active region extended from the protrusion and a top mirror region, and a sidewall metal mirror layer electrically separated from n-type and p-type electrodes for independently applying an electric field.
摘要翻译：一种三维空腔表面发射激光器结构及其制造方法，其能够通过对有源区域的侧壁施加独立的电场并且沿着活动的内部集中电流来有效地控制横向模式的特性地区。该结构包括形成在基板上的底部反射镜区域的突出部分，形成在激光束的侧壁中的绝缘膜，其具有从突起延伸的有源区域和顶部反射镜区域，以及侧壁金属镜面层，用于独立施加电场的n型和p型电极。

4. 发明授权

US5661076A Method for fabricating a vertical-cavity surface-emitting laser diode 失效
标题翻译：用于制造垂直腔表面发射激光二极管的方法
公开(公告)号：US5661076A
公开(公告)日：1997-08-26
申请号：US623817
申请日：1996-03-29
申请人： Byeung-Su Yoo , Hyo-Hoon Park , Hye-Yong Chu , Min-Soo Park
发明人： Byeung-Su Yoo , Hyo-Hoon Park , Hye-Yong Chu , Min-Soo Park
IPC分类号： H01S5/183 , H01S5/42 , H01L21/20
CPC分类号： H01S5/18347 , H01S2301/166 , H01S5/2218 , H01S5/423
摘要： A method for non-active processing of an etched surface in a vertical-cavity surface-emitting laser diode is provided. In order to obtain a stable single fundamental transverse mode, at a low temperature of 100 to 300 degrees, an amorphous GaAs is deposited on a surface of an etched active layer and an etched cavity. Also, a bottom emitting laser is provided which is formed by, with the metal electrode as a mask, etching the top mirror layer and the active layer, depositing the amorphous GaAs onto the etched portion and planarizing the deposited GaAs layer and depositing p-type metal pad over the amorphous GaAs around the formed laser device. Also, a top emission type laser is provided which is formed by, with a photoresist as a mask, etching the top mirror layer and the active layer, planarizing the GaAs layer and depositing p-type metal pad containing a window for light emission which is made smaller than laser area over the amorphous GaAs around the formed laser device. Thus, a more stable single fundamental transverse mode than in the conventional device can be obtained.
摘要翻译：提供了一种在垂直腔表面发射激光二极管中非侵蚀性处理蚀刻表面的方法。为了获得稳定的单个基本横模，在100至300度的低温下，非晶GaAs沉积在蚀刻的有源层和蚀刻腔的表面上。另外，提供了以金属电极为掩模形成的底部发射激光器，蚀刻上镜面层和有源层，将非晶GaAs沉积到蚀刻部分上并使沉积的GaAs层平坦化并沉积p型在形成的激光器件周围的非晶GaAs上的金属焊盘。另外，提供了以光致抗蚀剂为掩模形成的顶部发射型激光器，蚀刻上镜面层和有源层，使GaAs层平坦化并沉积含有用于发光的窗口的p型金属焊盘，在形成的激光器件周围的非晶GaAs周围比激光区域小。因此，可以获得比常规装置更稳定的单根横向模式。

5. 发明授权

US06498802B1 Organic micro-cavity laser 失效
标题翻译：有机微腔激光器
公开(公告)号：US06498802B1
公开(公告)日：2002-12-24
申请号：US09475118
申请日：1999-12-30
申请人： Hye-Yong Chu , Jeong-Ik Lee , Seong-Hyun Kim , Lee-Mi Do , Heuk Park , Do-Hoon Hwang , Tae-Hyoung Zyung
发明人： Hye-Yong Chu , Jeong-Ik Lee , Seong-Hyun Kim , Lee-Mi Do , Heuk Park , Do-Hoon Hwang , Tae-Hyoung Zyung
IPC分类号： H01S314
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/18341 , H01S5/18369 , H01S5/343 , H01S5/36
摘要： An organic micro-cavity lasers which can reduce an optical loss and derive the lasing by the electrical pumping is disclosed. The laser of the present invention has a bottom mirror layer formed on a substrate, a bottom electrode formed on the bottom mirror layer, an active layer formed on the bottom electrode, a top electrode formed on a peripheral portion of the active layer and a top mirror layer formed on the active layer except the peripheral portion. Therefore, the laser of the present invention can greatly reduce the optical loss since it has the bottom mirror layer, the active layer and the top mirror layer. Also, the injection of current can sufficiently accomplished because the top electrode having a ring shape is formed at the peripheral portion of the active layer so as to inject the current to the active layer.
摘要翻译：公开了一种有机微腔激光器，其可以减少光学损耗并通过电泵浦导出激光。本发明的激光器具有形成在基板上的底镜层，形成在底镜层上的底电极，形成在底电极上的有源层，形成在有源层周边部分上的顶电极和顶电极除了外围部分之外，在活性层上形成的镜层。因此，本发明的激光器由于具有底镜层，有源层和顶镜层，因此可以大大减少光损耗。此外，由于在有源层的周边部分形成具有环形的顶部电极，以便将电流注入到有源层，所以可以充分地实现电流注入。

6. 发明授权

US5670385A Method for fabricating an optical controlled resonant tunneling oscillator 失效
标题翻译：光控谐振隧道振荡器的制造方法
公开(公告)号：US5670385A
公开(公告)日：1997-09-23
申请号：US501874
申请日：1995-07-13
申请人： Hye-Yong Chu
发明人： Hye-Yong Chu
IPC分类号： H01L31/10 , H01L29/88 , H01L31/00 , H01L31/0352 , H03B7/06 , H01L31/18
CPC分类号： B82Y30/00 , B82Y10/00 , H01L31/0352 , Y10S438/979
摘要： An optical controlled resonant tunneling oscillator utilizing variation of a resonant tunneling oscillator in accordance with a negative differential resistance, a series resistance and a static capacitance varied in response to the intensity of light when light is incident on a resonant tunneling device having a double barrier quantum well structure and a method for fabricating the same are disclosed. The oscillator modulates the frequency over 2 or 3 levels in response to the intensity of incident light as compared to a conventional photoelectric system that modulates the frequency in response to the ON/OFF electric signal, thereby simplifying the system. The oscillator controls the resonant tunneling at high speed level with light enably processing a signal from tens to hundreds of GHz.
摘要翻译：利用根据负差分电阻，串联电阻和静态电容的谐振隧穿振荡器的变化的光控谐振隧道振荡器，当光入射到具有双势垒量子的谐振隧穿装置时响应于光的强度而变化井结构及其制造方法。与响应于ON / OFF电信号调制频率的常规光电系统相比，响应于入射光强度，振荡器调制频率超过2或3级，从而简化了系统。振荡器以高速级控制谐振隧穿，可以处理数十到数百GHz的信号。

7. 发明授权

US5569933A Optical controlled resonant tunneling oscillator 失效
标题翻译：光控谐振隧道振荡器
公开(公告)号：US5569933A
公开(公告)日：1996-10-29
申请号：US345779
申请日：1994-11-22
申请人： Hye-Yong Chu , Pyong-Woon Park
发明人： Hye-Yong Chu , Pyong-Woon Park
IPC分类号： H01L31/10 , H01L29/88 , H01L31/00 , H01L31/0352 , H03B7/06 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： B82Y30/00 , B82Y10/00 , H01L31/0352 , Y10S438/979
摘要： An optical controlled resonant tunneling oscillator utilizing an oscillation variation characteristic of a resonant tunneling oscillator in accordance with a negative differential resistance, a series resistance and a static capacitance varied with an intensity of light when the light is incident on a resonant tunneling device having a double barrier quantum well structure and a method for fabricating the same are disclosed. The oscillator can modulate the frequency 2 or 3 levels in response to an intensity of an incident light as compared with the method of a conventioal photoelectric system that modulates the frequency in response to ON/OFF of an electric signal, thereby simplifying the system. The oscillator controls the resonant tunneling at the high speed by light, thereby enabling processing a signal of tens to hundreds GHz.
摘要翻译：根据负差分电阻，串联电阻和静态电容，利用谐振隧穿振荡器的振荡变化特性的光控谐振隧道振荡器，当光入射到具有双重的谐振隧穿装置时，其强度随光强而变化势垒量子阱结构及其制造方法。与响应于电信号的ON / OFF调制频率的常规光电系统的方法相比，振荡器可以响应于入射光的强度来调制频率2或3电平，从而简化了系统。振荡器通过光以高速度控制谐振隧道，从而能够处理数十到数百GHz的信号。

8. 发明授权

US5446293A Resonant tunneling opto-electronic device having a plurality of window layers 失效
标题翻译：具有多个窗口层的谐振隧道光电器件
公开(公告)号：US5446293A
公开(公告)日：1995-08-29
申请号：US338117
申请日：1994-11-09
申请人： Hye-Yong Chu , Pyong-Woon Park , Seon-Gyu Han , Young-Wan Choi , Gyung-Ock Kim
发明人： Hye-Yong Chu , Pyong-Woon Park , Seon-Gyu Han , Young-Wan Choi , Gyung-Ock Kim
IPC分类号： H01L31/10 , H01L31/0352 , H01L27/14 , H01L31/00
CPC分类号： B82Y10/00 , H01L31/0352
摘要： Disclosed is an operation principle and an epitaxial structure of resonant tunneling opto-electronic device. According to the present invention, the photo-generated holes stored in front of the double barrier quantum well structure by light illumination. As a result, a large potential drop occurs in the double barrier quantum well structure. And a peak signal of the opto-electronic resonant tunneling device is generated at a relatively lower voltage illumination to one generated before introducing the light into the device. An amount of photocurrent is 10.sup.3 times and over as compared to the conventional p-i-n diode because a resonant tunneling current is optically controlled by light illumination. So that, it is possible to drive peripheral circuit without use of additional amplifiers for amplifying an output signal from the opto-electronic device.
摘要翻译：公开了谐振隧道光电器件的工作原理和外延结构。根据本发明，通过光照射存储在双重阻挡量子阱结构前面的光生孔。结果，双重势垒量子阱结构中出现大的电位降。光电共振隧穿装置的峰值信号在相对较低的电压照明下产生，并将光引入装置之前产生。与传统的p-i-n二极管相比，光电流量是103倍以上，因为谐振隧穿电流是通过光照射来光学控制的。因此，可以驱动外围电路而不使用用于放大来自光电子器件的输出信号的附加放大器。

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