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1. 发明申请

US20120248401A1 3-DIMENSIONAL GRAPHENE STRUCTURE AND PROCESS FOR PREPARING AND TRANSFERRING THE SAME 有权
标题翻译：三维石墨结构及其制备和转移的方法
公开(公告)号：US20120248401A1
公开(公告)日：2012-10-04
申请号：US13437140
申请日：2012-04-02
申请人： Hyeon-jin Shin , Jae-young Choi , Ji-hoon Park , Joung-real Ahn
发明人： Hyeon-jin Shin , Jae-young Choi , Ji-hoon Park , Joung-real Ahn
IPC分类号： H01L29/02 , H01L21/20 , H01L21/762 , B82Y99/00 , B82Y40/00
CPC分类号： H01L21/02587 , B82Y30/00 , B82Y40/00 , C01B32/188 , H01L21/0237 , H01L21/02378 , H01L21/0243 , H01L21/02491 , H01L21/02527 , H01L21/02612 , H01L21/02658 , H01L29/0657 , H01L29/1606
摘要： A three-dimensional graphene structure, and methods of manufacturing and transferring the same including forming at least one layer of graphene having a periodically repeated three-dimensional shape. The three-dimensional graphene structure is formed by forming a pattern having a three-dimensional shape on a surface of a substrate, and forming the three-dimensional graphene structure having the three-dimensional shape of the pattern by growing graphene on the substrate on which the pattern is formed. The three-dimensional graphene structure is transferred by injecting a gas between the three-dimensional graphene structure and the substrate, separating the three-dimensional graphene structure from the substrate by bonding the three-dimensional graphene structure to an adhesive support, combining the three-dimensional graphene structure with an insulating substrate, and removing the adhesive support.
摘要翻译：三维石墨烯结构，以及制造和转移三维石墨烯结构的方法，包括形成具有周期性重复的三维形状的至少一层石墨烯。三维石墨烯结构通过在基板的表面上形成具有三维形状的图案而形成，并且通过在基板上生长石墨烯来形成具有图案的三维形状的三维石墨烯结构，形成图案。通过在三维石墨烯结构和衬底之间注入气体来转移三维石墨烯结构，通过将三维石墨烯结构粘合到粘合剂支持体上，将三维石墨烯结构与基底分离，具有绝缘基底的三维石墨烯结构，以及去除粘合剂支撑。

2. 发明授权

US08921824B2 3-dimensional graphene structure and process for preparing and transferring the same 有权
标题翻译：三维石墨烯结构及其制备和转移过程
公开(公告)号：US08921824B2
公开(公告)日：2014-12-30
申请号：US13437140
申请日：2012-04-02
申请人： Hyeon-jin Shin , Jae-young Choi , Ji-hoon Park , Joung-real Ahn
发明人： Hyeon-jin Shin , Jae-young Choi , Ji-hoon Park , Joung-real Ahn
IPC分类号： H01L29/06 , H01L21/02 , C01B31/04 , H01L29/16 , B82Y40/00 , B82Y30/00
CPC分类号： H01L21/02587 , B82Y30/00 , B82Y40/00 , C01B32/188 , H01L21/0237 , H01L21/02378 , H01L21/0243 , H01L21/02491 , H01L21/02527 , H01L21/02612 , H01L21/02658 , H01L29/0657 , H01L29/1606
摘要： A three-dimensional graphene structure, and methods of manufacturing and transferring the same including forming at least one layer of graphene having a periodically repeated three-dimensional shape. The three-dimensional graphene structure is formed by forming a pattern having a three-dimensional shape on a surface of a substrate, and forming the three-dimensional graphene structure having the three-dimensional shape of the pattern by growing graphene on the substrate on which the pattern is formed. The three-dimensional graphene structure is transferred by injecting a gas between the three-dimensional graphene structure and the substrate, separating the three-dimensional graphene structure from the substrate by bonding the three-dimensional graphene structure to an adhesive support, combining the three-dimensional graphene structure with an insulating substrate, and removing the adhesive support.
摘要翻译：三维石墨烯结构，以及制造和转移三维石墨烯结构的方法，包括形成具有周期性重复的三维形状的至少一层石墨烯。三维石墨烯结构通过在基板的表面上形成具有三维形状的图案而形成，并且通过在基板上生长石墨烯来形成具有图案的三维形状的三维石墨烯结构，形成图案。通过在三维石墨烯结构和衬底之间注入气体来转移三维石墨烯结构，通过将三维石墨烯结构粘合到粘合剂支持体上，将三维石墨烯结构与基底分离，具有绝缘基底的三维石墨烯结构，以及去除粘合剂支撑。

3. 发明授权

US06952394B1 Method for transmitting and receiving orthogonal frequency division multiplexing signal and apparatus therefor 有权
标题翻译：用于发送和接收正交频分复用信号的方法及其装置
公开(公告)号：US06952394B1
公开(公告)日：2005-10-04
申请号：US09576767
申请日：2000-05-24
申请人： Yung-soo Kim , Ji-hoon Park
发明人： Yung-soo Kim , Ji-hoon Park
IPC分类号： H04J11/00 , H04L1/00 , H04L25/03 , H04L27/26 , H04N5/44 , H04N19/00 , H04N19/436 , H04N19/46 , H04N19/60 , H04N19/70 , H04N19/80
CPC分类号： H04L1/0071 , H04L25/03012 , H04L27/2614 , H04L27/2628 , H04L27/2633
摘要： A method for transmitting orthogonal frequency division multiplexing (OFDM) signals including coding the OFDM signals; forming a block of N coded data and dividing the block into L M-sized small blocks; M-point inverse fast Fourier transforming the L small blocks; combining the transformed blocks to generate an N-sized inversely-transformed block; attaching a cyclic prefix to the N-sized block; and transforming the blocks into an analog signal; and transmitting the analog signal. A method of receiving OFDM signals including digitally converting received OFDM signals and obtaining a samples from the transformed signals; detecting the starting point of an N-sized signal sample block from the samples; dividing the signal sample block into L M-sized small blocks M-point fast Fourier transforming the L small blocks; combining the transformed small blocks to generate an N-sized transform block; detecting data from the generated block, and decoding the detected data. N, M and L are integers of 1 or more and L=N/M.
摘要翻译：一种用于发送正交频分复用（OFDM）信号的方法，包括对所述OFDM信号进行编码; 形成N个编码数据块，并将该块划分成L个M个小块; M点逆快速傅立叶变换L个小块; 组合经变换的块以生成N尺寸的反向变换块; 将循环前缀附加到N尺寸块; 并将块变换为模拟信号; 并发送模拟信号。一种接收OFDM信号的方法，包括数字地转换接收到的OFDM信号并从变换的信号中获取样本; 从样本中检测N个大小的信号样本块的起始点; 将信号采样块分为L M个小块，M点快速傅里叶变换L个小块; 组合变换的小块以产生N尺寸的变换块; 从所生成的块中检测数据，并解码检测到的数据。 N，M和L是1或更大的整数，L = N / M。

4. 发明授权

US5880898A Data reproduction method and circuit for removing a glitch error in a digital magnetic recording/reproduction apparatus 失效
标题翻译：用于消除数字磁记录/再现装置中的毛刺误差的数据再现方法和电路
公开(公告)号：US5880898A
公开(公告)日：1999-03-09
申请号：US613947
申请日：1996-03-13
申请人： Ji-hoon Park
发明人： Ji-hoon Park
IPC分类号： G11B5/09 , G11B20/10 , G11B20/14 , G11B5/035
CPC分类号： G11B20/1403 , G11B20/10009 , G11B5/09
摘要： A data reproduction method and a circuit therefor for use in a digital magnetic recording/reproduction apparatus. The circuit includes a reproduction amplifier, a reproduction equalizer, a data detector, a reproduced clock recovery portion, a data/clock synchronizer, and a glitch error removal portion. The method and apparatus operates to remove a glitch error which may occur when the digital data recorded on the recording medium is recovered. The data from which the glitch error has been removed is synchronized with a reproduced clock. Removal of the glitch error prevents misoperation of the devices which perform subsequent operations, and improves the bit error ratio of the overall reproduction system.
摘要翻译：一种用于数字磁记录/再现装置的数据再现方法及其电路。电路包括再现放大器，再现均衡器，数据检测器，再现时钟恢复部分，数据/时钟同步器和毛刺误差去除部分。该方法和装置用于消除当记录在记录介质上的数字数据被恢复时可能发生的毛刺误差。毛刺错误已被删除的数据与再现的时钟同步。去除毛刺误差防止执行后续操作的装置的误操作，并且提高整个再现系统的误码率。

5. 发明申请

US20070262373A1 Non-volatile memory integrated circuit device and method of fabricating the same 审中-公开
标题翻译：非易失性存储器集成电路器件及其制造方法
公开(公告)号：US20070262373A1
公开(公告)日：2007-11-15
申请号：US11800650
申请日：2007-05-07
申请人： Weon-ho Park , Jeong-uk Han , Yong-tae Kim , Tea-kwang Yu , Kwang-tae Kim , Ji-hoon Park
发明人： Weon-ho Park , Jeong-uk Han , Yong-tae Kim , Tea-kwang Yu , Kwang-tae Kim , Ji-hoon Park
IPC分类号： H01L29/792
CPC分类号： H01L29/7885 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324
摘要： A non-volatile memory integrated circuit device and a method of fabricating the same are disclosed. The non-volatile memory integrated circuit device includes a semiconductor substrate, a tunneling dielectric layer, a memory gate and a select gate, a floating junction region, a bit line junction region and a common source region, and a tunneling-prevention dielectric layer pattern. The tunneling dielectric layer is formed on the semiconductor substrate. The memory gate and a select gate are formed on the tunneling dielectric layer to be spaced apart from each other. The floating junction region is formed within the semiconductor substrate between the memory gate and the select gate, the bit line junction region is formed opposite the floating junction region with respect to the memory gate, and a common source region is formed opposite the floating junction region with respect to the select gate. The tunneling-prevention dielectric layer pattern is interposed between the semiconductor substrate and the tunneling dielectric layer, and is configured to overlap part of the memory gate.
摘要翻译：公开了一种非易失性存储器集成电路器件及其制造方法。非易失性存储器集成电路器件包括半导体衬底，隧道电介质层，存储栅极和选择栅极，浮置结区域，位线结区域和公共源极区域，以及防止隧道的电介质层图案。隧道介电层形成在半导体衬底上。存储器栅极和选择栅极形成在隧道电介质层上以彼此间隔开。在存储栅极和选择栅极之间的半导体衬底内形成浮点结区域，与存储栅极相对地形成位线接合区域，并且与浮置结区域相对形成公共源极区域相对于选择门。防止隧道的电介质层图案介于半导体衬底和隧穿电介质层之间，并被配置为与存储器栅极的一部分重叠。

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