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    • 3. 发明授权
    • MEMS device including a laterally movable portion with piezo-resistive sensing elements and electrostatic actuating elements on trench side walls, and methods for producing the same
    • MEMS器件包括具有压阻感测元件的侧向可移动部分和在沟槽侧壁上的静电致动元件及其制造方法
    • US07550358B2
    • 2009-06-23
    • US11811572
    • 2007-06-11
    • Xinxin LiHeng YangYuelin WangSonglin Feng
    • Xinxin LiHeng YangYuelin WangSonglin Feng
    • H01L21/331
    • B81C1/00547
    • A method to create piezoresistive sensing elements and electrostatic actuator elements on trench sidewalls is disclosed. P-type doped regions are formed in the upper surface of an n-type substrate. A trench is formed in the substrate (e.g. by DRIE process) intersecting with the doped regions and defining a portion of the substrate which is movable in the plane of the substrate relative to the rest of the substrate. Then diffusion of P-type dopant into the trench side-walls creates piezoresistive elements and electrode elements for electrostatic actuation. Owing to the intersection of two doped regions, there are good electrical paths between the electrical elements on the trench side-walls and the previously P-type doped portions on the wafer surface. The trench intersects with insulating elements, so that insulating elements mutually insulate adjacent electrical elements. P-n junctions between the electrical elements and the substrate insulate the electrical elements from the substrate.
    • 公开了一种在沟槽侧壁上形成压阻感测元件和静电致动元件的方法。 在n型衬底的上表面上形成P型掺杂区域。 在衬底中形成沟槽(例如通过DRIE工艺)与掺杂区域交叉并且限定衬底的相对于衬底的其余部分在衬底的平面中可移动的部分。 然后,P型掺杂剂扩散到沟槽侧壁中,形成用于静电驱动的压阻元件和电极元件。 由于两个掺杂区域的交点,沟槽侧壁上的电气元件与晶片表面上先前的P型掺杂部分之间存在良好的电气路径。 沟槽与绝缘元件相交,使得绝缘元件相互绝缘相邻的电气元件。 电气元件和衬底之间的P-n结将电气元件与衬底绝缘。
    • 5. 发明申请
    • MEMS device including a laterally movable portion with piezo-resistive sensing elements and electrostatic actuating elements on trench side walls, and methods for producing the same
    • MEMS器件包括具有压阻感测元件的侧向可移动部分和在沟槽侧壁上的静电致动元件及其制造方法
    • US20070259471A1
    • 2007-11-08
    • US11811572
    • 2007-06-11
    • Xinxin LiHeng YangYuelin WangSonglin Feng
    • Xinxin LiHeng YangYuelin WangSonglin Feng
    • H01L31/062H01L31/113H01L21/00
    • B81C1/00547
    • A method to create piezoresistive sensing elements and electrostatic actuator elements on trench sidewalls is disclosed. P-type doped region(s) 25 are formed in the upper surface of an n-type substrate 20. A trench 22 is formed in the substrate (e.g. by DRIE process) intersecting with the doped regions and defining a portion 21 of the substrate which is movable in the plane of the substrate relative to the rest of the substrate. Then diffusion of P-type dopant into the trench side-walls creates piezoresistive elements 27 and electrode elements 29 for electrostatic actuation. Owing to the intersection of two doped regions, there are good electrical paths between the electrical elements 27, 29 on the trench side-walls and the previously P-typedoped portions 25 on the wafer surface. The trench 22 intersects with insulating elements 28, so that insulating elements 28 mutually insulate adjacent electrical elements 27, 29. P-n junctions between the electrical elements 27, 29 and the substrate 20 insulate the electrical elements 27, 29 from the substrate.
    • 公开了一种在沟槽侧壁上形成压阻感测元件和静电致动元件的方法。 P型掺杂区25形成在n型衬底20的上表面中。 沟槽22形成在衬底中(例如通过DRIE工艺)与掺杂区交叉,并且限定衬底的相对于衬底的其余部分在衬底的平面中可移动的部分21。 然后,P型掺杂剂扩散到沟槽侧壁中,形成用于静电致动的压阻元件27和电极元件29。 由于两个掺杂区域的交点,在沟槽侧壁上的电气元件27,29和晶片表面上的先前的P型化部分25之间存在良好的电路径。 沟槽22与绝缘元件28相交,使得绝缘元件28相互绝缘相邻的电气元件27,29。 电气元件27,29和基板20之间的P-n结将电气元件27,29与基板绝缘。