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    • 1. 发明申请
    • WEB SERVICE GATEWAY FOR IPTV SERVICE AND METHOD OF OPERATING THE SAME
    • 用于IPTV服务的WEB服务网关及其操作方法
    • US20100146570A1
    • 2010-06-10
    • US12562655
    • 2009-09-18
    • Hwa Suk KIMHyun Jin LEEKee Seong CHO
    • Hwa Suk KIMHyun Jin LEEKee Seong CHO
    • H04N7/173
    • H04N7/17336H04N21/25875H04N21/2668H04N21/2747H04N21/47202H04N21/4782H04N21/6125H04N21/64322
    • A Web service gateway for an IPTV service is provided. The Web service gateway for an IPTV service includes: an IPTV request notification processor for transmitting, when IPTV service progress information is transmitted from an IPTV network, IPTV request notification corresponding to the progress information to a content provider server; an IPTV service request processor for controlling, when a request for an IPTV service is transmitted from the content provider server, the IPTV network so that the requested IPTV service is transmitted to an IPTV terminal; an information request processor for receiving, when information related to the IPTV service is requested from the content provider server, information requested from the IPTV network and transmitting the information to the content provider server; and an execution request processor for transmitting, when an execution request related to the IPTV service is transmitted from the content provider server, the execution request to the IPTV network. Therefore, by using a Web-based content provider, various IPTV services can be provided.
    • 提供了用于IPTV服务的Web服务网关。 用于IPTV服务的Web服务网关包括:IPTV请求通知处理器,用于当从IPTV网络发送IPTV服务进度信息时,将与进度信息对应的IPTV请求通知发送到内容提供者服务器; IPTV服务请求处理器,用于当从内容提供商服务器发送对IPTV服务的请求时,控制IPTV网络,使得所请求的IPTV服务被发送到IPTV终端; 当从内容提供商服务器请求与IPTV服务相关的信息时,从IPTV网络请求的信息并将信息发送到内容提供者服务器的信息请求处理器; 以及执行请求处理器,用于当将与IPTV服务相关的执行请求从内容提供者服务器发送到IPTV网络时,执行请求。 因此,通过使用基于Web的内容提供商,可以提供各种IPTV服务。
    • 5. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
    • 半导体器件及其形成方法
    • US20120043605A1
    • 2012-02-23
    • US13210651
    • 2011-08-16
    • Se In KWONHyun Jin LEE
    • Se In KWONHyun Jin LEE
    • H01L29/78
    • H01L27/10876H01L29/4236
    • A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a semiconductor substrate including an active region defined by a device isolation film, a trench formed in the device isolation film and the active region, a gate electrode formed at the bottom of the trench, and a high dielectric material layer formed not only over the top of the gate electrode but also over a surface of the trench. As a result, although the gate electrode does not overlap with the junction region, the semiconductor device prevents channel resistance from being increased, resulting in an increase in semiconductor device characteristics.
    • 公开了半导体器件及其形成方法。 半导体器件包括半导体衬底,其包括由器件隔离膜限定的有源区,在器件隔离膜中形成的沟槽和有源区,形成在沟槽底部的栅电极和不形成沟槽的高介电材料层 仅在栅电极的顶部上,而且在沟槽的表面上方。 结果,尽管栅电极不与结区重叠,但是半导体器件防止沟道电阻增加,导致半导体器件特性的增加。
    • 6. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    • 半导体器件及其制造方法
    • US20120217554A1
    • 2012-08-30
    • US13341304
    • 2011-12-30
    • Hyun Jin LEE
    • Hyun Jin LEE
    • H01L29/772H01L21/336
    • H01L29/66795H01L29/785H01L29/7853
    • A semiconductor device and a method for fabricating the same are provided which can increase the effective channel area and maintain a transistor characteristic. Since the semiconductor device comprises a recess filled with a gate spacer, a gate threshold voltage can be maintained even though the ion-implanting concentration of the active region is not uniform. The semiconductor device comprises: a device isolation film that defines an active region formed over a semiconductor substrate; a line-type recess with a given depth formed to be extended along a first direction to intersect at the active region; and a gate formed to be extended along a second direction to intersect at the active region, wherein a spacer including a high K material is disposed at sidewalls.
    • 提供一种半导体器件及其制造方法,其可以增加有效沟道面积并保持晶体管特性。 由于半导体器件包括填充有栅极间隔物的凹部,所以即使有源区域的离子注入浓度不均匀,也可以维持栅极阈值电压。 半导体器件包括:器件隔离膜,其限定形成在半导体衬底上的有源区; 具有给定深度的线状凹部形成为沿着第一方向延伸以在有源区域相交; 以及形成为沿着第二方向延伸以在有源区域相交的栅极,其中包括高K材料的间隔物设置在侧壁处。