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1. 发明申请

US20090090677A1 Method of treating organic compounds in groundwater 审中-公开
标题翻译：处理地下水中有机化合物的方法
公开(公告)号：US20090090677A1
公开(公告)日：2009-04-09
申请号：US11907008
申请日：2007-10-09
申请人： Hung-Ta Chen , Shih-Lin Huang , Yao-Hui Huang , Juu-En Chang , Min-Shing Tsai
发明人： Hung-Ta Chen , Shih-Lin Huang , Yao-Hui Huang , Juu-En Chang , Min-Shing Tsai
IPC分类号： C02F1/72
CPC分类号： B09C1/00 , B09C1/002
摘要： A method of treating organic compounds in groundwater utilizes permeable catalytic barriers to carry out heterogeneous catalytic oxidation to degrade organic compounds. The permeable catalytic barriers are made of highly permeable catalytic materials, used to contact with the polluted groundwater mixed with oxidant to carry out heterogeneous catalytic oxidation to degrade organic compounds. Ditches are properly excavated to be filled with catalytic materials so as to form the permeable catalytic barriers. And, groundwater monitoring wells and oxidant injection wells are also built at proper locations, so that proper amount of oxidant can be determined and re-treatment can be promptly operated if necessary.
摘要翻译：一种处理地下水中有机化合物的方法利用可渗透的催化屏障进行非均相催化氧化降解有机化合物。可渗透的催化屏障由高度可渗透的催化材料制成，用于与与氧化剂混合的污染地下水接触，进行非均相催化氧化降解有机化合物。适当挖掘沟渠以填充催化材料，以形成可渗透的催化屏障。而且，地下水监测井和氧化剂注入井也建在适当的位置，以便能够确定适量的氧化剂，并在必要时迅速进行再处理。

2. 发明申请

US20070102748A1 Gate electrode and MOS transistor including gate and method of fabricating the same 审中-公开
标题翻译：包括栅极的栅电极和MOS晶体管及其制造方法
公开(公告)号：US20070102748A1
公开(公告)日：2007-05-10
申请号：US11269582
申请日：2005-11-09
申请人： Uway Tseng , Yao-Hui Huang
发明人： Uway Tseng , Yao-Hui Huang
IPC分类号： H01L21/336 , H01L29/76
CPC分类号： H01L29/4925 , H01L21/28035 , H01L29/518 , H01L29/6659 , H01L29/7833
摘要： A gate electrode. The gate electrode includes a substrate, a gate dielectric layer formed thereon, and a gate conductive layer comprising a stack of polysilicon grains formed on the gate dielectric layer, wherein the average size of the polysilicon grains decreases gradually in a direction away from the substrate. The invention also provides a metal oxide semiconductor (MOS) transistor including the gate and a method of fabricating the MOS transistor.
摘要翻译：栅电极。栅极电极包括基板，形成在其上的栅极电介质层和栅极导电层，栅极导电层包括形成在栅极介电层上的多晶硅晶粒堆叠，其中多晶硅晶粒的平均尺寸在远离衬底的方向上逐渐减小。本发明还提供了包括栅极的金属氧化物半导体（MOS）晶体管和制造MOS晶体管的方法。

3. 发明授权

US6143182A Process for chemically oxidizing wastewater with reduced sludge production 失效
标题翻译：污泥生产减少化学废水的工艺
公开(公告)号：US6143182A
公开(公告)日：2000-11-07
申请号：US106276
申请日：1998-06-29
申请人： Yao-Hui Huang , Gaw-Hao Huang , Shan-Shan Chou , Huey-Song You , Shwu-Huey Perng
发明人： Yao-Hui Huang , Gaw-Hao Huang , Shan-Shan Chou , Huey-Song You , Shwu-Huey Perng
IPC分类号： C02F1/72
CPC分类号： C02F1/722 , C02F2103/28 , C02F2103/30
摘要： A process to purify wastewater by chemical oxidation is disclosed. The purification is carried out in a fluidized bed of a suitable particulate carrier upon which the iron(III) compound produced by Fenton's reaction crystallizes or coats, thereby reducing the sludge content of effluent over 50%. In addition, the fluidized bed improves the COD removal by way of thoroughly mixing the wastewater with adding agents.
摘要翻译：公开了通过化学氧化来净化废水的方法。纯化在合适的颗粒载体的流化床中进行，其中通过芬顿反应生产的铁（III）化合物结晶或涂覆，从而将流出物的污泥含量降低超过50％。此外，流化床通过将废水与添加剂充分混合来改善COD去除。

4. 发明授权

US07446056B2 Method for increasing polysilicon grain size 有权
标题翻译：增加多晶硅粒度的方法
公开(公告)号：US07446056B2
公开(公告)日：2008-11-04
申请号：US11293709
申请日：2005-12-01
申请人： Yao-Hui Huang , Tung-Li Lee , Chih-Hao Lin , Yen-Fei Lin , James Sun , Chen Pu-Fang , David Huang
发明人： Yao-Hui Huang , Tung-Li Lee , Chih-Hao Lin , Yen-Fei Lin , James Sun , Chen Pu-Fang , David Huang
IPC分类号： H01L21/44 , H01L21/31 , H01L21/469
CPC分类号： C23C16/0218 , C23C16/24 , H01L21/28525
摘要： The present invention relates to a method for increasing the grain size of a polysilicon layer, which includes exposing a silicon oxide wafer in a deposition chamber to an amount, effective for the purpose, of nitrogen at a flow rate of at least about 240 standard liters per minute (slm). The instant invention further relates to a method for inhibiting the formation of a polysilicon seed in a furnace, which includes the treatment as noted above. The invention also relates to a method for forming a polysilicon layer, including: forming a silicon oxide layer on a substrate, the silicon oxide layer having a plurality of oxygen molecules therein; exposing the silicon oxide layer to a predetermined amount of nitrogen-containing gas in a furnace, whereby a plurality of nitrogen molecules in the nitrogen-containing gas replaces at least part of the oxygen molecules in the silicon oxide layer; and forming a polysilicon layer on the silicon oxide layer.
摘要翻译：本发明涉及一种用于增加多晶硅层的晶粒尺寸的方法，该方法包括将沉积室中的氧化硅晶片暴露于至少约240标准升的流速下的氮的有效量每分钟（slm）。本发明还涉及一种用于抑制在炉中形成多晶硅种子的方法，其包括如上所述的处理。本发明还涉及一种用于形成多晶硅层的方法，包括：在衬底上形成氧化硅层，所述氧化硅层中具有多个氧分子; 在炉中将氧化硅层暴露于预定量的含氮气体，由此在含氮气体中的多个氮分子取代氧化硅层中的至少一部分氧分子; 以及在所述氧化硅层上形成多晶硅层。

5. 发明申请

US20060134926A1 Method for increasing polysilicon grain size 有权
标题翻译：增加多晶硅粒度的方法
公开(公告)号：US20060134926A1
公开(公告)日：2006-06-22
申请号：US11293709
申请日：2005-12-01
申请人： Yao-Hui Huang , Tung-Li Lee , Chih-Hao Lin , Yen-Fei Lin , James Sun , Chen Pu-Fang , David Huang
发明人： Yao-Hui Huang , Tung-Li Lee , Chih-Hao Lin , Yen-Fei Lin , James Sun , Chen Pu-Fang , David Huang
IPC分类号： H01L21/31
CPC分类号： C23C16/0218 , C23C16/24 , H01L21/28525
摘要： The present invention relates to a method for increasing the grain size of a polysilicon layer, which includes exposing a silicon oxide wafer in a deposition chamber to an amount, effective for the purpose, of nitrogen at a flow rate of at least about 240 standard liters per minute (slm). The instant invention further relates to a method for inhibiting the formation of a polysilicon seed in a furnace, which includes the treatment as noted above. The invention also relates to a method for forming a polysilicon layer, including: forming a silicon oxide layer on a substrate, the silicon oxide layer having a plurality of oxygen molecules therein; exposing the silicon oxide layer to a predetermined amount of nitrogen-containing gas in a furnace, whereby a plurality of nitrogen molecules in the nitrogen-containing gas replaces at least part of the oxygen molecules in the silicon oxide layer; and forming a polysilicon layer on the silicon oxide layer.
摘要翻译：本发明涉及一种用于增加多晶硅层的晶粒尺寸的方法，该方法包括将沉积室中的氧化硅晶片暴露于至少约240标准升的流速下的氮的有效量每分钟（slm）。本发明还涉及一种用于抑制在炉中形成多晶硅种子的方法，其包括如上所述的处理。本发明还涉及一种用于形成多晶硅层的方法，包括：在衬底上形成氧化硅层，所述氧化硅层中具有多个氧分子; 在炉中将氧化硅层暴露于预定量的含氮气体，由此在含氮气体中的多个氮分子取代氧化硅层中的至少一部分氧分子; 以及在所述氧化硅层上形成多晶硅层。

6. 发明申请

US20090237698A1 IMAGE PROCESSING DEVICE AND INITIATING METHOD THEREFOR 审中-公开
标题翻译：图像处理装置及其启动方法
公开(公告)号：US20090237698A1
公开(公告)日：2009-09-24
申请号：US12195162
申请日：2008-08-20
申请人： Yao-Hui Huang
发明人： Yao-Hui Huang
IPC分类号： G06F3/12
CPC分类号： H04N1/00928 , G06F9/4401 , H04N1/00 , H04N2201/0094
摘要： The present invention provides an initiating method for an image processing device. The image processing device includes a memory unit, a storage unit for storing multiple compressed programs therein, and a controller connected to the storage unit and the memory unit. The initiating method includes steps of: (a) selectively reading out at least one compressed program and loading the at least one compressed program into the memory unit; (b) executing a decompression program to decompress the at least one compressed program; and (c) executing the at least one compressed program which has been decompressed.
摘要翻译：本发明提供一种图像处理装置的启动方法。图像处理装置包括存储单元，用于存储多个压缩程序的存储单元和连接到存储单元和存储单元的控制器。启动方法包括以下步骤：（a）选择性地读出至少一个压缩程序并将至少一个压缩程序加载到存储单元中; （b）执行解压缩程序以解压缩所述至少一个压缩程序; 和（c）执行已被解压缩的至少一个压缩程序。

7. 发明授权

US6126838A Method of wastewater treatment by electrolysis and oxidization 失效
标题翻译：通过电解和氧化处理废水的方法
公开(公告)号：US6126838A
公开(公告)日：2000-10-03
申请号：US106275
申请日：1998-06-29
申请人： Yao-Hui Huang , Gaw-Hao Huang , Shen-Nan Lee , Shih-Ming Lin
发明人： Yao-Hui Huang , Gaw-Hao Huang , Shen-Nan Lee , Shih-Ming Lin
IPC分类号： C02F1/461 , C02F1/467 , C02F1/66 , C02F1/72 , C02F9/00 , C02F1/463
CPC分类号： C02F9/00 , C02F1/46114 , C02F1/4672 , C02F1/66 , C02F1/72 , C02F1/722 , C02F2101/203 , C02F2103/28 , C02F2305/026 , Y10S210/912
摘要： Disclosed is a method for treating highly concentrated wastewater by electrolysis and oxidization, said method being characterized in that the electrolysis and oxidization are carried out in a fluidized bed of a suitable particulate carrier. The electrolytic reduction efficiency of ferric ions is improved by the fluidized particulate carrier, and thus a high proportion of iron(III) to iron(II) can be sustained in the system. This invention allows extensive purification of wastewater with improved efficiency.
摘要翻译：公开了一种通过电解和氧化处理高浓度废水的方法，所述方法的特征在于电解和氧化在合适的颗粒载体的流化床中进行。通过流化颗粒载体改善了铁离子的电解还原效率，因此在系统中可以维持高比例的铁（III）至铁（II）。本发明允许以更高的效率大量净化废水。

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