专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08362501B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08362501B2
公开(公告)日：2013-01-29
申请号：US12769744
申请日：2010-04-29
申请人： Hung-Chih Yang , Yu-Jiun Shen , Hsin-Mao Liu
发明人： Hung-Chih Yang , Yu-Jiun Shen , Hsin-Mao Liu
IPC分类号： H01L33/22
CPC分类号： H01L33/40 , H01L2933/0091
摘要： The application illustrates a light-emitting device including a contact layer and a current spreading layer on the contact layer. A part of the contact layer is a rough structure and a part of the contact layer is a flat structure. A part of the current spreading layer is a rough structure and a part of the current spreading layer is a flat structure. The rough region of the contact layer and the rough region of the current spreading layer are substantially overlapped.
摘要翻译：该应用示出了在接触层上包括接触层和电流扩散层的发光器件。接触层的一部分是粗糙结构，并且接触层的一部分是平坦结构。电流扩散层的一部分是粗糙结构，并且电流扩展层的一部分是平坦结构。接触层的粗糙区域和电流扩散层的粗糙区域基本上重叠。

2. 发明申请

US20100276724A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20100276724A1
公开(公告)日：2010-11-04
申请号：US12769744
申请日：2010-04-29
申请人： Hung-Chih YANG , Yu-Jiun Shen , Hsin-Mao Liu
发明人： Hung-Chih YANG , Yu-Jiun Shen , Hsin-Mao Liu
IPC分类号： H01L33/44 , H01L21/3205
CPC分类号： H01L33/40 , H01L2933/0091
摘要： The application illustrates a light-emitting device including a contact layer and a current spreading layer on the contact layer. A part of the contact layer is a rough structure and a part of the contact layer is a flat structure. A part of the current spreading layer is a rough structure and a part of the current spreading layer is a flat structure. The rough region of the contact layer and the rough region of the current spreading layer are substantially overlapped.
摘要翻译：该应用示出了在接触层上包括接触层和电流扩散层的发光器件。接触层的一部分是粗糙结构，接触层的一部分是平坦结构。电流扩散层的一部分是粗糙结构，并且电流扩展层的一部分是平坦结构。接触层的粗糙区域和电流扩散层的粗糙区域基本上重叠。

3. 发明申请

US20110175126A1 LIGHT-EMITTING DIODE STRUCTURE 审中-公开
标题翻译：发光二极管结构
公开(公告)号：US20110175126A1
公开(公告)日：2011-07-21
申请号：US13008702
申请日：2011-01-18
申请人： Hung-Chih YANG , Ming-Chi Hsu , Ta-Cheng Hsu , Chih-Chung Yang , Tsung-Yi Tang , Yung-Sheng Chen , Wen-Yu Shiao , Che-Hao Liao , Yu-Jiun Shen , Sheng-Horng Yen
发明人： Hung-Chih YANG , Ming-Chi Hsu , Ta-Cheng Hsu , Chih-Chung Yang , Tsung-Yi Tang , Yung-Sheng Chen , Wen-Yu Shiao , Che-Hao Liao , Yu-Jiun Shen , Sheng-Horng Yen
IPC分类号： H01L31/0352 , B82Y99/00
CPC分类号： H01L33/12 , B82Y20/00 , B82Y30/00 , H01L33/007 , H01L33/16 , H01L33/20
摘要： A light emitting diode device is provided, which comprises a substrate comprising a first growth surface and a bottom surface opposite to the first growth surface; a dielectric layer with a plurality of openings therein formed on the first growth surface; a plurality of semiconductor nano-scaled structures formed on the substrate protruding through the openings; a layer formed on the plurality of semiconductor nano-scaled structures with a second growth surface substantially parallel with the bottom surface; a light emitting diode structure formed on the second growth surface; wherein the diameters of the openings are smaller than 250 nm, and wherein the diameters of the plurality semiconductor nano-scaled structures are larger than the diameters of the corresponding openings.
摘要翻译：提供了一种发光二极管器件，其包括：衬底，其包括与第一生长表面相对的第一生长表面和底表面; 在第一生长表面上形成有多个开口的电介质层; 形成在所述基板上的多个半导体纳米尺度结构，所述多个半导体纳米级结构通过所述开口突出; 形成在所述多个半导体纳米级结构上的层，其具有基本上平行于所述底表面的第二生长表面; 形成在所述第二生长表面上的发光二极管结构; 其中所述开口的直径小于250nm，并且其中所述多个半导体纳米尺度结构的直径大于相应开口的直径。

4. 发明授权

US08344409B2 Optoelectronic device and method for manufacturing the same 有权
公开(公告)号：US08344409B2
公开(公告)日：2013-01-01
申请号：US13178323
申请日：2011-07-07
申请人： Wei-Chih Peng , Ta-Cheng Hsu , Yu-Jiun Shen , Ching-Fu Tsai
发明人： Wei-Chih Peng , Ta-Cheng Hsu , Yu-Jiun Shen , Ching-Fu Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L31/02327 , H01L31/0547 , H01L33/007 , H01L33/12 , H01L51/5268 , H01L51/5271 , H01L51/5275 , Y02E10/52
摘要： An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.

5. 发明申请

US20080308818A1 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US20080308818A1
公开(公告)日：2008-12-18
申请号：US11808963
申请日：2007-06-14
申请人： Chien-Yuan Wang , Min-Hsun Hsieh , Yu-Jiun Shen
发明人： Chien-Yuan Wang , Min-Hsun Hsieh , Yu-Jiun Shen
IPC分类号： H01L33/00
CPC分类号： C09K11/7734 , H01L33/502 , H05B33/0806
摘要： A light-emitting device includes an LED chip emitting a primary light, and a phosphor deposited on the LED chip for absorbing the primary light to excite a secondary light, wherein the wavelength of the primary light is shorter than 430 nm and the LED chip is driven by current density greater than 200 mA/cm2. The wavelength-converting light-emitting device has a high light efficiency and a stable color temperature, wherein LED chip is diced from a wafer made by means of a phosphor-on-chip process.
摘要翻译：发光装置包括发射初级光的LED芯片和沉积在LED芯片上用于吸收初级光以激发二次光的荧光体，其中初级光的波长短于430nm，LED芯片为由电流密度大于200mA / cm2驱动。波长转换发光装置具有高的光效率和稳定的色温，其中LED芯片由通过片上荧光体制造的晶片切割。

6. 发明申请

US20140103290A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20140103290A1
公开(公告)日：2014-04-17
申请号：US13653140
申请日：2012-10-16
申请人： Sheng-Horng YEN , Ta-Cheng Hsu , Yu-Jiun Shen
发明人： Sheng-Horng YEN , Ta-Cheng Hsu , Yu-Jiun Shen
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L33/32
摘要： A light-emitting device comprises a first semiconductor layer; a second semiconductor layer; a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer; a first electron blocking layer formed between the first semiconductor layer and the light-emitting layer; and a second electron blocking layer formed between the second semiconductor layer and the light-emitting layer, wherein the thickness of the second electron blocking layer is not equal to that of the first electron blocking layer, and/or the band gap energy of the second electron blocking layer is not equal to that of the first electron blocking layer.
摘要翻译：发光器件包括第一半导体层; 第二半导体层; 形成在所述第一半导体层和所述第二半导体层之间的发光层; 形成在第一半导体层和发光层之间的第一电子阻挡层; 以及形成在第二半导体层和发光层之间的第二电子阻挡层，其中第二电子阻挡层的厚度不等于第一电子阻挡层的厚度和/或第二电子阻挡层的带隙能量电子阻挡层不等于第一电子阻挡层的电子阻挡层。

7. 发明申请

US20120104440A1 OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：光电装置及其制造方法
公开(公告)号：US20120104440A1
公开(公告)日：2012-05-03
申请号：US13178323
申请日：2011-07-07
申请人： Wei-Chih PENG , Ta-Cheng Hsu , Yu-Jiun Shen , Ching-Fu Tsai
发明人： Wei-Chih PENG , Ta-Cheng Hsu , Yu-Jiun Shen , Ching-Fu Tsai
IPC分类号： H01L33/60 , H01L33/40
CPC分类号： H01L33/10 , H01L31/02327 , H01L31/0547 , H01L33/007 , H01L33/12 , H01L51/5268 , H01L51/5271 , H01L51/5275 , Y02E10/52
摘要： An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.
摘要翻译：一种光电子器件，包括：衬底和形成在衬底上的第一过渡堆叠，包括形成在衬底上的第一过渡层，其具有形成在第一过渡层内部的中空部件，形成在第一过渡层上的第二过渡层，以及反射器杆形成在第二过渡层内。

8. 发明申请

US20070152207A1 Semiconductor light-emitting device and manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20070152207A1
公开(公告)日：2007-07-05
申请号：US11647170
申请日：2006-12-29
申请人： Shih-Nan Yen , Jung-Tu Chiu , Yu-Jiun Shen , Ching-Fu Tsai
发明人： Shih-Nan Yen , Jung-Tu Chiu , Yu-Jiun Shen , Ching-Fu Tsai
IPC分类号： H01L31/00
CPC分类号： H01L33/06 , H01L33/025
摘要： A semiconductor light-emitting device comprises a substrate; and an active layer formed over the substrate comprising a well layer having an unintentionally-doped impurities; a first barrier layer; and a second barrier layer, wherein the well layer is disposed between the first barrier layer and the second barrier layer, the first barrier layer comprises an n-type-impurities-intentionally-doped portion near to the well layer, and an n-type-impurities-unintentionally-doped portion distant from the well layer; the second barrier layer comprises an n-type-impurities-unintentionally-doped portion near to the well layer.
摘要翻译：半导体发光器件包括衬底; 以及形成在所述衬底上的有源层，包括具有无意掺杂杂质的阱层; 第一阻挡层; 以及第二阻挡层，其中所述阱层设置在所述第一阻挡层和所述第二阻挡层之间，所述第一势垒层包括靠近所述阱层的n型杂质有意掺杂部分，以及n型远离阱层的非有意掺杂部分; 第二阻挡层包括靠近阱层的n型杂质无意掺杂部分。

9. 发明授权

US08664087B2 Method of manufacturing a semiconductor structure and separating the semiconductor from a substrate 有权
标题翻译：制造半导体结构并将半导体与衬底分离的方法
公开(公告)号：US08664087B2
公开(公告)日：2014-03-04
申请号：US13310342
申请日：2011-12-02
申请人： Shih-Pang Chang , Hung-Chi Yang , Yu-Jiun Shen
发明人： Shih-Pang Chang , Hung-Chi Yang , Yu-Jiun Shen
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/02458 , H01L21/0242 , H01L21/02516 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L21/30617 , H01L33/0079
摘要： A method of manufacturing a semiconductor structure is disclosed, which includes providing a substrate comprising a bottom surface and a growth surface opposite to the bottom surface; forming a buffer layer comprising a first surface which is not a C-plane substantially parallel with the bottom surface on the growth surface; forming a semiconductor structure on the buffer layer; forming at least one cavity in the buffer layer; extending the cavity along a main extending direction; separating the substrate and the semiconductor structure; wherein the main extending direction is substantially not parallel with the normal direction of the first surface.
摘要翻译：公开了一种制造半导体结构的方法，其包括提供包括底表面和与底表面相对的生长表面的基底; 形成缓冲层，所述缓冲层包括第一表面，所述第一表面不是与生长表面上的底表面基本平行的C平面; 在缓冲层上形成半导体结构; 在所述缓冲层中形成至少一个空腔; 沿着主延伸方向延伸空腔; 分离衬底和半导体结构; 其中所述主延伸方向基本上不与所述第一表面的法线方向平行。

10. 发明授权

US08232563B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08232563B2
公开(公告)日：2012-07-31
申请号：US11808963
申请日：2007-06-14
申请人： Chien-Yuan Wang , Min-Hsun Hsieh , Yu-Jiun Shen
发明人： Chien-Yuan Wang , Min-Hsun Hsieh , Yu-Jiun Shen
IPC分类号： H01L33/00
CPC分类号： C09K11/7734 , H01L33/502 , H05B33/0806
摘要： A light-emitting device includes an LED chip emitting a primary light, and a phosphor deposited on the LED chip for absorbing the primary light to excite a secondary light, wherein the wavelength of the primary light is shorter than 430 nm and the LED chip is driven by current density greater than 200 mA/cm2. The wavelength-converting light-emitting device has a high light efficiency and a stable color temperature, wherein LED chip is diced from a wafer made by means of a phosphor-on-chip process.
摘要翻译：发光装置包括发射初级光的LED芯片和沉积在LED芯片上用于吸收初级光以激发二次光的荧光体，其中初级光的波长短于430nm，LED芯片为由电流密度大于200mA / cm2驱动。波长转换发光装置具有高的光效率和稳定的色温，其中LED芯片由通过片上荧光体制造的晶片切割。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式