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1. 发明授权

US07710182B2 Reliable level shifter of ultra-high voltage device used in low power application 有权
标题翻译：用于低功率应用的超高压装置的可靠电平移位器
公开(公告)号：US07710182B2
公开(公告)日：2010-05-04
申请号：US12175464
申请日：2008-07-18
申请人： Hung Chang Yu , Fei Xu , Liang Choo Hsia
发明人： Hung Chang Yu , Fei Xu , Liang Choo Hsia
IPC分类号： H03L5/00
CPC分类号： H03K3/356182 , H03K3/012
摘要： The present invention relates to integrated circuits. In particular, it relates to an IC comprising a receiving stage for receiving an input signal, an output stage for generating an output signal having a larger voltage range than the input signal and a level shifter. Embodiments of the invention provide a structure and a method for fabricating the IC wherein the level shifter is incorporated within the IC to improve reliability of the IC.
摘要翻译：集成电路技术领域本发明涉及集成电路。具体地说，本发明涉及一种包括接收输入信号的接收级的IC，用于产生具有比输入信号更大的电压范围的输出信号的输出级和电平转换器。本发明的实施例提供了一种用于制造IC的结构和方法，其中电平移位器被并入IC内以提高IC的可靠性。

2. 发明授权

US06366071B1 Low voltage supply bandgap reference circuit using PTAT and PTVBE current source 有权
标题翻译：低压电源带隙参考电路采用PTAT和PTVBE电流源
公开(公告)号：US06366071B1
公开(公告)日：2002-04-02
申请号：US09902893
申请日：2001-07-12
申请人： Hung Chang Yu
发明人： Hung Chang Yu
IPC分类号： G05F320
CPC分类号： G05F3/30
摘要： A bandgap reference circuit comprising two NMOS transistors, where the first NMOS transistor is driven by a PTAT current source and the second transistor is driven by a PTVBE current source. The PTAT current (IPTAT) and PTVBE current (IPTVBE) are summed in a resistive circuit RX to generate the bandgap or sub-bandgap reference voltage. The IPTAT and IPTVBE currents are generated simultaneously in separate current sources and each of these currents is then used to gate the first and second transistor, respectively. The magnitude of the bandgap or sub-bandgap reference voltage is determined by the ratio of RX and a resistive circuit in the PTVBE current source. By requiring only two transistors, in parallel, coupled to resistive circuit RX the supply voltage required for all circuits is lower than heretofore possible.
摘要翻译：一种带隙参考电路，包括两个NMOS晶体管，其中第一NMOS晶体管由PTAT电流源驱动，第二晶体管由PTVBE电流源驱动。将PTAT电流（IPTAT）和PTVBE电流（IPTVBE）相加在电阻电路RX中以产生带隙或子带隙参考电压。 IPTAT和IPTVBE电流在单独的电流源中同时产生，并且这些电流中的每一个分别用于栅极第一和第二晶体管。带隙或子带隙参考电压的幅度由PTVBE电流源中的RX和电阻电路的比率确定。通过仅需要耦合到电阻电路RX的两个晶体管，所有电路所需的电源电压比以前更低。

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