专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08274069B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08274069B2
公开(公告)日：2012-09-25
申请号：US12333531
申请日：2008-12-12
申请人： Hun Jae Chung , Cheol Soo Sone , Sung Hwan Jang , Rak Jun Choi , Soo Min Lee
发明人： Hun Jae Chung , Cheol Soo Sone , Sung Hwan Jang , Rak Jun Choi , Soo Min Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device. A nitride semiconductor light emitting device according to an aspect of the invention may include: an n-type nitride semiconductor layer provided on a substrate; an active layer provided on the n-type nitride semiconductor layer, and including quantum barrier layers and quantum well layers; and a p-type nitride semiconductor layer provided on the active layer, wherein each of the quantum barrier layers includes a plurality of InxGa(1-x)N layers (0
摘要翻译：提供了一种氮化物半导体发光器件。根据本发明的一个方面的氮化物半导体发光器件可以包括：设置在衬底上的n型氮化物半导体层; 设置在n型氮化物半导体层上的有源层，并且包括量子势垒层和量子阱层; 以及设置在有源层上的p型氮化物半导体层，其中每个量子势垒层包括多个In x Ga（1-x）N层（0

2. 发明申请

US20120068153A1 GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF 有权
标题翻译：第III组氮化物纳米光发光装置及其制造方法
公开(公告)号：US20120068153A1
公开(公告)日：2012-03-22
申请号：US13231415
申请日：2011-09-13
申请人： Han Kyu Seong , Hun Jae Chung , Jung Ja Yang , Cheol Soo Sone
发明人： Han Kyu Seong , Hun Jae Chung , Jung Ja Yang , Cheol Soo Sone
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/32 , H01L33/08 , H01L33/16 , H01L33/24
摘要： A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer.
摘要翻译：一种III族氮化物纳米棒发光器件及其制造方法。该方法包括：准备衬底，形成绝缘膜，该绝缘膜包括一个或多个开口，暴露在衬底上的衬底的部分;通过提供第III族源气体，在通过开口暴露的衬底上生长第一导电III族氮化物纳米棒种子层; 通过向第一导电III族氮化物纳米棒种子层生长第一导电III族氮化物纳米棒，通过以脉冲模式提供第III族源气体和杂质源气体并连续地供给N源气体，形成氮在所述第一导电III族氮化物纳米棒中的每一个的表面上的有源层，以及在所述有源层上形成第二导电氮化物半导体层。

3. 发明申请

US20120061641A1 GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF 有权
标题翻译：第III组氮化物纳米光发光装置及其制造方法
公开(公告)号：US20120061641A1
公开(公告)日：2012-03-15
申请号：US13231454
申请日：2011-09-13
申请人： Han Kyu Seong , Hun Jae Chung , Jung Ja Yang , Cheol Soo Sone
发明人： Han Kyu Seong , Hun Jae Chung , Jung Ja Yang , Cheol Soo Sone
IPC分类号： H01L33/04
CPC分类号： H01L33/04 , H01L27/156 , H01L33/08 , H01L33/16 , H01L33/24 , Y10S977/816
摘要： There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof.
摘要翻译：公开了III族氮化物纳米棒发光器件及其制造方法。 III族氮化物纳米棒发光器件包括：基板，形成在基板上的绝缘膜，并且包括暴露基板的不同直径的部分的多个开口，以及分别形成在第一导电III族氮化物纳米棒所述多个开口，其中所述第一导电III族氮化物纳米棒中的每一个具有有源层和在其表面上顺序地形成的第二导电半导体层。

4. 发明授权

US08735867B2 Group III nitride nanorod light emitting device 有权
标题翻译： III族氮化物纳米棒发光器件
公开(公告)号：US08735867B2
公开(公告)日：2014-05-27
申请号：US13231454
申请日：2011-09-13
申请人： Han Kyu Seong , Hun Jae Chung , Jung Ja Yang , Cheol Soo Sone
发明人： Han Kyu Seong , Hun Jae Chung , Jung Ja Yang , Cheol Soo Sone
IPC分类号： H01L29/06 , H01L31/00 , H01L33/00
CPC分类号： H01L33/04 , H01L27/156 , H01L33/08 , H01L33/16 , H01L33/24 , Y10S977/816
摘要： There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof.
摘要翻译：公开了III族氮化物纳米棒发光器件及其制造方法。 III族氮化物纳米棒发光器件包括：基板，形成在基板上的绝缘膜，并且包括暴露基板的不同直径的部分的多个开口，以及分别形成在第一导电III族氮化物纳米棒所述多个开口，其中所述第一导电III族氮化物纳米棒中的每一个具有有源层和在其表面上顺序地形成的第二导电半导体层。

5. 发明授权

US08455284B2 Group III nitride nanorod light emitting device and method of manufacturing thereof 有权
标题翻译： III族氮化物纳米棒发光器件及其制造方法
公开(公告)号：US08455284B2
公开(公告)日：2013-06-04
申请号：US13231415
申请日：2011-09-13
申请人： Han Kyu Seong , Hun Jae Chung , Jung Ja Yang , Cheol Soo Sone
发明人： Han Kyu Seong , Hun Jae Chung , Jung Ja Yang , Cheol Soo Sone
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/08 , H01L33/16 , H01L33/24
摘要： A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer.
摘要翻译：一种III族氮化物纳米棒发光器件及其制造方法。该方法包括：准备衬底，形成绝缘膜，该绝缘膜包括一个或多个开口，暴露在衬底上的衬底的部分;通过提供第III族源气体，在通过开口暴露的衬底上生长第一导电III族氮化物纳米棒种子层; 通过向第一导电III族氮化物纳米棒种子层生长第一导电III族氮化物纳米棒，通过以脉冲模式提供第III族源气体和杂质源气体并连续地供给N源气体，形成氮在所述第一导电III族氮化物纳米棒中的每一个的表面上的有源层，以及在所述有源层上形成第二导电氮化物半导体层。

6. 发明授权

US07923716B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07923716B2
公开(公告)日：2011-04-12
申请号：US12188698
申请日：2008-08-08
申请人： Soo Min Lee , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
发明人： Soo Min Lee , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
摘要翻译：提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层和第二量子阱层，并且具有能够使载体穿过其的厚度。

7. 发明申请

US20110186815A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20110186815A1
公开(公告)日：2011-08-04
申请号：US13083990
申请日：2011-04-11
申请人： Soo Min LEE , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
发明人： Soo Min LEE , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
IPC分类号： H01L29/15
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
摘要翻译：提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层和第二量子阱层，并且具有能够使载体穿过其的厚度。

8. 发明授权

US08466449B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US08466449B2
公开(公告)日：2013-06-18
申请号：US13083990
申请日：2011-04-11
申请人： Soo Min Lee , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
发明人： Soo Min Lee , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
IPC分类号： H01L31/00 , H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
摘要翻译：提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层和第二量子阱层，并且具有能够使载体穿过其的厚度。

9. 发明申请

US20090146132A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20090146132A1
公开(公告)日：2009-06-11
申请号：US12188698
申请日：2008-08-08
申请人： Soo Min LEE , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
发明人： Soo Min LEE , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
摘要翻译：提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层和第二量子阱层，并且具有能够使载体穿过其的厚度。

10. 发明申请

US20130056747A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20130056747A1
公开(公告)日：2013-03-07
申请号：US13595480
申请日：2012-08-27
申请人： Jin Sub LEE , Jung Sup Kim , Seong Suk Lee , Tae Young Park , Cheol Soo Sone
发明人： Jin Sub LEE , Jung Sup Kim , Seong Suk Lee , Tae Young Park , Cheol Soo Sone
IPC分类号： H01L33/02
CPC分类号： H01L21/02573 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/025 , H01L33/32
摘要： A nitride semiconductor light emitting device and a manufacturing method thereof are provided. The nitride semiconductor light emitting device includes: forming a first conductivity-type nitride semiconductor layer on a substrate; forming an active layer on the first conductivity-type nitride semiconductor layer; and forming a second conductivity-type nitride semiconductor layer on the active layer. High output can be obtained by increasing doping efficiency in growing the conductivity type nitride semiconductor layer.
摘要翻译：提供一种氮化物半导体发光器件及其制造方法。氮化物半导体发光器件包括：在衬底上形成第一导电型氮化物半导体层; 在所述第一导电型氮化物半导体层上形成有源层; 以及在所述有源层上形成第二导电型氮化物半导体层。可以通过增加导电型氮化物半导体层的生长中的掺杂效率来获得高输出。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式