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1. 发明申请

US20120267725A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US20120267725A1
公开(公告)日：2012-10-25
申请号：US13379357
申请日：2011-04-26
申请人： Huilong Zhu , Binneng Wu , Weiping Xiao , Hao Wu , Qingqing Liang
发明人： Huilong Zhu , Binneng Wu , Weiping Xiao , Hao Wu , Qingqing Liang
IPC分类号： H01L29/772 , H01L21/336
CPC分类号： H01L29/66537 , H01L29/1045 , H01L29/105 , H01L29/66545 , H01L29/66553
摘要： Semiconductor structures and methods for manufacturing the same are disclosed. The semiconductor structure comprises: a gate stack formed on a semiconductor substrate; a super-steep retrograde island embedded in said semiconductor substrate and self-aligned with said gate stack; and a counter doped region embedded in said super-steep retrograde island, wherein said counter doped region has a doping type opposite to a doping type of said super-steep retrograde island. The semiconductor structures and the methods for manufacturing the same facilitate alleviating short channel effects.
摘要翻译：公开了半导体结构及其制造方法。半导体结构包括：形成在半导体衬底上的栅叠层; 嵌入在所述半导体衬底中并与所述栅叠层自对准的超陡逆行岛; 以及嵌入在所述超陡逆行岛中的反掺杂区，其中所述反掺杂区具有与所述超陡逆行岛的掺杂类型相反的掺杂类型。半导体结构及其制造方法有助于缓解短沟道效应。

2. 发明授权

US08809955B2 Semiconductor structure and method for manufacturing the same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US08809955B2
公开(公告)日：2014-08-19
申请号：US13379357
申请日：2011-04-26
申请人： Huilong Zhu , Binneng Wu , Weiping Xiao , Hao Wu , Qingqing Liang
发明人： Huilong Zhu , Binneng Wu , Weiping Xiao , Hao Wu , Qingqing Liang
IPC分类号： H01L29/786 , H01L21/8236 , H01L29/10 , H01L29/66
CPC分类号： H01L29/66537 , H01L29/1045 , H01L29/105 , H01L29/66545 , H01L29/66553
摘要： Semiconductor structures and methods for manufacturing the same are disclosed. The semiconductor structure comprises: a gate stack formed on a semiconductor substrate; a super-steep retrograde island embedded in said semiconductor substrate and self-aligned with said gate stack; and a counter doped region embedded in said super-steep retrograde island, wherein said counter doped region has a doping type opposite to a doping type of said super-steep retrograde island. The semiconductor structures and the methods for manufacturing the same facilitate alleviating short channel effects.
摘要翻译：公开了半导体结构及其制造方法。半导体结构包括：形成在半导体衬底上的栅叠层; 嵌入在所述半导体衬底中并与所述栅叠层自对准的超陡逆行岛; 以及嵌入在所述超陡逆行岛中的反掺杂区域，其中所述反掺杂区域具有与所述超陡逆行岛的掺杂类型相反的掺杂类型。半导体结构及其制造方法有助于缓解短沟道效应。

3. 发明申请

US20120319190A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120319190A1
公开(公告)日：2012-12-20
申请号：US13202221
申请日：2011-03-03
申请人： Huilong Zhu , Hao Wu , Weiping Xiao
发明人： Huilong Zhu , Hao Wu , Weiping Xiao
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/785 , H01L21/26586 , H01L29/66803 , H01L29/7843 , H01L29/7848 , H01L29/78612
摘要： Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, the semiconductor device comprises a semiconductor substrate; an insulating layer located on the semiconductor substrate; a semiconductor body located on the insulating layer; a cavity formed in the semiconductor body and into the insulating layer; source/drain regions abutting opposite first side faces of the semiconductor body; gates located on opposite second side faces of the semiconductor body; a channel layer interposed between the respective second side faces and the cavity; and a super-steep-retrograded-well and a halo super-steep-retrograded-well formed in the channel layer. The super-steep-retrograded-well and the halo super-steep-retrograded-well have opposite dopant polarities.
摘要翻译：公开了半导体装置及其制造方法。在一个实施例中，半导体器件包括半导体衬底; 位于所述半导体衬底上的绝缘层; 位于所述绝缘层上的半导体本体; 在半导体本体中形成并进入绝缘层的空腔; 源极/漏极区域邻接半导体本体的相对的第一侧面; 位于半导体本体的相对的第二侧面上的门; 插入在相应的第二侧面和空腔之间的沟道层; 并且在通道层中形成了一个超级陡峭的后退井和一个光晕超陡峭的回归井。超级陡峭后退井和光晕超陡倾斜井具有相反的掺杂极性。

4. 发明授权

US08461650B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08461650B2
公开(公告)日：2013-06-11
申请号：US13202221
申请日：2011-03-03
申请人： Huilong Zhu , Hao Wu , Weiping Xiao
发明人： Huilong Zhu , Hao Wu , Weiping Xiao
IPC分类号： H01L27/12 , H01L21/84 , H01L21/336
CPC分类号： H01L29/785 , H01L21/26586 , H01L29/66803 , H01L29/7843 , H01L29/7848 , H01L29/78612
摘要： Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, the semiconductor device comprises a semiconductor substrate; an insulating layer located on the semiconductor substrate; a semiconductor body located on the insulating layer; a cavity formed in the semiconductor body and into the insulating layer; source/drain regions abutting opposite first side faces of the semiconductor body; gates located on opposite second side faces of the semiconductor body; a channel layer interposed between the respective second side faces and the cavity; and a super-steep-retrograded-well and a halo super-steep-retrograded-well formed in the channel layer. The super-steep-retrograded-well and the halo super-steep-retrograded-well have opposite dopant polarities.
摘要翻译：公开了半导体装置及其制造方法。在一个实施例中，半导体器件包括半导体衬底; 位于所述半导体衬底上的绝缘层; 位于所述绝缘层上的半导体本体; 在半导体本体中形成并进入绝缘层的空腔; 源极/漏极区域邻接半导体本体的相对的第一侧面; 位于半导体本体的相对的第二侧面上的门; 插入在相应的第二侧面和空腔之间的沟道层; 并且在通道层中形成了一个超级陡峭的后退井和一个光晕超陡峭的回归井。超级陡峭后退井和光晕超陡倾斜井具有相反的掺杂极性。

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