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1. 发明申请

US20200091414A1 MAGNETOELECTRIC SPIN ORBIT LOGIC BASED FULL ADDER 审中-公开
公开(公告)号：US20200091414A1
公开(公告)日：2020-03-19
申请号：US16130912
申请日：2018-09-13
申请人： Huichu Liu , Sasikanth Manipatruni , Daniel Morris , Kaushik Vaidyanathan , Tanay Karnik , Ian Young
发明人： Huichu Liu , Sasikanth Manipatruni , Daniel Morris , Kaushik Vaidyanathan , Tanay Karnik , Ian Young
IPC分类号： H01L43/04 , H01L43/06 , H01L43/10 , G11C11/16 , G11C11/18
摘要： An apparatus is provided which comprises a full adder including magnetoelectric material and spin orbit material. In some embodiments, the adder includes: a 3-bit carry generation structure and a multi-bit sum generation structure coupled to the 3-bit carry generation structure. In some embodiments, the 3-bit carry generation structure includes at least three cells comprising magnetoelectric material and spin orbit material, wherein the 3-bit carry generation structure is to perform a minority logic operation on first, second, and third inputs to generate a carry output. In some embodiments, the multi-bit sum generation structure includes at least four cells comprising magnetoelectric material and spin orbit material, wherein the multi-bit sum generation structure is to perform a minority logic operation on the first, second, and third inputs and the carry output to generate a sum output.

2. 发明申请

US20190057050A1 PIPELINE CIRCUIT ARCHITECTURE TO PROVIDE IN-MEMORY COMPUTATION FUNCTIONALITY 审中-公开
公开(公告)号：US20190057050A1
公开(公告)日：2019-02-21
申请号：US16160952
申请日：2018-10-15
申请人： Amrita Mathuriya , Sasikanth Manipatruni , Victor W. Lee , Abhishek Sharma , Huseyin E. Sumbul , Gregory Chen , Raghavan Kumar , Phil Knag , Ram Krishnamurthy , Ian Young
发明人： Amrita Mathuriya , Sasikanth Manipatruni , Victor W. Lee , Abhishek Sharma , Huseyin E. Sumbul , Gregory Chen , Raghavan Kumar , Phil Knag , Ram Krishnamurthy , Ian Young
IPC分类号： G06F13/16 , G06F13/28
摘要： Techniques and mechanisms for performing in-memory computations with circuitry having a pipeline architecture. In an embodiment, various stages of a pipeline each include a respective input interface and a respective output interface, distinct from said input interface, to couple to different respective circuitry. These stages each further include a respective array of memory cells and circuitry to perform operations based on data stored by said array. A result of one such in-memory computation may be communicated from one pipeline stage to a respective next pipeline stage for use in further in-memory computations. Control circuitry, interconnect circuitry, configuration circuitry or other logic of the pipeline precludes operation of the pipeline as a monolithic, general-purpose memory device. In other embodiments, stages of the pipeline each provide a different respective layer of a neural network.

3. 发明申请

US20190057727A1 MEMORY DEVICE TO PROVIDE IN-MEMORY COMPUTATION FUNCTIONALITY FOR A PIPELINE CIRCUIT ARCHITECTURE 审中-公开
公开(公告)号：US20190057727A1
公开(公告)日：2019-02-21
申请号：US16160955
申请日：2018-10-15
申请人： Amrita Mathuriya , Sasikanth Manipatruni , Victor W. Lee , Abhishek Sharma , Huseyin E. Sumbul , Gregory Chen , Raghavan Kumar , Phil Knag , Ram Krishnamurthy , Ian Young
发明人： Amrita Mathuriya , Sasikanth Manipatruni , Victor W. Lee , Abhishek Sharma , Huseyin E. Sumbul , Gregory Chen , Raghavan Kumar , Phil Knag , Ram Krishnamurthy , Ian Young
IPC分类号： G11C7/10 , G11C5/04 , G06F12/06
摘要： Techniques and mechanisms for configuring a memory device to perform a sequence of in-memory computations. In an embodiment, a memory device includes a memory array and circuitry, coupled thereto, to perform data computations based on the data stored at the memory array. Based on instructions received at the memory device, control circuitry is configured to enable an automatic performance of a sequence of operations. In another embodiment, the memory device is coupled in an in-series arrangement of other memory devices to provide a pipeline circuit architecture. The memory devices each function as a respective stage of the pipeline circuit architecture, where the stages each perform respective in-memory computations. Some or all such stages each provide a different respective layer of a neural network.

4. 发明申请

US20140091411A1 Repeated Spin Current Interconnects 有权
标题翻译：重复自旋电流互连
公开(公告)号：US20140091411A1
公开(公告)日：2014-04-03
申请号：US13630499
申请日：2012-09-28
申请人： Sasikanth Manipatruni , Dmitri Nikonov , Ian Young
发明人： Sasikanth Manipatruni , Dmitri Nikonov , Ian Young
IPC分类号： H01L29/82
CPC分类号： H01L43/02 , H01L27/22 , H01L27/222 , H01L43/00 , H01L2924/0002 , H01L2924/00
摘要： One embodiment includes a metal layer including first and second metal portions; a ferromagnetic layer including a first ferromagnetic portion that directly contacts the first metal portion and a second ferromagnetic portion that directly contacts the second metal portion; and a first metal non-magnetic interconnect coupling the first ferromagnetic portion to the second ferromagnetic portion. The spin interconnect conveys spin polarized current suitable for spin logic circuits. The interconnect may be included in a current repeater such as an inverter or buffer. The interconnect may perform regeneration of spin signals. Some embodiments extend spin interconnects into three dimensions (e.g., vertically across layers of a device) using vertical non-magnetic metal interconnects. Spin interconnects that can communicate spin current without repeated conversion of the current between spin and electrical signals enable spin logic circuits by reducing power requirements, reducing circuit size, and increasing circuit speed.
摘要翻译：一个实施例包括包括第一和第二金属部分的金属层; 包括直接接触第一金属部分的第一铁磁部分和直接接触第二金属部分的第二铁磁部分的铁磁层; 以及将第一铁磁部分耦合到第二铁磁部分的第一金属非磁性互连。自旋互连传送适用于自旋逻辑电路的自旋极化电流。互连可以包括在诸如逆变器或缓冲器的当前中继器中。互连可以执行自旋信号的再生。一些实施例使用垂直非磁性金属互连将自旋互连扩展成三维（例如，垂直跨设备的层）。无需重复转换自旋和电信号之间的电流的自旋电流的自旋互连可以通过降低功耗要求，降低电路尺寸和提高电路速度来实现自旋逻辑电路。

5. 发明申请

US20200227474A1 SPIN ORBIT TORQUE MEMORY DEVICES AND METHODS OF FABRICATION 审中-公开
公开(公告)号：US20200227474A1
公开(公告)日：2020-07-16
申请号：US16246360
申请日：2019-01-11
申请人： Kevin O'Brien , Christopher Wiegand , Tofizur Rahman , Noriyuki Sato , Gary Allen , James Pellegren , Angeline Smith , Tanay Gosavi , Sasikanth Manipatruni , Kaan Oguz , Benjamin Buford , Ian Young
发明人： Kevin O'Brien , Christopher Wiegand , Tofizur Rahman , Noriyuki Sato , Gary Allen , James Pellegren , Angeline Smith , Tanay Gosavi , Sasikanth Manipatruni , Kaan Oguz , Benjamin Buford , Ian Young
IPC分类号： H01L27/22 , H01L43/14 , H01L43/10 , H01L43/08 , H01L43/04
摘要： A perpendicular spin orbit memory device includes a first electrode having a magnetic material and platinum and a material layer stack on a portion of the first electrode. The material layer stack includes a free magnet, a fixed magnet above the first electrode, a tunnel barrier between the free magnet and the fixed magnet and a second electrode coupled with the fixed magnet.

6. 发明申请

US20140001524A1 Spin Hall Effect Memory 有权
标题翻译：旋转霍尔效应记忆
公开(公告)号：US20140001524A1
公开(公告)日：2014-01-02
申请号：US13537541
申请日：2012-06-29
申请人： Sasikanth Manipatruni , Dmitri Nikonov , Ian Young
发明人： Sasikanth Manipatruni , Dmitri Nikonov , Ian Young
IPC分类号： H01L27/22
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L27/222 , H01L27/228 , H01L28/65
摘要： An embodiment of the invention includes a memory cell having a magnet layer coupled to a metal layer and read line. The metal layer is also coupled to write and sense lines. During a write operation charge current is supplied to the metal layer via the write line and induces spin current and a magnetic state within the magnet layer based on the spin Hall effect. During a read operation read current is supplied, via the read line, to the magnet layer and then the metal layer and induces another spin current, within the metal layer, that generates an electric field and voltage, based on inverse spin Hall effect, at a sense node coupled to the sense line. The voltage polarity is based on the aforementioned magnetic state. The memory operates with a low supply voltage to drive charge, read, and spin currents. Other embodiments are described herein.
摘要翻译：本发明的实施例包括具有耦合到金属层和读取线的磁体层的存储单元。金属层也耦合到写入和感测线。在写入操作期间，通过写入线将充电电流提供给金属层，并且基于旋转霍尔效应引起磁体层内的自旋电流和磁状态。在读取操作期间，读取电流通过读取线被提供给磁体层，然后被提供给金属层，并且在金属层内产生基于反旋转霍尔效应产生电场和电压的另一个自旋电流耦合到感测线的感测节点。电压极性基于上述磁状态。存储器以低电源电压运行，以驱动电荷，读数和自旋电流。本文描述了其它实施例。

7. 发明授权

US09281467B2 Spin hall effect memory 有权
标题翻译：旋转厅效果记忆
公开(公告)号：US09281467B2
公开(公告)日：2016-03-08
申请号：US13537541
申请日：2012-06-29
申请人： Sasikanth Manipatruni , Dmitri Nikonov , Ian Young
发明人： Sasikanth Manipatruni , Dmitri Nikonov , Ian Young
IPC分类号： H01L43/08 , H01L49/02 , H01L27/22 , G11C11/18
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L27/222 , H01L27/228 , H01L28/65
摘要： An embodiment of the invention includes a memory cell having a magnet layer coupled to a metal layer and read line. The metal layer is also coupled to write and sense lines. During a write operation charge current is supplied to the metal layer via the write line and induces spin current and a magnetic state within the magnet layer based on the spin Hall effect. During a read operation read current is supplied, via the read line, to the magnet layer and then the metal layer and induces another spin current, within the metal layer, that generates an electric field and voltage, based on inverse spin Hall effect, at a sense node coupled to the sense line. The voltage polarity is based on the aforementioned magnetic state. The memory operates with a low supply voltage to drive charge, read, and spin currents. Other embodiments are described herein.
摘要翻译：本发明的实施例包括具有耦合到金属层和读取线的磁体层的存储单元。金属层也耦合到写入和感测线。在写入操作期间，通过写入线将充电电流提供给金属层，并且基于旋转霍尔效应引起磁体层内的自旋电流和磁状态。在读取操作期间，读取电流通过读取线被提供给磁体层，然后被提供给金属层，并且在金属层内引起另一自旋电流，其基于反旋转霍尔效应产生电场和电压耦合到感测线的感测节点。电压极性基于上述磁状态。存储器以低电源电压运行，以驱动电荷，读数和自旋电流。本文描述了其它实施例。

8. 发明授权

US08294858B2 Integrated photovoltaic cell for display device 有权
标题翻译：用于显示装置的集成光伏电池
公开(公告)号：US08294858B2
公开(公告)日：2012-10-23
申请号：US12415849
申请日：2009-03-31
申请人： Benjie Limketkai , Ming Zhang , Ian Young
发明人： Benjie Limketkai , Ming Zhang , Ian Young
IPC分类号： G02F1/1335 , G02F1/133 , H01L31/042 , H01L31/00
CPC分类号： H01L27/322 , G02B5/201 , G02B5/3025 , H01L27/288 , H01L27/30 , H01L27/3269 , H01M14/005
摘要： Embodiments of the present invention describe a photovoltaic cell integrated into a display device. The photovoltaic cell is designed with an absorption spectrum that does not include a range of wavelengths corresponding to a particular color of visible light. Besides having the capability to harvest light, the photovoltaic cell can also function as a color filter and a photodetector.
摘要翻译：本发明的实施例描述了集成到显示装置中的光伏电池。光伏电池被设计成具有不包括对应于可见光的特定颜色的波长范围的吸收光谱。除了能够收获光之外，光伏电池还可以用作滤色器和光电检测器。

9. 发明申请

US20100300199A1 POSITIVE DISPLACEMENT FLUID FLOW METER 失效
标题翻译：积极位移流体流量计
公开(公告)号：US20100300199A1
公开(公告)日：2010-12-02
申请号：US11990169
申请日：2006-08-10
申请人： Ian Holmes Higgin , Ian Young , Ivor Rogers
发明人： Ian Holmes Higgin , Ian Young , Ivor Rogers
IPC分类号： G01F3/08
CPC分类号： G01F3/08
摘要： A positive displacement fluid flow meter comprises a chamber having a fluid inlet and a fluid outlet. A rotor is displaceable within the chamber, rotation of the rotor being related to the volume of fluid passing through the chamber. The chamber has a surface proximate which an end surface of the rotor passes, the chamber surface and/or the rotor end surface having at least one recess to retain at least a portion of debris carried by the metered fluid. The recess is preferably formed so as not to provide fluid, communication, from the inlet to the outlet across the rotor end surface. A lid closes an end of the chamber which in use is subject to the pressure of fluid within the chamber. The lid is engaged at its periphery to a wall of the chamber, and is preferably flexible adjacent its periphery to reduce the transmission of bending stresses between the periphery of the lid and the remainder thereof.
摘要翻译：正排量流体流量计包括具有流体入口和流体出口的室。转子可在腔室内移动，转子的旋转与通过腔室的流体体积相关。腔室具有靠近转子的端表面的表面，腔室表面和/或转子端表面具有至少一个凹部以保持由计量流体携带的碎屑的至少一部分。凹部优选地形成为不使流体从转子端表面的入口到出口提供流体。盖子封闭了腔室的一端，在使用过程中受到室内流体的压力的影响。盖子在其周边处接合到室的壁上，并且优选地邻近其周边是柔性的，以减小盖的周边与其余部分之间的弯曲应力的传递。

10. 发明授权

US07508858B2 Detuned duo-cavity laser-modulator device and method with detuning selected to minimize change in reflectivity 有权
标题翻译：选择失谐二腔激光调制器装置和失谐方法以最小化反射率变化
公开(公告)号：US07508858B2
公开(公告)日：2009-03-24
申请号：US11742049
申请日：2007-04-30
申请人： Serge Oktyabrsky , Vadim Tokranov , Michael Yakimov , Jobert VanEisden , Edris M. Mohammed , Ian Young
发明人： Serge Oktyabrsky , Vadim Tokranov , Michael Yakimov , Jobert VanEisden , Edris M. Mohammed , Ian Young
IPC分类号： H01S3/08
CPC分类号： H01S5/18302 , H01S5/0425 , H01S5/06226 , H01S5/1021 , H01S5/1039 , H01S5/18311 , H01S5/18352 , H01S5/18358 , H01S5/3095 , H01S2301/176
摘要： A detuned duo-cavity laser-modulator device and method are provided which include lower, middle and upper reflectors, a gain region and an absorber region integrated into a semiconductor die. The middle reflector is disposed between the lower and upper reflectors. Together, the lower and middle reflectors define a first resonant cavity, while the upper and middle reflectors define a second resonant cavity. A gain region is disposed within a laser cavity of the resonant cavities to generate an optical carrier wave, while an absorber region is disposed within a modulator cavity of the resonant cavities to modulate a signal on the optical carrier wave. The laser and modulator cavities are detuned resonant cavities, with the detuning of the laser and modulator cavities being selected to minimized change in reflection from the modulator cavity to the laser cavity when the absorber region modulates the signal on the optical carrier wave.
摘要翻译：提供了一种失谐的二腔激光调制装置和方法，其包括下反射器，中上反射器和上反射器，集成到半导体管芯中的增益区域和吸收器区域。中间反射器设置在下反射器和上反射器之间。一起，下反射器和中间反射器限定第一谐振腔，而上反射器和中反射器限定第二谐振腔。增益区域设置在谐振腔的激光腔内以产生光载波，而吸收体区域设置在谐振腔的调制器腔内，以调制光载波上的信号。激光器和调制器腔是失谐的谐振腔，当吸收器区域调制光载波上的信号时，激光器和调制器腔的失谐被选择为使得从调制器腔到激光腔的反射最小化。

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