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    • 4. 发明授权
    • Nuclear magnetic resonance tomography apparatus having a resonant
circuit for generating gradient fields
    • 具有产生梯级场的谐振电路的核磁共振成像装置
    • US5245287A
    • 1993-09-14
    • US924976
    • 1992-08-05
    • Stefan NowakFranz Schmitt
    • Stefan NowakFranz Schmitt
    • G01R33/385
    • G01R33/385
    • A nuclear magnetic resonance tomography apparatus has at least one gradient coil interconnected with a capacitor to form a resonant circuit. Before the beginning of each read-out sequence, the capacitor is charged to a higher voltage than would be necessary to produce a pure sine oscillation during the read-out sequence. The rise time of the gradient pulse thus produced is less than one-fourth of the duration of the sinusoidal oscillation before the zero-axis crossing, and the decay time is less than one-fourth of the duration of the sinusoidal oscillation after the zero-axis crossing. Additionally, a constant part of each gradient pulse is non-resonantly generated by a gradient amplifier. Only the steep parts of the oscillation of the resonant circuit are used for the rising and trailing edges, whereas the flattened part of the sine oscillation is cut off. The rising and trailing edges can thus be noticeably shortened, so that a greater range for the constant gradient value, which can be equidistantly sampled in the k-space is available for the signal evaluation.
    • 核磁共振断层摄影装置具有与电容器互连以形成谐振电路的至少一个梯度线圈。 在每个读出序列开始之前,电容器被充电到比在读出序列期间产生纯正弦振荡所必需的电压更高的电压。 由此产生的梯度脉冲的上升时间小于零轴交叉之前的正弦振荡的持续时间的四分之一,并且衰减时间小于零点后的正弦振荡的持续时间的四分之一, 轴交叉。 此外,每个梯度脉冲的恒定部分由梯度放大器非谐振地产生。 谐振电路的振荡的陡峭部分用于上升沿和后沿,而正弦振荡的扁平部分被切断。 因此,上升沿和后沿可以明显缩短,使得可以在k空间中等距采样的恒定梯度值的更大范围用于信号评估。
    • 10. 发明申请
    • Transistor module
    • 晶体管模块
    • US20050023673A1
    • 2005-02-03
    • US10895715
    • 2004-07-21
    • Stefan Nowak
    • Stefan Nowak
    • H01L25/07H01L25/18H01L29/00
    • H01L25/18H01L2224/48091H01L2224/4846H01L2224/48472H01L2224/49111H01L2924/30107H01L2924/00014H01L2924/00012H01L2924/00
    • A transistor module formed on a substrate comprises a first transistor, a first recovery diode, a second transistor and a second recovery diode. A first transistor chip associated with the first transistor and a second diode chip associated with the second recovery diode are disposed adjacently on a positive potential area. The first transistor chip and the second diode chip are disposed on an output potential area. A second transistor chip associated with the second transistor and a first diode chip associated with the first recovery diode are adjacently disposed on the output potential area. At least two sides of the output potential area are adjacent to a negative potential area. Both the second transistor chip and the first diode chip are connected to the negative potential area, and one of the first and second transistor chips is disposed opposite one of the first and second diode chips located on a different potential area.
    • 形成在衬底上的晶体管模块包括第一晶体管,第一恢复二极管,第二晶体管和第二恢复二极管。 与第一晶体管相关联的第一晶体管芯片和与第二恢复二极管相关联的第二二极管芯片相邻设置在正电位区域上。 第一晶体管芯片和第二二极管芯片设置在输出电位区域上。 与第二晶体管相关联的第二晶体管芯片和与第一恢复二极管相关联的第一二极管芯片相邻地布置在输出电位区域上。 输出电位区域的至少两侧与负电位区域相邻。 第二晶体管芯片和第一二极管芯片都连接到负电位区域,并且第一和第二晶体管芯片中的一个与位于不同电位区域上的第一和第二二极管芯片中的一个相对置。