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1. 发明授权

US06365328B1 Semiconductor structure and manufacturing method 有权
标题翻译：半导体结构及制造方法
公开(公告)号：US06365328B1
公开(公告)日：2002-04-02
申请号：US09522883
申请日：2000-03-10
申请人： Hua Shen , David Kotecki , Satish Athavale , Jenny Lian , Laertis Economikos , Fen F. Jamin , Gerhard Kunkel , Nirmal Chaudhary
发明人： Hua Shen , David Kotecki , Satish Athavale , Jenny Lian , Laertis Economikos , Fen F. Jamin , Gerhard Kunkel , Nirmal Chaudhary
IPC分类号： G03F700
CPC分类号： H01L21/7687 , H01L21/76885 , H01L27/10852 , H01L28/55 , H01L28/60 , H01L28/75
摘要： A method for forming an electrode. The method includes forming a conductive plug through a first dielectric layer. The plug extends from an upper surface of the first dielectric layer to a contact region in a semiconductor substrate. The electrode is formed photolithographically, misalignment of a mask registration in the photolithography resulting in exposing surface portions of the barrier contact. A second dielectric layer is deposited over the first dielectric layer, over side portions and top portions of the formed electrode, and over the exposed portions of barrier contact. A sacrificial material is provided on portions of the second dielectric layer disposed on lower sides of the, electrode, on portions of the second dielectric layer disposed on the first dielectric layer, and on said exposed portions of the barrier contact while exposing portions of the second dielectric layer on the top portions and upper side portions of the formed electrode. The exposed portions of the second dielectric layer are removed while leaving the portions of the second dielectric layer on the exposed portions of the barrier contact. A material is deposited over exposed portions of the first electrode and over remaining portions of the second dielectric layer in an oxidizing environment. A second electrode is formed for the storage element over the material. In forming a capacitor storage element, the portion of the second dielectric layer on the barrier contact prevents oxidation of the barrier contact during the material formation process.
摘要翻译：一种形成电极的方法。该方法包括通过第一电介质层形成导电插塞。插头从第一电介质层的上表面延伸到半导体衬底中的接触区域。光刻地形成电极，光刻中的掩模配准不对准，导致暴露屏障接触的表面部分。第二电介质层沉积在第一电介质层上，在形成的电极的侧面部分和顶部上方以及屏蔽接触的暴露部分之上。在设置在第一电介质层上的第二电介质层的部分上的第二电介质层的设置在电极的下侧的部分上以及在屏障接触的所述暴露部分上暴露第二电介质层的部分的牺牲材料在形成的电极的顶部和上侧部分上的介电层。第二介电层的暴露部分被去除，同时将第二介电层的部分留在屏障接触的暴露部分上。材料在氧化环境中沉积在第一电极的暴露部分和第二电介质层的剩余部分上。在材料上形成用于存储元件的第二电极。在形成电容器存储元件时，屏障接触部分的第二电介质层在材料形成过程中防止了屏障接触的氧化。

2. 发明申请

US20050196917A1 Method for forming a (111) oriented BSTO thin film layer for high dielectric constant capacitors 审中-公开
标题翻译：用于形成用于高介电常数电容器的（111）取向的BSTO薄膜层的方法
公开(公告)号：US20050196917A1
公开(公告)日：2005-09-08
申请号：US10790786
申请日：2004-03-03
申请人： Jingyu Lian , David Kotecki , Hua Shen , Robert Laibowitz , Katherine Saenger , Chenting Lin , Nicolas Nagel , Yunyu Wang , Satish Athavale , Thomas Shaw
发明人： Jingyu Lian , David Kotecki , Hua Shen , Robert Laibowitz , Katherine Saenger , Chenting Lin , Nicolas Nagel , Yunyu Wang , Satish Athavale , Thomas Shaw
IPC分类号： H01L21/8242
CPC分类号： H01L28/40 , H01L27/10852
摘要： A method for forming high capacitance crystalline dielectric layers with (111) texture is disclosed. In an exemplary embodiment, deposition of a plurality of nuclei is performed at a temperature in the range of about 430 to 460 degrees Celsius, followed by growth of a continuous BSTO dielectric layer at a temperature greater than 600 degrees Celsius. In an exemplary embodiment, a process is disclosed for growing a barium strontium titanium oxide film with high capacitance and thickness of about 30 nm or less.
摘要翻译：公开了一种形成具有（111）结构的高电容结晶介电层的方法。在一个示例性实施例中，多个核的沉积在约430至460摄氏度范围内的温度下进行，随后在大于600摄氏度的温度下生长连续的BSTO介电层。在示例性实施例中，公开了用于生长具有约30nm或更小的高电容和厚度的钡锶氧化钛膜的方法。

3. 发明授权

US06261967B1 Easy to remove hard mask layer for semiconductor device fabrication 有权
标题翻译：易于去除用于半导体器件制造的硬掩模层
公开(公告)号：US06261967B1
公开(公告)日：2001-07-17
申请号：US09501479
申请日：2000-02-09
申请人： Satish D. Athavale , Hua Shen , David Kotecki , Jenny Lian
发明人： Satish D. Athavale , Hua Shen , David Kotecki , Jenny Lian
IPC分类号： H01L21302
CPC分类号： H01L21/32136 , H01L21/0332 , H01L21/31116 , H01L21/32139 , H01L28/55 , H01L28/60
摘要： A method for forming a patterned shape from a noble metal, in accordance with the present invention, includes forming a noble metal layer over a dielectric layer and patterning a hard mask layer on the noble metal layer. The hard mask layer includes a mask material that is selectively removable relative to the noble metal layer and the dielectric layer and capable of withstanding plasma etching. Alternately, the hard mask material may be consumable during the noble metal layer plasma etching. Plasma etching is performed on the noble metal layer in accordance with the patterned hard mask layer. The hard mask layer is removed such that a patterned shape formed in the noble metal layer remains intact after the plasma etching and the hard mask removal.
摘要翻译：根据本发明的用于从贵金属形成图案形状的方法包括在电介质层上形成贵金属层并在贵金属层上图形化硬掩模层。硬掩模层包括可相对于贵金属层和电介质层选择性地移除并能耐受等离子体蚀刻的掩模材料。或者，在贵金属层等离子体蚀刻期间，硬掩模材料可能是可消耗的。根据图案化的硬掩模层在贵金属层上进行等离子体蚀刻。去除硬掩模层，使得在等离子体蚀刻和硬掩模去除之后，在贵金属层中形成的图案形状保持完整。

4. 发明授权

US6165864A Tapered electrode for stacked capacitors 失效
标题翻译：用于堆叠电容器的锥形电极
公开(公告)号：US6165864A
公开(公告)日：2000-12-26
申请号：US123298
申请日：1998-07-28
申请人： Hua Shen , Joachim Nuetzel , Carl J. Radens , David Kotecki
发明人： Hua Shen , Joachim Nuetzel , Carl J. Radens , David Kotecki
IPC分类号： H01G4/12 , H01L21/02 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L21/20
CPC分类号： H01L27/10852 , H01L28/82
摘要： A method for forming a stacked capacitor includes the steps of providing a first insulating layer having a conductive access path therethrough, forming a second insulating layer on the first insulating layer, forming a trench in the second insulating layer, the trench having tapered sidewalls, forming a first electrode in the trench and on the trench sidewalls, the first electrode being electrically coupled to the conductive access path, forming a dielectric layer on the first electrode and forming a second electrode on the dielectric layer. A stacked capacitor having increased surface area includes a first electrode formed in a trench provided in a dielectric material. The first electrode has tapered surfaces forming a conically shaped portion of the first electrode, the first electrode for accessing a capacitively coupled storage node.
摘要翻译：一种叠层电容器的形成方法包括以下步骤：提供具有导电通路的第一绝缘层，在第一绝缘层上形成第二绝缘层，在第二绝缘层中形成沟槽，沟槽具有锥形侧壁，形成所述沟槽中的第一电极和所述沟槽侧壁上的第一电极，所述第一电极电耦合到所述导电接入路径，在所述第一电极上形成电介质层，并在所述电介质层上形成第二电极。具有增加的表面积的堆叠电容器包括形成在设置在电介质材料中的沟槽中的第一电极。第一电极具有形成第一电极的锥形部分的锥形表面，用于访问电容耦合存储节点的第一电极。

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