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    • 9. 发明申请
    • Controlling the Shape of Source/Drain Regions in FinFETs
    • 控制FinFET中源极/漏极区域的形状
    • US20110073952A1
    • 2011-03-31
    • US12831925
    • 2010-07-07
    • Tsz-Mei KwokChien-Chang SuKuan-Yu ChenHsueh-Chang SungHsien-Hsin Lin
    • Tsz-Mei KwokChien-Chang SuKuan-Yu ChenHsueh-Chang SungHsien-Hsin Lin
    • H01L29/78
    • H01L29/7851H01L21/76H01L29/045H01L29/0653H01L29/161H01L29/165H01L29/66795H01L29/7848H01L29/785
    • An integrated circuit structure includes a fin field-effect transistor (FinFET) including a semiconductor fin over and adjacent to insulation regions; and a source/drain region over the insulation regions. The source/drain region includes a first and a second semiconductor region. The first semiconductor region includes silicon and an element selected from the group consisting of germanium and carbon, wherein the element has a first atomic percentage in the first semiconductor region. The first semiconductor region has an up-slant facet and a down-slant facet. The second semiconductor region includes silicon and the element. The element has a second atomic percentage lower than the first atomic percentage. The second semiconductor region has a first portion on the up-slant facet and has a first thickness. A second portion of the second semiconductor region, if any, on the down-slant facet has a second thickness smaller than the first thickness.
    • 集成电路结构包括鳍状物场效应晶体管(FinFET),其包括在绝缘区域上方并邻近绝缘区域的半导体鳍片; 以及绝缘区域上的源极/漏极区域。 源极/漏极区域包括第一和第二半导体区域。 第一半导体区域包括硅和选自锗和碳的元素,其中元素在第一半导体区域中具有第一原子百分比。 第一半导体区域具有上斜面和向下斜面。 第二半导体区域包括硅和元件。 该元素具有比第一原子百分比低的第二原子百分比。 第二半导体区域在上斜面上具有第一部分,并具有第一厚度。 第二半导体区域的第二部分(如果有的话)在下斜面上具有小于第一厚度的第二厚度。