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1. 发明申请

US20120018750A1 SEMICONDUCTOR OPTOELECTRONIC DEVICE AND THE METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体光电装置及其制造方法
公开(公告)号：US20120018750A1
公开(公告)日：2012-01-26
申请号：US13190937
申请日：2011-07-26
申请人： Hsin-Ying WANG , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Hsiang-Ling Chang
发明人： Hsin-Ying WANG , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Hsiang-Ling Chang
IPC分类号： H01L33/22
CPC分类号： H01L31/18 , H01L27/14636 , H01L27/156 , H01L33/005 , H01L33/0079 , H01L33/42
摘要： A semiconductor optoelectronic device comprises an operating substrate; a semiconductor epitaxial stack unit disposed on the operating substrate comprising a first semiconductor material layer having a first electrical conductivity disposed on the operating substrate and a second semiconductor material layer having a second electrical conductivity disposed on the first semiconductor material layer; a transparent conductive layer disposed on the second semiconductor material layer, wherein the transparent conductive layer comprises a first surface, a directly contacting part disposed on the first surface and directly contacting with the second semiconductor material layer, a second surface substantially parallel with the first surface, and a directly contacting corresponding part disposed on the second surface corresponding to the directly contacting part; and a first electrode disposed on the operating substrate and electrically connected with the semiconductor epitaxial stack by the transparent conductive layer, wherein the first electrode is connected with the transparent conductive layer by an area excluding the directly contacting part and the directly contacting corresponding part.
摘要翻译：半导体光电子器件包括操作衬底; 设置在所述操作基板上的半导体外延堆叠单元，其包括设置在所述操作基板上的具有第一导电性的第一半导体材料层和设置在所述第一半导体材料层上的具有第二导电性的第二半导体材料层; 设置在所述第二半导体材料层上的透明导电层，其中所述透明导电层包括第一表面，设置在所述第一表面上并与所述第二半导体材料层直接接触的直接接触部分，所述第二表面基本上平行于所述第一表面以及设置在与直接接触部分相对应的第二表面上的直接接触的对应部件; 以及第一电极，其设置在所述操作基板上并且通过所述透明导电层与所述半导体外延层电连接，其中所述第一电极通过除了直接接触部分和直接接触的对应部分之外的区域与所述透明导电层连接。

2. 发明授权

US09455242B2 Semiconductor optoelectronic device 有权
标题翻译：半导体光电器件
公开(公告)号：US09455242B2
公开(公告)日：2016-09-27
申请号：US13226095
申请日：2011-09-06
申请人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
发明人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
IPC分类号： H01L31/042 , H01L33/00 , H01L25/075 , H01L31/18 , H01L23/00 , H01L33/44 , H01L33/62
CPC分类号： H01L25/0753 , H01L24/24 , H01L24/82 , H01L31/1892 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/01029 , H01L2924/12041 , Y02E10/50 , H01L2924/00
摘要： A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.
摘要翻译：半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠，包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层，以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。

3. 发明申请

US20120055532A1 SEMICONDUCTOR OPTOELECTRONIC DEVICE 有权
标题翻译：半导体光电器件
公开(公告)号：US20120055532A1
公开(公告)日：2012-03-08
申请号：US13226095
申请日：2011-09-06
申请人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
发明人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
IPC分类号： H01L31/0224 , H01L33/08 , H01L33/42
CPC分类号： H01L25/0753 , H01L24/24 , H01L24/82 , H01L31/1892 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/01029 , H01L2924/12041 , Y02E10/50 , H01L2924/00
摘要： A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.
摘要翻译：半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠，包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层，以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。

4. 发明授权

US08809881B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08809881B2
公开(公告)日：2014-08-19
申请号：US13190937
申请日：2011-07-26
申请人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Hsiang-Ling Chang
发明人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Hsiang-Ling Chang
IPC分类号： H01L29/20 , H01L27/15 , H01L27/146 , H01L33/42
CPC分类号： H01L31/18 , H01L27/14636 , H01L27/156 , H01L33/005 , H01L33/0079 , H01L33/42
摘要： A semiconductor optoelectronic device comprises an operating substrate; a semiconductor epitaxial stack unit disposed on the operating substrate comprising a first semiconductor material layer having a first electrical conductivity disposed on the operating substrate and a second semiconductor material layer having a second electrical conductivity disposed on the first semiconductor material layer; a transparent conductive layer disposed on the second semiconductor material layer, wherein the transparent conductive layer comprises a first surface, a directly contacting part disposed on the first surface and directly contacting with the second semiconductor material layer, a second surface substantially parallel with the first surface, and a directly contacting corresponding part disposed on the second surface corresponding to the directly contacting part; and a first electrode disposed on the operating substrate and electrically connected with the semiconductor epitaxial stack by the transparent conductive layer, wherein the first electrode is connected with the transparent conductive layer by an area excluding the directly contacting part and the directly contacting corresponding part.
摘要翻译：半导体光电子器件包括操作衬底; 设置在所述操作基板上的半导体外延堆叠单元，包括设置在所述操作基板上的具有第一导电性的第一半导体材料层和设置在所述第一半导体材料层上的具有第二导电性的第二半导体材料层; 设置在所述第二半导体材料层上的透明导电层，其中所述透明导电层包括第一表面，设置在所述第一表面上并与所述第二半导体材料层直接接触的直接接触部分，所述第二表面基本上平行于所述第一表面以及设置在与直接接触部分相对应的第二表面上的直接接触的对应部件; 以及第一电极，其设置在所述操作基板上并且通过所述透明导电层与所述半导体外延层电连接，其中所述第一电极通过除了直接接触部分和直接接触的对应部分之外的区域与所述透明导电层连接。

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