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    • 5. 发明授权
    • Method and device for passivation of the resonator end faces of semiconductor lasers based on III-V semiconductor material
    • 用于钝化基于III-V半导体材料的半导体激光器谐振器端面的方法和装置
    • US07033852B2
    • 2006-04-25
    • US10381810
    • 2001-09-25
    • Karl HäuslerNils Kirstaedter
    • Karl HäuslerNils Kirstaedter
    • H01L21/00H01S5/00
    • H01S5/0281H01S5/0202H01S5/0282H01S5/0425
    • A method and device for passivating the resonator end faces, in particular the cleaved edges of semiconductor laser diodes, by high-temperature epitaxy of the quaternary compound semiconductor InxGa1-xAsyP1-y, where (0≦x≦1 and 0≦y≦1). To passivate the InxGa1-xAsyP1-y, an additional passivation layer may be applied in situ. The semiconductor crystal is brought to the temperature required for the epitaxy by being heated. To avoid thermal destruction of the contact metal during the epitaxy, the metal is only deposited after the cleaving operation and the passivation. The deposition of the metal on the passivated laser bar is carried out by means of special equipment that allows deposition of metal on the entire surface of the laser and at the same time prevents vapour deposition on the cleaved edges. The method and device can be applied to the production of high-power laser diodes.
    • 通过四元化合物半导体的高温外延钝化谐振器端面,特别是半导体激光二极管的切割边缘的方法和装置。 其中(0 <= x <= 1且0 <= y <= 1)。 为了使钝化层钝化,可以将附加的钝化层(例如, 原位应用 通过加热使半导体晶体达到外延所需的温度。 为了在外延期间避免接触金属的热破坏,金属仅在分裂操作和钝化之后沉积。 金属在钝化激光棒上的沉积是通过特殊的设备进行的,这些设备允许金属沉积在激光的整个表面上,同时防止在切割边缘上的气相沉积。 该方法和装置可应用于大功率激光二极管的生产。