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1. 发明申请

US20110127600A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110127600A1
公开(公告)日：2011-06-02
申请号：US12956578
申请日：2010-11-30
申请人： Honggun KIM , YongSoon CHOI , Ha-Young YI , Eunkee HONG
发明人： Honggun KIM , YongSoon CHOI , Ha-Young YI , Eunkee HONG
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , H01L27/11568 , H01L27/11578
摘要： A semiconductor device and a method of fabricating thereof, including preparing a substrate including a first and second region; forming first and second conductive lines on the first and second region, respectively, the first conductive lines being spaced apart at a first interval and the second conductive lines being spaced apart at a second interval wider than the first interval; forming a dielectric layer in spaces between the first and second conductive lines; etching the dielectric layer until a top surface thereof is lower than top surfaces of the first conductive lines and the second conductive lines; forming a spacer on the etched dielectric layer such that the spacer covers an entire top surface of the etched dielectric layer between the first conductive lines and exposes portions of the etched dielectric layer between the second conductive lines; and removing portions of the etched dielectric layer between the second conductive lines.
摘要翻译：一种半导体器件及其制造方法，包括制备包括第一和第二区域的衬底; 在第一和第二区域分别形成第一和第二导线，第一导线以第一间隔间隔开，第二导线以比第一间隔更宽的第二间隔隔开; 在第一和第二导电线之间的空间中形成电介质层; 蚀刻介电层，直到其顶表面低于第一导电线和第二导线的顶表面; 在所述蚀刻的电介质层上形成间隔物，使得所述间隔物覆盖所述第一导电线之间的所述蚀刻的电介质层的整个顶表面，并且在所述第二导电线之间暴露所述蚀刻的电介质层的部分; 以及去除所述第二导电线之间的蚀刻介电层的部分。

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