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1. 发明申请

US20110303965A1 SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件
公开(公告)号：US20110303965A1
公开(公告)日：2011-12-15
申请号：US13099482
申请日：2011-05-03
申请人： Hong-Soo Kim , Hwa-Kyung Shin , Moo-Kyung Lee , Jong-Ho Lim
发明人： Hong-Soo Kim , Hwa-Kyung Shin , Moo-Kyung Lee , Jong-Ho Lim
IPC分类号： H01L29/788
CPC分类号： H01L29/42324 , H01L21/28273 , H01L27/11526 , H01L27/11546 , H01L29/7881
摘要： A semiconductor device and method of manufacturing a semiconductor device include a plurality of first active regions and a second active region being formed on a substrate. The second active region is formed between two of the first active regions. A plurality of gate structures is formed on respective first active regions. A dummy gate structure is formed on the second active region, and a first voltage is applied to the dummy gate structure.
摘要翻译：半导体器件和半导体器件的制造方法包括在衬底上形成的多个第一有源区和第二有源区。第二有源区形成在两个第一有源区之间。在相应的第一有源区上形成多个栅极结构。在第二有源区上形成虚拟栅极结构，并将第一电压施加到虚拟栅极结构。

2. 发明授权

US08878253B2 Semiconductor devices 有权
标题翻译：半导体器件
公开(公告)号：US08878253B2
公开(公告)日：2014-11-04
申请号：US13099482
申请日：2011-05-03
申请人： Hong-Soo Kim , Hwa-Kyung Shin , Moo-Kyung Lee , Jong-Ho Lim
发明人： Hong-Soo Kim , Hwa-Kyung Shin , Moo-Kyung Lee , Jong-Ho Lim
IPC分类号： H01L27/118 , H01L27/115 , H01L21/28 , H01L29/788 , H01L29/423
CPC分类号： H01L29/42324 , H01L21/28273 , H01L27/11526 , H01L27/11546 , H01L29/7881
摘要： A semiconductor device and method of manufacturing a semiconductor device include a plurality of first active regions and a second active region being formed on a substrate. The second active region is formed between two of the first active regions. A plurality of gate structures is formed on respective first active regions. A dummy gate structure is formed on the second active region, and a first voltage is applied to the dummy gate structure.
摘要翻译：半导体器件和半导体器件的制造方法包括在衬底上形成的多个第一有源区和第二有源区。第二有源区形成在两个第一有源区之间。在相应的第一有源区上形成多个栅极结构。在第二有源区上形成虚拟栅极结构，并将第一电压施加到虚拟栅极结构。

3. 发明授权

US08030698B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08030698B2
公开(公告)日：2011-10-04
申请号：US12437773
申请日：2009-05-08
申请人： Jong-Ho Lim , Choong-Ho Lee , Hye-Jin Cho
发明人： Jong-Ho Lim , Choong-Ho Lee , Hye-Jin Cho
IPC分类号： H01L29/788
CPC分类号： H01L27/11551
摘要： Provided is a nonvolatile memory device having a three dimensional structure. The nonvolatile memory device includes a plurality of stacked semiconductor layers and a plurality of memory cell transistors which is formed on each of a plurality of semiconductor layers and serially connected. Memory cell transistors disposed on different semiconductor layers are serially connected to include one cell string forming a current path in a plurality of semiconductor layers, a first selection transistor serially connected to one edge portion of the cell string and a second selection transistor serially connected to the other edge portion of the cell string.
摘要翻译：具有三维结构的非易失性存储装置。非易失性存储器件包括多个堆叠的半导体层和形成在多个半导体层中的每一个上并且串联连接的多个存储单元晶体管。配置在不同的半导体层上的存储单元晶体管被串联连接以包括在多个半导体层中形成电流路径的一个单元串，串联连接到单元串的一个边缘部分的第一选择晶体管和串联连接到单元串的第二选择晶体管单元格串的其他边缘部分。

4. 发明授权

US07678902B2 Process for the preparation of 11-(4-[2-(2-hydroxyethoxy)ethyl]-1-piperazinyl)dibenzo[b,f][1,4]thiazepine 失效
标题翻译：制备11-（4- [2-（2-羟基乙氧基）乙基] -1-哌嗪基）二苯并[b，f] [1,4]硫氮杂
公开(公告)号：US07678902B2
公开(公告)日：2010-03-16
申请号：US11571116
申请日：2005-06-17
申请人： Byong-Sung Kwak , Sang-Il Lee , Hee-Jun Hwang , Jong-Ho Lim
发明人： Byong-Sung Kwak , Sang-Il Lee , Hee-Jun Hwang , Jong-Ho Lim
IPC分类号： C07D417/04
CPC分类号： C07D281/16
摘要： Disclosed is a process for the preparation of 11-(4-[2-(2-hydroxyethoxy)ethyl]-1-piperazinyl)-dibenzo[b,f][1,4]thiazepine. In the process, low-priced 2,2′-dithiosalicylic acid as starting material is subjected to bond formation reaction with 1-chloro-2-nitrobenzene in a basic aqueous solution, a nitro group reduction reaction is conducted, cyclization and chlorination reactions are simultaneously carried out in the presence of a equivalent amount of halogenating agent, a reaction with piperazine is continuously conducted without separation, and a reaction with 2-haloethoxyethanol is conducted, thereby it is possible to economically producing Quetiapine, that is, 11-(4-[2-(2-hydroxyethoxy)ethyl]-1-piperazinyl)-dibenzo[b,f][1,4]thiazepine, in an environmentally friendly manner. Particularly, the process is advantageous in that economic efficiency is assured because of use of the low-priced starting material, use of an organic solvent is minimized because a reaction is conducted in an aqueous solution, and it is possible to achieve the environmentally friendly and economical process having high commercial usefulness because the number of reaction steps of the process is reduced and because generation of acidic waste is minimized.
摘要翻译：公开了制备11-（4- [2-（2-羟基乙氧基）乙基] -1-哌嗪基） - 二苯并[b，f] [1,4]硫杂吖庚因的方法。在此过程中，作为起始原料的低价2,2'-二硫代水杨酸与碱性水溶液中的1-氯-2-硝基苯进行结合形成反应，进行硝基还原反应，环化反应和氯化反应在等量的卤化剂的存在下同时进行，与哌嗪的反应在不分离的情况下连续进行，与2-卤代乙氧基乙醇进行反应，从而可以经济地制备喹硫平，即11-（4 - [2-（2-羟基乙氧基）乙基] -1-哌嗪基） - 二苯并[b，f] [1,4]硫杂吖庚因。特别地，该方法的优点在于，由于使用低价起始材料来确保经济效率，因此在水溶液中进行反应而使有机溶剂的使用最小化，并且可以实现环境友好和经济的方法具有很高的商业用途，因为该方法的反应步骤的数量减少并且由于酸性废物的产生被最小化。

5. 发明申请

US20090194805A1 Non-Volatile Memory Device 审中-公开
标题翻译：非易失性存储器件
公开(公告)号：US20090194805A1
公开(公告)日：2009-08-06
申请号：US12362930
申请日：2009-01-30
申请人： Hee-Soo Kang , Choong-Ho Lee , Jong-Ho Lim
发明人： Hee-Soo Kang , Choong-Ho Lee , Jong-Ho Lim
IPC分类号： H01L29/788
CPC分类号： H01L27/11524 , H01L27/11519 , H01L27/11521 , H01L29/40114 , H01L29/42336 , H01L29/7881
摘要： A non-volatile memory device includes a substrate, an active region, an isolation layer, a tunnel insulation layer, a floating gate, a dielectric layer and a control gate. The active region includes an upper active region having a first width, and a lower active region beneath the upper active region and having a second width substantially larger than the first width. The isolation layer is adjacent to the active region. The tunnel insulation layer is on the upper active region. The floating gate is on the tunnel insulation layer and has a third width substantially larger than the first width. The dielectric layer is on the floating layer. The control gate is on the dielectric layer.
摘要翻译：非易失性存储器件包括衬底，有源区，隔离层，隧道绝缘层，浮栅，电介质层和控制栅。有源区域包括具有第一宽度的上有源区和在上有源区下面的下有源区，并且具有基本上大于第一宽度的第二宽度。隔离层与有源区相邻。隧道绝缘层位于上活性区上。浮动栅极在隧道绝缘层上，并且具有基本上大于第一宽度的第三宽度。介电层位于浮动层上。控制栅极位于电介质层上。

6. 发明授权

US08570269B2 Lamp driving apparatus for liquid crystal display device having high contrast ratio 有权
标题翻译：具有高对比度的液晶显示装置的灯驱动装置
公开(公告)号：US08570269B2
公开(公告)日：2013-10-29
申请号：US12003628
申请日：2007-12-28
申请人： Hyeon-Seung Kim , Jong-Ho Lim
发明人： Hyeon-Seung Kim , Jong-Ho Lim
IPC分类号： G09G3/36
CPC分类号： G09G3/342 , G09G3/2014 , G09G2310/024 , G09G2320/0646 , G09G2320/066
摘要： Disclosed is a technology for implementing a high contrast ratio that cannot be implemented by only an analog dimming or burst dimming method, by selectively turning off lamps on the LCD device, comprising: a control unit outputting control signals and video data for controlling a driving of a gate driving unit and a data driving unit, and brightness control signals; the gate driving unit for supplying scan signals to gate lines on a liquid crystal panel by controlling of the control unit and the data driving unit for supplying a data voltage to data lines; the liquid crystal panel having liquid crystal cells arranged in a matrix type and thin film transistors formed at each intersection between the data lines and the gate lines; a backlight driving unit for controlling an optical amount by controlling a tube current supplied to lamps on a backlight unit and for selectively turning off the lamps when the brightness control signals are inputted; and the backlight unit for implementing a high brightness with respect to a dark area by irradiating a backlight having a brightness corresponding to light from the lamps emitted by the backlight driving unit toward the liquid crystal panel, and turning off some of the lamps.
摘要翻译：公开了通过选择性地关闭LCD装置上的灯来实现不能仅通过模拟调光或脉冲串调光方式实现的高对比度的技术，包括：控制单元，其输出用于控制驱动的控制信号和视频数据门驱动单元和数据驱动单元，以及亮度控制信号; 栅极驱动单元，用于通过控制控制单元和用于向数据线提供数据电压的数据驱动单元向液晶面板上的栅极线提供扫描信号; 具有以矩阵型排列的液晶单元的液晶面板和形成在数据线与栅极线之间的每个交点处的薄膜晶体管; 背光驱动单元，用于通过控制提供给背光单元上的灯的管电流并且当输入亮度控制信号时选择性地关闭灯来控制光量; 以及背光单元，用于通过将具有与由背光驱动单元发射的灯的光相对应的亮度的背光照射到液晶面板，并且关闭一些灯来实现相对于暗区域的高亮度。

7. 发明授权

US07704826B2 Leveling algorithm for semiconductor manufacturing equipment and related apparatus 有权
标题翻译：半导体制造设备及相关设备的调平算法
公开(公告)号：US07704826B2
公开(公告)日：2010-04-27
申请号：US11483497
申请日：2006-07-10
申请人： Jong-Ho Lim
发明人： Jong-Ho Lim
IPC分类号： H01L21/8242
CPC分类号： G03F9/7003 , G03F9/7034
摘要： A method of reading surface levels of a field defined on a substrate using a sensing apparatus having at least one cell array composed of a plurality of cells, in which some of the cells constituting the at least one cell array are selected and designated as available cells. Light is radiated onto a surface of the field. Light reflected to the available cells from the surface is sensed to extract available level signals. The available level signals may be calculated to read the surface level of the field. The surface level of the field are used in a method of controlling the level of an exposure apparatus controlling the substrate mounted on a leveling stage in up, down, right, left, front, back, and rotational directions using the surface level.
摘要翻译：使用具有由多个单元组成的至少一个单元阵列的感测装置读取在基板上限定的场的表面电平的方法，其中构成所述至少一个单元阵列的一些单元被选择并被指定为可用单元。光被辐射到场地的表面上。感测从表面反射到可用单元的光以提取可用电平信号。可以计算可用电平信号以读取场的表面电平。场的表面水平用于控制使用表面水平控制安装在调平台上的基板的曝光装置的水平的方法，所述曝光装置使用上下左右，前，后，后的方向。

8. 发明授权

US06841688B2 Method of preparing optically pure (R)- or (S)- tetrahydrofuranyl ketone 失效
标题翻译：制备光学纯的（R） - 或（S） - 四氢呋喃酮的方法
公开(公告)号：US06841688B2
公开(公告)日：2005-01-11
申请号：US10290734
申请日：2002-11-08
申请人： Hee-Jun Hwang , Jong-Ho Lim
发明人： Hee-Jun Hwang , Jong-Ho Lim
IPC分类号： C07D307/12 , C07D307/02
CPC分类号： C07D307/12
摘要： Disclosed is a method of preparing an optically pure (R)- or (S)-tetrahydrofuranyl ketone. By such a method, (R)- or (S)-2-tetrahydrofuran amide is converted to (R)- or (S)-2-tetrahydrofuran nitrile through dehydration in the presence of a dehydrating agent and an amine base. Then, thus prepared (R)- or (S)-2-tetrahydrofuran nitrile is nucelophilic addition-reacted with a nucleophile, followed by hydrolyzing, thereby produce (R)- or (S)-tetrahydrofuranyl ketone having high optical purity, while minimizing production of other by-products.
摘要翻译：公开了一种制备光学纯的（R） - 或（S） - 四氢呋喃酮的方法。通过这样的方法，在脱水剂和胺基的存在下，通过脱水将（R） - 或（S）-2-四氢呋喃酰胺转化为（R） - 或（S）-2-四氢呋喃腈。然后，将这样制备的（R） - 或（S）-2-四氢呋喃腈与亲核试剂进行亲核加成反应，然后水解，从而制得具有高光学纯度的（R） - 或（S） - 四氢呋喃酮，同时使生产其他副产品。

9. 发明授权

US08284180B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US08284180B2
公开(公告)日：2012-10-09
申请号：US12542194
申请日：2009-08-17
申请人： Jin-Hwan Jeon , Jong-Ho Lim , Byung-Sam Min
发明人： Jin-Hwan Jeon , Jong-Ho Lim , Byung-Sam Min
IPC分类号： G09G5/00
CPC分类号： G02F1/133604 , G02F1/133603 , G02F2001/133612 , G09G3/3406
摘要： The present disclosure relates to a liquid crystal display (LCD) device and, more particularly, to an LCD device capable of driving a light emitting diode (LED) provided to turn on a fluorescent lamp provided as a light source in darkness by using an induced voltage without employing a driving circuit to thus minimize a fabrication cost and power consumption.An LCD device according to the embodiment of the present invention, when the power voltage is applied to the power supply line to drive the fluorescent lamp, the LED is driven by the power voltage and, at the same time, the power voltage is supplied also to the fluorescent lamp. Thus, light emitted from the LED helps early turn on the fluorescent lamp when the fluorescent lamp is driven in darkness.
摘要翻译：本发明涉及一种液晶显示器（LCD）器件，更具体地说，涉及一种能够驱动发光二极管（LED）的LCD器件，该发光二极管（LED）用于通过使用感应器来驱动在黑暗中设置为光源的荧光灯电压而不采用驱动电路从而使制造成本和功耗最小化。根据本发明实施例的LCD装置，当电源电压施加到电源线以驱动荧光灯时，LED由电源电压驱动，并且同时还提供电源电压到荧光灯。因此，当在黑暗中驱动荧光灯时，从LED发出的光有助于提前打开荧光灯。

10. 发明申请

US20090315094A1 Nonvolatile Memory Device 有权
标题翻译：非易失性存储器件
公开(公告)号：US20090315094A1
公开(公告)日：2009-12-24
申请号：US12437773
申请日：2009-05-08
申请人： Jong-Ho Lim , Choong-Ho Lee , Hye-Jin Cho
发明人： Jong-Ho Lim , Choong-Ho Lee , Hye-Jin Cho
IPC分类号： H01L29/788
CPC分类号： H01L27/11551
摘要： Provided is a nonvolatile memory device having a three dimensional structure. The nonvolatile memory device includes a plurality of stacked semiconductor layers and a plurality of memory cell transistors which is formed on each of a plurality of semiconductor layers and serially connected. Memory cell transistors disposed on different semiconductor layers are serially connected to include one cell string forming a current path in a plurality of semiconductor layers, a first selection transistor serially connected to one edge portion of the cell string and a second selection transistor serially connected to the other edge portion of the cell string.
摘要翻译：具有三维结构的非易失性存储装置。非易失性存储器件包括多个堆叠的半导体层和形成在多个半导体层中的每一个上并且串联连接的多个存储单元晶体管。配置在不同的半导体层上的存储单元晶体管被串联连接以包括在多个半导体层中形成电流路径的一个单元串，串联连接到单元串的一个边缘部分的第一选择晶体管和串联连接到单元串的第二选择晶体管单元格串的其他边缘部分。

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