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1. 发明授权

US08097105B2 Extending lifetime of yttrium oxide as a plasma chamber material 有权
标题翻译：延长氧化钇的寿命作为等离子体室材料
公开(公告)号：US08097105B2
公开(公告)日：2012-01-17
申请号：US11652048
申请日：2007-01-11
申请人： Hong Shih , Duane Outka , Shenjian Liu , John Daugherty
发明人： Hong Shih , Duane Outka , Shenjian Liu , John Daugherty
IPC分类号： C03B29/00
CPC分类号： H01J9/24 , H01J37/32467 , H01J37/32495 , Y10T29/4973
摘要： Two methods of extending the lifetime of yttrium oxide as a plasma chamber material are provided. One method comprises making a three-layer component of a plasma processing chamber by co-sintering a dual-layer green body where one layer comprises ceramic particles and a second layer comprises yttria particles. The two layers are in intimate contact during the sintering process. In a preferred embodiment, the three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. Optionally, the disks are pressed together during the sintering process. The resulting three-layer component is very low in porosity. Preferably, the porosity of any of the outer layer of yttria, the intermediate layer of YAG, and the second outer layer of alumina, is less than 3%. The second method comprises sealing an yttria plasma spray coated component by applying a liquid anaerobic sealant with a room temperature viscosity of less than 50 cP to the component by brushing the sealant on all yttria surfaces of the component, wet cleaning the component, curing the wet cleaned component for over 2 hours at a temperature of at least 150° C. in an N2 environment; and, applying a second sealant coat to the cured substrate by repeating the procedure used to apply the first coat.
摘要翻译：提供延长作为等离子体室材料的氧化钇的寿命的两种方法。一种方法包括通过共同烧结双层生坯，制造等离子体处理室的三层组分，其中一层包含陶瓷颗粒，第二层包含氧化钇颗粒。两层在烧结过程中紧密接触。在优选的实施方案中，三层组分包括氧化钇的外层，YAG的中间层和氧化铝的第二外层。可选地，在烧结过程中将盘压在一起。所得到的三层组分的孔隙率非常低。优选地，氧化钇的外层，YAG的中间层和氧化铝的第二外层中的任一个的孔隙率小于3％。第二种方法包括通过将组分的所有氧化钇表面上的密封剂刷刷，将零件的室温粘度低于50cP的液体厌氧密封剂施加到组分上来密封氧化钇等离子喷涂组分，湿清洗组分，固化湿在N2环境中在至少150℃的温度下清洁组分超过2小时; 并且通过重复用于施加第一涂层的程序将第二密封剂涂层施加到固化的基底上。

2. 发明授权

US08585844B2 Extending lifetime of yttrium oxide as a plasma chamber material 有权
标题翻译：延长氧化钇的寿命作为等离子体室材料
公开(公告)号：US08585844B2
公开(公告)日：2013-11-19
申请号：US13324287
申请日：2011-12-13
申请人： Hong Shih , Duane Outka , Shenjian Liu , John Daugherty
发明人： Hong Shih , Duane Outka , Shenjian Liu , John Daugherty
IPC分类号： B32B17/00
CPC分类号： H01J9/24 , H01J37/32467 , H01J37/32495 , Y10T29/4973
摘要： A method of installing a component of a plasma processing chamber by replacing a used component with a component made by forming a dual-layer green body and co-sintering the dual-layer green body so as to form a three-layer component. The three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. The component is installed such that the outer layer of yttria is exposed to the plasma environment when the chamber is in operation.
摘要翻译：通过用通过形成双层生坯制成的部件代替使用的部件并共同烧结双层生坯以形成三层部件来安装等离子体处理室的部件的方法。三层组件包括氧化钇的外层，YAG的中间层和氧化铝的第二外层。安装该部件使得当腔室运行时，氧化钇的外层暴露于等离子体环境中。

3. 发明申请

US20120144640A1 EXTENDING LIFETIME OF YTTRIUM OXIDE AS A PLASMA CHAMBER MATERIAL 有权
标题翻译：氧化铝作为等离子体材料延长生命周期
公开(公告)号：US20120144640A1
公开(公告)日：2012-06-14
申请号：US13324287
申请日：2011-12-13
申请人： Hong Shih , Duane Outka , Shenjian Liu , John Daugherty
发明人： Hong Shih , Duane Outka , Shenjian Liu , John Daugherty
IPC分类号： B23P6/00
CPC分类号： H01J9/24 , H01J37/32467 , H01J37/32495 , Y10T29/4973
摘要： A method of installing a component of a plasma processing chamber by replacing a used component with a component made by forming a dual-layer green body and co-sintering the dual-layer green body so as to form a three-layer component. The three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. The component is installed such that the outer layer of yttria is exposed to the plasma environment when the chamber is in operation.
摘要翻译：通过用通过形成双层生坯制成的部件代替使用的部件并共同烧结双层生坯以形成三层部件来安装等离子体处理室的部件的方法。三层组件包括氧化钇的外层，YAG的中间层和氧化铝的第二外层。安装该部件使得当腔室运行时，氧化钇的外层暴露于等离子体环境中。

4. 发明申请

US20080169588A1 Extending lifetime of yttrium oxide as a plasma chamber material 有权
标题翻译：延长氧化钇的寿命作为等离子体室材料
公开(公告)号：US20080169588A1
公开(公告)日：2008-07-17
申请号：US11652048
申请日：2007-01-11
申请人： Hong Shih , Duane Outka , Shenjian Liu , John Daugherty
发明人： Hong Shih , Duane Outka , Shenjian Liu , John Daugherty
IPC分类号： H05H1/26
CPC分类号： H01J9/24 , H01J37/32467 , H01J37/32495 , Y10T29/4973
摘要： Two methods of extending the lifetime of yttrium oxide as a plasma chamber material are provided. One method comprises making a three-layer component of a plasma processing chamber by co-sintering a dual-layer green body where one layer comprises ceramic particles and a second layer comprises yttria particles. The two layers are in intimate contact during the sintering process. In a preferred embodiment, the three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. Optionally, the disks are pressed together during the sintering process. The resulting three-layer component is very low in porosity. Preferably, the porosity of any of the outer layer of yttria, the intermediate layer of YAG, and the second outer layer of alumina, is less than 3%. The second method comprises sealing an yttria plasma spray coated component by applying a liquid anaerobic sealant with a room temperature viscosity of less than 50 cP to the component by brushing the sealant on all yttria surfaces of the component, wet cleaning the component, curing the wet cleaned component for over 2 hours at a temperature of at least 150° C. in an N2 environment; and, applying a second sealant coat to the cured substrate by repeating the procedure used to apply the first coat.
摘要翻译：提供延长作为等离子体室材料的氧化钇的寿命的两种方法。一种方法包括通过共同烧结双层生坯，制造等离子体处理室的三层组分，其中一层包含陶瓷颗粒，第二层包含氧化钇颗粒。两层在烧结过程中紧密接触。在优选的实施方案中，三层组分包括氧化钇的外层，YAG的中间层和氧化铝的第二外层。可选地，在烧结过程中将盘压在一起。所得到的三层组分的孔隙率非常低。优选地，氧化钇的外层，YAG的中间层和氧化铝的第二外层中的任一个的孔隙率小于3％。第二种方法包括通过将组分的所有氧化钇表面上的密封剂刷刷，将零件的室温粘度低于50cP的液体厌氧密封剂施加到组分上来密封氧化钇等离子喷涂组分，湿清洗组分，固化湿在N2环境中在至少150℃的温度下清洁组分超过2小时; 并且通过重复用于施加第一涂层的程序将第二密封剂涂层施加到固化的基底上。

5. 发明申请

US20110146909A1 METHODS FOR WET CLEANING QUARTZ SURFACES OF COMPONENTS FOR PLASMA PROCESSING CHAMBERS 审中-公开
标题翻译：用于等离子体处理室的组件的清洁清洗表面的方法
公开(公告)号：US20110146909A1
公开(公告)日：2011-06-23
申请号：US13016561
申请日：2011-01-28
申请人： Hong Shih , Tuochuan Huang , Duane Outka , Jack Kuo , Shenjian Liu , Bruno Morel , Anthony Chen
发明人： Hong Shih , Tuochuan Huang , Duane Outka , Jack Kuo , Shenjian Liu , Bruno Morel , Anthony Chen
IPC分类号： C01B33/12 , B08B3/00 , H01L21/3065
CPC分类号： C23C16/4407 , H01J37/32862
摘要： Methods for wet cleaning quartz surfaces of components for plasma processing chambers in which semiconductor substrates are processed, such as etch chambers and resist stripping chambers, include contacting the quartz surface with at least one organic solvent, a basic solution and different acid solutions, so as to remove organic and metallic contaminants from the quartz surface. The quartz surface is preferably contacted with one of the acid solutions at least two times.
摘要翻译：用于湿处理其中处理半导体衬底的等离子体处理室的部件的石英表面的方法，例如蚀刻室和抗蚀剂剥离室，包括使石英表面与至少一种有机溶剂，碱性溶液和不同的酸溶液接触，以便以从石英表面去除有机和金属污染物。石英表面优选与一种酸溶液接触至少两次。

6. 发明申请

US20050274396A1 Methods for wet cleaning quartz surfaces of components for plasma processing chambers 审中-公开
标题翻译：湿法清洗等离子体处理室部件的石英表面的方法
公开(公告)号：US20050274396A1
公开(公告)日：2005-12-15
申请号：US10863360
申请日：2004-06-09
申请人： Hong Shih , Tuochuan Huang , Duane Outka , Jack Kuo , Shenjian Liu , Bruno Morel , Anthony Chen
发明人： Hong Shih , Tuochuan Huang , Duane Outka , Jack Kuo , Shenjian Liu , Bruno Morel , Anthony Chen
IPC分类号： B08B3/12 , C23C16/00 , C23C16/44
CPC分类号： C23C16/4407 , H01J37/32862
摘要： Methods for wet cleaning quartz surfaces of components for plasma processing chambers in which semiconductor substrates are processed, such as etch chambers and resist stripping chambers, include contacting the quartz surface with at least one organic solvent, a basic solution and different acid solutions, so as to remove organic and metallic contaminants from the quartz surface. The quartz surface is preferably contacted with one of the acid solutions at least two times.
摘要翻译：用于湿处理其中处理半导体衬底的等离子体处理室的部件的石英表面的方法，例如蚀刻室和抗蚀剂剥离室，包括使石英表面与至少一种有机溶剂，碱性溶液和不同的酸溶液接触，以便以从石英表面去除有机和金属污染物。石英表面优选与一种酸溶液接触至少两次。

7. 发明申请

US20110281438A1 PULSED BIAS PLASMA PROCESS TO CONTROL MICROLOADING 有权
标题翻译： PULSED BIAS等离子体处理以控制微波
公开(公告)号：US20110281438A1
公开(公告)日：2011-11-17
申请号：US12744588
申请日：2008-11-18
申请人： Wonchul Lee , Qian Fu , Shenjian Liu , Bryan Pu
发明人： Wonchul Lee , Qian Fu , Shenjian Liu , Bryan Pu
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01L21/32136
摘要： A method for etching a conductive layer through a mask with wider and narrower features is provided. A steady state etch gas is flowed. A steady state RF power is provided to form a plasma from the etch gas. A pulsed bias voltage is provided during the steady state etch gas flow, wherein the pulsed bias voltage has a frequency between 1 to 10,000 Hz. Wider and narrower features are etched into the conductive layer using the plasma formed from the etch gas.
摘要翻译：提供了通过具有更宽和更窄特征的掩模蚀刻导电层的方法。稳态蚀刻气体流过。提供稳态RF功率以从蚀刻气体形成等离子体。在稳态蚀刻气流期间提供脉冲偏压，其中脉冲偏压具有1至10,000Hz之间的频率。使用由蚀刻气体形成的等离子体将更宽和更窄的特征蚀刻到导电层中。

8. 发明授权

US07413992B2 Tungsten silicide etch process with reduced etch rate micro-loading 有权
标题翻译：硅化钨蚀刻工艺，降低蚀刻速率微加载
公开(公告)号：US07413992B2
公开(公告)日：2008-08-19
申请号：US11440163
申请日：2006-05-23
申请人： Sok Kiow Tan , Shenjian Liu , Harmeet Singh , Sam Do Lee , Linda Fung-Ming Lee
发明人： Sok Kiow Tan , Shenjian Liu , Harmeet Singh , Sam Do Lee , Linda Fung-Ming Lee
IPC分类号： H01L21/302
CPC分类号： H01L21/28061 , H01L21/32137
摘要： The embodiments provides an improved tungsten silicide etching process with reduced etch rate micro-loading effect. In one embodiment, a method for etching a layer formed on a substrate is provided. The method includes providing a substrate into a plasma processing chamber, the substrate having a metal silicide layer formed thereon and a patterned mask defined over the metal silicide layer. The method also includes supplying an etching gas mixture of a fluorine-containing gas, a chlorine-containing gas, a nitrogen-containing gas, and an oxygen-containing gas to the plasma processing chamber, wherein the ratio of the nitrogen-containing gas to the fluorine-containing gas is between about 5 to about 15. In addition, the method includes generating a plasma in the plasma processing chamber using the supplied etching gas mixture to etch the metal silicide layer in regions not covered by the patterned mask, the patterned mask defining dense regions and isolated regions, wherein the generated plasma is configured to remove the metal silicide layer in the dense regions and the isolated regions at a reduced etch rate micro-loading.
摘要翻译：实施例提供了一种改进的硅化钨蚀刻工艺，具有降低的蚀刻速率微负载效应。在一个实施例中，提供了蚀刻形成在基板上的层的方法。该方法包括将衬底提供到等离子体处理室中，所述衬底具有形成在其上的金属硅化物层和限定在金属硅化物层上的图案化掩模。该方法还包括向等离子体处理室供应含氟气体，含氯气体，含氮气体和含氧气体的蚀刻气体混合物，其中含氮气体与含氟气体在约5至约15之间。此外，该方法包括使用所提供的蚀刻气体混合物在等离子体处理室中产生等离子体，以在未被图案化掩模覆盖的区域中蚀刻金属硅化物层，掩模，其限定致密区域和隔离区域，其中所产生的等离子体被配置为以降低的蚀刻速率微负载去除密集区域和隔离区域中的金属硅化物层。

9. 发明申请

US20110104616A1 LINE WIDTH ROUGHNESS IMPROVEMENT WITH NOBLE GAS PLASMA 有权
标题翻译：线性宽度粗糙度改进与NOBLE气体等离子体
公开(公告)号：US20110104616A1
公开(公告)日：2011-05-05
申请号：US12921753
申请日：2009-02-18
申请人： Shih-Yuan Cheng , Shenjian Liu , Youn Gi Hong , Qian Fu
发明人： Shih-Yuan Cheng , Shenjian Liu , Youn Gi Hong , Qian Fu
IPC分类号： G03F7/20 , C23F1/08
CPC分类号： H01L21/3065 , H01L21/0271 , H01L21/308 , H01L21/3081 , H01L21/31144 , H01L21/67069
摘要： A method for forming a photoresist mask may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a substrate, ionizing the UV producing gas to produce UV rays to irradiate the substrate, and etching features into the substrate through the photoresist mask.
摘要翻译：用于形成光致抗蚀剂掩模的方法可以包括向具有基底的真空室提供紫外线（UV）产生气体，使产生紫外线的气体离子化以产生UV射线以照射基底，并通过光刻胶将特征蚀刻到基底中面具。

10. 发明授权

US07682979B2 Phase change alloy etch 有权
标题翻译：相变合金蚀刻
公开(公告)号：US07682979B2
公开(公告)日：2010-03-23
申请号：US11479303
申请日：2006-06-29
申请人： Qian Fu , Shenjian Liu , Linda Fung-Ming Lee
发明人： Qian Fu , Shenjian Liu , Linda Fung-Ming Lee
IPC分类号： H01L21/3065
CPC分类号： H01J37/3244 , H01J2237/3341 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： A method of forming devices is provided. A phase change layer is provided. The phase change layer is etched by providing an etch gas comprising a bromine containing compound and forming a plasma from the etch gas. The phase change layer is of a material that may be heated by a current and then when cooled, either forms an amorphous material or a crystalline material, depending on how fast the material is cooled. In addition, the amorphous material has a resistance at least several times greater than the crystalline material.
摘要翻译：提供了一种形成装置的方法。提供了相变层。通过提供包含含溴化合物的蚀刻气体并从蚀刻气体形成等离子体来蚀刻相变层。相变层是可以被电流加热然后冷却的材料，根据材料的冷却速度而形成非晶材料或结晶材料。此外，无定形材料具有比结晶材料至少几倍的电阻。

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