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1. 发明授权

US07470952B2 Power IGBT with increased robustness 有权
标题翻译：功率IGBT具有增强的鲁棒性
公开(公告)号：US07470952B2
公开(公告)日：2008-12-30
申请号：US11598243
申请日：2006-11-09
申请人： Holger Ruething , Hans-Joachim Schulze , Manfred Pfaffenlehner
发明人： Holger Ruething , Hans-Joachim Schulze , Manfred Pfaffenlehner
IPC分类号： H01L29/76
CPC分类号： H01L29/7396 , H01L29/0834 , H01L29/0847 , H01L29/0852 , H01L29/32
摘要： A power IGBT includes a semiconductor body having an emitter zone of a first conduction type and a drift zone of a second conduction type proximate to the emitter zone. The IGBT further includes a cell array, each transistor cell of the array having a source zone, a body zone disposed between the source zone and the drift zone, the body zone and source zone short-circuited, and a gate electrode configured to be insulated with respect to the source zone and the body zone. The cell array has a first cell array section with a first cell density and a second cell array section with a second cell density that is lower than the first cell density. The emitter zone has a lower emitter efficiency in a region corresponding to the second cell array section than in a region corresponding to the first cell array section.
摘要翻译：功率IGBT包括具有第一导电类型的发射极区域和接近发射极区域的第二导电类型的漂移区域的半导体本体。 IGBT还包括单元阵列，阵列的每个晶体管单元具有源极区，设置在源极区和漂移区之间的体区，体区和源极区短路，以及被配置为绝缘的栅电极相对于源区和身体区。电池阵列具有具有第一电池密度的第一电池阵列部分和具有低于第一电池密度的第二电池密度的第二电池阵列部分。发射极区在对应于第二单元阵列区的区域中比在与第一单元阵列区对应的区域中的发射极效率更低。

2. 发明申请

US20070120181A1 Power IGBT with increased robustness 有权
标题翻译：功率IGBT具有增强的鲁棒性
公开(公告)号：US20070120181A1
公开(公告)日：2007-05-31
申请号：US11598243
申请日：2006-11-09
申请人： Holger Ruething , Hans-Joachim Schulze , Manfred Pfaffenlehner
发明人： Holger Ruething , Hans-Joachim Schulze , Manfred Pfaffenlehner
IPC分类号： H01L29/76
CPC分类号： H01L29/7396 , H01L29/0834 , H01L29/0847 , H01L29/0852 , H01L29/32
摘要： A power IGBT includes a semiconductor body having an emitter zone of a first conduction type and a drift zone of a second conduction type proximate to the emitter zone. The IGBT further includes a cell array, each transistor cell of the array having a source zone, a body zone disposed between the source zone and the drift zone, the body zone and source zone short-circuited, and a gate electrode configured to be insulated with respect to the source zone and the body zone. The cell array has a first cell array section with a first cell density and a second cell array section with a second cell density that is lower than the first cell density. The emitter zone has a lower emitter efficiency in a region corresponding to the second cell array section than in a region corresponding to the first cell array section.
摘要翻译：功率IGBT包括具有第一导电类型的发射极区域和接近发射极区域的第二导电类型的漂移区域的半导体本体。 IGBT还包括单元阵列，阵列的每个晶体管单元具有源极区，设置在源极区和漂移区之间的体区，体区和源极区短路，以及被配置为绝缘的栅电极相对于源区和身体区。电池阵列具有具有第一电池密度的第一电池阵列部分和具有低于第一电池密度的第二电池密度的第二电池阵列部分。发射极区在对应于第二单元阵列区的区域中比在与第一单元阵列区对应的区域中的发射极效率更低。

3. 发明授权

US08252671B2 Semiconductor device and fabrication method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08252671B2
公开(公告)日：2012-08-28
申请号：US13186470
申请日：2011-07-20
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaeffer , Franz-Josef Niedernostheide
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaeffer , Franz-Josef Niedernostheide
IPC分类号： H01L21/425
CPC分类号： H01L29/861 , H01L21/263 , H01L21/265 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
摘要翻译：一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

4. 发明授权

US08159022B2 Robust semiconductor device with an emitter zone and a field stop zone 有权
标题翻译：坚固的半导体器件，具有发射极区域和场停止区域
公开(公告)号：US08159022B2
公开(公告)日：2012-04-17
申请号：US12241910
申请日：2008-09-30
申请人： Hans-Joachim Schulze , Manfred Pfaffenlehner
发明人： Hans-Joachim Schulze , Manfred Pfaffenlehner
IPC分类号： H01L29/76
CPC分类号： H01L29/7395 , H01L29/0615 , H01L29/0619 , H01L29/0834 , H01L29/1095 , H01L29/41766 , H01L29/66333
摘要： A power semiconductor component is described. One embodiment provides a semiconductor body having an inner zone and an edge zone. A base zone of a first conduction type is provided. The base zone is arranged in the at least one inner zone and the at least one edge zone. An emitter zone of a second conduction type is provided. The emitter zone is arranged adjacent to the base zone in a vertical direction of the semiconductor body. A field stop zone of the first conduction type is provided. The field stop zone is arranged in the base zone and has a first field stop zone section having a first dopant dose in the edge zone and a second field stop zone section having a second dopant dose in the inner zone. The first dopant dose is higher than the second dopant dose.
摘要翻译：描述功率半导体部件。一个实施例提供了具有内部区域和边缘区域的半导体本体。提供第一导电类型的基区。基部区域布置在至少一个内部区域和至少一个边缘区域中。提供了第二导电类型的发射极区。发射极区域在半导体本体的垂直方向上邻近基极区域布置。提供第一导电类型的场停止区。场停止区域布置在基区中并且具有在边缘区域中具有第一掺杂剂剂量的第一场停止区段区段和在内区域具有第二掺杂剂剂量的第二场停止区段区段。第一掺杂剂剂量高于第二掺杂剂剂量。

5. 发明申请

US20070278472A1 Soft Switching Semiconductor Component with High Robustness and Low Switching Losses 有权
标题翻译：具有高稳定性和低开关损耗的软开关半导体元件
公开(公告)号：US20070278472A1
公开(公告)日：2007-12-06
申请号：US11757451
申请日：2007-06-04
申请人： Anton Mauder , Hans-Peter Felsl , Manfred Pfaffenlehner , Hans-Joachim Schulze
发明人： Anton Mauder , Hans-Peter Felsl , Manfred Pfaffenlehner , Hans-Joachim Schulze
IPC分类号： H01L29/06
CPC分类号： H01L29/861 , H01L21/263 , H01L29/063 , H01L29/7395 , H01L29/74
摘要： A semiconductor component includes a semiconductor body and a second semiconductor zone of a first conductivity type that serves as a rear side emitter. The second semiconductor zone is preceded by a plurality of third semiconductor zones of a second conductivity type that is opposite to the first conductivity type. The third semiconductor zones are spaced apart from one another in a lateral direction. In addition, provided within the semiconductor body is a field stop zone spaced apart from the second semiconductor zone, thereby reducing an electric field in the direction toward the second semiconductor zone.
摘要翻译：半导体部件包括半导体主体和用作后侧发射极的第一导电类型的第二半导体区。第二半导体区域之前是与第一导电类型相反的多个第二导电类型的第三半导体区域。第三半导体区域在横向彼此间隔开。此外，设置在半导体本体内的是与第二半导体区间隔开的场阻挡区域，从而减小朝向第二半导体区域的方向的电场。

6. 发明授权

US08003502B2 Semiconductor device and fabrication method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08003502B2
公开(公告)日：2011-08-23
申请号：US12416935
申请日：2009-04-02
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaeffer , Franz-Josef Niedernostheide
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaeffer , Franz-Josef Niedernostheide
IPC分类号： H01L21/425
CPC分类号： H01L29/861 , H01L21/263 , H01L21/265 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
摘要翻译：一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

7. 发明申请

US20090186462A1 Semiconductor device and Fabrication method 有权
标题翻译：半导体器件及制作方法
公开(公告)号：US20090186462A1
公开(公告)日：2009-07-23
申请号：US12416935
申请日：2009-04-02
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaffer , Franz-Josef Niedernostheide
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaffer , Franz-Josef Niedernostheide
IPC分类号： H01L21/31
CPC分类号： H01L29/861 , H01L21/263 , H01L21/265 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
摘要翻译：一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

8. 发明授权

US07514750B2 Semiconductor device and fabrication method suitable therefor 有权
标题翻译：适用于其的半导体器件及其制造方法
公开(公告)号：US07514750B2
公开(公告)日：2009-04-07
申请号：US11241866
申请日：2005-09-30
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schäffer , Franz-Josef Niedernostheide
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schäffer , Franz-Josef Niedernostheide
IPC分类号： H01L23/62
CPC分类号： H01L29/861 , H01L21/263 , H01L21/265 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device according to the invention has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
摘要翻译：根据本发明的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

9. 发明授权

US08367532B2 Semiconductor device and fabrication method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08367532B2
公开(公告)日：2013-02-05
申请号：US13558467
申请日：2012-07-26
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schäffer , Franz-Josef Niedernostheide
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schäffer , Franz-Josef Niedernostheide
IPC分类号： H01L21/265
CPC分类号： H01L29/861 , H01L21/263 , H01L21/265 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
摘要翻译：一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

10. 发明申请

US20110275202A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD 有权
标题翻译：半导体器件和制造方法
公开(公告)号：US20110275202A1
公开(公告)日：2011-11-10
申请号：US13186470
申请日：2011-07-20
申请人： Anton MAUDER , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schäffer , Franz-Josef Niedernostheide
发明人： Anton MAUDER , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schäffer , Franz-Josef Niedernostheide
IPC分类号： H01L21/425
CPC分类号： H01L29/861 , H01L21/263 , H01L21/265 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
摘要翻译：一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

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